CN104779171A - 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置 - Google Patents

低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置 Download PDF

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CN104779171A
CN104779171A CN201510223672.3A CN201510223672A CN104779171A CN 104779171 A CN104779171 A CN 104779171A CN 201510223672 A CN201510223672 A CN 201510223672A CN 104779171 A CN104779171 A CN 104779171A
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drain
film transistor
active layer
contact region
source electrode
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李兴华
暴军萍
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种低温多晶硅薄膜晶体管及其制作方法、一种阵列基板和一种显示装置。所述低温多晶硅薄膜晶体管包括有源层、源极和漏极，所述有源层包括源极接触区、漏极接触区以及位于所述源极接触区和所述漏极接触区之间的沟道区，所述源极设置在所述源极接触区上方并通过源极过孔与所述源极接触区相连，所述漏极设置在所述漏极接触区的上方并通过漏极过孔与所述漏极接触区相连，所述源极接触区的厚度和所述漏极接触区的厚度均大于所述沟道区的厚度。本发明能够使得源极和漏极与有源层具有较大的接触面积，从而提高了低温多晶硅薄膜晶体管的可靠性和良率。

Description

低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置
技术领域
本发明涉及显示技术领域，具体涉及一种低温多晶硅薄膜晶体管、一种低温多晶硅薄膜晶体管的制作方法、一种包括所述低温多晶硅薄膜晶体管的阵列基板和一种包括所述阵列基板的显示装置。
背景技术
低温多晶硅(low temperature poly-silicon，LTPS)薄膜晶体管液晶显示器有别于传统的非晶硅薄膜晶体管液晶显示器，其电子迁移率较高，可有效减小薄膜晶体管器件的面积，从而达到提高开口率，并且在增进显示器亮度的同时还可以降低整体的功耗。另外，较高的电子迁移率可以将部分驱动电路集成在玻璃基板上，减少了驱动电路成本，还可以大幅提升液晶显示面板的可靠性，从而使得面板的制造成本大幅降低。因此，低温多晶硅薄膜晶体管液晶显示器逐步成为研究的热点。
如图1所示的是现有的低温多晶硅薄膜晶体管的结构示意图，其中源极12、漏极13均通过过孔与有源层11相接触，这样可以减小漏极与阵列基板上的像素电极之间的距离，从而便于像素电极与漏极的连接。但是，在刻蚀过孔时容易发生过刻的现象，导致形成源极12、漏极13后，源极12、漏极13和有源层11的接触不良(如图2所示)，降低了薄膜晶体管的可靠性和良率。
发明内容
本发明的目的在于提供一种低温多晶硅薄膜晶体管、一种低温多晶硅薄膜晶体管的制作方法、一种包括所述低温多晶硅薄膜晶体管的阵列基板和一种包括所述阵列基板的显示装置，以增大低温多晶硅薄膜晶体管的源极、漏极与有源层之间的接触面积，提高薄膜晶体管的可靠性和良率。
本发明提供一种低温多晶硅薄膜晶体管，包括有源层、源极和漏极，所述有源层包括源极接触区、漏极接触区以及位于所述源极接触区和所述漏极接触区之间的沟道区，所述源极设置在所述源极接触区上方并通过源极过孔与所述源极接触区相连，所述漏极设置在所述漏极接触区的上方并通过漏极过孔与所述漏极接触区相连，所述源极接触区的厚度和所述漏极接触区的厚度均大于所述沟道区的厚度。
优选地，所述源极接触区和所述源极之间以及所述漏极接触区和所述漏极之间分别设置有欧姆接触层。
优选地，所述源极接触区和所述漏极接触区的厚度相同。
优选地，所述低温多晶硅薄膜晶体管还包括栅极和设置在所述栅极与所述有源层之间的栅极绝缘层，所述栅极绝缘层设置在所述有源层上方。
优选地，所述低温多晶硅薄膜晶体管还包括设置在所述栅极上方的层间绝缘层，所述源极和所述漏极设置在所述层间绝缘层上，所述源极过孔和所述漏极过孔均同时贯穿所述栅极绝缘层和所述层间绝缘层。
优选地，所述栅极绝缘层包括设置在所述有源层上方的硅的氧化物层和设置在所述硅的氧化物层上方的硅的氮化物层；和/或
所述层间绝缘层包括设置在所述栅极上方的硅的氧化物层和硅的氮化物层。
相应地，本发明还提供一种低温多晶硅薄膜晶体管的制作方法，包括：
形成有源层；其中，该有源层包括源极接触区、漏极接触区和位于所述源极接触区与所述漏极接触区之间的沟道区，所述源极接触区和漏极接触区的厚度均大于所述沟道区的厚度；
形成源极和漏极，且所述源极通过源极过孔与所述源极接触区相连，所述漏极通孔漏极过孔与所述漏极接触区相连。
优选地，所述形成有源层的步骤包括：
形成第一非晶硅材料层；
在所述第一非晶硅材料层上形成光刻胶层，通过构图工艺将所述第一非晶硅材料层位于第一区域和第二区域的部分保留，其他部分去除，以形成第一中间图形，其中，所述第一区域对应于所述源极接触区的位置，所述第二区域对应于所述漏极接触区的位置；
形成第二非晶硅材料层；
在所述第二非晶硅材料层上形成光刻胶层，通过构图工艺将所述第二非晶硅材料层的分别位于第一区域、第二区域以及第三区域的部分保留，其他部分去除，以形成第二中间图形，其中，所述第三区域对应于所述沟道区的位置；
对所述第一中间图形和所述第二中间图形进行退火，形成所述有源层。
优选地，所述制作方法还包括在所述形成有源层的步骤之后进行的：
对所述源极接触区和所述漏极接触区进行离子掺杂，以形成欧姆接触层。
优选地，所述制作方法还包括在所述形成有源层的步骤和所述形成源极和漏极的步骤之间进行的：
形成栅极绝缘层；
在所述栅极绝缘层上形成栅极。
优选地，所述制作方法还包括在所述在栅极绝缘层上形成栅极的步骤与所述形成源极和漏极的步骤之间进行的：
形成层间绝缘层；
在对应于源极接触区的位置形成同时贯穿所述栅极绝缘层和所述层间绝缘层的源极过孔，在对应于漏极接触区的位置形成同时贯穿所述栅极绝缘层和所述层间绝缘层的漏极过孔。
优选地，形成栅极绝缘层的步骤包括：
在所述有源层上方依次形成硅的氧化物层和硅的氮化物层；和/或
形成层间绝缘层的步骤包括：
在所述栅极上方依次形成硅的氧化物层和硅的氮化物层。
相应地，本发明还提供一种阵列基板，所述阵列基板包括本发明提供的上述低温多晶硅薄膜晶体管。
相应地，本发明还提供一种显示装置，所述显示装置包括本发明提供的上述阵列基板。
在本发明中，由于源极接触区和漏极接触区的厚度较大，即使在刻蚀过孔时出现过刻而在源极接触区和漏极接触区形成一定的凹陷，也会使得源极和漏极与有源层具有较大的接触面积，从而提高了低温多晶硅薄膜晶体管的可靠性和良率，同时减小了接触电阻，降低了开启电压和驱动电路的功耗；并且，在相对较薄的沟道区，多晶硅的晶粒容易横向生长，从而使得晶粒横向尺寸较大，使薄膜晶体管的有源层具有各向异性，进而使得薄膜晶体管的有源层在该薄膜晶体管打开时具有较好的导电性能。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是现有技术中低温多晶硅薄膜晶体管的结构示意图；
图2是图1中的低温多晶硅薄膜晶体管出现过刻时I部分的放大示意图；
图3是本发明的实施例中低温多晶硅薄膜晶体管的结构示意图；
图4是图3中的低温多晶硅薄膜晶体管出现过刻时I’部分的放大示意图；
图5是本发明的实施例中低温多晶硅薄膜晶体管的制作方法流程示意图；
图6a-图6e是本发明的实施例中制作有源层的流程示意图；
图7是本发明的实施例中阵列基板的结构示意图。
其中，附图标记为：10、基底；11、有源层；11a、源极接触区；11b、漏极接触区；11c、沟道区；12、源极；13、漏极；14、栅极；15、栅极绝缘层；16、层间绝缘层；17、缓冲层；21、第一非晶硅材料层；22、第一中间图形；23、第二非晶硅材料层；24、第二中间图形；30、平坦化层；40、像素电极。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的第一个方面，提供一种低温多晶硅薄膜晶体管，如图3所示，所述低温多晶硅薄膜晶体管包括有源层11、源极12和漏极13，有源层11包括源极接触区11a、漏极接触区11b和位于源极接触区11a和漏极接触区11b之间的沟道区11c，源极12设置在源极接触区11a的上方并通过源极过孔与源极接触区11a相连，漏极13设置在漏极接触区11b的上方并通过漏极过孔与漏极接触区11b相连，其中，源极接触区11a的厚度和漏极接触区11b的厚度均大于沟道区11c的厚度。
和现有技术相比，由于本发明的源极接触区11a和漏极接触区11b的厚度较大，即使在刻蚀过孔时出现过刻而在源极接触区11a和漏极接触区11b形成一定的凹陷，也会使得源极和漏极与有源层具有较大的接触面积(如图4所示)，从而提高了低温多晶硅薄膜晶体管的可靠性和良率，同时减小了接触电阻，降低了开启电压和驱动电路的功耗；并且，在相对较薄的沟道区，多晶硅的晶粒容易横向生长，从而使得晶粒横向尺寸较大，使薄膜晶体管的有源层具有各向异性，进而使得薄膜晶体管的有源层在该薄膜晶体管打开时具有较好的导电性能。
为了使得源极12和漏极13与有源层11之间可以更好地接触，进一步地，源极接触区11a和源极12之间以及漏极接触区11b和漏极之间可以分别设置有欧姆接触层，减小源极12和漏极13与有源层11之间的接触电阻。
为了便于有源层的制备，在本发明中，源极接触区11a和漏极接触区11b的厚度相同。
具体地，如图3所示，所述低温多晶硅薄膜晶体管还包括栅极14和设置在栅极14与有源层11之间的栅极绝缘层15，栅极绝缘层15设置在有源层11的上方，从而将栅极14和有源层11绝缘间隔开。
进一步地，所述低温多晶硅薄膜晶体管还包括设置在栅极14上方的层间绝缘层16，源极12和漏极13设置在层间绝缘层16上，所述源极过孔和所述漏极过孔均同时贯穿栅极绝缘层15和层间绝缘层16。
本发明对栅极绝缘层15和层间绝缘层16的材料不作限制，例如可以为硅的氧化物层(SiOx)、硅的氮化物层(SiNx)、硅的氮氧化物层(SiON)等，优选地，栅极绝缘层15包括设置在有源层上方的硅的氧化物层和设置在硅的氧化物层上的硅的氮化物层；和/或，层间绝缘层16包括设置在栅极上方的硅的氧化物层和硅的氮化物层。硅的氧化物层直接和有源层或栅极接触，可以改善有源层或栅极的界面特性，保证有源层或栅极的导电性能；硅的氮化物的介电常数较大，具有良好的绝缘效果。
可以理解的是，如图3所示，有源层11和基底10之间还可以设置有缓冲层17，该缓冲层由绝缘材料制成，例如，缓冲层的材料可以包括硅的氧化物(SiOx)、硅的氮化物(SiNx)、硅的氮氧化物(SiON)、氧化铝(Al2O3)等中的任意一种形成的单层膜或任意多种形成的复合膜层。由于在制备低温多晶硅薄膜晶体管的有源层时，需要利用激光退火使得非晶硅转变为多晶硅，缓冲层的设置可以减小高温对基底10的影响。
