RU94036010A - Транзистор с управлением полем с порогом ферми с пониженным затвором и диффузионной емкостью - Google Patents

Транзистор с управлением полем с порогом ферми с пониженным затвором и диффузионной емкостью

Info

Publication number
RU94036010A
RU94036010A RU94036010/25A RU94036010A RU94036010A RU 94036010 A RU94036010 A RU 94036010A RU 94036010/25 A RU94036010/25 A RU 94036010/25A RU 94036010 A RU94036010 A RU 94036010A RU 94036010 A RU94036010 A RU 94036010A
Authority
RU
Russia
Prior art keywords
fermi
conductivity
field
controlled
gate capacitance
Prior art date
Application number
RU94036010/25A
Other languages
English (en)
Other versions
RU2120155C1 (ru
Inventor
В.Винал Альберт
Us]
Original Assignee
Сандербед Текнолоджиз
Сандербед Текнолоджиз, Инк.
Инк. (US)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/826,939 external-priority patent/US5194923A/en
Application filed by Сандербед Текнолоджиз, Сандербед Текнолоджиз, Инк., Инк. (US) filed Critical Сандербед Текнолоджиз
Publication of RU94036010A publication Critical patent/RU94036010A/ru
Application granted granted Critical
Publication of RU2120155C1 publication Critical patent/RU2120155C1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

Предлагается усовершенствованный полевой транзистор Ферми с малыми диффузионной емкостью и емкостью затвора, в котором носители заряда могут перемещаться внутри канала на определенной глубине в подложке под затвором, при этом у поверхности полупроводника не требуется создавать инверсионный слой. Для создания полевого транзистора Ферми с малыми емкостями желательно воспользоваться карманом Ферми, имеющим определенную глубину, тип проводимости которого противоположен типу проводимости подложки и совпадает с типом проводимости областей диффузии для формирования стока и истока.

Claims (1)

  1. Предлагается усовершенствованный полевой транзистор Ферми с малыми диффузионной емкостью и емкостью затвора, в котором носители заряда могут перемещаться внутри канала на определенной глубине в подложке под затвором, при этом у поверхности полупроводника не требуется создавать инверсионный слой. Для создания полевого транзистора Ферми с малыми емкостями желательно воспользоваться карманом Ферми, имеющим определенную глубину, тип проводимости которого противоположен типу проводимости подложки и совпадает с типом проводимости областей диффузии для формирования стока и истока.
RU94036010A 1992-01-28 1993-01-28 Полевой транзистор RU2120155C1 (ru)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US07/826,939 US5194923A (en) 1992-01-28 1992-01-28 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US826.939 1992-01-28
US826939 1992-01-28
US07/977,689 US5369295A (en) 1992-01-28 1992-11-18 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US977.689 1992-11-18
PCT/US1993/000992 WO1993015524A1 (en) 1992-01-28 1993-01-28 Fermi threshold field effect transistor with reduced gate and diffusion capacitance
US977689 2001-10-16

Publications (2)

Publication Number Publication Date
RU94036010A true RU94036010A (ru) 1996-09-10
RU2120155C1 RU2120155C1 (ru) 1998-10-10

Family

ID=27125040

Family Applications (1)

Application Number Title Priority Date Filing Date
RU94036010A RU2120155C1 (ru) 1992-01-28 1993-01-28 Полевой транзистор

Country Status (10)

