FR3000235B1 - Procede de fabrication de masques nanolithographiques - Google Patents
Procede de fabrication de masques nanolithographiquesInfo
- Publication number
- FR3000235B1 FR3000235B1 FR1262610A FR1262610A FR3000235B1 FR 3000235 B1 FR3000235 B1 FR 3000235B1 FR 1262610 A FR1262610 A FR 1262610A FR 1262610 A FR1262610 A FR 1262610A FR 3000235 B1 FR3000235 B1 FR 3000235B1
- Authority
- FR
- France
- Prior art keywords
- film
- copolymer
- manufacturing
- pmma
- irradiated zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Abstract
L'invention concerne un procédé de fabrication de masques de nanolithographie, à partir d'un film (20) de copolymère à blocs de PS-b-PMMA déposé sur une surface (10) à graver, ledit film de copolymère comprenant des nanodomaines de PMMA (21) orientés perpendiculairement à la surface à graver, ledit procédé étant caractérisé en ce qu'il comprend les étapes suivantes : - irradier (E1) en partie ledit film de copolymère pour former une première zone irradiée et une deuxième zone non irradiée dans ledit film de copolymère, puis - traiter (E2) ledit film de copolymère dans un solvant développeur pour retirer, de manière sélective, au moins lesdits nanodomaines de PMMA de ladite première zone irradiée dudit film de copolymère.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1262610A FR3000235B1 (fr) | 2012-12-21 | 2012-12-21 | Procede de fabrication de masques nanolithographiques |
PCT/FR2013/053102 WO2014096662A1 (fr) | 2012-12-21 | 2013-12-16 | Procede de fabrication de masque de nanolithographie |
JP2015548711A JP6324991B2 (ja) | 2012-12-21 | 2013-12-16 | ナノリソグラフィーマスクの製造方法 |
KR1020157013562A KR101709028B1 (ko) | 2012-12-21 | 2013-12-16 | 나노리소그래피 마스크의 제조 방법 |
EP13818313.2A EP2936249A1 (fr) | 2012-12-21 | 2013-12-16 | Procede de fabrication de masque de nanolithographie |
US14/654,277 US9599890B2 (en) | 2012-12-21 | 2013-12-16 | Method for manufacturing a nanolithography mask |
SG11201504292QA SG11201504292QA (en) | 2012-12-21 | 2013-12-16 | Method for manufacturing a nanolithography mask |
CN201380067287.3A CN104885013B (zh) | 2012-12-21 | 2013-12-16 | 用于制造纳米光刻掩模的方法 |
TW102146664A TWI557172B (zh) | 2012-12-21 | 2013-12-17 | 製造奈米微影遮罩之方法 |
JP2018024900A JP2018117132A (ja) | 2012-12-21 | 2018-02-15 | ナノリソグラフィーマスクの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1262610A FR3000235B1 (fr) | 2012-12-21 | 2012-12-21 | Procede de fabrication de masques nanolithographiques |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3000235A1 FR3000235A1 (fr) | 2014-06-27 |
FR3000235B1 true FR3000235B1 (fr) | 2016-06-24 |
Family
ID=48741226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1262610A Expired - Fee Related FR3000235B1 (fr) | 2012-12-21 | 2012-12-21 | Procede de fabrication de masques nanolithographiques |
Country Status (9)
Country | Link |
---|---|
US (1) | US9599890B2 (fr) |
EP (1) | EP2936249A1 (fr) |
JP (2) | JP6324991B2 (fr) |
KR (1) | KR101709028B1 (fr) |
CN (1) | CN104885013B (fr) |
FR (1) | FR3000235B1 (fr) |
SG (1) | SG11201504292QA (fr) |
TW (1) | TWI557172B (fr) |
WO (1) | WO2014096662A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6023010B2 (ja) * | 2013-06-26 | 2016-11-09 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
CN105446074B (zh) * | 2014-08-22 | 2019-09-06 | 中芯国际集成电路制造(上海)有限公司 | 使用激光定向自组装嵌段共聚物的方法 |
TWI610392B (zh) * | 2016-09-05 | 2018-01-01 | Daxin Mat Corp | 光電元件的製備方法 |
JP6860276B2 (ja) * | 2016-09-09 | 2021-04-14 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
