ATE537484T1 - Systeme und verfahren zur uv-lithographie - Google Patents

Systeme und verfahren zur uv-lithographie

Info

Publication number
ATE537484T1
ATE537484T1 AT07447013T AT07447013T ATE537484T1 AT E537484 T1 ATE537484 T1 AT E537484T1 AT 07447013 T AT07447013 T AT 07447013T AT 07447013 T AT07447013 T AT 07447013T AT E537484 T1 ATE537484 T1 AT E537484T1
Authority
AT
Austria
Prior art keywords
lithographic
mask
design
lithographic mask
designing
Prior art date
Application number
AT07447013T
Other languages
English (en)
Inventor
Gian Francescco Lorusso
Sung Kim In
Kim Byeongsoo
Anne-Marie Goethals
Rik Jonckheere
Jan Hermans
Original Assignee
Imec
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec, Samsung Electronics Co Ltd filed Critical Imec
Application granted granted Critical
Publication of ATE537484T1 publication Critical patent/ATE537484T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07447013T 2007-02-23 2007-02-23 Systeme und verfahren zur uv-lithographie ATE537484T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07447013A EP1962138B1 (de) 2007-02-23 2007-02-23 Systeme und Verfahren zur UV-Lithographie

Publications (1)

Publication Number Publication Date
ATE537484T1 true ATE537484T1 (de) 2011-12-15

Family

ID=38180134

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07447013T ATE537484T1 (de) 2007-02-23 2007-02-23 Systeme und verfahren zur uv-lithographie

Country Status (5)

Country Link
US (1) US8006202B2 (de)
EP (1) EP1962138B1 (de)
JP (1) JP2008219004A (de)
KR (1) KR101472902B1 (de)
AT (1) ATE537484T1 (de)

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NL2007287A (en) * 2010-09-14 2012-03-15 Asml Netherlands Bv Correction for flare effects in lithography system.
US8601404B2 (en) * 2011-03-14 2013-12-03 Synopsys, Inc. Modeling EUV lithography shadowing effect
JP2013115304A (ja) * 2011-11-30 2013-06-10 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
WO2015067443A1 (en) * 2013-11-05 2015-05-14 Asml Netherlands B.V. Method of characterising, method of forming a model, method of simulating, mask manufacturing method and device manufacturing method
KR102225619B1 (ko) 2015-02-10 2021-03-12 한화테크윈 주식회사 고속직렬데이터수신장치
US11561477B2 (en) * 2017-09-08 2023-01-24 Asml Netherlands B.V. Training methods for machine learning assisted optical proximity error correction
DE102017219217B4 (de) * 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens
WO2019218698A1 (zh) * 2018-05-15 2019-11-21 Xiong Xiangwen 3D立体照射掩膜版(Mask)的极紫外光刻(EUVL)的高产量(HVM)曝光技术及系统装置
TWI794544B (zh) * 2018-10-09 2023-03-01 荷蘭商Ａｓｍｌ荷蘭公司 用於高數值孔徑穿縫源光罩最佳化之方法
CN119376194B (zh) * 2024-12-26 2025-05-16 苏州镁伽科技有限公司 一种套刻测量方法、装置、设备及存储介质

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656399A (en) * 1996-01-22 1997-08-12 Lucent Technologies Inc. Process for making an x-ray mask
US5798936A (en) * 1996-06-21 1998-08-25 Avant| Corporation Congestion-driven placement method and computer-implemented integrated-circuit design tool
JP4302809B2 (ja) 1999-02-12 2009-07-29 富士通マイクロエレクトロニクス株式会社 リソグラフィ用データ補正装置及びその装置での処理をコンピュータにて行なわせるためのプログラムを格納した記録媒体
US6370673B1 (en) * 1999-03-22 2002-04-09 Synopsys, Inc. Method and system for high speed detailed placement of cells within an integrated circuit design
DE10123768C2 (de) * 2001-05-16 2003-04-30 Infineon Technologies Ag Verfahren zur Herstellung einer lithographischen Reflexionsmaske insbesondere für die Strukturierung eines Halbleiterwafers sowie Reflexionsmaske
DE10134231B4 (de) * 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US7197734B1 (en) * 2002-07-12 2007-03-27 Altera Corporation Method and apparatus for designing systems using logic regions
US7042550B2 (en) * 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
US7022443B2 (en) * 2003-02-12 2006-04-04 Intel Corporation Compensation of reflective mask effects in lithography systems
US7594204B1 (en) * 2003-10-06 2009-09-22 Altera Corporation Method and apparatus for performing layout-driven optimizations on field programmable gate arrays
SG124407A1 (en) * 2005-02-03 2006-08-30 Asml Netherlands Bv Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus
US7752588B2 (en) * 2005-06-29 2010-07-06 Subhasis Bose Timing driven force directed placement flow
WO2007002799A1 (en) * 2005-06-29 2007-01-04 Lightspeed Logic, Inc. Methods and systems for placement
US7574685B1 (en) * 2006-04-24 2009-08-11 Cadence Design Systems, Inc. Method, system, and article of manufacture for reducing via failures in an integrated circuit design
US8332793B2 (en) * 2006-05-18 2012-12-11 Otrsotech, Llc Methods and systems for placement and routing

Also Published As

Publication number Publication date
KR101472902B1 (ko) 2014-12-16
KR20080078608A (ko) 2008-08-27
US8006202B2 (en) 2011-08-23
JP2008219004A (ja) 2008-09-18
US20080229273A1 (en) 2008-09-18
EP1962138B1 (de) 2011-12-14
EP1962138A1 (de) 2008-08-27

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