KR940020594A - 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법 - Google Patents

에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법 Download PDF

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Publication number
KR940020594A
KR940020594A KR1019930002208A KR930002208A KR940020594A KR 940020594 A KR940020594 A KR 940020594A KR 1019930002208 A KR1019930002208 A KR 1019930002208A KR 930002208 A KR930002208 A KR 930002208A KR 940020594 A KR940020594 A KR 940020594A
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silicon layer
forming
layer
active silicon
region
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KR1019930002208A
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KR960002088B1 (ko
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이태복
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김광호
삼성전자 주식회사
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Priority to KR1019930002208A priority Critical patent/KR960002088B1/ko
Priority to JP6018099A priority patent/JP2687091B2/ja
Priority to DE69431770T priority patent/DE69431770T2/de
Priority to EP94301086A priority patent/EP0612103B1/en
Priority to US08/197,480 priority patent/US5482877A/en
Priority to CN94102697A priority patent/CN1042578C/zh
Priority to TW083101676A priority patent/TW228609B/zh
Publication of KR940020594A publication Critical patent/KR940020594A/ko
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Publication of KR960002088B1 publication Critical patent/KR960002088B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

하부실리콘 기판과 매립 산화층 및 상부실리콘층으로 된 웨이퍼 상에 패드 산화막을 형성하고 상기 매립 산화층에 소정부위에 옥시나이트라이드 영역을 형성하는 단계; 상기 상부 실리콘층을 패터닝하여 상기 옥시나이트라이드 영역과 교차되게 활성 실리콘층을 형성하고, 상기 드러난 옥시나이트라이드 영역에 대해 습식 에칭하여 공동부를 형성하는 단계; 상기 노출된 활성 실리콘층의 표면에 게이트 절연층을 형성하는 단계; 상기 활성실리콘층을 둘러싸고 상기 공동부가 매립되게 도핑된 폴리실리콘을 형성하고, 상기 도핑된 폴리실리콘의 소정 부위만을 에칭하여 제거하여 게이트 전극을 형성하는 단계; 상기 게이트 전극에 의해 이격된 상기 활성 실리콘층에 소오스, 드레인 영역을 형성하는 단계로 이루어짐을 특징으로 하는 SOI 구조의 반도체 장치 제조방법.

Description

에스오아이(SOI : silicon on insulator)구조의 반도체 장치 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도 내지 제9도는 본 발명에 따른 SOI MOSFET 장치 제조방법을 설명하는 공정도.

Claims (2)

  1. 하부실리콘 기판과 매립 산화층 및 상부실리콘층으로 된 웨이퍼 상에 패드 산화막을 형성하고 상기 매립 산화층에 소정부위에 옥시나이트라이드 영역을 형성하는 단계; 상기 상부 실리콘층을 패터닝하여 상기 옥시나이트라이드 영역과 교차되게 활성 실리콘층을 형성하고, 상기 드러난 옥시나이트라이드 영역에 대해 습식 에칭하여 공동부를 형성하는 단계; 상기 노출된 활성 실리콘층의 표면에 게이트 절연층을 형성하는 단계; 상기 활성실리콘층을 둘러싸고 상기 공동부가 매립되게 도핑된 폴리실리콘을 형성하고, 상기 도핑된 폴리실리콘의 소정 부위만을 에칭하에 제거하 게이트 전극을 형성하는 단계; 상기 게이트 전극에 의해 이격된 상기 활성 실리콘층에 소오스, 드레인 영역을 형성하는 단계로 이루어진을 특징으로 하는 SOI 구조의 반도체 장치 제조방법.
  2. 제1항에 있어서, 상기 옥시나이트라이드 영역은 질소를 이온 주입하여 형성하는 것을 특징으로 하는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930002208A 1993-02-17 1993-02-17 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법 KR960002088B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019930002208A KR960002088B1 (ko) 1993-02-17 1993-02-17 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법
JP6018099A JP2687091B2 (ja) 1993-02-17 1994-02-15 シリコンオンインシュレータ構造の半導体装置の製造方法
DE69431770T DE69431770T2 (de) 1993-02-17 1994-02-15 Verfahren zur Herstellung von einem Silizium auf Isolator Halbleiterbauelement
EP94301086A EP0612103B1 (en) 1993-02-17 1994-02-15 Method of manufacturing a silicon-on-insulator semiconductor device
US08/197,480 US5482877A (en) 1993-02-17 1994-02-16 Method for making a semiconductor device having a silicon-on-insulator structure
CN94102697A CN1042578C (zh) 1993-02-17 1994-02-17 制造绝缘体上的硅结构的半导体器件的方法
TW083101676A TW228609B (ko) 1993-02-17 1994-02-28

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KR1019930002208A KR960002088B1 (ko) 1993-02-17 1993-02-17 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법

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KR940020594A true KR940020594A (ko) 1994-09-16
KR960002088B1 KR960002088B1 (ko) 1996-02-10

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US (1) US5482877A (ko)
EP (1) EP0612103B1 (ko)
JP (1) JP2687091B2 (ko)
KR (1) KR960002088B1 (ko)
CN (1) CN1042578C (ko)
DE (1) DE69431770T2 (ko)
TW (1) TW228609B (ko)

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KR970077146A (ko) * 1996-05-20 1997-12-12 스콧 티. 마이쿠엔 집적회로 에어 브리지 구조 및 그것을 형성하기 위한 방법

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TW228609B (ko) 1994-08-21
US5482877A (en) 1996-01-09
EP0612103A3 (en) 1996-08-28
CN1042578C (zh) 1999-03-17
CN1095860A (zh) 1994-11-30
DE69431770D1 (de) 2003-01-09
EP0612103B1 (en) 2002-11-27
KR960002088B1 (ko) 1996-02-10
DE69431770T2 (de) 2003-09-18
JPH06252403A (ja) 1994-09-09
JP2687091B2 (ja) 1997-12-08

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