FR2527385B1 - Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor - Google Patents

Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor

Info

Publication number
FR2527385B1
FR2527385B1 FR8305592A FR8305592A FR2527385B1 FR 2527385 B1 FR2527385 B1 FR 2527385B1 FR 8305592 A FR8305592 A FR 8305592A FR 8305592 A FR8305592 A FR 8305592A FR 2527385 B1 FR2527385 B1 FR 2527385B1
Authority
FR
France
Prior art keywords
transistor
liquid crystal
thin film
crystal display
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8305592A
Other languages
English (en)
Other versions
FR2527385A1 (fr
Inventor
Toshihiko Mano
Toshimoto Kodaira
Hiroyuki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57061440A external-priority patent/JPS58178564A/ja
Priority claimed from JP57064892A external-priority patent/JPS58182272A/ja
Priority claimed from JP57143786A external-priority patent/JPS5933877A/ja
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Publication of FR2527385A1 publication Critical patent/FR2527385A1/fr
Application granted granted Critical
Publication of FR2527385B1 publication Critical patent/FR2527385B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
FR8305592A 1982-04-13 1983-04-06 Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor Expired FR2527385B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP57061440A JPS58178564A (ja) 1982-04-13 1982-04-13 薄膜トランジスタ
JP57064892A JPS58182272A (ja) 1982-04-19 1982-04-19 薄膜トランジスタ
JP57143786A JPS5933877A (ja) 1982-08-19 1982-08-19 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
FR2527385A1 FR2527385A1 (fr) 1983-11-25
FR2527385B1 true FR2527385B1 (fr) 1987-05-22

Family

ID=27297500

Family Applications (2)

Application Number Title Priority Date Filing Date
FR8305592A Expired FR2527385B1 (fr) 1982-04-13 1983-04-06 Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
FR838320366A Expired - Lifetime FR2536194B1 (fr) 1982-04-13 1983-12-20 Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR838320366A Expired - Lifetime FR2536194B1 (fr) 1982-04-13 1983-12-20 Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor

Country Status (5)

