JP5064689B2 - 半導体基板の埋設分離領域を形成する方法及び埋設分離領域をもつ半導体デバイス - Google Patents
半導体基板の埋設分離領域を形成する方法及び埋設分離領域をもつ半導体デバイス Download PDFInfo
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- JP5064689B2 JP5064689B2 JP2006018863A JP2006018863A JP5064689B2 JP 5064689 B2 JP5064689 B2 JP 5064689B2 JP 2006018863 A JP2006018863 A JP 2006018863A JP 2006018863 A JP2006018863 A JP 2006018863A JP 5064689 B2 JP5064689 B2 JP 5064689B2
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Description
105A:酸素リッチ層
165:IV族半導体層
170:ソース
175:ドレイン
180:チャネル領域
185:電界効果トランジスタ
190:トレンチ分離
195:ゲート誘電体
200:ゲート電極
205:絶縁側壁スペーサ
210:絶縁キャッピング層
Claims (27)
- 半導体構造を形成する方法であって、
(a)単結晶シリコン基板を用意するステップと、
(b)前記基板の上面にハードマスク層を形成するステップと、
(c)光リソグラフィ・プロセスを行わずに、マスキング・パターンをもつナノマスク層を前記ハードマスク層の上面に形成するステップと、
(d)前記マスキング・パターンを前記ハードマスク層にエッチングして、パターン化されたハードマスク層の上面から前記基板の上面まで延びる開口部を、該開口部又は該開口部間の隔たり、若しくは該開口部と該開口部間の隔たりとの両方がパターン化されたハードマスク層の上面に平行に延びる少なくとも1つの空間的広がり(spatial extent)を個別に有する形態で、パターン化されたハードマスク層を形成するステップと、
(e)前記ナノマスク層を除去した後に、前記パターン化されたハードマスク層の開口部を埋める単結晶IV族半導体層を、前記パターン化されたハードマスク層の上面に形成するステップと、
を含む方法。 - 前記単結晶IV族半導体層が、エピタキシャルシリコン、エピタキシャルゲルマニウム、又はシリコンとゲルマニウムのエピタキシャル混合物を堆積することによって形成されることを特徴とする請求項1に記載の方法。
- (f)前記IV族半導体層をアニーリングするステップをさらに含む、請求項1に記載の方法。
- (f)前記単結晶IV族半導体層の上面を平坦化するために化学機械研磨を行うステップをさらに含む、請求項1に記載の方法。
- 前記パターン化されたハードマスク層がハードマスクのアイランドを含むか、又は前記開口部が前記パターン化されたハードマスク層内における穴であることを特徴とする請求項1に記載の方法。
- 前記パターン化されたハードマスク層の上面が、前記単結晶IV族半導体層の上面より約20ナノメートル乃至約300ナノメートル下にあることを特徴とする請求項1に記載の方法。
- 前記ナノマスク層が2つ又はそれ以上の異なるポリマーを含むブロックコポリマー層からなり、該ブロックコポリマー層から前記ポリマーのうちの1つの全て又は一部が除去されることを特徴とする請求項1に記載の方法。
- 前記ナノマスク層がナノ結晶を含むことを特徴とする請求項1に記載の方法。
- 前記単結晶IV族半導体層の上面にゲート誘電体を形成するステップと、
前記ゲート誘電体の上面にゲート電極を形成するステップと、
前記ゲート電極の両側において前記単結晶IV族半導体層にソース及びドレインを形成するステップと、
をさらに含む、請求項1に記載の方法。 - 前記ステップ(b)と前記ステップ(c)との間で、前記ソース及び前記ドレインの形成のために確保された前記単結晶IV族半導体層の領域上の前記ハードマスク層の上面に保護層を形成するステップをさらに含み、前記保護層は、前記マスキング・パターンが前記ハードマスク層に転写されるのを防止することを特徴とする請求項9に記載の方法。
- 前記少なくとも1つの空間的広がりが、約2ナノメートル乃至約100ナノメートルであることを特徴とする請求項1に記載の方法。
- 前記単結晶IV族半導体層がSixGeyを含み、ここでx=0から1及びy=x−1であることを特徴とする請求項1に記載の方法。
- 半導体構造を形成する方法であって、
(a)単結晶シリコン基板を用意するステップと、
(b)前記基板の上面にダミー・ゲートを形成するステップと、
(c)光リソグラフィ・プロセスを行わずに、マスキング・パターンをもつナノマスク層を前記基板の上面及び前記ダミー・ゲートの上面に形成するステップと、
(d)前記ダミー・ゲートによって前記基板がカバーされていない場所で前記マスキング・パターンを前記基板にエッチングして、前記基板の上面から所定の距離だけ前記基板の中に延びる開口部を、該開口部又は該開口部間の隔たり、若しくは該開口部と該開口部間の隔たりとの両方が前記パターン化された層の上面に平行に延びる少なくとも1つの空間的広がりを個別に有する形態で、前記基板にパターン化されたシリコン領域を形成するステップと、
(e)前記ナノマスク層を除去した後に、前記基板の上面及び前記開口部の側壁に保護層を形成するステップと、
(f)前記開口部の底面において露出された前記基板を酸化させて、パターン化された埋設二酸化ケイ素層を形成するステップと、
(g)前記開口部の前記側壁から前記保護層を除去するステップと、
(h)前記開口部を単結晶IV族半導体材料で埋めるステップと、
を含む方法。 - 前記ステップ(h)が、前記開口部にポリ−SixGey、ここでx=0から1及びy=x−1、を選択的に堆積させ、前記SixGeyをアニーリングすることを含む、請求項13に記載の方法。
