JP4525928B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4525928B2 JP4525928B2 JP2005375966A JP2005375966A JP4525928B2 JP 4525928 B2 JP4525928 B2 JP 4525928B2 JP 2005375966 A JP2005375966 A JP 2005375966A JP 2005375966 A JP2005375966 A JP 2005375966A JP 4525928 B2 JP4525928 B2 JP 4525928B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- layer
- manufacturing
- forming
- lower gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 42
- 239000011344 liquid material Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 77
- 238000010586 diagram Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001709 polysilazane Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JZATUBTWKJSEKE-UHFFFAOYSA-N ClCCP(CC)CC.[Au] Chemical compound ClCCP(CC)CC.[Au] JZATUBTWKJSEKE-UHFFFAOYSA-N 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ASYJAZFLOKUDNS-UHFFFAOYSA-N [Au].ClC1=C(C=CC=C1)P(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound [Au].ClC1=C(C=CC=C1)P(C1=CC=CC=C1)C1=CC=CC=C1 ASYJAZFLOKUDNS-UHFFFAOYSA-N 0.000 description 1
- KTWQIPKJTRJCTR-UHFFFAOYSA-N [Au].ClCP(C)C Chemical compound [Au].ClCP(C)C KTWQIPKJTRJCTR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000011328 necessary treatment Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Description
ン金(I)、銀(I)2,4−ペンタンジオナト錯体、トリメチルホスフィン(ヘキサ
フルオロアセチルアセトナート)銀(I)錯体、銅(I)ヘキサフルオロペンタンジオ
ナトシクロオクタジエン錯体などを例示することができる。
Claims (10)
- 基板上に下側ゲート電極を形成する工程と、
前記基板上に前記下側ゲート電極を覆うように犠牲層を形成する工程と、
前記犠牲層上に前記下側ゲート電極と交差する半導体層を形成する工程と、
前記犠牲層を除去する工程と、
前記犠牲層を除去して得られた前記下側ゲート電極と前記半導体層との隙間に液体材料を用いて下側ゲート絶縁層を形成する工程と、
前記半導体層上に液体材料を用いて上側ゲート絶縁層を形成する工程と、
前記上側ゲート絶縁層上に前記下側ゲート電極と前記半導体層の両側で接続される上側ゲート電極を形成する工程と、
を含む半導体装置の製造方法。 - 基板上に下側ゲート電極を形成する工程と、
前記基板上に前記下側ゲート電極を覆うように犠牲層を形成する工程と、
前記犠牲層上に前記下側ゲート電極と交差する半導体層を形成する工程と、
前記犠牲層を除去し、前記下側ゲート電極と前記半導体層との間に隙間を形成する工程と、
前記隙間と前記半導体層上とに液体材料を用いてゲート絶縁層を形成する工程と、
前記半導体層上の前記ゲート絶縁層上に前記下側ゲート電極と前記半導体層の両側で接続される上側ゲート電極を形成する工程と、
を含む半導体装置の製造方法。 - 前記基板がガラス基板又は樹脂基板である請求項1又は2に記載の半導体装置の製造方法。
- 前記各ゲート絶縁膜は前記半導体層の熱酸化膜で形成される、請求項1乃至3のいずれかに記載の半導体装置の製造方法。
- 前記下側ゲート電極は液滴吐出法で形成される、請求項1乃至4のいずれかに記載の半導体装置の製造方法。
- 前記犠牲層は有機膜である、請求項1乃至5のいずれかに記載の半導体装置の製造方法。
- 前記犠牲層は、前記基板又は該基板上に形成される下地絶縁膜、前記下側ゲート電極膜及び前記半導体層に対して除去時に所要の選択比が得られる材料である、請求項1乃至6のいずれかに記載の半導体装置の製造方法。
- 前記犠牲層は液滴吐出法で形成される、請求項1乃至7のいずれかに記載の半導体装置の製造方法。
- 前記半導体層は液滴吐出法で形成される、請求項1乃至8のいずれかに記載の半導体装置の製造方法。
- 前記半導体層に前記上側ゲート電極をマスクにしてイオン打ち込みにより、ソース領域及びドレイン領域が形成される、請求項1乃至9のいずれかに記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005375966A JP4525928B2 (ja) | 2005-12-27 | 2005-12-27 | 半導体装置の製造方法 |
US11/564,460 US7585717B2 (en) | 2005-12-27 | 2006-11-29 | Method of manufacturing semiconductor device, semiconductor device and electronic apparatus therefore |
KR1020060133883A KR20070069057A (ko) | 2005-12-27 | 2006-12-26 | 반도체 장치의 제조 방법, 반도체 장치 및 전자 기기 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005375966A JP4525928B2 (ja) | 2005-12-27 | 2005-12-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007180214A JP2007180214A (ja) | 2007-07-12 |
JP4525928B2 true JP4525928B2 (ja) | 2010-08-18 |
Family
ID=38194359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005375966A Expired - Fee Related JP4525928B2 (ja) | 2005-12-27 | 2005-12-27 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7585717B2 (ja) |
JP (1) | JP4525928B2 (ja) |
KR (1) | KR20070069057A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2932609B1 (fr) * | 2008-06-11 | 2010-12-24 | Commissariat Energie Atomique | Transistor soi avec plan de masse et grille auto-alignes et oxyde enterre d'epaisseur variable |
CN108321189A (zh) * | 2017-01-17 | 2018-07-24 | 上海和辉光电有限公司 | 一种薄膜晶体管及其制备方法 |
