KR930018754A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR930018754A
KR930018754A KR1019930002385A KR930002385A KR930018754A KR 930018754 A KR930018754 A KR 930018754A KR 1019930002385 A KR1019930002385 A KR 1019930002385A KR 930002385 A KR930002385 A KR 930002385A KR 930018754 A KR930018754 A KR 930018754A
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South Korea
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thin film
semiconductor device
polycrystalline silicon
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region
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KR1019930002385A
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KR970004844B1 (ko
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미찌야 야마구찌
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가시오 가즈오
가시오 게이상기 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

본 발명은 캐리어를 전도하기 위한 다결정실리콘박막을 주요부에 갖는, 예를들면 박막트랜지스터등의 반도체 장치에 관한 것으로, 캐리어의 이동도의 대폭적 향상을 가능하게 한 반도체장치를 제공하는 것을 목적으로 하는 것이다.
상기 목적을 달성하기 위해 본 발명의 반도체장치는 다결정실리콘박막의 입자크기와 결정크기를 대략 동일한 크기로 하므로서 전계효과 이동도FE를 대폭 향상할 수 있고, 나아가서는 10MHz 정도의 클록주파수로 동작하는 구동회로를 반도체장치로 작성할 수 있도록 하였다.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도~제6도는 본 발명의 반도체 장치의 일예로서의, 전계효과형 박막트랜지스터를 제조할 경우의 각 공정에 있어서의 확대단면도.

Claims (11)

  1. 입자크기와(1,1,1)면에 있어서의 결정크기가 대략 동일크기이되, 막두께보다도 큰 다결정 실리콘박막(3)을 주요부로 갖는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 입자크기 및 (1,1,1)면에 있어서의 결정크기는, 모두 그 평균치가 180nm 이상일 것을 특징으로 하는 반도체 장치.
  3. 제2항에 있어서, 상기 입자크기는 그 평균치가 200nm 이상일 것을 특징으로 하는 반도체장치.
  4. 제1항 에 있어서, 상기 다결정실리콘박막(3)은, 막두께가 500~1500Å인 것을 특징으로 하는 반도체장치.
  5. 소스영역(3b) 및 드레인영역(3b)을 가지며, 입자크기와 (1,1,1)면에 있어서의 결정크기가 대략 동일한 크기이되, 막두께 보다도 큰 다결정실리콘박막(3)과 상기 다결정실리콘박막(3)의 일면상에 형성된 게이트절연막(7)과, 상기 다결정 실리콘박막(3)의 소스영역(3b) 및 드레인영역(3b)에 각각 접속된 소스전극(10) 및 드레인전극(10)과, 상기 게이트절연막(7)상에 형성된 게이트전극(8)에 의하여 구성된 것을 특징으로 하는 반도체장치.
  6. 결정크기의 평균치가 180nm 이상의 다결정실리콘박막(3)을 주요부에 가진 반도체장치.
  7. 제6항에 있어서, 상기 결정크기는, 상기 다결정실리콘박막(3)의 막두께보다도 큰 것을 특징으로 하는 반도체장치.
  8. 소스영역(3b) 및 드레인영역(3b)을 가지며, (1,1,1)면에 있어서의 결정크기의 평균치가 180nm 이상인 다결정 실리콘박막(3)과, 상기 다결정실리콘박막(3)의 일면상에 형성된 게이트절연막(7)과, 상기 다결정 실리콘박막(3)의 소스영역(3b) 및 드레인영역(3b)에 각각 접속된 소스전극(10) 및 드레인전극(10)과, 상기 게이트절연막(7)상에 형성된 게이트전극(8)에 의하여 구성된 것을 특징으로 하는 반도체장치.
  9. 제8항에 있어서, 상기 소스영역(3b) 및 상기 드레인영역(3b)에는, 도팬트가 확산되어 있는 것을 특징으로 하는 한 반도체장치.
  10. 각각이 그 평균치가 180nm 이상의 크기로 되었으며, 대략 동일 크기의 입자크기의 보유하고, 도팬트가 확산된 불순물 영역과(3b) 도팬트가 실질적으로 함유되지 아니한 진정영역(3a)으로 된 다결정 실리콘박막(3)을 주요부에 갖는 것을 특징으로 하는 반도체장치.
  11. 제10항에 있어서, 상기 결정크기는 상기 다결정실리콘박막(3)의 막두께 보다도 큰 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930002385A 1992-02-28 1993-02-20 반도체 장치 KR970004844B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4075921A JP2935446B2 (ja) 1992-02-28 1992-02-28 半導体装置
JP92-75921 1992-02-28

Publications (2)

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KR930018754A true KR930018754A (ko) 1993-09-22
KR970004844B1 KR970004844B1 (ko) 1997-04-04

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Country Status (10)

Country Link
US (1) US5949091A (ko)
EP (1) EP0558075B1 (ko)
JP (1) JP2935446B2 (ko)
KR (1) KR970004844B1 (ko)
CN (1) CN1026041C (ko)
CA (1) CA2090096C (ko)
DE (1) DE69333592T2 (ko)
HK (1) HK1013521A1 (ko)
SG (1) SG55060A1 (ko)
TW (1) TW335216U (ko)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR100404701B1 (ko) * 2000-09-25 2003-11-10 가부시키가이샤 히타치세이사쿠쇼 액정 표시용 박막 반도체 소자 및 그 제조 방법

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TW264575B (ko) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US6059873A (en) 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
US6100119A (en) * 1995-08-31 2000-08-08 Lg Electronics Inc. Thin film transistor and method for fabricating the same
JPH11145056A (ja) * 1997-11-07 1999-05-28 Sony Corp 半導体材料
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP4437570B2 (ja) * 1999-07-12 2010-03-24 株式会社ルネサステクノロジ 半導体装置及び半導体装置の製造方法
US6229611B1 (en) * 1999-09-20 2001-05-08 United Microelectronics Corp. Method of detecting a transparent quartz wafer in a semiconductor equipment
JP6941473B2 (ja) * 2017-04-26 2021-09-29 株式会社日本製鋼所 ディスプレイの製造方法、ディスプレイ及び液晶テレビ

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100404701B1 (ko) * 2000-09-25 2003-11-10 가부시키가이샤 히타치세이사쿠쇼 액정 표시용 박막 반도체 소자 및 그 제조 방법

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Publication number Publication date
CN1026041C (zh) 1994-09-28
JPH05243576A (ja) 1993-09-21
TW335216U (en) 1998-06-21
CA2090096C (en) 1998-08-11
HK1013521A1 (en) 1999-08-27
US5949091A (en) 1999-09-07
JP2935446B2 (ja) 1999-08-16
EP0558075A2 (en) 1993-09-01
EP0558075B1 (en) 2004-08-18
DE69333592T2 (de) 2005-01-05
SG55060A1 (en) 1998-12-21
KR970004844B1 (ko) 1997-04-04
DE69333592D1 (de) 2004-09-23
CN1076551A (zh) 1993-09-22
EP0558075A3 (ko) 1994-01-19
CA2090096A1 (en) 1993-08-29

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