WO2022077708A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

Info

Publication number
WO2022077708A1
WO2022077708A1 PCT/CN2020/130788 CN2020130788W WO2022077708A1 WO 2022077708 A1 WO2022077708 A1 WO 2022077708A1 CN 2020130788 W CN2020130788 W CN 2020130788W WO 2022077708 A1 WO2022077708 A1 WO 2022077708A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
display panel
manufacturing
hydrophobic
panel according
Prior art date
Application number
PCT/CN2020/130788
Other languages
English (en)
French (fr)
Inventor
胡小波
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2022077708A1 publication Critical patent/WO2022077708A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

Definitions

  • the present application relates to the field, and in particular, to a display panel and a manufacturing method thereof.
  • the adhesion with the glass substrate and the silicon-containing dielectric layer is poor. After the high temperature process, the film layer is prone to fall off.
  • the metal or alloy material is used to improve the adhesion between the copper film and the dielectric layer, but during the patterning process of the conductive layer, the metal or alloy with strong polarity has poor adhesion to the photoresist layer, and the photoresist layer is prone to appear. Accidentally falling off, resulting in a technical problem of low yield of the patterned conductive layer.
  • the present application provides a display panel and a manufacturing method thereof, so as to solve the problem that in the current patterning process of the conductive layer, the adhesion between the metal or alloy and the photoresist layer is poor, and the photoresist layer is prone to fall off unexpectedly, resulting in the patterned conductive layer.
  • a manufacturing method of a display panel comprising:
  • the metal thin film layer not covered by the hydrophobic layer is etched to form a first electrode layer.
  • the first electrode layer is a gate layer, or the first electrode layer is a source and drain layer.
  • the manufacturing method of the display panel further comprises:
  • the hydrophobic layer is peeled off by treating the hydrophobic layer with plasma gas.
  • the step of peeling off the hydrophobic layer includes:
  • the hydrophobic layer is treated with hydrogen plasma or oxygen plasma, so that the hydrophobic layer and hydrogen plasma or oxygen plasma form hydrocarbon gas or carbon oxygen gas, and the hydrophobic layer is peeled off.
  • the method further includes:
  • a pixel electrode layer is formed on the passivation layer.
  • the material of the passivation layer is a composite film layer of silicon dioxide and silicon nitride, and the silicon dioxide material is close to the side of the source and drain layers.
  • the step of forming the passivation layer includes:
  • a passivation layer including a plurality of fourth openings on the first electrode layer
  • the fourth opening penetrates through the passivation layer to expose the first electrode layer.
  • the first electrode layer includes a first barrier layer and a first metal thin film layer on the first barrier layer.
  • the material of the first barrier layer includes any one or a combination of molybdenum, titanium, tungsten, and tantalum.
  • the first electrode layer further includes a second barrier layer on the first metal thin film layer.
  • the material of the second barrier layer is any one or a combination of molybdenum, titanium, tungsten, and tantalum.
  • the step of removing the hydrophobic layer not covered by the photoresist pattern includes:
  • the plasma gas includes hydrogen plasma or oxygen plasma.
  • the material of the hydrophobic layer is any one or a combination of any one or more of double-layer graphene, triple-layer graphene, carbon fiber, and carbon nanotube.
  • the thickness of the metal thin film layer is 100 angstroms to 500 angstroms.
  • the metal thin film layer is a material of the source and drain layers, and before forming the metal thin film layer, the method further includes:
  • An active layer is formed on the gate insulating layer.
  • the step of patterning the photoresist layer to form a photoresist pattern includes:
  • the photoresist layer is subjected to a first patterning treatment, and a first pattern including a plurality of first openings is formed on the photoresist layer, and the first openings expose the hydrophobic layer .
  • the step of removing the hydrophobic layer not covered by the photoresist pattern includes:
  • the hydrophobic layer is subjected to a second patterning treatment to form a second pattern including a plurality of second openings on the hydrophobic layer;
  • one of the second openings corresponds to one of the first openings, and the second openings expose the metal thin film layer.
  • the thickness of the hydrophobic layer is less than 50 angstroms.
  • the present application also provides a display panel, which is formed by using the above-mentioned method for manufacturing a display panel.
  • the display panel further includes a passivation layer on the first electrode layer and a pixel electrode layer on the passivation layer.
  • the adhesion between the metal or alloy and the photoresist layer is enhanced, and the photoresist layer is prevented from accidentally falling off , the yield of the patterned metal thin film layer is improved, and the production quality of the display panel is improved.
  • FIG. 1 is a flow chart of steps of a manufacturing method of a display panel of the present application
  • FIG. 2 is a schematic diagram of the first structure in the manufacturing method of the display panel of the present application.
  • FIG. 3 is a schematic diagram of a second structure in the manufacturing method of the display panel of the present application.
  • FIG. 4 is a schematic diagram of a third structure in the manufacturing method of the display panel of the present application.
  • FIG. 5 is a schematic diagram of the fourth structure in the manufacturing method of the display panel of the present application.
  • FIG. 6 is a schematic diagram of a fifth structure in the manufacturing method of the display panel of the present application.
  • FIG. 7 is a schematic diagram of the sixth structure in the manufacturing method of the display panel of the present application.
  • FIG. 8 is a schematic diagram of a seventh structure in the manufacturing method of the display panel of the present application.
  • FIG. 9 is a schematic diagram of an eighth structure in the manufacturing method of the display panel of the present application.
  • FIG. 10 is a schematic diagram of a ninth structure in the manufacturing method of the display panel of the present application.
  • FIG. 11 is a schematic diagram of a tenth structure in the manufacturing method of the display panel of the present application.
  • FIG. 12 is a schematic diagram of an eleventh structure in the manufacturing method of the display panel of the present application.
  • FIG. 13 is a schematic diagram of the twelfth structure in the manufacturing method of the display panel of the present application.
  • FIG. 14 is a schematic diagram of the thirteenth structure in the manufacturing method of the display panel of the present application.
  • FIG. 15 is a schematic diagram of a fourteenth structure in the manufacturing method of the display panel of the present application.
  • the present application provides a display panel and a manufacturing method thereof.
  • the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.
  • the present application further discloses a manufacturing method of the display panel 100 , including:
  • the adhesion between the metal or alloy and the photoresist layer is enhanced, and the photoresist layer is prevented from accidentally falling off , the yield of the patterned metal thin film layer is improved, and the production quality of the display panel is improved.
  • the manufacturing method of the display panel 100 includes:
