JP4095074B2 - 半導体素子製造方法 - Google Patents
半導体素子製造方法 Download PDFInfo
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- JP4095074B2 JP4095074B2 JP2005068160A JP2005068160A JP4095074B2 JP 4095074 B2 JP4095074 B2 JP 4095074B2 JP 2005068160 A JP2005068160 A JP 2005068160A JP 2005068160 A JP2005068160 A JP 2005068160A JP 4095074 B2 JP4095074 B2 JP 4095074B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000002425 crystallisation Methods 0.000 claims description 102
- 239000003990 capacitor Substances 0.000 claims description 85
- 239000010408 film Substances 0.000 claims description 84
- 239000010410 layer Substances 0.000 claims description 65
- 230000008025 crystallization Effects 0.000 claims description 61
- 239000010409 thin film Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000411 inducer Substances 0.000 claims description 15
- 239000007769 metal material Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000002513 implantation Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000001939 inductive effect Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
Description
114、212 MIC結晶化法で結晶化されたシリコン層
116、213 MILC結晶化法で結晶化されたシリコン層
Claims (6)
- 基板上に非晶質シリコンを蒸着してパターニングして半導体層及びキャパシターの第1電極を定義する段階と;
前記基板上に第1絶縁膜を形成する段階と;
前記半導体層の所定の領域上にフォトレジストパターンを形成する段階と;
前記フォトレジストパターンをマスクとした不純物注入工程により、前記半導体層にソースまたはドレイン領域を形成すると共に、前記キャパシターの第1電極に不純物を注入する段階と;
前記第1絶縁膜をエッチングして、前記キャパシターの第1電極を完全にオープンさせると共に、前記半導体層のソースまたはドレイン領域の全領域、ソースまたはドレイン領域の縁、ソースまたはドレイン領域の中央部、またはソースまたはドレイン領域とチャネル領域との界面に隣接する所定のソースまたはドレイン領域のうちいずれか一つ以上の領域、をオープンさせる第1絶縁膜パターンを形成する段階と;
前記フォトレジストパターンを除去する段階と;
前記オープンしたソースまたはドレイン領域上及びキャパシターの第1電極上に結晶化誘導物質を形成する段階と;
前記基板上に第2絶縁膜を形成する段階と;
前記基板を熱処理してソースまたはドレイン領域の所定領域及びキャパシターの第1電極をMIC結晶化法で結晶化して、前記チャネル領域をMILC結晶化法で結晶化する段階と;
前記第2絶縁膜上にゲート電極及びキャパシターの第2電極を形成する段階と;
前記基板上に層間絶縁膜及びソースまたはドレイン電極を形成する段階と;
を順次行うことを特徴とする半導体素子製造方法。 - 前記結晶化誘導物質は、Ni、Pd、Ti、Ag、Au、Al、Sn、Sb、Cu、Co、Mo、Tr、Ru、Rh、Cd及びPtのうちいずれか一つ以上の金属物質を蒸着した後、熱処理して、残留する金属物質を除去して形成されることを特徴とする請求項1に記載の半導体素子製造方法。
- 前記金属物質は10ないし200Åの厚さで形成することを特徴とする請求項2に記載の半導体素子製造方法。
- 前記熱処理工程は400ないし700℃で1ないし18時間の間熱処理する工程であることを特徴とする請求項1に記載の半導体素子製造方法。
- 前記熱処理工程は500ないし600℃で3ないし12時間の間熱処理する工程であることを特徴とする請求項1に記載の半導体素子製造方法。
- 前記第2絶縁膜を形成する段階は、薄膜トランジスタのゲート絶縁膜及びキャパシターの絶縁膜を形成する段階であることを特徴とする請求項1に記載の半導体素子製造方法。
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KR1020040050916A KR100712112B1 (ko) | 2004-06-30 | 2004-06-30 | 반도체 소자 및 그 제조 방법 |
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JP2006019697A JP2006019697A (ja) | 2006-01-19 |
JP4095074B2 true JP4095074B2 (ja) | 2008-06-04 |
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US (2) | US7423309B2 (ja) |
JP (1) | JP4095074B2 (ja) |
KR (1) | KR100712112B1 (ja) |
CN (1) | CN100552976C (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581317B2 (en) * | 2008-08-27 | 2013-11-12 | Texas Instruments Incorporated | SOI MuGFETs having single gate electrode level |
KR101040984B1 (ko) * | 2008-09-09 | 2011-06-16 | 경희대학교 산학협력단 | 비정질 물질의 상변화 방법 |
CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
KR101809661B1 (ko) * | 2011-06-03 | 2017-12-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치 |
US8486780B2 (en) * | 2011-08-29 | 2013-07-16 | Intermolecular, Inc. | Doped electrode for dram applications |
WO2016187136A1 (en) * | 2015-05-15 | 2016-11-24 | Veriskin, Inc. | Cutaneous blood flow monitoring device |
CN105118777A (zh) * | 2015-07-01 | 2015-12-02 | 深圳市华星光电技术有限公司 | