KR930017188A - 전계효과 트랜지스터 및 그 제조방법 - Google Patents

전계효과 트랜지스터 및 그 제조방법 Download PDF

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KR930017188A
KR930017188A KR1019930000718A KR930000718A KR930017188A KR 930017188 A KR930017188 A KR 930017188A KR 1019930000718 A KR1019930000718 A KR 1019930000718A KR 930000718 A KR930000718 A KR 930000718A KR 930017188 A KR930017188 A KR 930017188A
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가즈히도 쓰쓰미
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시키모리야
미쓰비시덴키 가부시키가이샤
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

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Abstract

본 발명은 SRAM에 사용하는 전계효과 트랜지스터 및 그 제조방법에 관한 것으로서, 실리콘 기판(1)의 주표면(52)에 설치된 홈(53)내에 채널이 되는 다결정실리콘막(65)이 있다.
다결정실리콘막(65)의 주위에는 게이트절연막(63)이 있다.
다결정실리콘막(65)의 주위에는 게이트절연막(61)이 있다.
게이트전극(61)의 주위에는 실리콘산화막(59)이 있다. 실리콘산화막(59)의 주위에는 소스/드레인막(57)이 있다.
실리콘산화막(59)의 주위에는 소스/드레인막(57)이 있고, 소스/드레인막(57)주위에는 실리콘산화막(53)이 있다. 소스/드레인막(67)은 다결정실리콘막(65)에 전기적으로 접속되어 있다. 소스/드레인막(57)은 다결정실리콘막(65)에 전기적으로 접속되어 있다.
다결정실리콘막(65)이 홈의 깊이 방향으로 뻗어 있으므로 채널길이를 쇼트채널효과를 방지할 수 있는 충분한치수로 할 수 있다.
에피타키셜층에 채널로 사용하는 경우에 비하여 다결정실리콘막(65)을 채널로 사용하므로 장치의 제조소요시간을 단축할 수 있다.

Description

전계효과 트랜지스터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 제1실시예에 의한 전계효과트랜지스터의 단면도, 제2도-제3도는 이 발명의 제1실시예에 의한 전계효과트랜지스터 제조방법의 각공정을 표시하는 실리콘 기판의 단면도.

Claims (13)

  1. 반도체기판(51)의 주표면(52)에 설치된 구멍부(53)에 형성된 전계효과 트랜지스터이며, 상기 구멍부(53)내에 위치하고 상기 구멍부(53)의 깊이방향으로 뻗어 있으며, 상기 주표면(52)측에 제1단부와 상기 구멍부(53)의 저부측에 제2단부가 있고, 채널이 되는 제1다결정 실리콘막(65)과; 상기 구멍부(53)내에 위치하고, 상기 구멍부(53)의 깊이방향을 따라뻗어 있으며, 게이트절연막(63)을 개재시켜서 상기 제1다결정실리콘막(65)과 대향하고 있는 게이트전극(61)과; 상기 구멍부(53)내에서 상기 제1다결정실리콘막(65)과 상기 게이트전극(61)의 주위에 위치하고, 상기 구멍부(53)의 깊이 방향을 따라 뻗어있으며, 상기 제2단부에 전기적으로 접속된 제1소스/드레인 막(57)과; 상기 구멍부(53)내에 위치하고, 상기 제1소스/드레인 막(57)을 상기 게이트전극(61)으로부터 전기적으로 절연하는 제1절연막(59)과; 상기 구멍부(53)내에 위치하고, 상기 소스/드레인막(57)을 상기 반도체기판(51)으로부터 전기적으로 절연하는 제2절연막(55)과; 상기 주표면(52)상에 위치하고, 상기 제1단부에 전기적으로 접속된 제2소스/드레인막(67)으로 구성된 전계효과 트랜지스터.
  2. 제 1항에 있어서, 상기 제2소스/드레인막(67)은 LDD구조로 되어있는 전계효과 트랜지스터.
  3. 제 1항에 있어서, 상기 게이트절연막(63)은 상기 제1다결정실리콘막(65)의 주위에 위치하고, 상기 게이트 전극(61)은 상기 게이트 절연막(63) 주위에 위치하는 전계효과 트랜지스터.
  4. 제 1항에 있어서, 상기 제1소스/드레인막(57)은 상기 구멍부(53)의 저면으로 뻗어서 상기 제1다결정실리콘막(65)에 전기적으로 접속된 전계효과 트랜지스터.
  5. 제 1항에 있어서, 상기 제1소스/드레인막(57)과 상기 게이트전극(61)은 상기 주표면(52)상으로 뻗어있는 전계효과 트랜지스터.
  6. 제 5항에 있어서, 상기 제1소스/드레인막(57)은 상기 주표면(52)에 형성된 다른 전계효과트랜지스터의 소스/드레인영역(85)에 전기적으로 접속되고, 상기 게이트전극(61)은 상기 다른 전계효과 트랜지스터(11)의 게이트전극(61)에 전기적으로 접속된 전계효과 트랜지스터.
  7. 제 6항에 있어서, 상기 제1소스/드레인막(57)은 제1도전형이고, 상기 소스/드레인영역(85)은 제2도전형인 전계효과 트랜지스터.
  8. 제 7항에 있어서, 상기 제1소스/드레인막(57)은 실리사이드막(89)을 개재시켜서 상기 소스/드레인영역(85)에 전기적으로 접속된 전계효과 트랜지스터.
  9. 제 7항에 있어서 상기 전계효과 트랜지스터와 다른 전계효과 트랜지스터는 인버터를 형성하는 전계효과 트랜지스터.
  10. 제 9항에 있어서, 인버터를 추가구성하고, 상기 인버터와 상기 추가구성한 인버터는 SRAM의 플립플롭을 형성하는 전계효과 트랜지스터.
  11. 반도체기판(51)의 주표면(52)에 설치된 구멍부(53)내에 형성된 전계효과 트랜지스터의 제조방법이며, 상기 구멍부(53)를 형성하는 공정과; 상기 구멍부(53)가 완전충전되지 않도록 상기 구멍부(53)의 측면과 저면에제1절연막(55) 제1소스/드레인이 되는 제1다결정실리콘막(56), 제2절연막(59), 제2다결정실리콘막(61)을 축차형성하는 공정과; 상기 제2다결정실리콘막(61)상에 레지스트(71)를 형성하고, 상기 레지스트(71)에 소정패턴닝을 실시하는 공정과; 상기 레지스트(71)를 마스크로하여 제2다결정성실리콘막(61)을 에칭하여 게이트전극(61)을 형성하고 상기 저면상의 제2절연막(59)을 노출시키는 공정과; 상기 레지스트(71)을 마스크로하여 상기 노출된 제2절연막(59)을 에칭하여 노출된 제2절연막(59)아래의 상기 제1다결정실리콘막(56)을 노출시키는 공정과; 상기 구멍부(53)가 완전충전되지 않도록 상기 게이트전극(61)과 상기 제1다결정실리콘막(56)으로 형성된 공간내에 게이트절연막(63)을 형성하는 공정과; 상기 저면상의 게이트절연막(63)을 제거하고 상기 제1다결정실리콘막(56)을 노출시키는 공정과; 상기 게이트절연막(63)과 상기 노출된 제1다결정실리콘막(56)으로 형성된 공간을 충전하도록 채널이 되는 제3다결정실리콘막(65)을 형성하는 공정과; 상기 주표면(52)상기 상기 제3다결정실리콘막(65)에 전기적으로 접속되고 제2소스/드레인이 되는 제4다결정실리콘막(75)을 형성하는 공정으로 구성된 전계효과 트랜지스터의 제조방법.
  12. 제 11항에 있어서, 상기 저면상의 게이트절연막을 제거하고 상기 제1다결정실리콘막(56)을 노출시키는 상기 공정후에, 상기 게이트절연막(63)과 상기 노출된 제1다결정실리콘막(56)으로 형성된 공간내에 채녈이 되는제3다결정실리콘막(65)을 형성하는 공정과, 상기 게이트절연막(63)과 상기 제3다결정실리콘막(65)으로 형성된 공간내에 제4다결정실리콘막(81)을 형성하는 공정과, 상기 주표면(52)상의 제4다결정실리콘막(81)에 전기적으로 접속되는 상기 제4다결정 실리콘막(81)보다도 고불순물농도의 제4′다결정실리콘막(83)을 형성하는 공정으로 구성되고 상기 제4및 4′의 다결정실리콘막으로 제2소스/드레인을 형성하는 전계효과트랜지스터의 제조방법.
  13. 제 11항에 있어서, 상기 제3다결정실리콘막(65)에는 CVD방법에 의하여 형성되는 전계효과 트랜지스터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930000718A 1992-01-24 1993-01-20 전계효과 트랜지스터 및 그 제조방법 KR970011677B1 (ko)

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JP92-011412 1992-01-24
JP4011412A JPH05206394A (ja) 1992-01-24 1992-01-24 電界効果トランジスタおよびその製造方法
JP92-011412. 1992-01-24

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KR970011677B1 KR970011677B1 (ko) 1997-07-14