  • the metal thin film layer 601 is the material of the gate layer 300 or the material of the source and drain layers 600 , that is, the first electrode layer formed in step S500 is the gate layer or the source and drain layers, which is omitted here.
  • the following takes the metal thin film layer 601 as the material of the source and drain layers 600 as an example, that is, the first electrode layer is formed as the source and drain layers 600 for description.
  • the thickness of the metal thin film layer 601 is 100 angstroms to 500 angstroms.
  • the method before forming the source and drain layers 600, the method further includes:
  • the specific structure and fabrication method of the gate layer 300 are similar to those of the source-drain layer 600 . Please refer to the structure and method of the source-drain layer 600 . For details, please refer to FIGS. 2 to 8 . Repeat.
  • the material of the source-drain layer 600 includes any one or a combination of the following elements molybdenum, titanium, tungsten, and tantalum doped in the corresponding region in contact with the active layer 500 .
  • the content of doped elements in the corresponding regions gradually increases.
  • the adhesive force between the active layer 500 and the source and drain layers 600 is increased, the film layer peeling is reduced, and the electrical connection stability is increased.
  • the source/drain layer 600 is finally formed by patterning the metal thin film layer 601 as an example.
  • the source/drain layer 600 includes a first barrier layer 610 and is located in the first barrier layer.
  • the material of the first barrier layer 610 includes any one or a combination of molybdenum, titanium, tungsten, and tantalum.
  • the material of the first metal thin film layer 620 is any one or a combination of copper, aluminum and silver.
  • the first barrier layer 610 improves the adhesion between the source and drain layers 600 and the active layer 500 .
  • the source-drain layer 600 further includes a second barrier layer 630 located on the first metal thin film layer 620 , and the material of the second barrier layer 630 is any of molybdenum, titanium, tungsten, and tantalum a combination of one or more.
  • the first metal thin film layer 620 is located between the first barrier layer 610 and the second barrier layer 630 , please refer to FIG. 11 and FIG. 14 for details, the second barrier layer 630 improves the source and drain
  • the adhesion between the layer 600 and the photoresist layer during the patterning process prevents the photoresist layer from falling off and improves the precision of the patterning process.
  • step S200 includes:
  • the material of the hydrophobic layer 700 is any one or a combination of any one or more of double-layer graphene, triple-layer graphene, carbon fiber, and carbon nanotube.
  • the hydrophobic material has good adhesion with the photoresist layer.
  • the hydrophobic layer 700 can have better adhesion with the photoresist layer when the display panel 100 is fabricated, preventing the photoresist layer. The peeling of the layers improves the quality of the display panel 100 made.
  • double-layer graphene, triple-layer graphene, carbon fiber, and carbon nanotube are all good conductive and thermally conductive materials, which can better reduce resistance for the gate layer 300 or/and the source and drain layers 600 .
  • double-layer graphene, triple-layer graphene, carbon fiber, and carbon nanotube are all flexible materials, which can provide the flexible display panel 100 with better bending properties and reduce the bending stress of the overall display panel 100. When bent, it can still provide a reliable display effect.
  • the material of the photoresist layer 710 may be an organic photoresist material, which is used for patterning the hydrophobic layer 700 .
  • step S300 includes: performing a first patterning process on the photoresist layer 710 using an exposure and developing process, and forming a first pattern including a plurality of first openings 711 on the photoresist layer 710 .
  • the first opening 711 exposes the hydrophobic layer 700 , please refer to FIG. 4 for details.
  • plasma gas treatment is used to perform a second patterning treatment corresponding to the first patterning treatment on the hydrophobic layer 700 to form a pattern corresponding to the first pattern on the hydrophobic layer 700 .
  • Second pattern is used to perform a second patterning treatment corresponding to the first patterning treatment on the hydrophobic layer 700 to form a pattern corresponding to the first pattern on the hydrophobic layer 700 .
  • the hydrophobic layer 700 is treated with hydrogen plasma or oxygen plasma, so that part of the hydrophobic layer 700 and hydrogen plasma form hydrocarbon gas or hydrocarbon gas, so that the metal thin film layer is exposed and the hydrophobic layer 700 is exposed.
  • a second pattern corresponding to the first pattern is formed on the layer 700 .
  • step S400 includes: using plasma gas treatment to perform a second patterning treatment on the hydrophobic layer 700 to form a second pattern including a plurality of second openings 712 on the hydrophobic layer 700 .
  • one of the second openings 712 corresponds to one of the first openings 711 .
  • the second opening 712 exposes the metal thin film layer. Please refer to FIG. 5 for details.
  • the photoresist layer 710 and the hydrophobic layer 700 have good adhesion.
  • the photoresist layer 710 is prevented from lifting and falling off, thereby improving the accuracy of patterning and improving the
  • the adhesion between the source-drain layer 600 and the passivation layer 800 or some insulating layers prevents the film layers from falling off.
  • an etching process is used to perform a third patterning process corresponding to the first patterning process and the second patterning process on the metal thin film layer 601, so as to form a plurality of third patterning processes.
  • the source and drain layers 600 of the holes 930 are used to perform a third patterning process corresponding to the first patterning process and the second patterning process on the metal thin film layer 601, so as to form a plurality of third patterning processes.
  • the third patterning process uses an etching process, and an etching solution is used to etch the corresponding area of the metal thin film layer 601 to complete the third patterning process.
  • the third opening 930 penetrates through the source and drain layers 600 and exposes the active layer 500 of the display panel 100 . Please refer to FIG. 6 for details.
  • the third opening 930 is filled with the subsequent passivation layer 800 , please refer to FIGS. 9 to 15 for details.
  • step S500 it further includes:
  • the photoresist layer 710 is peeled off to expose the hydrophobic layer 700 . Please refer to FIG. 7 for details.
  • step S600 and after step S510 it may further include:
  • the gas processed by the plasma gas includes hydrogen plasma or oxygen plasma.
  • the hydrophobic layer 700 is treated with hydrogen plasma or oxygen plasma, so that the hydrophobic layer 700 and hydrogen plasma or oxygen plasma form hydrocarbon gas or carbon oxygen gas, and the material in the corresponding area of the hydrophobic layer 700 is vaporized, After volatilization, the hydrophobic layer 700 is peeled off.
  • FIG. 8 please refer to FIG. 8 .
  • the material of the passivation layer 800 is silicon dioxide or a composite film layer of silicon dioxide and silicon nitride, wherein the material of the passivation layer 800 is a composite film of silicon dioxide and silicon nitride When the film is formed, the silicon dioxide material is located on the side close to the source and drain layers 600 .
  • the third opening 930 of the source-drain layer 600 is in a direction away from the active layer 500 , and the area of the third opening 930 on the first cross section gradually increases, The first cross section is parallel to the display panel 100 .
  • the diameter of the second opening 712 of the hydrophobic layer 700 is smaller than the diameter of the third opening 930 near the source-drain layer 600 .
