KR20050045983A - 비정질 실리콘 결정화용 광학 마스크 - Google Patents
비정질 실리콘 결정화용 광학 마스크 Download PDFInfo
- Publication number
- KR20050045983A KR20050045983A KR1020050037682A KR20050037682A KR20050045983A KR 20050045983 A KR20050045983 A KR 20050045983A KR 1020050037682 A KR1020050037682 A KR 1020050037682A KR 20050037682 A KR20050037682 A KR 20050037682A KR 20050045983 A KR20050045983 A KR 20050045983A
- Authority
- KR
- South Korea
- Prior art keywords
- amorphous silicon
- crystallization
- region
- mask
- pattern
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 49
- 230000003287 optical effect Effects 0.000 title claims abstract description 9
- 238000002425 crystallisation Methods 0.000 title claims description 35
- 230000008025 crystallization Effects 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 35
- 230000000903 blocking effect Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 33
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000000593 degrading effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
- 화소영역이 정의되고, 상기 각 화소영역 내에 형성된 박막트랜지스터를 포함하고, 서로 중첩되는 제 1, 2 영역이 정의되는 어레이기판 상에 비정질실리콘을 결정화하기 위한 마스크에 있어서,상기 각 화소영역 내의 박막 트랜지스터에 대응하며, 동일한 이격간격을 가지며, 그 전체 면적 비율이 50%이하로 구성된 다수의 패턴부와;상기 다수의 패턴부 중 최외각에 형성된 패턴부의 외측으로 테두리의 네 꼭지점부분에 각각 형성된 제 1 내지 제 4 얼라인 키 패턴과;상기 패턴부와 제 1 내지 제 4 얼라인 키 패턴을 제외한 영역에 대응하여 구비된 빛을 차단하는 차광막을 포함하는 비정질 실리콘의 결정화용 광학 마스크.
- 제 1 항에 있어서,상기 패턴부는 일정 간격 이격되어 있는 다수의 슬릿을 포함하는 비정질 실리콘의 결정화용 광학 마스크.
- 제 2 항에 있어서,상기 슬릿의 폭은 2 ㎛ 내지 3 ㎛의 범위를 가지는 비정질 실리콘의 결정화용 광학 마스크.
- 제 2 항에 있어서,상기 슬릿 사이의 간격은 4 ㎛ 내지 6 ㎛의 범위를 가지는 비정질 실리콘의 결정화용 광학 마스크.
- 제 1 항에 있어서,상기 패턴부는 제 1 및 제 2 영역을 가지며, 상기 제 1 영역은 일정 간격을 가지는 제 1 스페이스에 의해 분리되어 있는 다수의 제 1 슬릿을 포함하고, 상기 제 2 영역은 일정 간격을 가지는 제 2 스페이스에 의해 분리되어 있는 다수의 제 2 슬릿을 포함하는 비정질 실리콘의 결정화용 광학 마스크.
- 제 5 항에 있어서,상기 제 1 슬릿은 상기 제 2 스페이스와 대응하고, 상기 제 1 스페이스는 상기 제 2 슬릿과 대응하는 비정질 실리콘의 결정화용 광학 마스크.