Country Link
US (2) US5124768A (fr)
DE (2) DE3312743C2 (fr)
FR (2) FR2527385B1 (fr)
GB (1) GB2118365B (fr)
HK (1) HK88687A (fr)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US5468653A (en) * 1982-08-24 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
GB8406330D0 (en) * 1984-03-10 1984-04-11 Lucas Ind Plc Amorphous silicon field effect transistors
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
JPH0752776B2 (ja) * 1985-01-24 1995-06-05 シャープ株式会社 薄膜トランジスタおよびその製造法
JPS61228671A (ja) * 1985-04-02 1986-10-11 Hitachi Ltd 薄膜トランジスタ
WO1989002095A1 (fr) * 1987-08-27 1989-03-09 Hughes Aircraft Company Affichages a cristaux liquides mos fabriques avec des tranches de silicium traitees par implantation
US4839707A (en) * 1987-08-27 1989-06-13 Hughes Aircraft Company LCMOS displays fabricated with implant treated silicon wafers
US4849805A (en) * 1987-11-20 1989-07-18 General Electric Company Radiation hardened integrated circuit and method of making the same
JPH01217325A (ja) * 1988-02-25 1989-08-30 Sharp Corp 液晶表示装置
US5231039A (en) * 1988-02-25 1993-07-27 Sharp Kabushiki Kaisha Method of fabricating a liquid crystal display device
EP0377084B1 (fr) * 1988-10-03 1994-06-22 Kabushiki Kaisha Toshiba Transistor à effet de champ sur isolant et sa méthode de fabrication
JP3226223B2 (ja) * 1990-07-12 2001-11-05 株式会社東芝 薄膜トランジスタアレイ装置および液晶表示装置
SG63578A1 (en) * 1990-11-16 1999-03-30 Seiko Epson Corp Thin film semiconductor device process for fabricating the same and silicon film
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance
US5246870A (en) * 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
JP3556679B2 (ja) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
US5854494A (en) * 1991-02-16 1998-12-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5218214A (en) * 1991-05-17 1993-06-08 United Technologies Corporation Field oxide termination and gate oxide
US6975296B1 (en) * 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2894391B2 (ja) * 1991-09-20 1999-05-24 三菱電機株式会社 薄膜トランジスタおよびその製造方法
US5459347A (en) * 1991-12-30 1995-10-17 Nippon Telegraph And Telephone Corporation Method of making field-effect semiconductor device on SOI
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
KR940006273A (ko) * 1992-06-20 1994-03-23 오가 노리오 스태틱램(sram) 장치 및 그 제조방법
TW232751B (en) 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6323071B1 (en) * 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
JPH07175084A (ja) * 1993-12-21 1995-07-14 Hitachi Ltd 液晶表示装置及びその製造方法
JP3637069B2 (ja) * 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
FR2708142B1 (fr) * 1993-07-22 1995-08-18 Commissariat Energie Atomique Procédé de fabrication d'un transistor en technologie silicium sur isolant.
US5567966A (en) * 1993-09-29 1996-10-22 Texas Instruments Incorporated Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain
US5418391A (en) * 1994-03-31 1995-05-23 Vlsi Technology, Inc. Semiconductor-on-insulator integrated circuit with selectively thinned channel region
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
KR0136066B1 (ko) * 1994-05-06 1998-04-24 한민구 오프셋구조로 이루어지는 박막 트랜지스터의 제조방법
US6337232B1 (en) * 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
JP3256391B2 (ja) * 1994-11-28 2002-02-12 キヤノン株式会社 回路基板構造
US5567958A (en) * 1995-05-31 1996-10-22 Motorola, Inc. High-performance thin-film transistor and SRAM memory cell
US5736435A (en) * 1995-07-03 1998-04-07 Motorola, Inc. Process for fabricating a fully self-aligned soi mosfet
US5627097A (en) * 1995-07-03 1997-05-06 Motorola, Inc. Method for making CMOS device having reduced parasitic capacitance
US5742373A (en) * 1995-10-13 1998-04-21 Massachusetts Institute Of Technology Color microdisplays and methods of manufacturing same
JP3296975B2 (ja) * 1996-08-22 2002-07-02 シャープ株式会社 薄膜トランジスタ及びその製造方法
US5965861A (en) * 1997-02-07 1999-10-12 Ncr Corporation Method and apparatus for enhancing security in a self-service checkout terminal
US5982553A (en) 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
US5982004A (en) * 1997-06-20 1999-11-09 Hong Kong University Of Science & Technology Polysilicon devices and a method for fabrication thereof
US6088102A (en) 1997-10-31 2000-07-11 Silicon Light Machines Display apparatus including grating light-valve array and interferometric optical system
US6271808B1 (en) 1998-06-05 2001-08-07 Silicon Light Machines Stereo head mounted display using a single display device
US6101036A (en) 1998-06-23 2000-08-08 Silicon Light Machines Embossed diffraction grating alone and in combination with changeable image display
US6130770A (en) 1998-06-23 2000-10-10 Silicon Light Machines Electron gun activated grating light valve
US6215579B1 (en) 1998-06-24 2001-04-10 Silicon Light Machines Method and apparatus for modulating an incident light beam for forming a two-dimensional image
JP4401488B2 (ja) * 1998-09-01 2010-01-20 キヤノン株式会社 光電変換装置
FR2815143B1 (fr) * 2000-10-11 2005-11-18 Lg Philips Lcd Co Ltd Substrat reseau pour un affichage a cristaux liquides et methode de fabrication de celui-ci
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US6952040B2 (en) * 2001-06-29 2005-10-04 Intel Corporation Transistor structure and method of fabrication
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6785001B2 (en) 2001-08-21 2004-08-31 Silicon Light Machines, Inc. Method and apparatus for measuring wavelength jitter of light signal
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
TWI267145B (en) * 2001-11-30 2006-11-21 Semiconductor Energy Lab Manufacturing method for a semiconductor device
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
WO2003088280A1 (fr) * 2002-04-08 2003-10-23 Council Of Scientific And Industrial Research Procede de fabrication de poudre d'alliage d'aimant permanent de fer au neodyme et de bore
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6839479B2 (en) 2002-05-29 2005-01-04 Silicon Light Machines Corporation Optical switch
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US7046420B1 (en) 2003-02-28 2006-05-16 Silicon Light Machines Corporation MEM micro-structures and methods of making the same
JP2006041115A (ja) * 2004-07-26 2006-02-09 Seiko Epson Corp 半導体装置及びその製造方法、集積回路、電気光学装置、電子機器
US8127706B2 (en) * 2005-05-02 2012-03-06 Fairfield Industries Incorporated Deck configuration for ocean bottom seismometer launch platforms
JP2007081335A (ja) * 2005-09-16 2007-03-29 Renesas Technology Corp 半導体装置
CN101617354A (zh) 2006-12-12 2009-12-30 埃文斯和萨瑟兰计算机公司 用于校准单个调制器投影仪中的rgb光的系统和方法
US8358317B2 (en) 2008-05-23 2013-01-22 Evans & Sutherland Computer Corporation System and method for displaying a planar image on a curved surface
US8702248B1 (en) 2008-06-11 2014-04-22 Evans & Sutherland Computer Corporation Projection method for reducing interpixel gaps on a viewing surface
US8077378B1 (en) 2008-11-12 2011-12-13 Evans & Sutherland Computer Corporation Calibration system and method for light modulation device
JP5730529B2 (ja) 2009-10-21 2015-06-10 株式会社半導体エネルギー研究所 半導体装置
EP2513893A4 (fr) * 2009-12-18 2016-09-07 Semiconductor Energy Lab Dispositif d'affichage à cristaux liquides et dispositif électronique
SG10201500220TA (en) * 2010-01-15 2015-03-30 Semiconductor Energy Lab Semiconductor device and method for driving the same
KR102069496B1 (ko) 2010-01-24 2020-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9641826B1 (en) 2011-10-06 2017-05-02 Evans & Sutherland Computer Corporation System and method for displaying distant 3-D stereo on a dome surface
KR102109166B1 (ko) 2013-01-15 2020-05-12 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비하는 표시 기판
CN104779171A (zh) * 2015-05-05 2015-07-15 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (fr) * 1961-08-17
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
SE317137B (fr) * 1966-08-04 1969-11-10 Rca Corp
GB1267975A (en) * 1968-06-24 1972-03-22 Westinghouse Electric Corp Thin film electronic components on flexible substrates and the apparatus and process for producing same
US3669060A (en) * 1970-09-24 1972-06-13 Westinghouse Electric Corp Mask changing mechanism for use in the evaporation of thin film devices
DE2636873A1 (de) * 1976-08-17 1978-02-23 Siemens Ag Halbleiterbauelement mit zwei gekreuzten teildioden und mit transistorartigen eigenschaften
US4119992A (en) * 1977-04-28 1978-10-10 Rca Corp. Integrated circuit structure and method for making same
US4177473A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. Amorphous semiconductor member and method of making the same
JPS5522811A (en) * 1978-08-04 1980-02-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of semiconductor apparatus
US4199773A (en) * 1978-08-29 1980-04-22 Rca Corporation Insulated gate field effect silicon-on-sapphire transistor and method of making same
JPS5598868A (en) * 1979-01-23 1980-07-28 Sumitomo Electric Ind Ltd Insulated gate type field effect semiconductor device
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
US4317686A (en) * 1979-07-04 1982-03-02 National Research Development Corporation Method of manufacturing field-effect transistors by forming double insulative buried layers by ion-implantation
US4431271A (en) * 1979-09-06 1984-02-14 Canon Kabushiki Kaisha Display device with a thin film transistor and storage condenser
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
JPS5662356A (en) * 1979-10-26 1981-05-28 Seiko Instr & Electronics Ltd Logic integrated circuit device and its manufacturing method
IL61679A (en) * 1979-12-13 1984-11-30 Energy Conversion Devices Inc Thin film,field effect transistor
JPS5692573A (en) * 1979-12-26 1981-07-27 Citizen Watch Co Ltd Display panel
GB2140617B (en) * 1980-03-03 1985-06-19 Raytheon Co Methods of forming a field effect transistor
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
US4385937A (en) * 1980-05-20 1983-05-31 Tokyo Shibaura Denki Kabushiki Kaisha Regrowing selectively formed ion amorphosized regions by thermal gradient
JPS5710266A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Mis field effect semiconductor device
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
JPS5754370A (en) * 1980-09-19 1982-03-31 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type transistor
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
JPS57126131A (en) * 1981-01-28 1982-08-05 Toshiba Corp Manufacture of semiconductor device
JPS5812365A (ja) * 1981-07-15 1983-01-24 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタ及びその製造方法
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4399605A (en) * 1982-02-26 1983-08-23 International Business Machines Corporation Method of making dense complementary transistors
JPS5978557A (ja) * 1982-10-27 1984-05-07 Toshiba Corp 相補型ｍｏｓ半導体装置の製造方法
US5116771A (en) * 1989-03-20 1992-05-26 Massachusetts Institute Of Technology Thick contacts for ultra-thin silicon on insulator films
US5047356A (en) * 1990-02-16 1991-09-10 Hughes Aircraft Company High speed silicon-on-insulator device and process of fabricating same

