KR920008964A - 전송 전하 증폭 장치 - Google Patents

전송 전하 증폭 장치 Download PDF

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Publication number
KR920008964A
KR920008964A KR1019910017858A KR910017858A KR920008964A KR 920008964 A KR920008964 A KR 920008964A KR 1019910017858 A KR1019910017858 A KR 1019910017858A KR 910017858 A KR910017858 A KR 910017858A KR 920008964 A KR920008964 A KR 920008964A
Authority
KR
South Korea
Prior art keywords
channel region
conductive
buried
charge amplifier
region
Prior art date
Application number
KR1019910017858A
Other languages
English (en)
Inventor
마사하루 하마사끼
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR920008964A publication Critical patent/KR920008964A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

전송 전하 증폭 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 평면도,
제2도는 제1도의 2-2선에 따른 단면도,
제3도는 제1도의 3-3선에 따른 단면도.

Claims (1)

  1. 반도체 기판 표면부의 제1도전형 웰내에 형성된 전하 전송용의 제2도전형 매입 채널 영역과, 상기 매입 채널영역에 의해 서로 떨어지도록 형성된 제1도전형의 소오스 영역과 드레인 영역 및 상기 전하 전송용 매입 채널영역 표면부에 형성된 제1도전형 표면 채널 영역으로 이루어지는 전합 게이트형 FET와, 상기 표면 채널 영역상에 절연막을 거쳐서 형성된 절연 게이트 전극과를 구비하고, 상기 접합 게이트형 FET의 소오스와 상기 절연 게이트 전극을 전기적으로 접속해서 이루어지는 것을 특징으로 하는 전송 전하 증폭 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910017858A 1990-10-12 1991-10-11 전송 전하 증폭 장치 KR920008964A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-274219 1990-10-12
JP2274219A JPH04148536A (ja) 1990-10-12 1990-10-12 転送電荷増幅装置

Publications (1)

Publication Number Publication Date
KR920008964A true KR920008964A (ko) 1992-05-28

Family

ID=17538687

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910017858A KR920008964A (ko) 1990-10-12 1991-10-11 전송 전하 증폭 장치

Country Status (5)

Country Link
US (1) US5229630A (ko)
EP (1) EP0480412B1 (ko)
JP (1) JPH04148536A (ko)
KR (1) KR920008964A (ko)
DE (1) DE69120367T2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3401808B2 (ja) * 1992-04-16 2003-04-28 ソニー株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
KR950002084A (ko) * 1993-06-22 1995-01-04 오가 노리오 전하전송장치
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
DE69512505T2 (de) * 1994-06-23 2000-04-13 Koninkl Philips Electronics Nv Ladungsgekoppelte anordnung und bildaufnahmevorrichtung die diese ladungsgekoppelte anordnung enthält
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
DE2911726C2 (de) * 1978-03-27 1985-08-01 Ncr Corp., Dayton, Ohio Verfahren zur Herstellung eines Feldeffekttransistors
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS61187368A (ja) * 1985-02-15 1986-08-21 Toshiba Corp 電荷転送装置
JP2666928B2 (ja) * 1987-07-13 1997-10-22 株式会社東芝 電荷転送素子の出力検出器
JPH0771235B2 (ja) * 1989-01-10 1995-07-31 三菱電機株式会社 電荷検出回路の駆動方法

Also Published As

Publication number Publication date
EP0480412B1 (en) 1996-06-19
US5229630A (en) 1993-07-20
EP0480412A2 (en) 1992-04-15
DE69120367D1 (de) 1996-07-25
DE69120367T2 (de) 1997-02-13
EP0480412A3 (en) 1993-04-21
JPH04148536A (ja) 1992-05-21

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