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Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130470A (en) * 1997-03-24 2000-10-10 Advanced Micro Devices, Inc. Static random access memory cell having buried sidewall capacitors between storage nodes
US6297531B2 (en) * 1998-01-05 2001-10-02 International Business Machines Corporation High performance, low power vertical integrated CMOS devices
US6459123B1 (en) 1999-04-30 2002-10-01 Infineon Technologies Richmond, Lp Double gated transistor
US6472767B1 (en) * 1999-04-30 2002-10-29 Infineon Technologies Ag Static random access memory (SRAM)
JP2004096065A (ja) 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP4343571B2 (ja) 2002-07-31 2009-10-14 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4729609B2 (ja) * 2002-07-31 2011-07-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2004158589A (ja) * 2002-11-06 2004-06-03 Renesas Technology Corp 半導体装置
DE10339529A1 (de) * 2003-08-21 2005-03-24 Hahn-Meitner-Institut Berlin Gmbh Vertikaler Nano-Transistor, Verfahren zu seiner Herstellung und Speicheranordnung
US7635855B2 (en) 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7449710B2 (en) * 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7599217B2 (en) * 2005-11-22 2009-10-06 Macronix International Co., Ltd. Memory cell device and manufacturing method
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7459717B2 (en) * 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7521364B2 (en) * 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7531825B2 (en) 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) * 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US7595218B2 (en) * 2006-01-09 2009-09-29 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7560337B2 (en) 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
TWI300975B (en) * 2006-06-08 2008-09-11 Nanya Technology Corp Method for fabricating recessed-gate mos transistor device
US7696506B2 (en) * 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
US7785920B2 (en) 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7772581B2 (en) 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
US7504653B2 (en) * 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7863655B2 (en) 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7473576B2 (en) 2006-12-06 2009-01-06 Macronix International Co., Ltd. Method for making a self-converged void and bottom electrode for memory cell
US7476587B2 (en) 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7903447B2 (en) 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US7718989B2 (en) 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US7619311B2 (en) 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7884343B2 (en) 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US7956344B2 (en) 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7786461B2 (en) * 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US7569844B2 (en) 2007-04-17 2009-08-04 Macronix International Co., Ltd. Memory cell sidewall contacting side electrode
US7700999B2 (en) * 2007-07-05 2010-04-20 Infineon Technologies Ag SRAM device
TWI402980B (zh) * 2007-07-20 2013-07-21 Macronix Int Co Ltd 具有緩衝層之電阻式記憶結構
US7729161B2 (en) * 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US8178386B2 (en) 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US7642125B2 (en) 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US7919766B2 (en) * 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US7646631B2 (en) 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7639527B2 (en) 2008-01-07 2009-12-29 Macronix International Co., Ltd. Phase change memory dynamic resistance test and manufacturing methods
US7879643B2 (en) 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US7879645B2 (en) 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8084842B2 (en) 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US7791057B2 (en) 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) * 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US8415651B2 (en) 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7719913B2 (en) 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8324605B2 (en) 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
US8036014B2 (en) 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8089137B2 (en) 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) * 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US7968876B2 (en) * 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) * 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) * 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) * 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8110822B2 (en) * 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) * 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US20110049456A1 (en) * 2009-09-03 2011-03-03 Macronix International Co., Ltd. Phase change structure with composite doping for phase change memory
US8064248B2 (en) * 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) * 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US9666639B2 (en) * 2010-09-17 2017-05-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US9431305B1 (en) * 2015-12-18 2016-08-30 International Business Machines Corporation Vertical transistor fabrication and devices

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131907A (en) * 1977-09-28 1978-12-26 Ouyang Paul H Short-channel V-groove complementary MOS device
US4322453A (en) * 1980-12-08 1982-03-30 International Business Machines Corporation Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering
JPS60136369A (ja) * 1983-12-26 1985-07-19 Toshiba Corp 半導体装置及びその製造方法
JPS62193179A (ja) * 1986-02-19 1987-08-25 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JPS62272561A (ja) * 1986-05-20 1987-11-26 Seiko Epson Corp １トランジスタ型メモリセル
US4686552A (en) * 1986-05-20 1987-08-11 Motorola, Inc. Integrated circuit trench cell
JP2537202B2 (ja) * 1986-07-07 1996-09-25 株式会社東芝 半導体装置
US4835584A (en) * 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
JPS63224365A (ja) * 1987-03-13 1988-09-19 Nec Corp 半導体装置
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
JPH0214578A (ja) * 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
JP2667465B2 (ja) * 1988-09-14 1997-10-27 株式会社東芝 半導体装置
JPH02249277A (ja) * 1989-03-23 1990-10-05 Seiko Epson Corp 半導体装置
JPH03187272A (ja) * 1989-12-15 1991-08-15 Mitsubishi Electric Corp Ｍｏｓ型電界効果トランジスタ及びその製造方法
JP2830366B2 (ja) * 1990-05-08 1998-12-02 三菱電機株式会社 半導体装置の製造方法

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US5550396A (en) 1996-08-27
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