KR930017218A - 박막전계효과 트랜지스터 및 그 제조방법 - Google Patents

박막전계효과 트랜지스터 및 그 제조방법 Download PDF

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KR930017218A
KR930017218A KR1019930000494A KR930000494A KR930017218A KR 930017218 A KR930017218 A KR 930017218A KR 1019930000494 A KR1019930000494 A KR 1019930000494A KR 930000494 A KR930000494 A KR 930000494A KR 930017218 A KR930017218 A KR 930017218A
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semiconductor layer
polycrystalline semiconductor
field effect
forming
thin film
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히로시 다카하시
요시카즈 고지마
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하라 레이노스케
세이코덴시고교 가부시키가이샤
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Publication of KR930017218A publication Critical patent/KR930017218A/ko

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    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
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    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

Abstract

박막전계효과 트랜지스터는 채널영역을 이루는 다결정반도체층과 게이트전극을 이루는 도전층 및 상기 채널영역과 게이트전극 사이에 배설되는, 게이트 절연막을 이루는 절연층을 구비하는 3층구조를 갖는다. 상기 채널영역과 게이트절연막 사이에 배설되는 인터페이스의 조성되는 수 nm이하로 되게 하여 트랜지스터의 전류구동도를 향상시키는 효과를 갖게한다.

Description

박막전계효과 트랜지스터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 박막전계효과 트랜지스터장치(이하 TFT장치라 함)의 기본구조를 나타낸 개략적인 부분단면도, 제2(a)도 내지 제2(c)도는 비결정질 규소막과 다결정규소막 그리고 괴상결정규소의 표면상태를 사시도로 각각 도시한 도면, 제3도는 재결정된 다결정 규소막의 표면상태를 사시도로 도시한 도면.

Claims (12)

  1. 적어도 하나의 3층구조를 가진 박막전계효과 트랜지스터에 있어서, 채널영역을 형성하는 다결정반도체층과, 상기 다결정반도체층상에 게이트절연막을 이루는 절연층 및, 상기 절연막상에 게이트전극을 이루는 도체층을 구비하고 상기 채널영역과 상기 게이트절연막 사이에 평판인터페이스를 배설한 것을 특징으로 하는 박막전계효과 트랜지스터.
  2. 제1항에 있어서, 상기 다결정반도체층의 두께는 0.3㎛ 이하인 것을 특징으로 하는 박막전계효과 트랜지스터.
  3. 제1항에 있어서, 상기 평판인터페이스의 표면 조성도가 3nm 이하인 것을 특징으로 하는 박막전계효과 트랜지스터.
  4. 제1항에 있어서, 상기 평판인터페이스의 표면 조성도가 상기 다결정반도체층두께의 1/50 이하인 것을 특징으로 하는 박막전계효과 트랜지스터.
  5. 박막전계효과 트랜지스터를 제조하는 방법에 있어서, 배면기판상에 채널영역을 이루는 다결정반도체층을 형성하는 단계와, 상기 다결정반도체층의 표면을 평평하게 하는 단계와, 상기 다결정반도체층의 평판면상에 게이트절연막을 이루는 절연층을 형성하는 단계와, 상기 게이트절연막상에 게이트전극을 이루는 도전층을 피착하는 단계 및, 소오스 및 드레인 영역을 이루는 다결정반도체층의, 채널 영역에 의해서 서로 분리된 2개의 섹션내에 불순물을 주입하는 단계로 이루어진 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  6. 제5항에 있어서, 표면을 평평하게 하는 단계는 다결정 반도체층의 표면을 연마하는 단계를 포함하는 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  7. 제5항에 있어서, 표면을 평평하게 하는 단계는 표면조성도를 유지시키는 캡절연체를 피착하는 단계를 포함하는 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  8. 제5항에 있어서, 절연층을 형성하는 단계는 CVD단계를 포함하는 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  9. 박막전계효과 트랜지스터를 제조하는 방법에 있어서, 배면 기판상에 게이트전극을 이루는 도전층을 피착하는 단계와, 상기 게이트전극의 표면을 평평하게 하는 단계와, 상기 게이트전극의 평탄면상에 게이트절연막을 이루는 절연막을 형성하는 단계와, 상기 게이트절연막상에 채널을 이루는 단결정반도체층을 형성하는 단계와, 소오스 및 드레인영역을 이루는 상기 다결정반도체층의, 상기 채널영역에 의해 서로 분리되는 2개의 섹션내에 불순물을 주입하는 단계로 이루어진 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  10. 제9항에 있어서, 표면을 평평하게 하는 단계는 다결정 반도체층의 표면을 연마하는 단계를 포함하는 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  11. 제9항에 있어서, 표면을 평평하게 하는 단계는 표면조성도를 유지시키는 캡절연체를 피착하는 단계를 포함하는 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
  12. 제9항에 있어서, 절연층을 형성하는 단계는 CVD단계를 포함하는 것을 특징으로 하는 박막전계효과 트랜지스터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930000494A 1992-01-17 1993-01-15 박막전계효과 트랜지스터 및 그 제조방법 KR930017218A (ko)

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JP2728892 1992-01-17
JP92-027288 1992-01-17

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