KR860001489A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR860001489A
KR860001489A KR1019850004859A KR850004859A KR860001489A KR 860001489 A KR860001489 A KR 860001489A KR 1019850004859 A KR1019850004859 A KR 1019850004859A KR 850004859 A KR850004859 A KR 850004859A KR 860001489 A KR860001489 A KR 860001489A
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KR
South Korea
Prior art keywords
impurity
distribution region
impurity distribution
semiconductor device
region
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KR1019850004859A
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English (en)
Inventor
마사다다(외 1) 호리우찌
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR860001489A publication Critical patent/KR860001489A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도 내지 제 4도는 본 발명의 1실시예에 있어서의 반도체 장치의 제조 공정을 도시한 단면도.

Claims (8)

  1. 적어도 드레인 영역이 적어도 제 1의 불순물 분포영역과 제 2의 불순물 분포 영역으로 구성되는 전계효과 트랜지스터에 있어서, 그 제 1의 불순물 분포영역은, 반도체 기판 표면에서 최대 불순물 농도를 가지며, 그 제 2의 불순물 분포 영역은, 그 반도체 기판 내부에서 최대 불순물 농도를 갖고, 또한 적어도 그제 2의 불순물 분포 영역은 게이트 전극 끝을 불순물 도입 경계로 하여 형성되여 있는 것을 특징으로 하는 반도체 장치.
  2. 드레인 영역과 소오스 영역이 적어도 제 1의 불순물 분포영역과 제 2의 불순물 분포 영역으로 구성되는 전계효과 트랜지스터에 있어서, 그 제 1의 불순물 분포영역은, 반도체 기판 표면에서 최대 불순물 농도를 가지며, 그 제 2의 불순물 분포 영역은, 그 반도체 기판 내부에서 최대 불순물 농도를 가지며, 또한 적어도 그제 2의 불순물 분포 영역은 게이트 전극 끝을 불순물 도입 경계로 해서 형성되는 것을 특징으로 하는 반도체 장치.
  3. 상기 반도체 기판 표면에 있어서의 불순물 농도가 1X1018~1X1019cm-3의 범위에 있는 것을 특징으로 하는 특허청구의 버무이 제 2항 기재의 반도체 장치.
  4. 상기 반도체 기판 표면에 있어서의 불순물 농도가 1X1018~1X1018cm-3의 범위에 있는 것을 특징으로 하는 특허청구의 버무이 제 2항 기재의 반도체 장치.
  5. 상기 제 2의 불순물 분포 영역에 있어서의 최대 불순물 농도가 5X1017~5X1018cm-3의 범위에 있는 것을 특징으로 하는 특허청구의 범위 제 3항 기재의 반도체 장치.
  6. 상기 반도체 기판 표면에 있어서의 1X1018cm-3이하의 불순물 농도 영역이 게이트 전극의 하부에 있는 것을 특징으로 하는 특허 청구의 범위 제 5항 기재의 반도체 장치.
  7. 상기 제 1의 불순물 분포 영역의 접합 깊이를 0.1~0.3㎛로 하는 것을 특징으로 하는 특허청구의 범위 제 5항 기재의 반도체 장치.
  8. 상기 제 2의 불순물 분포 영역의 접합 깊이를, 상기 제 1의 불순물 분포 영역의 접합 깊이와 대략 같도록 하는 것을 특징으로 하는 특허청구의 범위 제 7항 기재의 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850004859A 1984-07-27 1985-07-08 반도체장치 KR860001489A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59155223A JPH0612822B2 (ja) 1984-07-27 1984-07-27 半導体装置
JP59-155223 1984-07-27

Publications (1)

Publication Number Publication Date
KR860001489A true KR860001489A (ko) 1986-02-26

Family

ID=15601214

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850004859A KR860001489A (ko) 1984-07-27 1985-07-08 반도체장치

Country Status (3)

Country Link
EP (1) EP0171003A3 (ko)
JP (1) JPH0612822B2 (ko)
KR (1) KR860001489A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834309B2 (ja) * 1986-11-25 1996-03-29 セイコーエプソン株式会社 Ｍｏｓ型半導体装置の製造方法
US4844776A (en) * 1987-12-04 1989-07-04 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making folded extended window field effect transistor
JP2507557B2 (ja) * 1988-09-29 1996-06-12 三菱電機株式会社 半導体装置の製造方法
US7196382B2 (en) 2001-05-26 2007-03-27 Ihp Gmbh Innovations For High Performance Microelectronics/ Institut Fur Innovative Mikroelektronik Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028717A (en) * 1975-09-22 1977-06-07 Ibm Corporation Field effect transistor having improved threshold stability
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
JPS6072272A (ja) * 1983-09-28 1985-04-24 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0171003A3 (en) 1987-04-22
JPH0612822B2 (ja) 1994-02-16
JPS6135562A (ja) 1986-02-20
EP0171003A2 (en) 1986-02-12

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