US10811601B2 (en) * | 2019-01-22 | 2020-10-20 | Northrop Grumman Systems Corporation | Semiconductor devices using insulator-metal phase change materials and method for fabrication |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006736A (ja) * | 1993-09-17 | 2004-01-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190854A (ja) * | 1992-01-13 | 1993-07-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0621455A (ja) * | 1992-06-30 | 1994-01-28 | Sanyo Electric Co Ltd | 薄膜トランジスタ |
KR960002088B1 (ko) | 1993-02-17 | 1996-02-10 | 삼성전자주식회사 | 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법 |
JP3499859B2 (ja) | 1993-09-17 | 2004-02-23 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3253808B2 (ja) * | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
KR100363332B1 (en) | 2001-05-23 | 2002-12-05 | Samsung Electronics Co Ltd | Method for forming semiconductor device having gate all-around type transistor |
KR100481209B1 (ko) * | 2002-10-01 | 2005-04-08 | 삼성전자주식회사 | 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
JP2005123404A (ja) | 2003-10-16 | 2005-05-12 | Fujitsu Ltd | トランジスタ及びその製造方法 |
JP3962009B2 (ja) | 2003-12-05 | 2007-08-22 | 株式会社東芝 | 半導体装置の製造方法 |
JP4432478B2 (ja) | 2003-12-05 | 2010-03-17 | ソニー株式会社 | 筒状分子の製造方法および筒状分子構造、並びに表示装置および電子素子 |
KR100526887B1 (ko) | 2004-02-10 | 2005-11-09 | 삼성전자주식회사 | 전계효과 트랜지스터 및 그의 제조방법 |
KR100574317B1 (ko) | 2004-02-19 | 2006-04-26 | 삼성전자주식회사 | 게이트 구조물, 이를 갖는 반도체 장치 및 그 형성 방법 |
-
2005
- 2005-12-27 JP JP2005375966A patent/JP4525928B2/ja not_active Expired - Fee Related
-
2006
- 2006-11-29 US US11/564,460 patent/US7585717B2/en not_active Expired - Fee Related
- 2006-12-26 KR KR1020060133883A patent/KR20070069057A/ko not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006736A (ja) * | 1993-09-17 | 2004-01-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2007180214A (ja) | 2007-07-12 |
US20070148839A1 (en) | 2007-06-28 |
US7585717B2 (en) | 2009-09-08 |
KR20070069057A (ko) | 2007-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW501282B (en) | Method of manufacturing semiconductor device | |
JP4042098B2 (ja) | デバイスの製造方法 | |
JP5064689B2 (ja) | 半導体基板の埋設分離領域を形成する方法及び埋設分離領域をもつ半導体デバイス | |
JP5150555B2 (ja) | キャパシタ及び薄膜トランジスタを有する基板、これを具備した平板ディスプレイ装置及び該キャパシタ及び薄膜トランジスタを有する基板の製造方法 | |
JP4095074B2 (ja) | 半導体素子製造方法 | |
KR20030029101A (ko) | 박막 트랜지스터를 제작하는 방법 | |
JPWO2016175086A1 (ja) | 半導体装置及びその製造方法 | |
KR100640211B1 (ko) | 액정표시장치의 제조방법 | |
JP4525928B2 (ja) | 半導体装置の製造方法 | |
CN107910351B (zh) | Tft基板的制作方法 | |
KR102103428B1 (ko) | 박막 트랜지스터를 제조하는 방법, 박막 트랜지스터 및 디스플레이 장치 | |
KR100946809B1 (ko) | 박막트랜지스터 및 그의 제조방법 | |
TWI715344B (zh) | 主動元件基板及其製造方法 | |
WO2022077708A1 (zh) | 显示面板及其制作方法 | |
CN109037241B (zh) | Ltps阵列基板及其制造方法、显示面板 | |
JP2007109733A (ja) | 半導体装置および半導体装置の製造方法 | |
TWI272443B (en) | Method of manufacturing substrate for display and method of manufacturing display utilizing the same | |
JP2005236186A (ja) | 半導体装置とその製造方法並びに電子機器 | |
TWI594440B (zh) | 薄膜電晶體、薄膜電晶體的製造方法及陣列基板的製造方法 | |
KR100580825B1 (ko) | 액티브 메트릭스 기판 제조방법 및 이에 의해 제조되는 게이트 | |
JP2009252887A (ja) | 薄膜トランジスタ及びその製造方法 | |
JP2007109731A (ja) | 半導体装置の製造方法、半導体装置、電気光学装置および電子機器 | |
KR20070006052A (ko) | 반도체소자의 논-살리사이드 형성 방법 | |
TWI434356B (zh) | 顯示裝置及其形成方法,以及包含顯示裝置之電子裝置 | |
JP2009267296A (ja) | 金属配線の製造方法、tftの製造方法、及びそれを用いて製造されたtft |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100203 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100209 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100409 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100512 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130611 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100525 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130611 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |