NL8006770A - Transistor met veldwerking in de vorm van een dunne foelie. - Google Patents
Transistor met veldwerking in de vorm van een dunne foelie. Download PDFInfo
- Publication number
- NL8006770A NL8006770A NL8006770A NL8006770A NL8006770A NL 8006770 A NL8006770 A NL 8006770A NL 8006770 A NL8006770 A NL 8006770A NL 8006770 A NL8006770 A NL 8006770A NL 8006770 A NL8006770 A NL 8006770A
- Authority
- NL
- Netherlands
- Prior art keywords
- member according
- transistor
- transistor member
- metal
- deposited
- Prior art date
Links
- 239000011888 foil Substances 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 239000012212 insulator Substances 0.000 claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 10
- 101150068246 V-MOS gene Proteins 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 239000004020 conductor Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 238000000151 deposition Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 210000000056 organ Anatomy 0.000 description 6
- 230000000638 stimulation Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002178 crystalline material Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000021 stimulant Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000004936 stimulating effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000878 H alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910001199 N alloy Inorganic materials 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000347389 Serranus cabrilla Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- AGVAZMGAQJOSFJ-WZHZPDAFSA-M cobalt(2+);[(2r,3s,4r,5s)-5-(5,6-dimethylbenzimidazol-1-yl)-4-hydroxy-2-(hydroxymethyl)oxolan-3-yl] [(2r)-1-[3-[(1r,2r,3r,4z,7s,9z,12s,13s,14z,17s,18s,19r)-2,13,18-tris(2-amino-2-oxoethyl)-7,12,17-tris(3-amino-3-oxopropyl)-3,5,8,8,13,15,18,19-octamethyl-2 Chemical compound [Co+2].N#[C-].[N-]([C@@H]1[C@H](CC(N)=O)[C@@]2(C)CCC(=O)NC[C@@H](C)OP(O)(=O)O[C@H]3[C@H]([C@H](O[C@@H]3CO)N3C4=CC(C)=C(C)C=C4N=C3)O)\C2=C(C)/C([C@H](C\2(C)C)CCC(N)=O)=N/C/2=C\C([C@H]([C@@]/2(CC(N)=O)C)CCC(N)=O)=N\C\2=C(C)/C2=N[C@]1(C)[C@@](C)(CC(N)=O)[C@@H]2CCC(N)=O AGVAZMGAQJOSFJ-WZHZPDAFSA-M 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- -1 pal-10 ladium Chemical compound 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003923 scrap metal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10301179A | 1979-12-13 | 1979-12-13 | |
| US10301179 | 1979-12-13 | ||
| US20827880A | 1980-11-19 | 1980-11-19 | |
| US20827880 | 1980-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8006770A true NL8006770A (nl) | 1981-07-16 |
Family
ID=26799985
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8006770A NL8006770A (nl) | 1979-12-13 | 1980-12-12 | Transistor met veldwerking in de vorm van een dunne foelie. |
| NL8401928A NL8401928A (nl) | 1979-12-13 | 1984-06-18 | Uit dunne lagen opgebouwde veldeffecttransistor. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8401928A NL8401928A (nl) | 1979-12-13 | 1984-06-18 | Uit dunne lagen opgebouwde veldeffecttransistor. |
Country Status (14)
| Country | Link |
|---|---|
| KR (2) | KR840001605B1 (sv) |
| AU (2) | AU538008B2 (sv) |
| BE (1) | BE886630A (sv) |
| CA (3) | CA1153480A (sv) |
| DE (2) | DE3046358A1 (sv) |
| FR (1) | FR2474763B1 (sv) |
| GB (2) | GB2067353B (sv) |
| IE (1) | IE51076B1 (sv) |
| IL (1) | IL61679A (sv) |
| IT (1) | IT1193999B (sv) |
| MX (1) | MX151189A (sv) |
| NL (2) | NL8006770A (sv) |
| SE (1) | SE8008738L (sv) |
| SG (1) | SG72684G (sv) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
| US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
| FR2527385B1 (fr) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor |
| US6294796B1 (en) * | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
| US5677547A (en) * | 1982-04-30 | 1997-10-14 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US5650637A (en) * | 1982-04-30 | 1997-07-22 | Seiko Epson Corporation | Active matrix assembly |
| US5365079A (en) * | 1982-04-30 | 1994-11-15 | Seiko Epson Corporation | Thin film transistor and display device including same |
