KR930009127A - Mos형 트랜지스터 반도체 장치 및 그 제조방법 - Google Patents

Mos형 트랜지스터 반도체 장치 및 그 제조방법 Download PDF

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KR930009127A
KR930009127A KR1019920011133A KR920011133A KR930009127A KR 930009127 A KR930009127 A KR 930009127A KR 1019920011133 A KR1019920011133 A KR 1019920011133A KR 920011133 A KR920011133 A KR 920011133A KR 930009127 A KR930009127 A KR 930009127A
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South Korea
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impurity diffusion
diffusion region
gate electrode
polysilicon layer
element isolation
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KR1019920011133A
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English (en)
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마사유끼 하시모도
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시노다 쇼오스께
가부시기가이샤 엔 엠 비 쎄미콘닥터
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Publication of KR930009127A publication Critical patent/KR930009127A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

실리콘 기판면에 차지하는 확산층의 면적을 적게하여 반도체의 고밀도화를 고밀도화를 도모함과 동시에 배선저항을 억제하는 것을 목적으로 스페이서 절연막을 지닌 게이트 전극부, 불순물 확산 영역 및 소자 분리 영역을 형성한 MOS형 트랜지스터 반도체 장치로서 불순물 확산영역과 동일한 불순물이 도우프된 폴리실리콘층을 도전물질로서 불순물확산영역과 접속배선사이에 설치하여 이 폴리실리콘층이 게이트 전극부 및 소자 분리 영역의 불순물 확산영역 근방의 상면에 걸쳐서 불순물 확산영역의 기판면으로의 개구부보다도 확대하여 피복되어 있으며, 폴리실리콘층의 상층의 절연막에 천설된 접속구멍에 접속배선을 형성한 것을 특징으로 한 것이다.

Description

MOS형 트랜지스터 반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 NMOS형 트랜지스터의 제조방법을 공정순으로 나타낸 종단면도.
제2도는 본 발명에 관한 PMOS형 트랜지스터의 제조방법을 공정순으로 나타낸 종단면도.

Claims (2)

  1. 스페이서 절연막을 구비한 게이트 전극부, 불순물 확산 영역 및 소자 분리 영역을 형성한 MOS형 트랜지스터 반도체 장치에 있어서 불순물 확산영역과 동일한 불순물이 도우프된 폴리실리콘층을 도전물질로서 불순물확산영역과 접속배선사이에 설치하여 이 폴리실리콘층이 게이트 전극부 및 소자 분리 영역의 불순물 확산영역 근방의 상면에 걸쳐서 불순물 확산영역의 기판면에의 개구부보다도 확대하여 피복되어 있으며, 폴리실리콘층의 상층의 절연막에 천설된 접속구멍에 접속배선을 형성한 것을 특징으로 하는 MOS,형 트랜지스터의 반도체 장치.
  2. 스페이서 절연체를 지닌 게이트 전극부, 불순물 확산 영역 및 소자 분리 영역을 형성한 MOS형 트랜지스터 반도체 장치의 제조방법에 있어서 실리콘 기판면에 스페이서 절연막을 구비하느 게이트 전극부 및 소자 분리영역을 형성하고 그 상층에 불순물 확산영역을 형성하기 위한 불순물이 도우프한 폴리실리콘을 퇴적시켜, 이 폴리실리콘층을 게이트 전극부 및 소자 분리 영역의 불순물 확산영역 근방의 상면에 걸쳐서 불순물 확산영역의 기판면으로의 개구부보다도 확대하여 패터닝하고 또한 그 상층에 절연막을 퇴적시켜고 이어서 열처리를 실시한 다음, 폴리실리콘층을 확산원으로 하여 기판내에 기판내에 불순물을 확산시켜서 불순물 확산영역을 형성하여 폴리실리콘층의 상층의 절연막에 접속구멍을 천설하므로서 접속배선을 하는 것을 특징으로 하는 MOS형 트랜지스터 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920011133A 1991-10-16 1992-06-25 Mos형 트랜지스터 반도체 장치 및 그 제조방법 KR930009127A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-296306 1991-10-16
JP3296306A JPH05110005A (ja) 1991-10-16 1991-10-16 Ｍｏｓ型トランジスタ半導体装置およびその製造方法

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KR930009127A true KR930009127A (ko) 1993-05-22

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US (1) US5668027A (ko)
JP (1) JPH05110005A (ko)
KR (1) KR930009127A (ko)

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TW302539B (en) * 1996-08-26 1997-04-11 Lin Horng Hyh Manufacturing method of deep submicron PMOS device shallow junction
US5843826A (en) * 1997-06-03 1998-12-01 United Microeletronics Corp. Deep submicron MOSFET device
KR100245271B1 (ko) * 1997-10-01 2000-02-15 윤종용 반도체 장치 및 그의 제조 방법
US6291861B1 (en) * 1998-06-30 2001-09-18 Sharp Kabushiki Kaisha Semiconductor device and method for producing the same
US7935632B2 (en) * 2007-11-06 2011-05-03 Chartered Semiconductor Manufacturing, Ltd. Reduced metal pipe formation in metal silicide contacts

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JPH05110005A (ja) 1993-04-30
US5668027A (en) 1997-09-16

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