Country Link
US (2) US5369295A (ru)
EP (1) EP0624282B1 (ru)
JP (1) JP2662095B2 (ru)
KR (1) KR0181742B1 (ru)
AT (1) ATE160653T1 (ru)
AU (1) AU663836B2 (ru)
CA (1) CA2117426C (ru)
DE (1) DE69315424T2 (ru)
RU (1) RU2120155C1 (ru)
WO (1) WO1993015524A1 (ru)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5440160A (en) * 1992-01-28 1995-08-08 Thunderbird Technologies, Inc. High saturation current, low leakage current fermi threshold field effect transistor
US5525822A (en) * 1991-01-28 1996-06-11 Thunderbird Technologies, Inc. Fermi threshold field effect transistor including doping gradient regions
US5543654A (en) * 1992-01-28 1996-08-06 Thunderbird Technologies, Inc. Contoured-tub fermi-threshold field effect transistor and method of forming same
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
US5786620A (en) * 1992-01-28 1998-07-28 Thunderbird Technologies, Inc. Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
DE69429656T2 (de) * 1993-02-23 2002-10-17 Thunderbird Tech Inc Fermi-schwellenspannungs-feldeffekttransistor mit hohem sättigungsstrom und niedrigem leckstrom
US5424226A (en) * 1994-04-11 1995-06-13 Xerox Corporation Method of fabricating NMOS and PMOS FET's in a CMOS process
JP3256084B2 (ja) * 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
JPH09312399A (ja) * 1995-07-14 1997-12-02 Seiko Instr Inc 半導体装置とその製造方法
US5698884A (en) * 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
JP3553576B2 (ja) * 1996-03-22 2004-08-11 株式会社ニコン 固体撮像装置、ｍｏｓトランジスタ及び寄生容量抑制方法
US5817564A (en) * 1996-06-28 1998-10-06 Harris Corporation Double diffused MOS device and method
TW432636B (en) * 1997-09-26 2001-05-01 Thunderbird Tech Inc Metal gate fermi-threshold field effect transistor
US6373094B2 (en) * 1998-09-11 2002-04-16 Texas Instruments Incorporated EEPROM cell using conventional process steps
US6365475B1 (en) * 2000-03-27 2002-04-02 United Microelectronics Corp. Method of forming a MOS transistor
US6555872B1 (en) 2000-11-22 2003-04-29 Thunderbird Technologies, Inc. Trench gate fermi-threshold field effect transistors
US6621128B2 (en) * 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
US6465267B1 (en) * 2001-04-02 2002-10-15 Advanced Micro Devices, Inc. Method of measuring gate capacitance to determine the electrical thickness of gate dielectrics
US6806123B2 (en) * 2002-04-26 2004-10-19 Micron Technology, Inc. Methods of forming isolation regions associated with semiconductor constructions
US6830966B2 (en) * 2002-06-12 2004-12-14 Chartered Semiconductor Manufacturing Ltd. Fully silicided NMOS device for electrostatic discharge protection
US6756619B2 (en) * 2002-08-26 2004-06-29 Micron Technology, Inc. Semiconductor constructions
US6867104B2 (en) * 2002-12-28 2005-03-15 Intel Corporation Method to form a structure to decrease area capacitance within a buried insulator device
JP4615229B2 (ja) * 2004-02-27 2011-01-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2005294549A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp Ｍｏｓ型トランジスタ
EP1820211B1 (en) * 2004-12-07 2012-08-01 Thunderbird Technologies, Inc. Gate engineered fermi-fets with strained silicon channel and manufacturing method
US7271457B2 (en) * 2005-03-04 2007-09-18 Bae Systems Information And Electronic Systems Integration Inc. Abrupt channel doping profile for fermi threshold field effect transistors
US20070001199A1 (en) * 2005-06-30 2007-01-04 Thunderbird Technologies, Inc. Circuits and Integrated Circuits Including Field Effect Transistors Having Differing Body Effects
US20070013026A1 (en) * 2005-07-12 2007-01-18 Ching-Hung Kao Varactor structure and method for fabricating the same
US7397072B2 (en) * 2005-12-01 2008-07-08 Board Of Regents, The University Of Texas System Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device
US7790527B2 (en) * 2006-02-03 2010-09-07 International Business Machines Corporation High-voltage silicon-on-insulator transistors and methods of manufacturing the same
US7408222B2 (en) * 2006-03-27 2008-08-05 Infineon Technologies Ag Charge trapping device and method of producing the charge trapping device
US20090134476A1 (en) * 2007-11-13 2009-05-28 Thunderbird Technologies, Inc. Low temperature coefficient field effect transistors and design and fabrication methods
JP5135004B2 (ja) * 2008-02-29 2013-01-30 株式会社東芝 不揮発性半導体記憶装置、及びディプレッション型ｍｏｓトランジスタ
US20100123206A1 (en) * 2008-11-18 2010-05-20 Thunderbird Technologies, Inc. Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated
CN104009078B (zh) * 2013-02-26 2016-12-28 中芯国际集成电路制造(上海)有限公司 无结晶体管及其制造方法
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US20150123130A1 (en) * 2013-11-06 2015-05-07 United Microelectronics Corp. Test key structure
JP2016021504A (ja) * 2014-07-15 2016-02-04 ソニー株式会社 増幅装置、半導体装置、製造方法、電子機器
KR102032441B1 (ko) 2019-09-03 2019-10-15 주식회사 태현이엔지 하이브리드 차아염소산나트륨 발생 장치 및 하이브리드 차아염소산나트륨 발생 시스템

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor
US3872491A (en) * 1973-03-08 1975-03-18 Sprague Electric Co Asymmetrical dual-gate FET
US4042945A (en) * 1974-02-28 1977-08-16 Westinghouse Electric Corporation N-channel MOS transistor
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor
US4108686A (en) * 1977-07-22 1978-08-22 Rca Corp. Method of making an insulated gate field effect transistor by implanted double counterdoping
JPS5587481A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Mis type semiconductor device
JPS5587483A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Mis type semiconductor device
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
JPS5691473A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Semiconductor
JPS5710268A (en) * 1980-11-25 1982-01-19 Nec Corp Semiconductor device
JPS5816565A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd 絶縁ゲ−ト形電界効果トランジスタ
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
DE3138747A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Selbstsperrender feldeffekt-transistor des verarmungstyps
SU1097139A1 (ru) * 1981-12-18 1987-04-15 Организация П/Я А-1889 Полевой транзистор
USRE32800E (en) * 1981-12-30 1988-12-13 Sgs-Thomson Microelectronics, Inc. Method of making mosfet by multiple implantations followed by a diffusion step
US4491807A (en) * 1982-05-20 1985-01-01 Rca Corporation FET Negative resistance circuits
JPS5929460A (ja) * 1982-08-11 1984-02-16 Seiko Epson Corp 薄膜トランジスタ
US4697198A (en) * 1984-08-22 1987-09-29 Hitachi, Ltd. MOSFET which reduces the short-channel effect
JPS6153775A (ja) * 1984-08-24 1986-03-17 Oki Electric Ind Co Ltd 半導体集積回路装置
JPS61160975A (ja) * 1985-01-08 1986-07-21 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
JPS61185973A (ja) * 1985-02-13 1986-08-19 Nec Corp 半導体装置
JPS61292358A (ja) * 1985-06-19 1986-12-23 Fujitsu Ltd Ｍｉｓ型電界効果トランジスタの製造方法
US4701775A (en) * 1985-10-21 1987-10-20 Motorola, Inc. Buried n- channel implant for NMOS transistors
JPS62128175A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd 半導体装置
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS62248255A (ja) * 1986-04-21 1987-10-29 Nissan Motor Co Ltd 薄膜トランジスタ
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
JPS6353975A (ja) * 1986-08-22 1988-03-08 Nec Corp Ｍｉｓトランジスタ及びその製造方法
US5192990A (en) * 1986-09-18 1993-03-09 Eastman Kodak Company Output circuit for image sensor
EP0274278B1 (en) * 1987-01-05 1994-05-25 Seiko Instruments Inc. MOS field effect transistor and method of manufacturing the same
US4928156A (en) * 1987-07-13 1990-05-22 Motorola, Inc. N-channel MOS transistors having source/drain regions with germanium
US4907048A (en) * 1987-11-23 1990-03-06 Xerox Corporation Double implanted LDD transistor self-aligned with gate
US4899202A (en) * 1988-07-08 1990-02-06 Texas Instruments Incorporated High performance silicon-on-insulator transistor with body node to source node connection
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
JPH0714065B2 (ja) * 1990-03-19 1995-02-15 株式会社東芝 Ｍｏｓ型半導体装置及びその製造方法
US5121104A (en) * 1991-02-08 1992-06-09 Nelson Alan H Pool alarm
US5194923A (en) * 1992-01-28 1993-03-16 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance

Also Published As

Publication number Publication date
CA2117426A1 (en) 1993-08-05
AU663836B2 (en) 1995-10-19
WO1993015524A1 (en) 1993-08-05
AU3609793A (en) 1993-09-01
KR0181742B1 (ko) 1999-03-20
DE69315424T2 (de) 1998-07-09
EP0624282A1 (en) 1994-11-17
DE69315424D1 (de) 1998-01-08
EP0624282B1 (en) 1997-11-26
ATE160653T1 (de) 1997-12-15
JPH07503582A (ja) 1995-04-13
RU2120155C1 (ru) 1998-10-10
US5374836A (en) 1994-12-20
US5369295A (en) 1994-11-29
CA2117426C (en) 2000-03-28
JP2662095B2 (ja) 1997-10-08

Similar Documents

Publication Publication Date Title
RU94036010A (ru) Транзистор с управлением полем с порогом ферми с пониженным затвором и диффузионной емкостью
KR910017676A (ko) 박막트랜지스터
CA2420821A1 (en) Lateral junction type field effect transistor
KR920003549A (ko) Mis형 반도체장치
EP0335750A3 (en) Vertical power mosfet having high withstand voltage and high switching speed
KR850005163A (ko) 전계효과형 트랜지스터의 제조방법
SE8007492L (sv) Felteffekttransistor av mos-typ
ES8800789A1 (es) Perfeccionamientos en un dispositivo transistor mos
KR900017104A (ko) Mos형 전계효과트랜지스터
KR920008967A (ko) 반도체장치
KR910020740A (ko) 반도체기억장치
KR930018754A (ko) 반도체 장치
KR930022601A (ko) 반도체 장치의 제조방법
KR920008964A (ko) 전송 전하 증폭 장치
KR860001489A (ko) 반도체장치
JPS5723259A (en) Complementary type mos semiconductor device
KR850005174A (ko) 헤테로 구조를 가진 반도체 장치
KR920003544A (ko) 복수개의 게이트 절연층을 갖는 박막트랜지스터
JPS5346287A (en) Production of semiconductor integrated circuit
KR860003667A (ko) 쌍-게이트(Dual-gate)를 이용한 박막트랜지스터
JPS5384573A (en) Manufacture for mis type semiconductor device
JPS52136583A (en) Mos type semiconductor device
JPS5214380A (en) Method for production of silicon gate mos transistor
JPS5489587A (en) Mos field effect type transistor
JPS54102877A (en) Field effect transistor

Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20100129