SE8008738L - Tunnfilmstransistor - Google Patents

Tunnfilmstransistor

Info

Publication number
SE8008738L
SE8008738L SE8008738A SE8008738A SE8008738L SE 8008738 L SE8008738 L SE 8008738L SE 8008738 A SE8008738 A SE 8008738A SE 8008738 A SE8008738 A SE 8008738A SE 8008738 L SE8008738 L SE 8008738L
Authority
SE
Sweden
Prior art keywords
thin film
field effect
effect transistor
atomic percent
gate insulator
Prior art date
Application number
SE8008738A
Other languages
Unknown language ( )
English (en)
Inventor
S H Holmberg
R A Flasck
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE8008738L publication Critical patent/SE8008738L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
SE8008738A 1979-12-13 1980-12-12 Tunnfilmstransistor SE8008738L (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US20827880A 1980-11-19 1980-11-19

Publications (1)

Publication Number Publication Date
SE8008738L true SE8008738L (sv) 1981-06-14

Family

ID=26799985

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8008738A SE8008738L (sv) 1979-12-13 1980-12-12 Tunnfilmstransistor

Country Status (14)

Country Link
KR (2) KR840001605B1 (sv)
AU (2) AU538008B2 (sv)
BE (1) BE886630A (sv)
CA (3) CA1153480A (sv)
DE (2) DE3051063C2 (sv)
FR (1) FR2474763B1 (sv)
GB (2) GB2067353B (sv)
IE (1) IE51076B1 (sv)
IL (1) IL61679A (sv)
IT (1) IT1193999B (sv)
MX (1) MX151189A (sv)
NL (2) NL8006770A (sv)
SE (1) SE8008738L (sv)
SG (1) SG72684G (sv)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5677547A (en) * 1982-04-30 1997-10-14 Seiko Epson Corporation Thin film transistor and display device including same
US5650637A (en) * 1982-04-30 1997-07-22 Seiko Epson Corporation Active matrix assembly
US5365079A (en) * 1982-04-30 1994-11-15 Seiko Epson Corporation Thin film transistor and display device including same
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4752814A (en) * 1984-03-12 1988-06-21 Xerox Corporation High voltage thin film transistor
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4769338A (en) * 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4673957A (en) * 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
KR100741798B1 (ko) * 2004-12-30 2007-07-25 엘지전자 주식회사 건조기 일체형 세탁기
CN112420821B (zh) * 2020-10-29 2021-11-19 北京元芯碳基集成电路研究院 一种基于碳基材料的y型栅结构及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3384792A (en) * 1965-06-01 1968-05-21 Electro Optical Systems Inc Stacked electrode field effect triode
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
DE2820331C3 (de) * 1978-05-10 1982-03-18 Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung
GB2052853A (en) * 1979-06-29 1981-01-28 Ibm Vertical fet on an insulating substrate

Also Published As

Publication number Publication date
IE51076B1 (en) 1986-10-01
BE886630A (fr) 1981-04-01
DE3051063C2 (sv) 1991-04-11
IT8026642A0 (it) 1980-12-12
FR2474763B1 (fr) 1987-03-20
AU6531380A (en) 1981-06-18
DE3046358C2 (sv) 1987-02-26
IT1193999B (it) 1988-08-31
AU554058B2 (en) 1986-08-07
MX151189A (es) 1984-10-09
IL61679A (en) 1984-11-30
KR840001605B1 (ko) 1984-10-11
DE3046358A1 (de) 1981-09-17
IL61679A0 (en) 1981-01-30
KR850001478A (ko) 1985-02-18
AU2845184A (en) 1984-09-13
KR850000902B1 (ko) 1985-06-26
IE802615L (en) 1981-06-13
NL8006770A (nl) 1981-07-16
GB2067353A (en) 1981-07-22
GB2067353B (en) 1984-07-04
CA1163377A (en) 1984-03-06
FR2474763A1 (fr) 1981-07-31
GB8326775D0 (en) 1983-11-09
NL8401928A (nl) 1984-10-01
KR830004680A (ko) 1983-07-16
AU538008B2 (en) 1984-07-26
CA1188008A (en) 1985-05-28
CA1153480A (en) 1983-09-06
SG72684G (en) 1985-03-29
GB2131605B (en) 1985-02-13
GB2131605A (en) 1984-06-20

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