WO2018113214A1 - 薄膜晶体管及其制作方法、显示基板、显示装置 - Google Patents
薄膜晶体管及其制作方法、显示基板、显示装置 Download PDFInfo
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Abstract
Description
Claims (11)
- 一种薄膜晶体管的制作方法,包括:形成金属氧化物半导体图形,所述金属氧化物半导体图形包括层叠设置的第一金属氧化物半导体层和第二金属氧化物半导体层,所述第二金属氧化物半导体层位于所述第一金属氧化物半导体层的上方;在所述金属氧化物半导体图形上沉积源漏金属层,对所述源漏金属层和所述第二金属氧化物半导体层进行刻蚀,形成薄膜晶体管的源电极、漏电极和有源层,其中,所述有源层为利用第一刻蚀液去除所述源电极和所述漏电极之间的所述第二金属氧化物半导体层后得到,所述第一刻蚀液对所述第二金属氧化物半导体层进行刻蚀的速率大于所述第一刻蚀液对所述第一金属氧化物半导体层进行刻蚀的速率。
- 根据权利要求1所述的薄膜晶体管的制作方法,其中,所述第一刻蚀液对所述第二金属氧化物半导体层进行刻蚀的速率与所述第一刻蚀液对所述第一金属氧化物半导体层进行刻蚀的速率的比值不小于10。
- 根据权利要求1所述的薄膜晶体管的制作方法,其中,所述在所述金属氧化物半导体图形上沉积源漏金属层,对所述源漏金属层和所述第二金属氧化物半导体层进行刻蚀,形成薄膜晶体管的源电极、漏电极和有源层包括:在所述金属氧化物半导体图形上方沉积源漏金属层;在所述源漏金属层上涂覆光刻胶,对所述光刻胶进行曝光,显影后形成光刻胶保留区域和光刻胶未保留区域,其中,所述光刻胶保留区域对应薄膜晶体管的源电极和漏电极所在区域,光刻胶未保留区域对应除薄膜晶体管的源电极和漏电极之外的其他区域;利用第一刻蚀液对所述源漏金属层和所述第二金属氧化物半导体层进行刻蚀,去除光刻胶未保留区域的源漏金属层和第二金属氧化物半导体层,形成薄膜晶体管的源电极、漏电极和有源层,其中,所述有源层包括所述第一金属氧化物半导体层、位于所述第一金属氧化物半导体层与所述漏电极之间的第二金属氧化物半导体层、位于所述第一金属氧化物半导体层与所述源电 极之间的第二金属氧化物半导体层。
- 根据权利要求3所述的薄膜晶体管的制作方法,其中,所述第二金属氧化物半导体层采用ZnO、ZnON或IZO,所述第一金属氧化物半导体层采用IGZO,所述第一刻蚀液采用H2O2刻蚀液;或所述第二金属氧化物半导体层采用ZnO、ZnON、IZO或IGZO,所述第一金属氧化物半导体层采用ITZO、IGZTO或IGZXO,其中,X为Sn元素,所述第一刻蚀液采用Al刻蚀液。
- 根据权利要求1所述的薄膜晶体管的制作方法,其中,所述在所述金属氧化物半导体图形上沉积源漏金属层,对所述源漏金属层和所述第二金属氧化物半导体层进行刻蚀,形成薄膜晶体管的源电极、漏电极和有源层包括:在所述金属氧化物半导体图形上方沉积源漏金属层;在所述源漏金属层上涂覆光刻胶,对所述光刻胶进行曝光,形成光刻胶保留区域和光刻胶未保留区域,其中,所述光刻胶保留区域对应薄膜晶体管的源电极和漏电极所在区域,光刻胶未保留区域对应除薄膜晶体管的源电极和漏电极之外的其他区域;利用第二刻蚀液对所述源漏金属层进行刻蚀,去除光刻胶未保留区域的源漏金属层,形成薄膜晶体管的源电极和漏电极;利用第一刻蚀液对所述源电极和所述漏电极之间的所述第二金属氧化物半导体层进行刻蚀,去除所述源电极和所述漏电极之间的所述第二金属氧化物半导体层,形成薄膜晶体管的有源层,其中,所述有源层包括所述第一金属氧化物半导体层、位于所述第一金属氧化物半导体层与所述漏电极之间的第二金属氧化物半导体层、位于所述第一金属氧化物半导体层与所述源电极之间的第二金属氧化物半导体层。
- 根据权利要求5所述的薄膜晶体管的制作方法,其中,所述第二金属氧化物半导体层采用ZnO、ZnON或IZO,所述第一金属氧化物半导体层采用IGZO,所述第一刻蚀液采用H2O2刻蚀液;或所述第二金属氧化物半导体层采用ZnO、ZnON、IZO或IGZO,所述第一金属氧化物半导体层采用ITZO、IGZTO或IGZXO,所述第一刻蚀液采用Al刻蚀液;或所述源漏金属层包括Cu,所述第二刻蚀液为H2O2刻蚀液;或所述源漏金属层包括Mo或Al、AlNd,所述第二刻蚀液为Mo刻蚀药液。
