JP5518382B2 - 液晶表示装置 - Google Patents
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- JP5518382B2 JP5518382B2 JP2009159169A JP2009159169A JP5518382B2 JP 5518382 B2 JP5518382 B2 JP 5518382B2 JP 2009159169 A JP2009159169 A JP 2009159169A JP 2009159169 A JP2009159169 A JP 2009159169A JP 5518382 B2 JP5518382 B2 JP 5518382B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 37
- 239000010408 film Substances 0.000 claims description 104
- 239000004065 semiconductor Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 31
- 230000005684 electric field Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
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- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
以下、本発明の第1実施形態について、図面を参照しながら説明する。本実施形態に係る表示装置は、IPS(In-Plane Switching)方式の液晶表示装置であって、走査信号線(ゲート信号線)、映像信号線(ドレイン信号線)、薄膜トランジスタ、画素電極、及び対向電極が配置されたTFT基板と、当該TFT基板と対向し、カラーフィルタが設けられたカラーフィルタ基板と、両基板に挟まれた領域に封入された液晶材料と、当該TFT基板とカラーフィルタ基板に光を提供するバックライトとを含んで構成される。このTFT基板は、ガラス等によって形成された透明基板上に、薄膜トランジスタがマトリクス状に配置されている。
上記の第1実施形態では、図2で示すように、ゲート電極GTが、映像信号線DLの図中右側に離れて形成されて、ドレイン電極DTは、図中右側に映像信号線DLから突出して形成される。映像信号線DLから突出したドレイン電極DTは、ゲート電極GTに沿って延伸するように屈曲して、ゲート電極GTの延設部分を経て半導体膜ASの第1の領域に接続する。しかし、第2実施形態では、ゲート電極GTと映像信号線DLとが平面的に重複する部分を有し、映像信号線DLがドレイン電極DTとして半導体膜ASの第1の領域と接続する点で、第1実施形態とは異なっている。以下において、第2実施形態を説明するが、第1実施形態とほぼ同様となる点については説明を省略する。
Claims (6)
- 透明基板の上側に敷設されて、走査信号が供給されるゲート信号線と、
前記ゲート信号線から、前記ゲート信号線が敷設される方向とは異なる方向に突出して形成されるゲート電極と、
前記ゲート電極の上側に積層されるソース電極及びドレイン電極と、
前記ゲート電極の上側に積層されて、前記ゲート電極が発生させる電界により前記ソース電極及び前記ドレイン電極間の電流を制御する半導体膜と、
前記ゲート電極と前記半導体膜の間にて、前記半導体膜の下面に接して積層されるゲート絶縁膜と、を含み、
前記半導体膜は、前記ゲート電極と平面的に重複する第1の領域と、前記ゲート電極と平面的に重複しない第2の領域とを有する平面的形状で形成され、
前記ソース電極および前記ドレイン電極は、前記ゲート絶縁膜に接するとともに、前記半導体膜の側方から乗り上げて積層され、
前記ゲート電極は、前記第1の領域と平面的に重複する部分を基準として、前記半導体膜と平面的に重複せずに前記ゲート信号線から離れる側に延設される延設部分を有し、
前記ソース電極と前記ドレイン電極は、前記第2の領域において前記半導体膜と接続せず、前記延設部分と平面的に重複する領域から前記第1の領域に延在して前記半導体膜に接続される、
ことを特徴とする薄膜トランジスタを有する液晶表示装置。 - 請求項1に記載された液晶表示装置であって、
前記ソース電極および前記ドレイン電極は、前記ゲート電極に沿うように延伸しつつ、前記延設部分および前記第1の領域と平面的に重複する、
ことを特徴とする液晶表示装置。 - 請求項2に記載された液晶表示装置であって、
前記ゲート電極は、X方向に敷設されて走査信号が供給される前記ゲート信号線から、該X方向に対して垂直となるY方向に突出して形成され、
前記延設部分は、前記ゲート電極が突出する方向に、前記半導体膜の前記第1の領域と重複する部分からさらに延設され、
前記ソース電極および前記ドレイン電極は、前記ゲート電極の端部よりも前記ゲート電極が突出する方向に離れた位置から、前記ゲート電極の側に延伸して、前記延設部分及び前記第1の領域と平面的に重複する、
ことを特徴とする液晶表示装置。 - 請求項2に記載された液晶表示装置であって、
X方向に敷設されて走査信号が供給される前記ゲート信号線と、
前記X方向に対して垂直となるY方向に敷設されて映像信号が供給されるドレイン信号線と、を前記液晶表示装置は含み、
前記ドレイン電極は、前記ドレイン信号線の一部であって、該ドレイン信号線は、前記ゲート電極および前記半導体膜と平面的に重複する部分を有して形成され、
前記半導体膜の前記第1の領域は、前記ゲート電極の延設部分、および、前記ゲート電極において前記第1の領域と平面的に重複する部分を基準として前記ゲート信号線に近づく側に延設される部分とによって、前記Y方向となる両側の方向からはさまれ、
前記ドレイン信号線は、前記Y方向の両側から前記半導体膜の第1の領域に延伸して、該ドレイン信号線の一部が前記半導体膜に接続される、
ことを特徴とする液晶表示装置。 - 請求項1に記載された液晶表示装置であって、
前記透明基板の下側にはバックライトが配置されて、
前記第1の領域は、前記ゲート電極によって前記バックライトの光から遮光され、
前記ソース電極および前記ドレイン電極と、前記ゲート電極との間にかけられる電位差によって電界がかかる領域が、前記バックライトからの光から遮光されない前記第2の領域から離れて位置する、
ことを特徴とする液晶表示装置。 - 請求項1に記載された液晶表示装置であって、
前記ソース電極と前記ドレイン電極は、前記第2の領域と平面的に重複するのを避けて、前記第1の領域において前記半導体膜と接続する、
ことを特徴とする液晶表示装置。
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JP2009159169A JP5518382B2 (ja) | 2009-07-03 | 2009-07-03 | 液晶表示装置 |
US12/828,748 US8384836B2 (en) | 2009-07-03 | 2010-07-01 | Liquid crystal display device |
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JP2009159169A JP5518382B2 (ja) | 2009-07-03 | 2009-07-03 | 液晶表示装置 |
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JP2011014797A JP2011014797A (ja) | 2011-01-20 |
JP5518382B2 true JP5518382B2 (ja) | 2014-06-11 |
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JP5571887B2 (ja) * | 2008-08-19 | 2014-08-13 | アルティアム サービシズ リミテッド エルエルシー | 液晶表示装置及びその製造方法 |
KR102060802B1 (ko) * | 2013-06-11 | 2019-12-31 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN104241297B (zh) * | 2014-08-25 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示面板 |
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US4990981A (en) * | 1988-01-29 | 1991-02-05 | Hitachi, Ltd. | Thin film transistor and a liquid crystal display device using same |
JPH05313192A (ja) | 1992-05-12 | 1993-11-26 | Toshiba Corp | 液晶表示装置およびその製造方法 |
US5614731A (en) * | 1993-03-15 | 1997-03-25 | Kabushiki Kaisha Toshiba | Thin-film transistor element having a structure promoting reduction of light-induced leakage current |
US5471330A (en) * | 1993-07-29 | 1995-11-28 | Honeywell Inc. | Polysilicon pixel electrode |
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JP4248306B2 (ja) * | 2002-06-17 | 2009-04-02 | シャープ株式会社 | 液晶表示装置 |
TWI256732B (en) * | 2002-08-30 | 2006-06-11 | Sharp Kk | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus |
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