KR930020666A - 수직형 집적 반도체 구조체 - Google Patents
수직형 집적 반도체 구조체 Download PDFInfo
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- KR930020666A KR930020666A KR1019930002811A KR930002811A KR930020666A KR 930020666 A KR930020666 A KR 930020666A KR 1019930002811 A KR1019930002811 A KR 1019930002811A KR 930002811 A KR930002811 A KR 930002811A KR 930020666 A KR930020666 A KR 930020666A
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- transistor
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Abstract
트랜지스터는 바이폴라 트랜지스터(10) 또는 MOS 트랜지스터에 따라 형성된다. 각 트랜지스터(10 또는 11)는 기판(12)을 가지고 있다. 바이폴라 트랜지스터(10)는 제어전극(28)하부에 있는 제1전류 전극(26)을 가지며, 제어전극(28)위에 겹쳐있는 제2전류 전극(32)을 가진다. MOS 트랜지스터(11)은 채널 영역(56)하부에 있는 제1전류 전극(54)을 가지며, 채널영역(56)위에 겹쳐있는 엷게 도핑된 소오스 영역(58) 및 진하게 도핑된 소오스 영역(60)을 가진다. 제어전극 전도층(40)은 측면 유전층(48)과 측벽으로 인접해 있으며, 측벽 유전층(48)은 측면으로 채널 영역(56)과 인접해 있다. 전도층(40)은 트랜지스터(11)의 게이트 전극으로서 작용한다. 각각의 트랜지스터(10 및 11)는 수직으로 집적된 bimos 회로에서와 같이 수직으로 집적되어 있다. 트랜지스터(10 및 11)은 격리(64 및 68)에 의하여 전기적으로 절연되어 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제5도는 본 발명에 따른 바이폴라 트랜지스터 및 형성방법을 도시한 도면 단면도이다.
Claims (2)
- 수직형 집적 반도체 구조체에 있어서, 제2전류 전극(58)을 하부에 두고 제1전류 전극(54)을 갖추고 있는 제1트랜지스터(40,54,48)와, 제1트랜지스터(40,54,48)위에 있는 제2트랜지스터 및, 제2전류 전극(32)을 하부에 두고 제1전류 전극(26)을 갖는 제2트랜지스터를 구비하는 수직형 집적 반도체 구조체.
- 제1항에 있어서, 제1트랜지스터 또는 제2트랜지스터중 하나가, 표면을 갖는 기저층(12)장치, 오프닝의 제1부분을 형성하도록 기저층(12)위에 겹쳐져 있고 부분적으로 에칭되어 있는 제1유전층(16), 장치 오프닝의 제1부분에 수평으로 정합된 장치 오프닝의 제2부분을 형성하도록 제1유전층(16)위에 겹쳐 있고 부분적으로 에칭되어 있는 제어전극 전도층(18) 및, 제어전극 전도층(18)의 측벽을 형성하는 장치 오프닝의 제2부분장치 오프닝의 제2부분에 수평으로 정합된 장치 오프닝의 제3부분을 형성하도록 제어 전극 전도층(18)위에 겹쳐 있고 부분적으로 에칭되어 있는 제2유전층(20), 장치 오프닝내에 형성되어 있는 제1전도형의 제1전류 전극(26) 및, 제1유전층(16)에 측면으로 인접되어 있으며, 기저층(12)위에 겹쳐있는 제1전류전극(26), 장치 오프닝내에 형성되어 있는 제2전도형의 제어전극(28), 및 제1전류전극(26)위에 겹쳐 있으며 상기의 제어전극 전도층(18)의 측면 부분에 측면으로 인접해 있고 물리적으로 연결되어 있는 제어전극(28); 및 장치 오프닝내에 형성되어 있고 제어 전극 전도층(18)위에 겹쳐 있는 제1전도형의 제2전류 전극(32)을 더 구비하는 수밀형 집적 반도체 구조체.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/844,037 US5252849A (en) | 1992-03-02 | 1992-03-02 | Transistor useful for further vertical integration and method of formation |
US844,037 | 1992-03-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930020666A true KR930020666A (ko) | 1993-10-20 |
KR100263954B1 KR100263954B1 (ko) | 2000-08-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930002811A KR100263954B1 (ko) | 1992-03-02 | 1993-02-26 | 트렌지스터 장치 및 수직형 집적 구조체 |
Country Status (3)
Country | Link |
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US (2) | US5252849A (ko) |
JP (1) | JP3217179B2 (ko) |
KR (1) | KR100263954B1 (ko) |
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US5057888A (en) * | 1991-01-28 | 1991-10-15 | Micron Technology, Inc. | Double DRAM cell |
US5156987A (en) * | 1991-12-18 | 1992-10-20 | Micron Technology, Inc. | High performance thin film transistor (TFT) by solid phase epitaxial regrowth |
US5208172A (en) * | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
US5252849A (en) * | 1992-03-02 | 1993-10-12 | Motorola, Inc. | Transistor useful for further vertical integration and method of formation |
-
1992
- 1992-03-02 US US07/844,037 patent/US5252849A/en not_active Expired - Fee Related
-
1993
- 1993-02-23 JP JP05792193A patent/JP3217179B2/ja not_active Expired - Fee Related
- 1993-02-26 KR KR1019930002811A patent/KR100263954B1/ko not_active IP Right Cessation
- 1993-05-24 US US08/065,419 patent/US5376562A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0629307A (ja) | 1994-02-04 |
JP3217179B2 (ja) | 2001-10-09 |
US5376562A (en) | 1994-12-27 |
KR100263954B1 (ko) | 2000-08-16 |
US5252849A (en) | 1993-10-12 |
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