  • the structure of this embodiment can be formed by using an etching solution to form a structure like an “arrow”. Please refer to FIG. 12 to FIG. 15 for details.
  • the hydrophobic layer 700 strengthens the gap between the passivation layer 800 and the active layer 500
  • the fixing of the film improves the stability between the film layers and enhances the display stability of the display panel 100 .
  • a plurality of fourth openings 910 are included on the passivation layer 800 .
  • the fourth opening 910 penetrates the passivation layer 800 to expose the source and drain layers 600 , which facilitates the electrical connection between the pixel electrode layer 810 and the source and drain layers 600 in step S700 .
  • the fourth opening 910 penetrates the passivation layer 800 and exposes the hydrophobic layer 700 on the source-drain layer 600 .
  • the hydrophobic layer 700 also has a conductive function while increasing the adhesive force between the film layers. Therefore, the depth of the fourth opening 910 exposes the hydrophobic layer 700 to realize the pixel electrode in the subsequent step S700.
  • the layer 810 is electrically connected to the source and drain layers 600, and the thermal conductivity of the hydrophobic layer 700 can also be better exerted, and the heat dissipation performance is good.
  • the cross-sectional area of the fourth opening 910 on the first cross-section gradually increases.
  • the first cross section is parallel to the display panel 100 .
  • the cross-sectional area of the fourth opening 910 increases in the direction close to the hydrophobic layer 700 , which increases the contact area between the pixel electrode layer 810 and the hydrophobic layer 700 , and reduces the distance between the pixel electrode layer 810 and the source and drain electrodes.
  • the resistance between the layers 600 can better realize the display of the display panel 100 .
  • the source and drain layers 600 further include a second barrier layer 630 on the first metal thin film layer 620 .
  • the fourth opening 910 penetrates the passivation layer 800, penetrates the hydrophobic layer 700, and exposes the second barrier layer 630.
  • the first metal thin film layer 620 is located between the first barrier layer 610 and the second barrier layer 630 , which further increases the contact area between the pixel electrode layer 810 and the source and drain layers 600 and reduces the distance between the pixel electrode layer 810 and the source and drain layers 600 .
  • the resistance between the source and drain layers 600 can better realize the display of the display panel 100 .
  • a plurality of fifth openings 920 are formed on the conductive hydrophobic layer 700 .
  • the fifth opening 920 penetrates through the hydrophobic layer 700 and exposes the gate layer 300 or/and the source and drain layers 600 , specifically, the second hole of the source and drain layers 600 can be exposed.
  • the barrier layer 630 is exposed, please refer to FIG. 15 for details.
  • the adhesion between the passivation layer 800 or the insulating layer on the gate layer 300 and the second barrier layer 630 is greater than that between the passivation layer 800 or the insulating layer on the gate layer 300 and the second barrier layer 630 . Adhesion between the hydrophobic layers 700 .
  • the fifth opening 920 can increase the contact area between the passivation layer 800 or the insulating layer located on the gate layer 300 and the second barrier layer 630, increase the adhesion between the film layers, and at the same time
  • the fifth opening 920 also increases the contact area between the passivation layer 800 or the insulating layer on the gate layer 300 and the hydrophobic layer 700 , and also increases the adhesion between the film layers.
  • step S520 when step S520 is performed, the step of fabricating the fifth opening is omitted.
  • the hydrophobic layer 700 can improve the adhesion between the source/drain layer 600 or/and the gate layer 300 and the photoresist layer during the fabrication of the display panel 100.
  • the electrical conductivity and thermal conductivity are not reflected. Therefore, step S520 may or may not be performed, depending on the specific situation, which is not absolutely limited here.
  • the thickness of the hydrophobic layer 700 is less than 50 angstroms.
  • the main function of the hydrophobic layer 700 is to improve the adhesive force between the source and drain layers 600 or/and the gate layer 300 and the photoresist layer during the patterning process of manufacturing the display panel 100, and to improve the The electrical conductivity of the source and drain layers 600 or/and the gate layer 300 enhances the thermal conductivity of the display panel 100 , so the thickness of the hydrophobic layer 700 is not too thick, which leads to an increase in the overall thickness of the display panel 100 .
  • the thickness of the layer 700 may be less than 50 angstroms. When the thickness of the hydrophobic layer 700 is 30 angstroms, the predetermined function of the hydrophobic layer 700 is achieved, and the film thickness is reduced as much as possible.
  • step S600 is to form a passivation layer 800 on the source and drain layers 600 , please refer to FIG. 9 for details.
  • the pixel electrode layer 810 is electrically connected to the source and drain layers 600 through the fourth opening 910 .
  • the fourth opening 910 penetrates through the passivation layer 800 , through the hydrophobic layer 700 , through the second barrier layer 630 , and exposes the first metal thin film layer 620 .
  • the conductivity of the first metal thin film layer 620 is the highest, which further reduces the resistance between the pixel electrode layer 810 and the source and drain layers 600 , and better realizes the display of the display panel 100 .
  • the adhesion between the metal or alloy and the photoresist layer is enhanced, and the photoresist layer is prevented from accidentally falling off , the yield of the patterned metal thin film layer is improved, and the production quality of the display panel is improved.
  • the present application also discloses a display panel 100 , and the display panel 100 is formed by using any of the above-mentioned manufacturing methods for the display panel 100 .
  • the present application also discloses a display device, comprising any of the above-mentioned display panel 100 , a light-emitting device layer on the display panel, an encapsulation layer and a cover layer on the light-emitting device layer.
  • the present application also discloses a manufacturing method of a display device, including any of the above-mentioned manufacturing methods of the display panel 100 .
  • the display panel 100 after forming the display panel 100 , it further includes forming a light-emitting device layer, an encapsulation layer and a cover layer on the display panel 100 .
  • the present application discloses a display panel and a manufacturing method thereof.
  • the manufacturing method of the display panel includes: forming a metal thin film layer on a substrate; forming a hydrophobic layer and a photoresist layer on the metal thin film layer; patterning the photoresist layer to form a photoresist pattern; The hydrophobic layer covered by the photoresist pattern is removed; the metal thin film layer not covered by the hydrophobic layer is etched to form a first electrode layer.
  • the adhesion between the metal or alloy and the photoresist layer is enhanced, and the photoresist layer is prevented from accidentally falling off , the yield of the patterned metal thin film layer is improved, and the production quality of the display panel is improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板（100）及其制作方法。显示面板（100）的制作方法包括：在衬底（200）上形成金属薄膜层（601）（S100）；在金属薄膜层（601）上形成疏水层（700）及光阻层（710）（S200）；对光阻层（710）进行图案化处理，以形成光阻图案（S300）；将未被光阻图案覆盖的疏水层（700）去除（S400）；对未被疏水层覆盖的金属薄膜层（901）蚀刻，形成第一电极层（S500）。通过金属薄膜层（601）上设置疏水层（700），利用相似相溶原理，增强了金属或合金与光阻层（710）上之间的粘附力，防止了光阻层（710）的意外脱落。