作为本发明的第二个方面，提供一种低温多晶硅薄膜晶体管的制作方法，如图5所示，所述制作方法包括：
S10、形成有源层；其中，该有源层包括源极接触区、漏极接触区和位于所述源极接触区与所述漏极接触区之间的沟道区，所述源极接触区和漏极接触区的厚度均大于所述沟道区的厚度；
S20、形成源极和漏极，且所述源极通过源极过孔与所述源极接触区相连，所述漏极通孔漏极过孔与所述漏极接触区相连。
如上文中所述，在步骤S10之前，可以首先在基底10上形成缓冲层17。
具体地，所述步骤S10包括：
S10a、形成第一非晶硅材料层21(如图6a所示)；
S10b、在所述第一非晶硅材料层上形成光刻胶层，通过构图工艺将所述第一非晶硅材料层位于第一区域和第二区域的部分保留，其他部分去除，从而形成第一中间图形22(如图6b所示)，其中，所述第一区域对应于所述源极接触区的位置，所述第二区域对应于所述漏极接触区的位置；
S10c、形成第二非晶硅材料层23(如图6c所示)；
S10d、在所述第二非晶硅材料层上形成光刻胶层，通过构图工艺将所述第二非晶硅材料层的分别位于第一区域、第二区域以及第三区域的部分保留，其他部分去除，以形成第二中间图形24(如图6d所示)，其中，第三区域对应于所述沟道区的位置；
S10e、对第一中间图形22和第二中间图形24进行退火，形成有源层11(如图6e所示)，有源层11的位于第一区域的部分为源极接触区，位于第二区域的部分为漏级接触区，位于第三区域的部分为沟道区。退火时可以采用准分子激光退火工艺。
进一步地，所述制作方法还包括在所述步骤S20之后进行的：
S30、对所述源极接触区和所述漏极接触区进行离子掺杂，以形成欧姆接触层。
如图5所示，所述制作方法还包括在所述步骤S10和所述步骤S20之间进行的：
S11、形成栅极绝缘层；
S12、在所述栅极绝缘层上形成栅极。具体地，可以在栅极绝缘层上形成栅极材料层，然后通过光刻构图工艺形成包括栅极的图形，其中，形成栅极的材料可以包括钼(Mo)、钼铌合金(MoNb)、铝(Al)、钛(Ti)、铜(Cu)中的任意一种或多种。
所述制作方法还包括在所述步骤S12和步骤S20之间进行的：
S13、形成层间绝缘层；
S14、在对应于源极接触区的位置形成同时贯穿所述栅极绝缘层和所述层间绝缘层的源极过孔，在对应于漏极接触区的位置形成同时贯穿所述栅极绝缘层和所述层间绝缘层的漏极过孔，以使得所述源极通过所述源极过孔与所述源极接触区相连，所述漏极通过所述漏极过孔与所述漏极接触区相连。所述源极过孔和所述漏极过过孔可以通过光刻工艺形成。
其中，形成栅极绝缘层的步骤包括：在所述有源层上方依次形成硅的氧化物层和硅的氮化物层；和/或
形成层间绝缘层的步骤包括：
在所述栅极上方依次形成硅的氧化物层和硅的氮化物层。
作为本发明的第三个方面，提供一种阵列基板，所述阵列基板包括本发明提供的上述低温多晶硅薄膜晶体管。
如图7所示，阵列基板还包括设置在低温多晶体硅薄膜晶体管上的平坦化层30和设置在平坦化层30上的像素电极40，平坦化层30上设置有像素电极过孔，像素电极40通过所述像素电极过孔与低温多晶硅薄膜晶体管的漏极13相连。
作为本发明的第四个方面，提供一种显示装置，包括本发明提供的上述阵列基板。所述显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
由于本发明提供的低温多晶硅薄膜晶体管的源极和漏极与有源层接触面积较大，沟道区的多晶硅更易横向生长，从而提高了低温多晶硅薄膜晶体管的电学性能和均一性，进而提高了阵列基板和显示装置的可靠性；同时由于源极、漏极与有源层之间的接触电阻减小，使得开启电压和驱动电路的功耗降低，从而降低了显示装置的功耗。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (14)