- 前記開口部が、エピタキシャルSixGeyを前記開口部に堆積させることによって、単結晶SixGey、ここでx=0から1及びy=x−1、で埋められることを特徴とする請求項13に記載の方法。
- 前記基板の前記ダミー・ゲートの両側にソース及びドレインを形成するステップと、
前記ダミー・ゲート及び前記ダミー・ゲートによってカバーされない前記基板の上面に平坦化層を形成するステップと、
前記平坦化層の上面と前記ダミー・ゲートの上面を共面化するステップと、前記ダミー・ゲートを除去するステップと、
前記ダミー・ゲートを除去することによって露出された前記基板の上面にゲート誘電体を形成するステップと、
前記ソース及び前記ドレインと自己位置合わせするゲート電極を前記ゲート誘電体の上面に形成するステップと、
をさらに含む、請求項13に記載の方法。 - 前記パターン化された埋設二酸化ケイ素層が前記ソース及び前記ドレインの下に延びることを特徴とする請求項16に記載の方法。
- 前記パターン化された埋設二酸化ケイ素層が前記ゲート電極の下に完全には延びないことを特徴とする請求項16に記載の方法。
- 前記ステップ(a)の前に、前記基板に埋設された酸素リッチ層を形成することをさらに含む、請求項13に記載の方法。
- 前記開口部が、前記基板の上面から前記酸素リッチ層に延びることを特徴とする請求項19に記載の方法。
- 半導体構造を形成する方法であって、
(a)単結晶シリコン基板を用意するステップと、
(b)前記基板の上面にダミー・ゲートを形成するステップと、
(c)光リソグラフィ・プロセスを行わずに、マスキング・パターンをもつナノマスク層を前記基板の上面及び前記ダミー・ゲートの上面に形成するステップと、
(d)前記ダミー・ゲートによって前記基板がカバーされていない場所で前記マスキング・パターンを前記基板にエッチングして、前記基板の上面から所定の距離だけ前記基板の中に延びる開口部を、該開口部又は該開口部間の隔たり、若しくは該開口部と前記該開口部間の隔たりとの両方が前記パターン化された層の上面に平行に延びる少なくとも1つの空間的広がりを個別に有する形態で、前記基板に形成するステップと、
(e)前記基板をアニーリングして、前記基板の上面に隣接してシリコンをリフローさせ、前記基板の上面から前記開口部を埋設間隙に合体させるステップと、
を含む方法。 - 前記基板の前記ダミー・ゲートの両側にソース及びドレインを形成するステップと、
前記ダミー・ゲート及び前記ダミー・ゲートによってカバーされない前記基板の上面に平坦化層を形成するステップと、
前記平坦化層の上面と前記ダミー・ゲートの上面を共面化するステップと、
前記ダミー・ゲートを除去するステップと、
前記ダミー・ゲートを除去することによって露出された前記基板の上面にゲート誘電体を形成するステップと、
前記ソース及び前記ドレインと自己位置合わせするゲート電極を前記ゲート誘電体の上面に形成するステップと、
をさらに含む、請求項21に記載の方法。 - 前記1つ又はそれ以上の埋設間隙が前記ソースの下に延び、1つ又はそれ以上の埋設間隙
が前記ドレインの下に延びることを特徴とする請求項22に記載の方法。 - 半導体構造であって、
シリコン下層と、前記シリコン下層の上面上のパターン化された埋設酸化物層とを含み、
前記パターン化された埋設酸化物層が開口部を有し、該開口部が前記パターン化された埋設酸化物層を通って延び、かつ、単結晶IV族半導体材料で埋められており、前記パターン化された埋設酸化物層の上に単結晶IV族半導体層があり、前記開口部の幅又は前記開口部間の隔たり、若しくは前記開口部と前記開口部間の隔たりとの両方が、光リソグラフィにより画定可能な寸法より小さい少なくとも1つの空間的広がりを個別に有し、前記少なくとも1つの空間的広がりが基板の上面に平行に延びるようにされた基板と、
前記シリコン基板の上面のゲート誘電体と、
前記ゲート誘電体の上面のゲート電極と、
前記基板に形成された前記ゲート電極の両側のソース及びドレインと、
を含む半導体構造。 - 前記パターン化された埋設酸化物層が、前記ソース及び前記ドレインの下では延びないが前記ゲート電極の下では延びることを特徴とする請求項24に記載の構造。
- 前記パターン化された埋設酸化物層が、前記ゲート電極の下に延び、かつ前記ソース及び前記ドレインの下に部分的に延びることを特徴とする請求項24に記載の構造。
- 前記ソース及び前記ドレインの下に延びる連続埋設酸化物層をさらに含み、前記パターン化された埋設酸化物層が前記ゲート電極の下に延びることを特徴とする請求項24に記載の構造。
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US10700263B2 (en) | 2018-02-01 | 2020-06-30 | International Business Machines Corporation | Annealed seed layer for magnetic random access memory |
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TWI374507B (en) | 2012-10-11 |
US7071047B1 (en) | 2006-07-04 |
US20080128811A1 (en) | 2008-06-05 |
CN1828861A (zh) | 2006-09-06 |
US20060172479A1 (en) | 2006-08-03 |
US7352030B2 (en) | 2008-04-01 |
TW200711004A (en) | 2007-03-16 |
JP2006210927A (ja) | 2006-08-10 |
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