KR860003667A - 쌍-게이트(Dual-gate)를 이용한 박막트랜지스터 - Google Patents
쌍-게이트(Dual-gate)를 이용한 박막트랜지스터 Download PDFInfo
- Publication number
- KR860003667A KR860003667A KR1019840006800A KR840006800A KR860003667A KR 860003667 A KR860003667 A KR 860003667A KR 1019840006800 A KR1019840006800 A KR 1019840006800A KR 840006800 A KR840006800 A KR 840006800A KR 860003667 A KR860003667 A KR 860003667A
- Authority
- KR
- South Korea
- Prior art keywords
- film transistor
- thin film
- gate
- dual
- pair
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims 3
- 239000010408 film Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 쌍-게이트 박막트랜지스터의 구조도,
Claims (1)
- 박막트랜지스터의 도전통로, 소오스와드레인층을 형성하는 반도체를 다결정 실리콘으로하되 전연막의 두께를 500-1000nm으로 하여 쌍-게이트 형성함을 특징으로 하는 쌍-게이드를 이용한 박막트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019840006800A KR870000854B1 (ko) | 1984-10-31 | 1984-10-31 | 쌍-게이트(Dual-gate)를 이용한 박막트랜지스터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019840006800A KR870000854B1 (ko) | 1984-10-31 | 1984-10-31 | 쌍-게이트(Dual-gate)를 이용한 박막트랜지스터 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860003667A true KR860003667A (ko) | 1986-05-28 |
| KR870000854B1 KR870000854B1 (ko) | 1987-04-25 |
Family
ID=19236007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019840006800A KR870000854B1 (ko) | 1984-10-31 | 1984-10-31 | 쌍-게이트(Dual-gate)를 이용한 박막트랜지스터 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR870000854B1 (ko) |
-
1984
- 1984-10-31 KR KR1019840006800A patent/KR870000854B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR870000854B1 (ko) | 1987-04-25 |
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| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030328 Year of fee payment: 17 |
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| LAPS | Lapse due to unpaid annual fee |