JPS5692573A - Display panel - Google Patents
Display panelInfo
- Publication number
- JPS5692573A JPS5692573A JP16993579A JP16993579A JPS5692573A JP S5692573 A JPS5692573 A JP S5692573A JP 16993579 A JP16993579 A JP 16993579A JP 16993579 A JP16993579 A JP 16993579A JP S5692573 A JPS5692573 A JP S5692573A
- Authority
- JP
- Japan
- Prior art keywords
- display panel
- panel
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16993579A JPS5692573A (en) | 1979-12-26 | 1979-12-26 | Display panel |
GB8041342A GB2070857B (en) | 1979-12-26 | 1980-12-29 | Method of forming display panel substrates having switching elements provided thereon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16993579A JPS5692573A (en) | 1979-12-26 | 1979-12-26 | Display panel |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5692573A true JPS5692573A (en) | 1981-07-27 |
Family
ID=15895640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16993579A Pending JPS5692573A (en) | 1979-12-26 | 1979-12-26 | Display panel |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5692573A (en) |
GB (1) | GB2070857B (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276255A (en) * | 1985-05-30 | 1986-12-06 | Fujitsu Ltd | Semiconductor device |
JPS6311989A (en) * | 1987-04-03 | 1988-01-19 | セイコーエプソン株式会社 | Electro-optical display unit |
JPS6390859A (en) * | 1986-10-06 | 1988-04-21 | Nec Corp | Thin film transistor and manufacture thereof |
US5021774A (en) * | 1987-01-09 | 1991-06-04 | Hitachi, Ltd. | Method and circuit for scanning capacitive loads |
JP2001134245A (en) * | 1999-11-10 | 2001-05-18 | Sony Corp | Liquid crystal display device |
JP2002507007A (en) * | 1998-03-10 | 2002-03-05 | トムソン−エルセデ | Display method on a matrix display screen that is alternately scanned and controlled in a group of adjacent columns |
JP2005257710A (en) * | 2004-03-09 | 2005-09-22 | Hitachi Displays Ltd | Display apparatus |
KR100541059B1 (en) * | 2001-10-03 | 2006-01-10 | 샤프 가부시키가이샤 | Active matrix display device and data line switching circuit, switching section drive circuit, and scanning line drive circuit thereof |
US7683876B2 (en) | 2004-09-14 | 2010-03-23 | Samsung Electronics Co., Ltd. | Time division driving method and source driver for flat panel display |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2524714B1 (en) * | 1982-04-01 | 1986-05-02 | Suwa Seikosha Kk | THIN FILM TRANSISTOR |
US6294796B1 (en) * | 1982-04-13 | 2001-09-25 | Seiko Epson Corporation | Thin film transistors and active matrices including same |
US5698864A (en) * | 1982-04-13 | 1997-12-16 | Seiko Epson Corporation | Method of manufacturing a liquid crystal device having field effect transistors |
US5736751A (en) * | 1982-04-13 | 1998-04-07 | Seiko Epson Corporation | Field effect transistor having thick source and drain regions |
FR2527385B1 (en) * | 1982-04-13 | 1987-05-22 | Suwa Seikosha Kk | THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL USING THIS TYPE OF TRANSISTOR |
FR2530868B1 (en) * | 1982-04-30 | 1988-10-28 | Suwa Seikosha Kk | THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME |
US4922240A (en) * | 1987-12-29 | 1990-05-01 | North American Philips Corp. | Thin film active matrix and addressing circuitry therefor |
US4888632A (en) * | 1988-01-04 | 1989-12-19 | International Business Machines Corporation | Easily manufacturable thin film transistor structures |
JP2653099B2 (en) | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | Active matrix panel, projection display and viewfinder |
US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
TW209895B (en) | 1990-11-26 | 1993-07-21 | Semiconductor Energy Res Co Ltd | |
JPH07302912A (en) | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
TW540020B (en) | 2001-06-06 | 2003-07-01 | Semiconductor Energy Lab | Image display device and driving method thereof |
JP2011119397A (en) * | 2009-12-02 | 2011-06-16 | Canon Inc | Semiconductor device and method of manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152894A (en) * | 1978-05-23 | 1979-12-01 | Seiko Epson Corp | Liquid crystal display unit |
-
1979
- 1979-12-26 JP JP16993579A patent/JPS5692573A/en active Pending
-
1980
- 1980-12-29 GB GB8041342A patent/GB2070857B/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152894A (en) * | 1978-05-23 | 1979-12-01 | Seiko Epson Corp | Liquid crystal display unit |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276255A (en) * | 1985-05-30 | 1986-12-06 | Fujitsu Ltd | Semiconductor device |
JPS6390859A (en) * | 1986-10-06 | 1988-04-21 | Nec Corp | Thin film transistor and manufacture thereof |
US5021774A (en) * | 1987-01-09 | 1991-06-04 | Hitachi, Ltd. | Method and circuit for scanning capacitive loads |
JPS6311989A (en) * | 1987-04-03 | 1988-01-19 | セイコーエプソン株式会社 | Electro-optical display unit |
JPH059794B2 (en) * | 1987-04-03 | 1993-02-05 | Seiko Epson Corp | |
JP2002507007A (en) * | 1998-03-10 | 2002-03-05 | トムソン−エルセデ | Display method on a matrix display screen that is alternately scanned and controlled in a group of adjacent columns |
JP4727038B2 (en) * | 1998-03-10 | 2011-07-20 | タレス アヴィオニクス エルセデ | Display method on matrix display screen controlled alternately scanning in adjacent column group |
JP2001134245A (en) * | 1999-11-10 | 2001-05-18 | Sony Corp | Liquid crystal display device |
KR100541059B1 (en) * | 2001-10-03 | 2006-01-10 | 샤프 가부시키가이샤 | Active matrix display device and data line switching circuit, switching section drive circuit, and scanning line drive circuit thereof |
JP2005257710A (en) * | 2004-03-09 | 2005-09-22 | Hitachi Displays Ltd | Display apparatus |
JP4694134B2 (en) * | 2004-03-09 | 2011-06-08 | 株式会社 日立ディスプレイズ | Display device |
US7683876B2 (en) | 2004-09-14 | 2010-03-23 | Samsung Electronics Co., Ltd. | Time division driving method and source driver for flat panel display |
Also Published As
Publication number | Publication date |
---|---|
GB2070857B (en) | 1983-12-21 |
GB2070857A (en) | 1981-09-09 |
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