KR100366960B1 - 실리콘 결정화 방법 - Google Patents
실리콘 결정화 방법 Download PDFInfo
- Publication number
- KR100366960B1 KR100366960B1 KR10-2000-0051296A KR20000051296A KR100366960B1 KR 100366960 B1 KR100366960 B1 KR 100366960B1 KR 20000051296 A KR20000051296 A KR 20000051296A KR 100366960 B1 KR100366960 B1 KR 100366960B1
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- silicon
- nisi
- crystal wafer
- amorphous silicon
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002425 crystallisation Methods 0.000 title abstract description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 42
- 229910005881 NiSi 2 Inorganic materials 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 24
- 230000008025 crystallization Effects 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- 239000012535 impurity Substances 0.000 abstract description 5
- 229910052723 transition metal Inorganic materials 0.000 abstract description 2
- 150000003624 transition metals Chemical class 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 239000012071 phase Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (14)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 니켈(Ni)을 이용하여 NiSi2단결정 웨이퍼를 형성하는 단계와;기판 상에 비정질 실리콘층을 형성하는 단계와;상기 비정질 실리콘층 표면에 상기 NiSi2단결정 웨이퍼의 단결정면을 접촉시키고, 상기 NiSi2단결정 웨이퍼에 전기장을 가하면서 열처리하는 단계와;상기 열처리를 통해 상기 비정질 실리콘층을 단결정화하는 단계를 포함하는 단결정 실리콘의 제조방법.
- 청구항 1에 있어서,상기 NiSi2단결정 웨이퍼를 형성하는 단계에서는, 실리콘 단결정 웨이퍼를 구비하는 단계와, 상기 실리콘 단결정 웨이퍼 상부에 니켈층을 형성하는 단계와, 상기 니켈층이 형성된 실리콘 단결정 웨이퍼를 열처리하는 단계를 포함하는 단결정 실리콘의 제조방법.
- 청구항 9에 있어서,상기 실리콘 단결정 웨이퍼의 열처리는 적어도 500℃보다 높은 온도에서 이루어지는 단결정 실리콘의 제조방법.
- 청구항 9에 있어서,상기 니켈층은, 상기 실리콘 단결정 웨이퍼에 니켈 파우더를 흡착하는 방법으로 형성하는 단결정 실리콘의 제조방법.
- 청구항 9에 있어서,상기 니켈층은, 상기 실리콘 단결정 웨이퍼에 스퍼터링(sputtering) 방법으로 형성하는 단결정 실리콘의 제조방법.
- 청구항 8에 있어서,상기 열처리 단계는, 400℃ ~ 500℃의 온도범위에서 이루어지는 단결정 실리콘의 제조방법.
- 청구항 8에 있어서,상기 기판은 유리 기판으로 이루어지는 단결정 실리콘의 제조방법.
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KR10-2000-0051296A KR100366960B1 (ko) | 2000-08-31 | 2000-08-31 | 실리콘 결정화 방법 |
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KR10-2000-0051296A KR100366960B1 (ko) | 2000-08-31 | 2000-08-31 | 실리콘 결정화 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20020017782A KR20020017782A (ko) | 2002-03-07 |
KR100366960B1 true KR100366960B1 (ko) | 2003-01-09 |
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KR10-2000-0051296A KR100366960B1 (ko) | 2000-08-31 | 2000-08-31 | 실리콘 결정화 방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230036495A (ko) * | 2021-09-07 | 2023-03-14 | (주)알엔알랩 | 에피택셜 반도체층의 형성 방법 및 이를 적용한 반도체 소자의 제조 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100729942B1 (ko) * | 2004-09-17 | 2007-06-19 | 노재상 | 도전층을 이용한 실리콘 박막의 어닐링 방법 및 그로부터제조된 다결정 실리콘 박막 |
CN109378298B (zh) * | 2018-10-10 | 2022-04-29 | 京东方科技集团股份有限公司 | 显示背板及其制作方法和显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000052007A (ko) * | 1999-01-28 | 2000-08-16 | 장진 | 전기장과 플라즈마를 이용한 다결정질 실리콘 박막 증착 방법 |
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- 2000-08-31 KR KR10-2000-0051296A patent/KR100366960B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20000052007A (ko) * | 1999-01-28 | 2000-08-16 | 장진 | 전기장과 플라즈마를 이용한 다결정질 실리콘 박막 증착 방법 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230036495A (ko) * | 2021-09-07 | 2023-03-14 | (주)알엔알랩 | 에피택셜 반도체층의 형성 방법 및 이를 적용한 반도체 소자의 제조 방법 |
WO2023038365A1 (ko) * | 2021-09-07 | 2023-03-16 | (주)알엔알랩 | 에피택셜 반도체층의 형성 방법 및 이를 적용한 반도체 소자의 제조 방법 |
KR102538146B1 (ko) * | 2021-09-07 | 2023-05-30 | (주)알엔알랩 | 에피택셜 반도체층의 형성 방법 및 이를 적용한 반도체 소자의 제조 방법 |
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