Description

显示面板及其制作方法 技术领域
本申请涉及领域，尤其涉及一种显示面板及其制作方法。
 背景技术
随着生活水平的提高，人们对显示器尺寸、分辨率和画面刷新速率的追求越来越高，因此采用铜取代铝作为导电金属材料。
导电层包括铜膜时，与玻璃基板以及含硅介电层的附着力较差，在进行高温制程后，容易出现膜层脱落现象，现有技术中，一般通过在铜膜上下沉积极性较强的金属或合金材料以提高铜膜与介电层的附着力，但在导电层图案化过程中，极性较强的金属或合金与光阻层的粘附力较差，容易出现光阻层意外脱落，导致图案化导电层良率不高的技术问题。
因此，亟需一种显示面板及其制作方法以解决上述技术问题。
 技术问题
本申请提供了一种显示面板及其制作方法，以解决目前在导电层图案化过程中，金属或合金与光阻层的粘附力较差，容易出现光阻层意外脱落，导致图案化导电层良率不高的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
一种显示面板的制作方法，包括：
在衬底上形成金属薄膜层；
在所述金属薄膜层上形成疏水层及光阻层；
对所述光阻层进行图案化处理，以形成光阻图案；
将未被所述光阻图案覆盖的所述疏水层去除；
对未被所述疏水层覆盖的所述金属薄膜层进行蚀刻处理，以形成第一电极层。
在本申请的显示面板的制作方法中，所述第一电极层为栅极层，或所述第一电极层为源漏极层。
在本申请的显示面板的制作方法中，所述显示面板的制作方法还包括：
剥离所述光阻层；
利用等离子气体处理所述疏水层，将所述疏水层剥离。
在本申请的显示面板的制作方法中，利用等离子气体处理，将所述疏水层剥离的步骤包括：
利用氢气等离子或氧气等离子处理所述疏水层，使得所述疏水层与氢气等离子或氧气等离子形成碳氢气体或碳氧气体，将所述疏水层剥离。
在本申请的显示面板的制作方法中，形成第一电极层之后还包括：
在所述第一电极层上形成钝化层；
在所述钝化层上形成像素电极层。
在本申请的显示面板的制作方法中，所述钝化层的材料为二氧化硅与氮化硅的复合膜层，二氧化硅材料靠近所述源漏极层一侧。
在本申请的显示面板的制作方法中，形成所述钝化层的步骤包括：
在所述第一电极层上形成包括多个第四开孔的钝化层；
其中，所述第四开孔贯穿所述钝化层，使所述第一电极层裸露。
在本申请的显示面板的制作方法中，所述第一电极层包括第一阻挡层、及位于所述第一阻挡层上的第一金属薄膜层。
在本申请的显示面板的制作方法中，所述第一阻挡层的材料包括钼、钛、钨、钽中任意一种或多种的组合。
在本申请的显示面板的制作方法中，所述第一电极层还包括位于所述第一金属薄膜层上的第二阻挡层。
在本申请的显示面板的制作方法中，所述第二阻挡层的材料为钼、钛、钨、钽中任意一种或多种的组合。
在本申请的显示面板的制作方法中，将未被所述光阻图案覆盖的所述疏水层去除的步骤包括：
利用等离子气体处理，将未被所述光阻图案覆盖的所述疏水层去除；
其中，所述等离子气体包括氢气等离子或氧气等离子。
在本申请的显示面板的制作方法中，所述疏水层的材料为双层石墨烯、三层石墨烯、碳纤维、碳纳米管中的任意一种或多种的组合。
在本申请的显示面板的制作方法中，所述金属薄膜层的厚度为100埃米~500埃米。
在本申请的显示面板的制作方法中，所述金属薄膜层为源漏极层的材料，形成所述金属薄膜层之前，还包括：
在衬底上形成栅极层；
在所述栅极层上形成栅绝缘层；
在所述栅绝缘层上形成有源层。
在本申请的显示面板的制作方法中，所述对所述光阻层进行图案化处理，以形成光阻图案的步骤包括：
利用曝光显影制程，将所述光阻层进行第一图案化处理，在所述光阻层上形成包括多个第一开孔的第一图案，所述第一开孔使所述疏水层裸露。
在本申请的显示面板的制作方法中，所述将未被所述光阻图案覆盖的所述疏水层去除的步骤包括：
利用等离子气体处理，将所述疏水层进行与第二图案化处理，以在所述疏水层上形成与包括多个第二开孔的第二图案；
其中，一所述第二开孔与一所述第一开孔对应，所述第二开孔使所述金属薄膜层裸露。
在本申请的显示面板的制作方法中，所述疏水层的厚度小于50埃米。
本申请还提供了一种显示面板，所述显示面板利用如上述的显示面板的制作方法制作形成。
在本申请的显示面板中，所述显示面板还包括位于所述第一电极层上的钝化层及位于所述钝化层上的像素电极层。
 有益效果
本申请通过在金属薄膜层上设置疏水层，利用相似相溶原理，在图案化金属薄膜层过程中，增强了金属或合金与光阻层之间的粘附力，防止了光阻层意外脱落，提高了图案化金属薄膜层的良率，提高了显示面板的制作质量。
 附图说明
图1为本申请的显示面板的制作方法的步骤流程图；
图2为本申请的显示面板的制作方法中第一种结构示意图；
图3为本申请的显示面板的制作方法中第二种结构示意图；
图4为本申请的显示面板的制作方法中第三种结构示意图；
图5为本申请的显示面板的制作方法中第四种结构示意图；
图6为本申请的显示面板的制作方法中第五种结构示意图；
图7为本申请的显示面板的制作方法中第六种结构示意图；
图8为本申请的显示面板的制作方法中第七种结构示意图；
图9为本申请的显示面板的制作方法中第八种结构示意图；
图10为本申请的显示面板的制作方法中第九种结构示意图；
图11为本申请的显示面板的制作方法中第十种结构示意图；
图12为本申请的显示面板的制作方法中第十一种结构示意图；
图13为本申请的显示面板的制作方法中第十二种结构示意图；
图14为本申请的显示面板的制作方法中第十三种结构示意图；
图15为本申请的显示面板的制作方法中第十四种结构示意图。
 本发明的实施方式
本申请提供一种显示面板及其制作方法，为使本申请的目的、技术方案及效果更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
请参阅图1~图15，本申请还公开了一种显示面板100的制作方法，包括：
S100、在衬底上形成金属薄膜层。
S200、在所述金属薄膜层上形成疏水层700及光阻层。
S300、对所述光阻层进行图案化处理，以形成光阻图案。
S400、将未被所述光阻图案覆盖的所述疏水层700去除。
S500、对未被所述疏水层700覆盖的所述金属薄膜层进行蚀刻处理，以形成第一电极层。
本申请通过在金属薄膜层上设置疏水层，利用相似相溶原理，在图案化金属薄膜层过程中，增强了金属或合金与光阻层之间的粘附力，防止了光阻层意外脱落，提高了图案化金属薄膜层的良率，提高了显示面板的制作质量。
现结合具体实施例对本申请的技术方案进行描述。
请参阅图1~图15，所述显示面板100的制作方法，包括：
S100、在衬底200上形成金属薄膜层601。
本实施例中，所述金属薄膜层601为栅极层300的材料或源漏极层600的材料，即步骤S500形成的第一电极层为栅极层或源漏极层，在此不做限定，为方便描述，以下以所述金属薄膜层601为源漏极层600的材料为例，即形成所述第一电极层为所述源漏极层600进行描述，具体请参阅图2~图15，特此说明。
本实施例中，所述金属薄膜层601的厚度为100埃米~500埃米。
本实施例中，形成所述源漏极层600之前还包括：
S110、在衬底200上形成栅极层300。
本实施例中，所述栅极层300的具体结构及制作方法与源漏极层600类似，可以参阅源漏极层600的结构及方法，具体请参阅图2~图8，在此不再赘述。
S120、在所述栅极层300上形成栅绝缘层400。
S130、在所述栅绝缘层400上形成有源层500。
本实施例中，所述源漏极层600的材料包括与所述有源层500接触的对应区域内掺杂有以下元素钼、钛、钨、钽中任意一种或多种的组合。在靠近所述源漏极层600方向上，对应区域内掺杂的元素含量逐渐增大。增大有源层500与源漏极层600之间的粘结力，减少膜层脱落，增加电连接稳定性。
第一电极层本实施例中，以金属薄膜层601经图案化处理最终形成源漏极层600为例，所述源漏极层600包括第一阻挡层610、及位于所述第一阻挡层610上的第一金属薄膜层620，具体请参阅图10、图13。所述第一阻挡层610的材料包括钼、钛、钨、钽中任意一种或多种的组合。所述第一金属薄膜层620的材料为铜、铝、银中任意一种或多种的组合。所述第一阻挡层610提高了所述源漏极层600与有源层500之间的粘结力。
本实施例中，所述源漏极层600还包括位于所述第一金属薄膜层620上的第二阻挡层630，所述第二阻挡层630的材料为钼、钛、钨、钽中任意一种或多种的组合。所述第一金属薄膜层620位于所述第一阻挡层610与所述第二阻挡层630之间，具体请参阅图11、图14，所述第二阻挡层630提高了所述源漏极层600在图案化处理时与光阻层之间的粘结力，避免了光阻层的脱落，提高了图案化处理的精准度。
S200、在所述金属薄膜层601上形成所述疏水层700及光阻层710。
本实施例中，步骤S200包括：
S210、在所述金属薄膜层601上形成至少一所述疏水层700，具体请参阅图3。
本实施例中，所述疏水层700的材料为双层石墨烯、三层石墨烯、碳纤维、碳纳米管中的任意一种或多种的组合。利用相似相溶的原理，疏水性的材料与光阻层的粘结性好，所述疏水层700可以在制作显示面板100时，与光阻层有更好地粘结力，防止了光阻层的脱落，提高了制作显示面板100的质量。同时，双层石墨烯、三层石墨烯、碳纤维、碳纳米管均是良好的导电导热材料，可以更好地为所述栅极层300或/和所述源漏极层600降低电阻，在显示面板100工作时，更好地使热量导出散热，避免显示面板100热量聚积导致显示不良。同时，双层石墨烯、三层石墨烯、碳纤维、碳纳米管均是柔性材料，可以提供给柔性显示面板100更好的弯折性，降低整体显示面板100的弯折应力，显示面板100在弯折时，依然可以提供有信赖的显示效果。
S220、所述疏水层700上形成一光阻层710，具体请参阅图3。
本实施例中，所述光阻层710的材料可以为有机光阻材料，用于图案化处理所述疏水层700。
S300、对所述光阻层710进行图案化处理，以形成光阻图案。
本实施例中，步骤S300包括：利用曝光显影制程，将所述光阻层710进行第一图案化处理，在所述光阻层710上形成包括多个第一开孔711的第一图案。所述第一开孔711使所述疏水层700裸露，具体请参阅图4。
S400、将未被所述光阻图案覆盖的所述疏水层700去除。
本实施例中，利用等离子气体处理，将所述疏水层700进行与所述第一图案化处理对应的第二图案化处理，以在所述疏水层700上形成与所述第一图案对应的第二图案。
本实施例中，利用氢气等离子或氧气等离子处理所述疏水层700，使得部分所述疏水层700与氢气等离子形成碳氢气体或碳氧气体，以使所述金属薄膜层裸露，将所述疏水层700上形成与所述第一图案对应的第二图案。
本实施例中，步骤S400包括：利用等离子气体处理，将所述疏水层700进行第二图案化处理，以在所述疏水层700上形成包括多个第二开孔712的第二图案。其中，一所述第二开孔712与一所述第一开孔711对应。所述第二开孔712使所述金属薄膜层裸露，具体请参阅图5。
S500、对未被所述疏水层700覆盖的所述金属薄膜层进行蚀刻处理，以形成第一电极层。
本实施例中，光阻层710与所述疏水层700的粘结性好，在蚀刻过程中，避免了光阻层710的翘起脱落，从而提高了图案化处理的精准度，也提高了所述源漏极层600在与钝化层800或一些绝缘层之间的粘结力，避免了膜层之间的脱落。
本实施例中，利用刻蚀制程，将所述金属薄膜层601进行与所述第一图案化处理及所述第二图案化处理对应的第三图案化处理，以形成包括多个第三开孔930的源漏极层600。
本实施例中，所述第三图案化处理利用刻蚀制程，利用刻蚀液腐蚀所述金属薄膜层601的对应区域，以完成所述第三图案化处理。
本实施例中，所述第三开孔930贯穿所述源漏极层600、及使所述显示面板100的有源层500裸露，具体请参阅图6。所述第三开孔930内填充有后续的钝化层800，具体请参阅图9~图15。
本实施例中，步骤S500后还包括：
S510、剥离所述光阻层710。剥离所述光阻层710进行下一步的显示面板100制作。
本实施例中，剥离所述光阻层710，露出所述疏水层700，具体请参阅图7。
本实施例中，在步骤S600之前，步骤S510之后还可以包括：
S520、利用等离子气体处理所述疏水层700，将所述疏水层700剥离。
本实施例中，所述等离子气体处理的气体包括氢气等离子或氧气等离子。利用氢气等离子或氧气等离子处理所述疏水层700，使得所述疏水层700与氢气等离子或氧气等离子形成碳氢气体或碳氧气体，将所述疏水层700的对应区域的材料进行气化，经过挥发，将所述疏水层700剥离，具体请参阅图8。
S600、在所述疏水层700上形成钝化层800。
本实施例中，所述钝化层800的材料为二氧化硅或二氧化硅与氮化硅的复合膜层，其中，所述钝化层800的材料为二氧化硅与氮化硅的复合膜层时，二氧化硅材料位于靠近所述源漏极层600一侧。
本实施例中，所述源漏极层600的所述第三开孔930在远离所述有源层500的方向上，所述第三开孔930在第一截面上的面积逐渐增大，所述第一截面平行于所述显示面板100。所述疏水层700的所述第二开孔712的孔径小于靠近所述源漏极层600的所述第三开孔930的孔径。可以用刻蚀液形成本实施例的结构，形成如“箭头”般的结构，具体请参阅图12~图15，所述疏水层700增强了钝化层800与所述有源层500之间的固定，提高了膜层之间的稳定性，增强了显示面板100的显示稳定。
本实施例中，在形成所述钝化层800时包括位于所述钝化层800上的多个第四开孔910。
本实施例中，所述第四开孔910贯穿所述钝化层800，使所述源漏极层600裸露，方便步骤S700中所述像素电极层810与所述源漏极层600电连接。
本实施例中，所述第四开孔910贯穿所述钝化层800、及使位于所述源漏极层600上的所述疏水层700裸露，具体请参阅图12。所述疏水层700在增加膜层之间粘结力的同时，同样具有导电作用，故所述第四开孔910的深度使所述疏水层700裸露，即可实现后续步骤S700中的像素电极层810与源漏极层600的电连接，同时所述疏水层700的导热性也能更好地发挥，散热性能好。
本实施例中，在靠近所述疏水层700的方向上，所述第四开孔910在第一截面上的截面积逐渐增大。其中，所述第一截面与所述显示面板100平行。所述第四开孔910在靠近所述疏水层700方向上截面积增大，增大了像素电极层810与所述疏水层700之间的接触面积，降低了像素电极层810与源漏极层600之间的电阻，更好地实现显示面板100的显示。
本实施例中，所述源漏极层600还包括位于所述第一金属薄膜层620上的第二阻挡层630。所述第四开孔910贯穿所述钝化层800、贯穿所述疏水层700、及使所述第二阻挡层630裸露，具体请参阅图14。所述第一金属薄膜层620位于所述第一阻挡层610与所述第二阻挡层630之间，进一步增加像素电极层810与源漏极层600的接触面积，降低了像素电极层810与源漏极层600之间的电阻，更好地实现显示面板100的显示。
本实施例中，经过所述第一图案化处理、所述第二图案化处理、及所述第三图案化处理，在所述导电所述疏水层700上形成多个第五开孔920。所述第五开孔920贯穿所述疏水层700、及使所述栅极层300或/和所述源漏极层600裸露，具体地可以使所述源漏极层600的所述第二阻挡层630裸露，具体请参阅图15。钝化层800或位于所述栅极层300上的绝缘层与所述第二阻挡层630之间的粘结力大于钝化层800或位于所述栅极层300上的绝缘层与所述疏水层700之间的粘结力。所述第五开孔920可以增加钝化层800或位于所述栅极层300上的绝缘层与所述第二阻挡层630之间的接触面积，增加膜层之间的粘结力，同时第五开孔920也增加了钝化层800或位于所述栅极层300上的绝缘层与所述疏水层700之间的接触面积，同样增加了膜层之间的粘结力。
本实施例中，当执行步骤S520时，省略所述第五开孔的制作步骤，具体请参阅图9。最大程度减少所述显示面板100的厚度，所述疏水层700以完成其在显示面板100制作中提高所述源漏极层600或/和所述栅极层300与光阻层之间的粘结力的作用，但其导电性及导热性能没有体现，所以步骤S520可以进行，也可以不进行，视具体情况，在此不做绝对限定。
本实施例中，所述疏水层700的厚度小于50埃米。所述疏水层700的主要作用是提高在制作显示面板100图案化处理时，所述源漏极层600或/和所述栅极层300与光阻层之间的粘结力，以及提高述源漏极层600或/和所述栅极层300的导电性，增强显示面板100导热性，所以不用所述疏水层700的厚度过厚，而导致增加显示面板100的整体厚度，所述疏水层700的厚度小于50埃米即可，在所述疏水层700的厚度为30埃米时，既达到所述疏水层700预定的功能，也尽可能地减少了膜厚。
本实施例中，当执行步骤S520时，步骤S600为在源漏极层600上形成钝化层800，具体请参阅图9。
S700、在所述钝化层800上形成像素电极层810。
本实施例中，所述像素电极层810通过所述第四开孔910与所述源漏极层600电连接。
本实施例中，所述第四开孔910贯穿所述钝化层800、贯穿所述疏水层700、贯穿所述第二阻挡层630、及使所述第一金属薄膜层620裸露。所述第一金属薄膜层620的导电率是最高的，进一步降低了像素电极层810与源漏极层600之间的电阻，更好地实现显示面板100的显示。
本申请通过在金属薄膜层上设置疏水层，利用相似相溶原理，在图案化金属薄膜层过程中，增强了金属或合金与光阻层之间的粘附力，防止了光阻层意外脱落，提高了图案化金属薄膜层的良率，提高了显示面板的制作质量。
本申请还公开了一种显示面板100，所述显示面板100利用如任一上述的显示面板100的制作方法制作形成。
所述显示面板100的具体结构请参阅本申请所述显示面板100的制作方法实施例及图2~图15，在此不再赘述。
本申请还公开了一种显示装置，包括任一上述的显示面板100、位于所述显示面板上的发光器件层、位于所述发光器件层上的封装层及盖板层。
所述显示装置的具体结构请参阅本申请所述显示面板100的实施例及图2~图15，在此不再赘述。
本申请还公开了一种显示装置的制作方法，包括任一上述的显示面板100的制作方法。
所述显示装置的制作方法的具体步骤，请参阅本申请所述显示面板100的制作方法实施例及图2~图15，在此不再赘述。
其中，在形成所述显示面板100后还包括在所述显示面板100上形成发光器件层、封装层及盖板层。
综上所述，本申请公开了一种显示面板及其制作方法。该显示面板的制作方法包括：在衬底上形成金属薄膜层；在该金属薄膜层上形成疏水层及光阻层；对该光阻层进行图案化处理，以形成光阻图案；将未被该光阻图案覆盖的该疏水层去除；对未被该疏水层覆盖的该金属薄膜层进行蚀刻处理，以形成第一电极层。本申请通过在金属薄膜层上设置疏水层，利用相似相溶原理，在图案化金属薄膜层过程中，增强了金属或合金与光阻层之间的粘附力，防止了光阻层意外脱落，提高了图案化金属薄膜层的良率，提高了显示面板的制作质量。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (20)