Also Published As

Publication number Publication date
US5294555A (en) 1994-03-15
FR2536194A1 (fr) 1984-05-18
HK88687A (en) 1987-12-04
GB8309750D0 (en) 1983-05-18
DE3312743A1 (de) 1983-10-13
GB2118365A (en) 1983-10-26
FR2527385A1 (fr) 1983-11-25
US5124768A (en) 1992-06-23
GB2118365B (en) 1986-04-30
DE3348083C2 (fr) 1993-07-01
FR2536194B1 (fr) 1990-11-30
DE3312743C2 (de) 1986-12-18

Similar Documents

Publication Publication Date Title
FR2536194B1 (fr) Transistor a couche mince et panneau d&#39;affichage a cristaux liquides utilisant ce type de transistor
KR850004659A (ko) 강유전성 액정 전자 광학 장치 및 액정 표시 장치
EP0269123A3 (en) A thin film transistor array for liquid crystal display panel
FR2534052B1 (fr) Dispositif d&#39;affichage a cristaux liquides
FR2549268B1 (fr) Affichage a cristaux liquides
FR2524679B1 (fr) Procede d&#39;attaque d&#39;un panneau d&#39;affichage a cristaux liquides a matrice active
FR2485777B1 (fr) Element d&#39;affichage a cristaux liquides
FR2504543B1 (fr) Matiere de scellement pour panneau d&#39;affichage a cristaux liquides
FR2458858B1 (fr) Structure simplifiee de dispositif d&#39;affichage a cristaux liquides nematiques a helice a effet de champ
FR2479252B1 (fr) Composes a cristaux liquides du type cyclohexyl-dioxanne et dispositif electro-optique du type receveur-recu utilisant de tels composes
EP0592227A3 (fr) Fabrication d&#39;un transistor à couche mince et production d&#39;un dispositif d&#39;affichage à cristaux liquides.
KR890012392A (ko) 박막트랜지스터 및 그것을 사용한 액정표시장치
FR2496683B1 (fr) Nouveaux cristaux liquides tricycliques de type dioxanne et melanges et affichages electro-optiques les contenant
FR2466496B1 (fr) Esters formant des cristaux liquides et dispositifs electro-optiques utilisant lesdits esters
DE3069581D1 (en) Method of sealing plastic liquid crystal display panel
FR2582839B1 (fr) Dispositif d&#39;affichage a cristaux liquides
KR900013058A (ko) 액정 배향막 및 액정 표시소자
DE68926901D1 (de) Ferroelektrische Flüssigkristallmischung und Flüssigkristallanzeigevorrichtung
FR2532116B1 (fr) Transistor a couche mince et dispositif d&#39;affichage a cristaux liquides utilisant ce transistor
FR2572569B1 (fr) Dispositif d&#39;affichage a cristaux liquides
JPS5579415A (en) Liquid crystal display device and method of making same
FR2500843B1 (fr) Nouveaux cristaux liquides de type cyclohexylcyclohexyldioxanne et melanges et affichages electro-optiques les contenant
FR2530868B1 (fr) Transistor a couche mince et dispositif d&#39;affichage a cristaux liquides utilisant ce transistor
KR950025622U (ko) 액정표시소자의 씰 구조
KR940001654U (ko) 액정표시소자의 시일 구조