| US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
| US4633284A (en) * | 1983-11-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Thin film transistor having an annealed gate oxide and method of making same |
| US4620208A (en) * | 1983-11-08 | 1986-10-28 | Energy Conversion Devices, Inc. | High performance, small area thin film transistor |
| US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
| US4752814A (en) * | 1984-03-12 | 1988-06-21 | Xerox Corporation | High voltage thin film transistor |
| US4668968A (en) * | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| US4673957A (en) * | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| KR100741798B1 (ko) * | 2004-12-30 | 2007-07-25 | 엘지전자 주식회사 | 건조기 일체형 세탁기 |
| CN112420821B (zh) * | 2020-10-29 | 2021-11-19 | 北京元芯碳基集成电路研究院 | 一种基于碳基材料的y型栅结构及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3384792A (en) * | 1965-06-01 | 1968-05-21 | Electro Optical Systems Inc | Stacked electrode field effect triode |
| US4115799A (en) * | 1977-01-26 | 1978-09-19 | Westinghouse Electric Corp. | Thin film copper transition between aluminum and indium copper films |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| DE2820331C3 (de) * | 1978-05-10 | 1982-03-18 | Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart | Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung |
| GB2052853A (en) * | 1979-06-29 | 1981-01-28 | Ibm | Vertical fet on an insulating substrate |
-
1980
- 1980-12-09 DE DE19803046358 patent/DE3046358A1/de active Granted
- 1980-12-09 IL IL61679A patent/IL61679A/xx unknown
- 1980-12-09 DE DE3051063A patent/DE3051063C2/de not_active Expired - Fee Related
- 1980-12-10 GB GB8039608A patent/GB2067353B/en not_active Expired
- 1980-12-11 MX MX185169A patent/MX151189A/es unknown
- 1980-12-12 KR KR1019800004728A patent/KR840001605B1/ko active
- 1980-12-12 FR FR8026402A patent/FR2474763B1/fr not_active Expired
- 1980-12-12 SE SE8008738A patent/SE8008738L/sv unknown
- 1980-12-12 NL NL8006770A patent/NL8006770A/nl not_active Application Discontinuation
- 1980-12-12 AU AU65313/80A patent/AU538008B2/en not_active Ceased
- 1980-12-12 CA CA000366712A patent/CA1153480A/en not_active Expired
- 1980-12-12 BE BE0/203147A patent/BE886630A/fr not_active IP Right Cessation
- 1980-12-12 IE IE2615/80A patent/IE51076B1/en unknown
- 1980-12-12 IT IT26642/80A patent/IT1193999B/it active
-
1983
- 1983-05-20 CA CA000428672A patent/CA1163377A/en not_active Expired
- 1983-10-06 GB GB08326775A patent/GB2131605B/en not_active Expired
-
1984
- 1984-05-21 AU AU28451/84A patent/AU554058B2/en not_active Ceased
- 1984-06-18 NL NL8401928A patent/NL8401928A/nl not_active Application Discontinuation
- 1984-07-14 KR KR1019840004146A patent/KR850000902B1/ko not_active IP Right Cessation
- 1984-08-01 CA CA000460196A patent/CA1188008A/en not_active Expired
- 1984-10-17 SG SG726/84A patent/SG72684G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2131605A (en) | 1984-06-20 |
| DE3051063C2 (sv) | 1991-04-11 |
| GB2131605B (en) | 1985-02-13 |
| IT1193999B (it) | 1988-08-31 |
| CA1163377A (en) | 1984-03-06 |
| AU538008B2 (en) | 1984-07-26 |
| IL61679A0 (en) | 1981-01-30 |
| MX151189A (es) | 1984-10-09 |
| AU2845184A (en) | 1984-09-13 |
| SG72684G (en) | 1985-03-29 |
| FR2474763A1 (fr) | 1981-07-31 |
| DE3046358A1 (de) | 1981-09-17 |
| KR850001478A (ko) | 1985-02-18 |
| BE886630A (fr) | 1981-04-01 |
| NL8401928A (nl) | 1984-10-01 |
| CA1153480A (en) | 1983-09-06 |
| FR2474763B1 (fr) | 1987-03-20 |
| SE8008738L (sv) | 1981-06-14 |
| CA1188008A (en) | 1985-05-28 |
| KR850000902B1 (ko) | 1985-06-26 |
| KR830004680A (ko) | 1983-07-16 |
| GB2067353A (en) | 1981-07-22 |
| KR840001605B1 (ko) | 1984-10-11 |
| IL61679A (en) | 1984-11-30 |
| AU554058B2 (en) | 1986-08-07 |
| IE802615L (en) | 1981-06-13 |
| GB8326775D0 (en) | 1983-11-09 |
| GB2067353B (en) | 1984-07-04 |
| DE3046358C2 (sv) | 1987-02-26 |
| IE51076B1 (en) | 1986-10-01 |
| AU6531380A (en) | 1981-06-18 |
| IT8026642A0 (it) | 1980-12-12 |
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