- 제 5 항에 있어서,상기 제 1 슬릿 및 제 2 슬릿은 2 ㎛ 내지 3㎛의 폭을 가지는 비정질 실리콘의 결정화용 광학 마스크.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050037682A KR100833956B1 (ko) | 2005-05-04 | 2005-05-04 | 비정질 실리콘 결정화용 광학 마스크 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050037682A KR100833956B1 (ko) | 2005-05-04 | 2005-05-04 | 비정질 실리콘 결정화용 광학 마스크 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0086988A Division KR100496139B1 (ko) | 2002-12-30 | 2002-12-30 | 광학용 마스크, 이를 이용한 비정질 실리콘막의 결정화방법 및 어레이 기판의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050045983A true KR20050045983A (ko) | 2005-05-17 |
KR100833956B1 KR100833956B1 (ko) | 2008-05-30 |
Family
ID=37245467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050037682A KR100833956B1 (ko) | 2005-05-04 | 2005-05-04 | 비정질 실리콘 결정화용 광학 마스크 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100833956B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8575601B2 (en) | 2010-08-17 | 2013-11-05 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
CN108761858A (zh) * | 2018-05-21 | 2018-11-06 | 南京中电熊猫液晶显示科技有限公司 | 一种掩膜版及液晶面板不良品再利用的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3450509B2 (ja) * | 1995-04-13 | 2003-09-29 | キヤノン株式会社 | 投影露光装置及び該装置を用いて素子を製造する方法 |
JP3450580B2 (ja) * | 1996-03-26 | 2003-09-29 | キヤノン株式会社 | 露光装置および露光方法 |
JP3945805B2 (ja) * | 2001-02-08 | 2007-07-18 | 株式会社東芝 | レーザ加工方法、液晶表示装置の製造方法、レーザ加工装置、半導体デバイスの製造方法 |
KR100405080B1 (ko) * | 2001-05-11 | 2003-11-10 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법. |
KR100424593B1 (ko) * | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법 |
-
2005
- 2005-05-04 KR KR1020050037682A patent/KR100833956B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8575601B2 (en) | 2010-08-17 | 2013-11-05 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
CN108761858A (zh) * | 2018-05-21 | 2018-11-06 | 南京中电熊猫液晶显示科技有限公司 | 一种掩膜版及液晶面板不良品再利用的方法 |
CN108761858B (zh) * | 2018-05-21 | 2020-11-27 | 南京中电熊猫液晶显示科技有限公司 | 一种掩膜版及液晶面板不良品再利用的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100833956B1 (ko) | 2008-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100496139B1 (ko) | 광학용 마스크, 이를 이용한 비정질 실리콘막의 결정화방법 및 어레이 기판의 제조 방법 | |
KR100379361B1 (ko) | 실리콘막의 결정화 방법 | |
KR100712648B1 (ko) | 반도체 박막을 결정화하는 방법, 레이저 조사 시스템, 박막 트랜지스터 제조 방법, 표시 장치의 제조 방법 및 유기 el 표시 장치의 제조 방법 | |
US6492213B1 (en) | Semiconductor device, thin film transistor and method for producing the same, and liquid crystal display apparatus and method for producing the same | |
KR100816344B1 (ko) | 다결정 규소용 마스크 및 이를 이용한 박막 트랜지스터의제조 방법 | |
US7217642B2 (en) | Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask | |
KR100686946B1 (ko) | 반도체 박막기판, 반도체장치, 반도체장치의 제조방법 및전자장치 | |
JP2004054168A (ja) | 画像表示装置 | |
JP2004111972A (ja) | 多結晶化用マスク及びこれを利用した薄膜トランジスタの製造方法 | |
US5580801A (en) | Method for processing a thin film using an energy beam | |
JPH06124890A (ja) | 薄膜状半導体装置の作製方法。 | |
KR100487256B1 (ko) | 폴리 실리콘 박막 트랜지스터 제조방법 | |
JP2000275668A (ja) | レーザアニーリング装置、液晶表示装置及びその製造方法 | |
KR100833956B1 (ko) | 비정질 실리콘 결정화용 광학 마스크 | |
KR101588448B1 (ko) | 폴리실리콘을 이용한 박막트랜지스터를 포함하는 어레이 기판 및 이의 제조방법 | |
JP3845566B2 (ja) | 薄膜半導体装置及びその製造方法並びに当該装置を備える電子デバイス | |
JPH06124889A (ja) | 薄膜状半導体装置の作製方法 | |
KR101289066B1 (ko) | 결정화방법 및 결정화 마스크 제작방법 | |
JPH0697193A (ja) | 半導体装置とその製造方法 | |
KR100758156B1 (ko) | 다결정 실리콘 박막 트랜지스터의 제조 방법 및 그 방법으로 제조된 액정표시장치용 어레이 기판 | |
JP3845569B2 (ja) | 薄膜半導体装置及びその製造方法並びに当該装置を備える電子デバイス | |
KR20090073479A (ko) | 액정표시장치용 어레이 기판 및 그의 제조방법 | |
JPH0645607A (ja) | 液晶表示装置及びその製造方法 | |
KR100709282B1 (ko) | 박막 트랜지스터 및 제조 방법 | |
JPH0566422A (ja) | 液晶表示装置の製造方法及びセンサの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120330 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20130329 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20150429 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160428 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170413 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180416 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190417 Year of fee payment: 12 |