KR910017673A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR910017673A
KR910017673A KR1019900003344A KR900003344A KR910017673A KR 910017673 A KR910017673 A KR 910017673A KR 1019900003344 A KR1019900003344 A KR 1019900003344A KR 900003344 A KR900003344 A KR 900003344A KR 910017673 A KR910017673 A KR 910017673A
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KR
South Korea
Prior art keywords
semiconductor device
substrate
projections
protrusions
main surface
Prior art date
Application number
KR1019900003344A
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English (en)
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KR940001505B1 (ko
Inventor
유우이치 미카다
도시히로 우사미
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910017673A publication Critical patent/KR910017673A/ko
Application granted granted Critical
Publication of KR940001505B1 publication Critical patent/KR940001505B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 및 제 2도는 본 발명에 따른 반도체장치에 관한 MOSFET의 제 1 실시예의 단면도 및 평면도, 제 3도는 제 1도 및 제 2도에 도시한 MOSFET의 제조공정을 도시한 단면도.

Claims (2)

  1. 반도체기판(21) 또는 절연체기판의 주표면상에 소정의 막(22,23b)을 매개로 형성되며 복수의 결정입자를 갖는 다결정실리콘으로 이루어진 돌출부(23a)와, 이 돌출부(23a)의 측벽에 게이트 절연막(25)을 매개로 대향되게 형성된 게이트전극 (26a), 상기 돌출부(23a)의 측벽에 상기 기판(21)의 두께방향으로 형성된 도전채널형성 영역을 갖춘 MOS형 전계효과 트랜지스터를 구비하여 이루어진 것을 특징으로 하는 반도체장치.
  2. 제 1항에 있어서, 상기 돌출부(23a)의 양측벽에 이 돌출부(23a)를 사이에 두고 대향하는 게이트 전극을 갖춘 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003344A 1988-09-14 1990-03-13 반도체장치 KR940001505B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63231058A JP2667465B2 (ja) 1988-09-14 1988-09-14 半導体装置

Publications (2)

Publication Number Publication Date
KR910017673A true KR910017673A (ko) 1991-11-05
KR940001505B1 KR940001505B1 (ko) 1994-02-23

Family

ID=16917627

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003344A KR940001505B1 (ko) 1988-09-14 1990-03-13 반도체장치

Country Status (4)

Country Link
EP (1) EP0363670B1 (ko)
JP (1) JP2667465B2 (ko)
KR (1) KR940001505B1 (ko)
DE (1) DE68925092T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07112067B2 (ja) * 1990-01-24 1995-11-29 株式会社東芝 半導体装置
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
DE69125323T2 (de) * 1990-07-24 1997-09-25 Semiconductor Energy Lab Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
US5302843A (en) * 1990-07-26 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Improved vertical channel transistor
US5214301A (en) * 1991-09-30 1993-05-25 Motorola, Inc. Field effect transistor having control and current electrodes positioned at a planar elevated surface
JPH05206394A (ja) * 1992-01-24 1993-08-13 Mitsubishi Electric Corp 電界効果トランジスタおよびその製造方法
US5324673A (en) * 1992-11-19 1994-06-28 Motorola, Inc. Method of formation of vertical transistor
US6118149A (en) * 1997-03-17 2000-09-12 Kabushiki Kaisha Toshiba Trench gate MOSFET
JP5701477B2 (ja) * 2008-09-18 2015-04-15 マイクロンメモリジャパン株式会社 電界効果トランジスタ、メモリセル、および電界効果トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2052853A (en) * 1979-06-29 1981-01-28 Ibm Vertical fet on an insulating substrate
US4470060A (en) * 1981-01-09 1984-09-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display with vertical non-single crystal semiconductor field effect transistors
JPS5897868A (ja) * 1981-12-08 1983-06-10 Canon Inc 多結晶薄膜トランジスタ
JPS61144875A (ja) * 1984-12-18 1986-07-02 Mitsubishi Electric Corp Ｍｏｓ集積回路

Also Published As

Publication number Publication date
EP0363670B1 (en) 1995-12-13
EP0363670A3 (en) 1990-11-22
JPH0279475A (ja) 1990-03-20
KR940001505B1 (ko) 1994-02-23
EP0363670A2 (en) 1990-04-18
DE68925092D1 (de) 1996-01-25
DE68925092T2 (de) 1996-05-30
JP2667465B2 (ja) 1997-10-27

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