KR920001753A - 종형 mos 트랜지스터와 그 제조 방법 - Google Patents

종형 mos 트랜지스터와 그 제조 방법 Download PDF

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KR920001753A
KR920001753A KR1019910009635A KR910009635A KR920001753A KR 920001753 A KR920001753 A KR 920001753A KR 1019910009635 A KR1019910009635 A KR 1019910009635A KR 910009635 A KR910009635 A KR 910009635A KR 920001753 A KR920001753 A KR 920001753A
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impurity region
trench
semiconductor substrate
insulating film
gate insulating
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KR1019910009635A
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KR950006483B1 (ko
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요시로 비바
슈니찌 히라끼
아끼히꼬 오사와
사또시 야나기야
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아오이 죠이찌
가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)

Abstract

내용 없음

Description

종형 MOS 트랜지스터와 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 종형 MOS 트랜지스터 도시한 단면도.
제2도는 제1도의 종형 MOS 트랜지스터의 등가 회로도.
제3도(A)-제3도(I)는 제1도에 도시한 종형 MOS 트랜지스터를 제조하는 방법을 도시한 단면도.

Claims (5)

  1. 반도체 기판(1), 이 반도체 기판의 표면에 설치된 제1불순물 영역(7), 제1불순물 영역의 아래쪽에 형성되어 이것과는 반대의 도전형을 지닌 제2 불순물 영역(5), 상기 반도체 기판의 표면에서부터 상기 제1 및 제2불순물영역을 관통해서 상기 제2불순물 영역의 저부보다도 깊게 형성된 트렌치(23), 및 이 트렌치 내부에 게이트 절연막(9 및15)를 끼우서 형성된 게이트 전극(11 및 17)로 이루어지고, 상기 절연막은 상기 제2불순물 영역의 저부 아래쪽이 두껍게 되어 있는 것을 특징으로 하는 종형 MOS 트랜지스터.
  2. 반도체 기판(1), 이 반도체 기판의 표면에 설치된 제1 불순물 영역(7), 이 제1불순물 영역의 아래쪽에 형성되고 이것과는 반대의 도전형을 지닌 2 불순물 영역(5), 상기 반도체 기판의 표면에서부터 상기 제1및 제2불순물 영역을 관통해서 상기 제2불순물 영역의 저부보다도 깊게 형성된 트렌치(23), 이 트렌치의 저부에 제1게이트 절연막(9)를 끼워서 형성된 플로팅 게이트 전극(11), 및 이 플로팅 게이트 전극의 상부에 커패시턴스용 절연막(13)을 끼워서 형성되고, 상기 제1 및 제2불순물 영역에 제2 게이트 절연막(15)를 끼우고 인접하는 주 게이트 전극(17)로 이루어지는 것을 특징으로 하는 종형 MOS 트랜지스터.
  3. 제2항에 있어서, 상기 제1 게이트 절연막이 상기 제2 게이트 절연막보다 두꺼운 것을 특징으로 하는 종형 MOS 트랜지스터.
  4. 제2항에 있어서, 상기 플로팅 게이트 전극 및 주 게이트 전극이 폴리실리콘으로 형성되는 것을 특징으로 하는 종형 MOS 트랜지스터.
  5. 반도체 기판(1)의 표면에 제1 불순물 영역(7)과 이 제2 불순물 영역의 아래족에 위치하여 이것과는 반대의 도전형을 지닌 제2 불순물 영역(5)을 형성하는 공정, 상기 반도체 기판의 표면에서부터 상기 제1 및 제2의 불순물 영역을 관통하는 상기 제2 불순물 영역의 저부보다도 깊게 연장된 트렌치(23)을 형성하는 공정, 및 이 트렌치 내에 게이트 절연막(25 및 29)를 끼워서 게이트 전극(27 및 31)을 형성하는 공정으로 이루어지고, 상기 게이트 절연막을 상기 제2 불순물 영역의 아래에 얇게 형성되어 있는 것을 특징으로 하는 종형 MOS 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910009635A 1990-06-13 1991-06-12 종형 mos트랜지스터와 그 제조방법 KR950006483B1 (ko)

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JP02-152652 1990-06-13
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CN107910268A (zh) * 2017-11-17 2018-04-13 杭州士兰集成电路有限公司 功率半导体器件及其制造方法
CN107910268B (zh) * 2017-11-17 2023-12-26 杭州士兰集昕微电子有限公司 功率半导体器件及其制造方法

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