KR890012392A - 박막트랜지스터 및 그것을 사용한 액정표시장치 - Google Patents

박막트랜지스터 및 그것을 사용한 액정표시장치

Info

Publication number
KR890012392A
KR890012392A KR1019890000882A KR890000882A KR890012392A KR 890012392 A KR890012392 A KR 890012392A KR 1019890000882 A KR1019890000882 A KR 1019890000882A KR 890000882 A KR890000882 A KR 890000882A KR 890012392 A KR890012392 A KR 890012392A
Authority
KR
South Korea
Prior art keywords
liquid crystal
display device
thin film
crystal display
same
Prior art date
Application number
KR1019890000882A
Other languages
English (en)
Other versions
KR930008238B1 (ko
Inventor
야스오 타나카
하루오 마쓰마루
히데아끼 야마모또
토시히사 츠카다
켄 츠츠이
요시유키 카네코
Original Assignee
가부시기가이샤 히다찌세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사구쇼 filed Critical 가부시기가이샤 히다찌세이사구쇼
Publication of KR890012392A publication Critical patent/KR890012392A/ko
Application granted granted Critical
Publication of KR930008238B1 publication Critical patent/KR930008238B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1019890000882A 1988-01-29 1989-01-27 박막트랜지스터 및 그것을 사용한 액정표시장치 KR930008238B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17074 1988-01-29
JP1707488 1988-01-29

Publications (2)

Publication Number Publication Date
KR890012392A true KR890012392A (ko) 1989-08-26
KR930008238B1 KR930008238B1 (ko) 1993-08-27

Family

ID=11933834

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890000882A KR930008238B1 (ko) 1988-01-29 1989-01-27 박막트랜지스터 및 그것을 사용한 액정표시장치

Country Status (3)

Country Link
US (1) US4990981A (ko)
JP (1) JPH02830A (ko)
KR (1) KR930008238B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461484B1 (ko) * 2000-06-02 2004-12-14 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241575A (en) * 1989-12-21 1993-08-31 Minolta Camera Kabushiki Kaisha Solid-state image sensing device providing a logarithmically proportional output signal
JPH07112053B2 (ja) * 1990-04-13 1995-11-29 富士ゼロックス株式会社 薄膜スイッチング素子アレイ
CA2061796C (en) * 1991-03-28 2002-12-24 Kalluri R. Sarma High mobility integrated drivers for active matrix displays
JPH05219443A (ja) * 1992-02-05 1993-08-27 Minolta Camera Co Ltd 固体撮像装置
US5346833A (en) * 1993-04-05 1994-09-13 Industrial Technology Research Institute Simplified method of making active matrix liquid crystal display
DE69424759T2 (de) * 1993-12-28 2001-02-08 Applied Materials, Inc. Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren
US5650636A (en) 1994-06-02 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US5929464A (en) * 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
US5636041A (en) * 1995-05-24 1997-06-03 Dell Usa, L.P. Technique for increasing the visibility of an LCD panel during warm-up thereof
JP3256110B2 (ja) * 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
KR100198556B1 (ko) * 1995-11-22 1999-07-01 구자홍 박막트랜지스터의 구조 및 제조방법
KR100495794B1 (ko) 1997-10-17 2005-09-28 삼성전자주식회사 액정표시장치용박막트랜지스터
JP3425851B2 (ja) * 1997-06-30 2003-07-14 日本電気株式会社 液晶表示装置用薄膜トランジスタ
JP5042662B2 (ja) * 2007-02-21 2012-10-03 三菱電機株式会社 液晶表示装置及びその製造方法
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI521292B (zh) * 2007-07-20 2016-02-11 半導體能源研究所股份有限公司 液晶顯示裝置
JP5518382B2 (ja) * 2009-07-03 2014-06-11 株式会社ジャパンディスプレイ 液晶表示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017962A (ja) * 1983-07-11 1985-01-29 Canon Inc 薄膜トランジスタ
JPS613118A (ja) * 1984-06-16 1986-01-09 Canon Inc トランジスタ基板
JPS6190188A (ja) * 1984-10-09 1986-05-08 セイコーインスツルメンツ株式会社 薄膜表示装置
JPH0758793B2 (ja) * 1984-12-19 1995-06-21 松下電器産業株式会社 薄膜トランジスタの製造方法
JPS62152172A (ja) * 1985-12-25 1987-07-07 Matsushita Electric Ind Co Ltd 非晶質シリコン薄膜トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461484B1 (ko) * 2000-06-02 2004-12-14 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치

Also Published As

Publication number Publication date
JPH02830A (ja) 1990-01-05
US4990981A (en) 1991-02-05
KR930008238B1 (ko) 1993-08-27

Similar Documents

Publication Publication Date Title
NL194873B (nl) Dunnefilmtransistorenreeks en daarvan gebruikmakende vloeibare kristalweergeefinrichting.
KR890016409A (ko) 표시장치 및 액정 표시장치
DE69014842D1 (de) Flüssigkristall-Anzeigevorrichtung in Matrixform mit Dünnschichttransistoren.
DE69127866D1 (de) Flüssigkristallanzeigevorrichtung
DE69119389D1 (de) Flüssigkristall-Anzeigevorrichtung
DE69127393D1 (de) Flüssigkristallanzeigevorrichtung
DE68927797D1 (de) Projektions-Flüssigkristall-Anzeigevorrichtung
DE69215635D1 (de) Flüssigkristall-Anzeigevorrichtung
DE69215461D1 (de) Flüssigkristall-Anzeigevorrichtung
DE69121616D1 (de) Flüssigkristall-Anzeigevorrichtung
KR850004659A (ko) 강유전성 액정 전자 광학 장치 및 액정 표시 장치
DE69122572D1 (de) Hinterbeleuchtete Flüssigkristallanzeigevorrichtung
DE69121138D1 (de) Flüssigkristallanzeigeeinrichtung
KR890012392A (ko) 박막트랜지스터 및 그것을 사용한 액정표시장치
DE69432654D1 (de) Flüssigkristall-Anzeige und -vorrichtung
EP0341003A3 (en) Thin film semiconductor device and liquid crystal display apparatus using thereof
DE69300154D1 (de) Dünnfilmtransistor und Flüssigkristallanzeigevorrichtung mit aktiver Matrix.
DE69210638D1 (de) Flüssigkristallanzeigevorrichtung
DE69127169D1 (de) Flüssigkristall-Anzeigevorrichtung
DE68927332D1 (de) Flüssigkristall-Anzeigevorrichtung
DE69531284D1 (de) Flüssigkristall-anzeigevorrichtung und verzögerungsfolie
DE69131902D1 (de) Flüssigkristall-anzeigevorrichtung
DE69116967D1 (de) Flüssigkristallanzeigevorrichtung
DE69215171D1 (de) Flüssigkristallanzeigevorrichtung
DE69633546D1 (de) Flüssigkristallanzeigevorrichtung und verzögerungsfilm

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080822

Year of fee payment: 16

EXPY Expiration of term