KR910010722A - 반도체기억장치 - Google Patents
반도체기억장치 Download PDFInfo
- Publication number
- KR910010722A KR910010722A KR1019900019526A KR900019526A KR910010722A KR 910010722 A KR910010722 A KR 910010722A KR 1019900019526 A KR1019900019526 A KR 1019900019526A KR 900019526 A KR900019526 A KR 900019526A KR 910010722 A KR910010722 A KR 910010722A
- Authority
- KR
- South Korea
- Prior art keywords
- storage node
- trenches
- insulating film
- memory device
- semiconductor memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 2
- 239000003990 capacitor Substances 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 제1도에 나타낸 DRAM의 소자영역의 마스크패턴의 개구부에 대한 트렌치의 마스크패턴의 개구부 및 저장노드접속의 개구부의 위치관계를 나타낸 도면.
Claims (1)
1도전형의 기판표면(101)에 형성된 소자분리영역으로 둘러싸인 소자영역(1511,1512…)내에 형성된 MOSFET와, 이 MOSFET의 채널폭방향으로 옮겨져 형성된 트렌치(1051,1052…), 이 트렌치(1051,1052…)의 내벽에 절연막을 매개로 형성된 저장노드전극(106), 또한 이 저장노드전극(108)상에 순차적층된 캐패시터절연막(107) 및 플레이트전극(108)을 구비하여 이루어진 캐패시터에 의하며 메모리셀이 형성되고, 상기 트렌치(1051,1052…)의 측벽의 상기 절연막의 일부에 설치된 저장노드접속(141)을 매개로 상기 저장노드전극(106)과 상기 MOSFET의 소오스 또는 드레인영역의 한쪽이 접속되어 있는 것을 특징으로 하는 반도체 기억장치.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1312192A JPH03173174A (ja) | 1989-11-30 | 1989-11-30 | 半導体記憶装置 |
JP01-312192 | 1989-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910010722A true KR910010722A (ko) | 1991-06-29 |
KR940002393B1 KR940002393B1 (ko) | 1994-03-24 |
Family
ID=18026323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900019526A KR940002393B1 (ko) | 1989-11-30 | 1990-11-30 | 반도체기억장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5488242A (ko) |
JP (1) | JPH03173174A (ko) |
KR (1) | KR940002393B1 (ko) |
DE (1) | DE4038115C2 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960004443B1 (ko) * | 1992-03-19 | 1996-04-03 | 삼성전자주식회사 | 커패시터를 갖는 반도체 장치 및 그 제조방법 |
JPH08181316A (ja) * | 1994-12-22 | 1996-07-12 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR970707571A (ko) * | 1995-09-14 | 1997-12-01 | 이시마루 미키오 | 축소 치수용 다마스크 공정(damascene process for reduced feature size) |
US5905279A (en) * | 1996-04-09 | 1999-05-18 | Kabushiki Kaisha Toshiba | Low resistant trench fill for a semiconductor device |
JPH118295A (ja) | 1997-06-16 | 1999-01-12 | Nec Corp | 半導体装置及びその製造方法 |
TW356601B (en) * | 1997-08-28 | 1999-04-21 | Tsmc Acer Semiconductor Mfg Corp | Method for making memory cell of self-aligning field plate and structure of the same |
US6090661A (en) * | 1998-03-19 | 2000-07-18 | Lsi Logic Corporation | Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
US6097621A (en) * | 1998-05-04 | 2000-08-01 | Texas Instruments Incorporated | Memory cell array architecture for random access memory device |
US6034877A (en) * | 1998-06-08 | 2000-03-07 | International Business Machines Corporation | Semiconductor memory array having sublithographic spacing between adjacement trenches and method for making the same |
US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
DE10046302B4 (de) * | 2000-09-19 | 2005-03-31 | Promos Technologies, Inc. | Verfahren zum Bilden eines Tiefgrabenkondensators |
US7456439B1 (en) | 2001-03-22 | 2008-11-25 | T-Ram Semiconductor, Inc. | Vertical thyristor-based memory with trench isolation and its method of fabrication |
US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167954A (ja) * | 1984-09-11 | 1986-04-08 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
JPS61258468A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
US4980734A (en) * | 1988-05-31 | 1990-12-25 | Texas Instruments Incorporated | Dynamic memory cell using silicon-on-insulator transistor with trench capacitor |
US5047815A (en) * | 1988-08-18 | 1991-09-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device having a trench-stacked capacitor |
-
1989
- 1989-11-30 JP JP1312192A patent/JPH03173174A/ja active Pending
-
1990
- 1990-11-29 DE DE4038115A patent/DE4038115C2/de not_active Expired - Fee Related
- 1990-11-30 KR KR1019900019526A patent/KR940002393B1/ko not_active IP Right Cessation
-
1993
- 1993-11-24 US US08/156,931 patent/US5488242A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5488242A (en) | 1996-01-30 |
DE4038115A1 (de) | 1991-06-13 |
JPH03173174A (ja) | 1991-07-26 |
DE4038115C2 (de) | 1994-04-28 |
KR940002393B1 (ko) | 1994-03-24 |
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Payment date: 20030228 Year of fee payment: 10 |
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