JP3962009B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Description
J.P.Colinge et al.,「SILICON-ON-INSULATOR "GATE-ALL-AROUND DEVICE"」, IEDM 1990, 25.4, p.595-598 Fu-Liang Yang et al.,「25 nm CMOS Omega FETs」, IEDM 2002, 10.3, p.255-258
図1は第1の実施形態に係る半導体装置の基本的な構成を示した斜視図、図2は図1に示した半導体装置の平面図である。図3(a)は図2のA−A’に沿った断面図、図3(b)は図2のB−B’に沿った断面図、図3(c)は図2のC−C’に沿った断面図である。なお、図1では、構造の理解を容易にするため、ゲート電極を他の構造から離して描いているが、実際にはゲート電極は他の構造に接している。また、図1及び図3(a)〜図3(c)では、図2に示したコンタクトや配線等は描いていない。
図17は第2の実施形態に係る半導体装置の構成を示した斜視図、図18は図17に示した半導体装置の平面図である。図19(a)は図18のA−A’に沿った断面図、図19(b)は図18のB−B’に沿った断面図、図19(c)は図18のC−C’に沿った断面図、図19(d)は図18のD−D’に沿った断面図である。なお、図17では、構造の理解を容易にするため、ゲート電極を他の構造から離して描いているが、実際にはゲート電極は他の構造に接している。また、図17及び図19(a)〜図19(d)では、図18に示したコンタクトや配線等は描いていない。なお、本実施形態の基本的な構成は第1の実施形態と同様であり、第1の実施形態の構成要素に対応する構成要素については同一の参照番号を付し、それらの詳細な説明は省略する。
図20及び図21はいずれも、本実施形態に係る半導体装置の構成例を示した平面図である。図20に示した半導体装置の基本的な構成は第1の実施形態の構成に対応し、図21に示した半導体装置の基本的な構成は第2の実施形態の構成に対応している。したがって、各構成要素の詳細な説明は省略する。
図22及び図23はいずれも、本実施形態に係る半導体装置の構成例を示した平面図である。図22に示した半導体装置の基本的な構成は第1の実施形態の構成に対応し、図23に示した半導体装置の基本的な構成は第2の実施形態の構成に対応している。したがって、各構成要素の詳細な説明は省略する。
図24は、第1或いは第2の実施形態で示したようなトランジスタ構造をトレンチ型キャパシタ構造を有するDRAMに適用した場合の一例を示した断面図である。
図25は、第1或いは第2の実施形態で示したようなトランジスタ構造をスタック型キャパシタ構造を有するDRAMに適用した場合の一例を示した断面図である。
103…半導体構造 103a、103b、103c…半導体部分
104…熱酸化膜 105…シリコン窒化膜
106…ダミーゲート絶縁膜 108…ダミーゲート電極
109…シリコン酸化膜 110…シリコン窒化膜
111a…低濃度のソース領域 111b…低濃度のドレイン領域
112…シリコン酸化膜 113a…高濃度のソース領域
113b…高濃度のドレイン領域 114…層間絶縁膜
115…ゲート絶縁膜 116…ゲート電極
116a、116b…電極部分 117…層間絶縁膜
118…コンタクトプラグ 119…配線
120…凹部 151…熱酸化膜
161…レジストパターン
Claims (1)
- 下地絶縁膜上に、第1の半導体部分と、第2の半導体部分と、前記第1の半導体部分と第2の半導体部分との間の第3の半導体部分とを含む半導体構造を形成する工程と、
前記第3の半導体部分の上面及び側面を覆うダミー構造を形成する工程と、
前記ダミー構造をマスクとして前記半導体構造内に不純物のイオン注入を行い、ソース/ドレイン領域を形成する工程と、
前記第1の半導体部分の表面、前記第2の半導体部分の表面及び前記ダミー構造の側面を覆う絶縁部を形成する工程と、
前記ダミー構造を除去して、前記第3の半導体部分及び前記ダミー構造下の下地絶縁膜を露出させる工程と、
前記下地絶縁膜の露出した部分及び該露出した部分に隣接した部分をエッチングすることにより、前記下地絶縁膜に凹部を形成する工程と、
前記第3の半導体部分の上面及び側面を覆う第1の電極部分及び前記凹部内に形成された第2の電極部分を含むゲート電極を、前記第3の半導体部分と前記ゲート電極との間にゲート絶縁膜を介在させて形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2003407367A JP3962009B2 (ja) | 2003-12-05 | 2003-12-05 | 半導体装置の製造方法 |
US10/874,732 US6992358B2 (en) | 2003-12-05 | 2004-06-24 | Semiconductor device and method for manufacturing the same |
US11/289,279 US20060084215A1 (en) | 2003-12-05 | 2005-11-30 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003407367A JP3962009B2 (ja) | 2003-12-05 | 2003-12-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005167132A JP2005167132A (ja) | 2005-06-23 |
JP3962009B2 true JP3962009B2 (ja) | 2007-08-22 |
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JP4525928B2 (ja) | 2005-12-27 | 2010-08-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4496179B2 (ja) | 2006-03-13 | 2010-07-07 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
JP5161495B2 (ja) * | 2006-07-19 | 2013-03-13 | 株式会社東芝 | 不揮発性半導体記憶装置 |
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-
2003
- 2003-12-05 JP JP2003407367A patent/JP3962009B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-24 US US10/874,732 patent/US6992358B2/en not_active Expired - Fee Related
-
2005
- 2005-11-30 US US11/289,279 patent/US20060084215A1/en not_active Abandoned
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JP2005167132A (ja) | 2005-06-23 |
US20060084215A1 (en) | 2006-04-20 |
US6992358B2 (en) | 2006-01-31 |
US20050121703A1 (en) | 2005-06-09 |
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