- 根据权利要求1所述的薄膜晶体管的制作方法,其中,所述形成金属氧化物半导体图形的步骤之前,所述制作方法还包括:提供一衬底基板;在所述衬底基板上形成薄膜晶体管的栅电极;在形成有所述栅电极的衬底基板上形成栅绝缘层,所述金属氧化物半导体图形形成在所述栅绝缘层上。
- 根据权利要求1所述的薄膜晶体管的制作方法,其中,所述形成薄膜晶体管的源电极、漏电极和有源层的步骤之后,所述制作方法还包括:形成覆盖所述源电极、所述漏电极和所述有源层的栅绝缘层;在所述栅绝缘层上形成薄膜晶体管的栅电极。
- 一种薄膜晶体管,采用如权利要求1-8中任一项所述的制作方法制作得到,所述薄膜晶体管的有源层包括第一金属氧化物半导体层、位于所述第一金属氧化物半导体层与漏电极之间的第二金属氧化物半导体层、位于所述第一金属氧化物半导体层与源电极之间的第二金属氧化物半导体层,其中,所述第二金属氧化物半导体层被预设刻蚀液刻蚀的速率大于所述第一金属氧化物半导体层被预设刻蚀液刻蚀的速率。
- 一种显示基板,包括如权利要求9所述的薄膜晶体管。
- 一种显示装置,包括如权利要求10所述的显示基板。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100096634A1 (en) * | 2008-10-17 | 2010-04-22 | Samsung Electronics Co., Ltd. | Panel structure, display device including same, and methods of manufacturing panel structure and display device |
CN103337462A (zh) * | 2013-06-13 | 2013-10-02 | 北京大学深圳研究生院 | 一种薄膜晶体管的制备方法 |
CN205810822U (zh) * | 2016-06-15 | 2016-12-14 | 中华映管股份有限公司 | 薄膜晶体管及显示面板 |
CN106784014A (zh) * | 2016-12-23 | 2017-05-31 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示基板、显示装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6872604B2 (en) * | 2000-06-05 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a light emitting device |
JP5361651B2 (ja) * | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8492756B2 (en) * | 2009-01-23 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2012146956A (ja) * | 2010-12-20 | 2012-08-02 | Canon Inc | チャネルエッチ型薄膜トランジスタとその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100096634A1 (en) * | 2008-10-17 | 2010-04-22 | Samsung Electronics Co., Ltd. | Panel structure, display device including same, and methods of manufacturing panel structure and display device |
CN103337462A (zh) * | 2013-06-13 | 2013-10-02 | 北京大学深圳研究生院 | 一种薄膜晶体管的制备方法 |
CN205810822U (zh) * | 2016-06-15 | 2016-12-14 | 中华映管股份有限公司 | 薄膜晶体管及显示面板 |
CN106784014A (zh) * | 2016-12-23 | 2017-05-31 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示基板、显示装置 |
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