GB201804010D0 (en) * | 2018-03-13 | 2018-04-25 | Univ Kyoto | Structured nanoporous materials, manufacture of structured nanoporous materials and applications of structured nanoporous materials |
KR20220041153A (ko) * | 2019-08-29 | 2022-03-31 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 전자 디바이스의 제조 방법 |
DE102020124247A1 (de) * | 2019-10-31 | 2021-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fotolackentwickler und verfahren zum entwickeln von fotolack |
WO2024150636A1 (fr) * | 2023-01-10 | 2024-07-18 | 富士フイルム株式会社 | Liquide de traitement, et corps d'admission de liquide de traitement |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
WO2002073699A2 (fr) | 2001-03-14 | 2002-09-19 | University Of Massachusetts | Nanofabrication |
JP3798641B2 (ja) * | 2001-03-23 | 2006-07-19 | 株式会社東芝 | ナノパターン形成方法および電子部品の製造方法 |
US8993221B2 (en) * | 2012-02-10 | 2015-03-31 | Pixelligent Technologies, Llc | Block co-polymer photoresist |
US7071047B1 (en) * | 2005-01-28 | 2006-07-04 | International Business Machines Corporation | Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions |
US7407554B2 (en) * | 2005-04-12 | 2008-08-05 | International Business Machines Corporation | Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent |
US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
KR101602942B1 (ko) * | 2009-10-07 | 2016-03-15 | 삼성전자주식회사 | 패턴 형성 방법 |
WO2011094597A2 (fr) * | 2010-02-01 | 2011-08-04 | The Regents Of The University Of California | Nanomaille en graphène et son procédé de fabrication |
US9388268B2 (en) | 2010-10-11 | 2016-07-12 | Wisconsin Alumni Research Foundation | Patternable polymer block brush layers |
US9060415B2 (en) | 2011-02-15 | 2015-06-16 | Riken | Method for producing substrate having surface nanostructure |
JP5708521B2 (ja) * | 2011-02-15 | 2015-04-30 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
CN104465523B (zh) * | 2013-09-24 | 2017-08-25 | 中芯国际集成电路制造(北京)有限公司 | 闪存存储器的制造方法 |
-
2012
- 2012-12-21 FR FR1262610A patent/FR3000235B1/fr not_active Expired - Fee Related
-
2013
- 2013-12-16 WO PCT/FR2013/053102 patent/WO2014096662A1/fr active Application Filing
- 2013-12-16 SG SG11201504292QA patent/SG11201504292QA/en unknown
- 2013-12-16 US US14/654,277 patent/US9599890B2/en active Active
- 2013-12-16 JP JP2015548711A patent/JP6324991B2/ja not_active Expired - Fee Related
- 2013-12-16 EP EP13818313.2A patent/EP2936249A1/fr not_active Withdrawn
- 2013-12-16 CN CN201380067287.3A patent/CN104885013B/zh not_active Expired - Fee Related
- 2013-12-16 KR KR1020157013562A patent/KR101709028B1/ko active IP Right Grant
- 2013-12-17 TW TW102146664A patent/TWI557172B/zh not_active IP Right Cessation
-
2018
- 2018-02-15 JP JP2018024900A patent/JP2018117132A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2014096662A1 (fr) | 2014-06-26 |
CN104885013B (zh) | 2019-06-25 |
KR101709028B1 (ko) | 2017-02-21 |
US9599890B2 (en) | 2017-03-21 |
EP2936249A1 (fr) | 2015-10-28 |
CN104885013A (zh) | 2015-09-02 |
JP2018117132A (ja) | 2018-07-26 |
TW201441292A (zh) | 2014-11-01 |
TWI557172B (zh) | 2016-11-11 |
SG11201504292QA (en) | 2015-07-30 |
FR3000235A1 (fr) | 2014-06-27 |
KR20150088799A (ko) | 2015-08-03 |
JP2016516288A (ja) | 2016-06-02 |
US20150331313A1 (en) | 2015-11-19 |
JP6324991B2 (ja) | 2018-05-16 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 9 |
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PLFP | Fee payment |
Year of fee payment: 10 |
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ST | Notification of lapse |
Effective date: 20230808 |