  1. 一种显示面板的制作方法，其中，包括：
    在衬底上形成金属薄膜层；
    在所述金属薄膜层上形成疏水层及光阻层；
    对所述光阻层进行图案化处理，以形成光阻图案；
    将未被所述光阻图案覆盖的所述疏水层去除；
    对未被所述疏水层覆盖的所述金属薄膜层进行蚀刻处理，以形成第一电极层。
  2. 根据权利要求1所述的显示面板的制作方法，其中，所述第一电极层为栅极层，或所述第一电极层为源漏极层。
  3. 根据权利要求1所述的显示面板的制作方法，其中，所述显示面板的制作方法还包括：
    剥离所述光阻层；
    利用等离子气体处理所述疏水层，将所述疏水层剥离。
  4. 根据权利要求3所述的显示面板的制作方法，其中，利用等离子气体处理，将所述疏水层剥离的步骤包括：
    利用氢气等离子或氧气等离子处理所述疏水层，使得所述疏水层与氢气等离子或氧气等离子形成碳氢气体或碳氧气体，将所述疏水层剥离。
  5. 根据权利要求1所述的显示面板的制作方法，其中，形成第一电极层之后还包括：
    在所述第一电极层上形成钝化层；
    在所述钝化层上形成像素电极层。
  6. 根据权利要求5所述的显示面板的制作方法，其中，所述钝化层的材料为二氧化硅与氮化硅的复合膜层，二氧化硅材料靠近所述源漏极层一侧。
  7. 根据权利要求5所述的显示面板的制作方法，其中，形成所述钝化层的步骤包括：
    在所述第一电极层上形成包括多个第四开孔的钝化层；
    其中，所述第四开孔贯穿所述钝化层，使所述第一电极层裸露。
  8. 根据权利要求1所述的显示面板的制作方法，其中，所述第一电极层包括第一阻挡层、及位于所述第一阻挡层上的第一金属薄膜层。
  9. 根据权利要求8所述的显示面板的制作方法，其中，所述第一阻挡层的材料包括钼、钛、钨、钽中任意一种或多种的组合。
  10. 根据权利要求8所述的显示面板的制作方法，其中，所述第一电极层还包括位于所述第一金属薄膜层上的第二阻挡层。
  11. 根据权利要求10所述的显示面板的制作方法，其中，所述第二阻挡层的材料为钼、钛、钨、钽中任意一种或多种的组合。
  12. 根据权利要求1所述的显示面板的制作方法，其中，将未被所述光阻图案覆盖的所述疏水层去除的步骤包括：
    利用等离子气体处理，将未被所述光阻图案覆盖的所述疏水层去除；
    其中，所述等离子气体包括氢气等离子或氧气等离子。
  13. 根据权利要求1所述的显示面板的制作方法，其中，所述疏水层的材料为双层石墨烯、三层石墨烯、碳纤维、碳纳米管中的任意一种或多种的组合。
  14. 根据权利要求1所述的显示面板的制作方法，其中，所述金属薄膜层的厚度为100埃米~500埃米。
  15. 根据权利要求1所述的显示面板的制作方法，其中，所述金属薄膜层为源漏极层的材料，形成所述金属薄膜层之前，还包括：
    在衬底上形成栅极层；
    在所述栅极层上形成栅绝缘层；
    在所述栅绝缘层上形成有源层。
  16. 根据权利要求15所述的显示面板的制作方法，其中，所述对所述光阻层进行图案化处理，以形成光阻图案的步骤包括：
    利用曝光显影制程，将所述光阻层进行第一图案化处理，在所述光阻层上形成包括多个第一开孔的第一图案，所述第一开孔使所述疏水层裸露。
  17. 根据权利要求16所述的显示面板的制作方法，其中，所述将未被所述光阻图案覆盖的所述疏水层去除的步骤包括：
    利用等离子气体处理，将所述疏水层进行与第二图案化处理，以在所述疏水层上形成与包括多个第二开孔的第二图案；
    其中，一所述第二开孔与一所述第一开孔对应，所述第二开孔使所述金属薄膜层裸露。
  18. 根据权利要求1所述的显示面板的制作方法，其中，所述疏水层的厚度小于50埃米。
  19. 一种显示面板，其中，所述显示面板利用如权利要求1所述的显示面板的制作方法制作形成。
  20. 根据权利要求19所述的显示面板，其中，所述显示面板还包括位于所述第一电极层上的钝化层及位于所述钝化层上的像素电极层。
PCT/CN2020/130788 2020-10-16 2020-11-23 显示面板及其制作方法 WO2022077708A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011109456.3 2020-10-16
CN202011109456.3A CN112309847B (zh) 2020-10-16 2020-10-16 显示面板及其制作方法