1.一种低温多晶硅薄膜晶体管，包括有源层、源极和漏极，所述有源层包括源极接触区、漏极接触区以及位于所述源极接触区和所述漏极接触区之间的沟道区，所述源极设置在所述源极接触区上方并通过源极过孔与所述源极接触区相连，所述漏极设置在所述漏极接触区的上方并通过漏极过孔与所述漏极接触区相连，其特征在于，所述源极接触区的厚度和所述漏极接触区的厚度均大于所述沟道区的厚度。
2.根据权利要求1所述的低温多晶硅薄膜晶体管，其特征在于，所述源极接触区和所述源极之间以及所述漏极接触区和所述漏极之间分别设置有欧姆接触层。
3.根据权利要求1所述的低温多晶硅薄膜晶体管，其特征在于，所述源极接触区和所述漏极接触区的厚度相同。
4.根据权利要求1至3中任意一项所述的低温多晶硅薄膜晶体管，其特征在于，所述低温多晶硅薄膜晶体管还包括栅极和设置在所述栅极与所述有源层之间的栅极绝缘层，所述栅极绝缘层设置在所述有源层上方。
5.根据权利要求4所述的低温多晶硅薄膜晶体管，其特征在于，所述低温多晶硅薄膜晶体管还包括设置在所述栅极上方的层间绝缘层，所述源极和所述漏极设置在所述层间绝缘层上，所述源极过孔和所述漏极过孔均同时贯穿所述栅极绝缘层和所述层间绝缘层。
6.根据权利要求5所述的低温多晶硅薄膜晶体管，其特征在于，所述栅极绝缘层包括设置在所述有源层上方的硅的氧化物层和设置在所述硅的氧化物层上方的硅的氮化物层；和/或
所述层间绝缘层包括设置在所述栅极上方的硅的氧化物层和硅的氮化物层。
7.一种低温多晶硅薄膜晶体管的制作方法，其特征在于，包括：
形成有源层；其中，该有源层包括源极接触区、漏极接触区和位于所述源极接触区与所述漏极接触区之间的沟道区，所述源极接触区和漏极接触区的厚度均大于所述沟道区的厚度；
形成源极和漏极，且所述源极通过源极过孔与所述源极接触区相连，所述漏极通孔漏极过孔与所述漏极接触区相连。
8.根据权利要求7所述的制作方法，其特征在于，所述形成有源层的步骤包括：
形成第一非晶硅材料层；
在所述第一非晶硅材料层上形成光刻胶层，通过构图工艺将所述第一非晶硅材料层位于第一区域和第二区域的部分保留，其他部分去除，以形成第一中间图形，其中，所述第一区域对应于所述源极接触区的位置，所述第二区域对应于所述漏极接触区的位置；
形成第二非晶硅材料层；
在所述第二非晶硅材料层上形成光刻胶层，通过构图工艺将所述第二非晶硅材料层的分别位于第一区域、第二区域以及第三区域的部分保留，其他部分去除，以形成第二中间图形，其中，所述第三区域对应于所述沟道区的位置；
对所述第一中间图形和所述第二中间图形进行退火，形成所述有源层。
9.根据权利要求7所述的制作方法，其特征在于，所述制作方法还包括在所述形成有源层的步骤之后进行的：
对所述源极接触区和所述漏极接触区进行离子掺杂，以形成欧姆接触层。
10.根据权利要求7所述的制作方法，其特征在于，所述制作方法还包括在所述形成有源层的步骤和所述形成源极和漏极的步骤之间进行的：
形成栅极绝缘层；
在所述栅极绝缘层上形成栅极。
11.根据权利要求10所述的制作方法，其特征在于，所述制作方法还包括在所述在栅极绝缘层上形成栅极的步骤与所述形成源极和漏极的步骤之间进行的：
形成层间绝缘层；
在对应于源极接触区的位置形成同时贯穿所述栅极绝缘层和所述层间绝缘层的源极过孔，在对应于漏极接触区的位置形成同时贯穿所述栅极绝缘层和所述层间绝缘层的漏极过孔。
12.根据权利要求11所述的制作方法，其特征在于，形成栅极绝缘层的步骤包括：
在所述有源层上方依次形成硅的氧化物层和硅的氮化物层；和/或
形成层间绝缘层的步骤包括：
在所述栅极上方依次形成硅的氧化物层和硅的氮化物层。
13.一种阵列基板，其特征在于，所述阵列基板包括权利要求1至6中任意一项所述的低温多晶硅薄膜晶体管。
14.一种显示装置，其特征在于，所述显示装置包括权利要求13所述的阵列基板。
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