Publications (1)

Publication Number Publication Date
WO2022077708A1 true WO2022077708A1 (zh) 2022-04-21

Family

ID=74327917

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/130788 WO2022077708A1 (zh) 2020-10-16 2020-11-23 显示面板及其制作方法

Country Status (2)

Country Link
CN (1) CN112309847B (zh)
WO (1) WO2022077708A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113487965B (zh) * 2021-06-22 2022-12-23 武汉华星光电半导体显示技术有限公司 支撑构件及其制作方法、显示模组
CN115996590A (zh) * 2021-06-29 2023-04-21 合肥鑫晟光电科技有限公司 显示面板及显示设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060264039A1 (en) * 2005-05-23 2006-11-23 International Business Machines Corporation Selective deposition of fine particles
CN102916016A (zh) * 2011-08-02 2013-02-06 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
CN104617111A (zh) * 2015-02-03 2015-05-13 京东方科技集团股份有限公司 基板及其制造方法、显示装置
CN105789218A (zh) * 2016-03-10 2016-07-20 京东方科技集团股份有限公司 一种基板、其制作方法及显示装置
CN108666223A (zh) * 2018-05-07 2018-10-16 华南理工大学 一种自对准底栅薄膜晶体管及其制备方法
CN108666325A (zh) * 2018-05-24 2018-10-16 京东方科技集团股份有限公司 一种tft基板的制备方法、tft基板及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060264039A1 (en) * 2005-05-23 2006-11-23 International Business Machines Corporation Selective deposition of fine particles
CN102916016A (zh) * 2011-08-02 2013-02-06 三星电子株式会社 薄膜晶体管阵列面板及其制造方法
CN104617111A (zh) * 2015-02-03 2015-05-13 京东方科技集团股份有限公司 基板及其制造方法、显示装置
CN105789218A (zh) * 2016-03-10 2016-07-20 京东方科技集团股份有限公司 一种基板、其制作方法及显示装置
CN108666223A (zh) * 2018-05-07 2018-10-16 华南理工大学 一种自对准底栅薄膜晶体管及其制备方法
CN108666325A (zh) * 2018-05-24 2018-10-16 京东方科技集团股份有限公司 一种tft基板的制备方法、tft基板及显示装置

Also Published As

Publication number Publication date
CN112309847B (zh) 2022-04-26
CN112309847A (zh) 2021-02-02

Similar Documents

Publication Publication Date Title
US9455324B2 (en) Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, and display device
WO2019223755A1 (zh) 阵列基板及其制造方法、显示面板
KR101901045B1 (ko) 박막 트랜지스터 및 그 준비 방법, 어레이 기판, 및 디스플레이 장치
JP2007157916A (ja) Ｔｆｔ基板及びｔｆｔ基板の製造方法
WO2017008497A1 (zh) 氧化物薄膜晶体管的制备方法
WO2018113214A1 (zh) 薄膜晶体管及其制作方法、显示基板、显示装置
WO2013127202A1 (zh) 阵列基板的制造方法及阵列基板、显示器
WO2022077708A1 (zh) 显示面板及其制作方法
CN111081737A (zh) 一种阵列基板制备方法及阵列基板
US11489052B2 (en) Thin film transistor, manufacturing method of thin film transistor and display device
CN106920753B (zh) 薄膜晶体管及其制作方法、阵列基板和显示器
TWI471948B (zh) 氧化物薄膜電晶體製程方法
TWI328880B (en) Method for fabricating a pixel structure of a liquid crystal display device
WO2021248609A1 (zh) 一种阵列基板及其制备方法以及显示面板
WO2017024718A1 (zh) 薄膜晶体管的制作方法和阵列基板的制作方法
JP2019536284A (ja) アレイ基板及びアレイ基板の製造方法
TW201351659A (zh) 薄膜電晶體及其製造方法
WO2022089066A1 (zh) 一种显示基板及其制作方法和显示装置
CN111584526B (zh) 显示基板及其制作方法、显示装置
JP4525928B2 (ja) 半導体装置の製造方法
TWI459447B (zh) 顯示面板及其製作方法
CN109638034A (zh) 显示面板的制造方法
WO2018014441A1 (zh) 薄膜晶体管及其制作方法
WO2018040287A1 (zh) 薄膜晶体管及其制作方法
CN113206144B (zh) 薄膜晶体管的制备方法、薄膜晶体管及显示面板

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20957482

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20957482

Country of ref document: EP

Kind code of ref document: A1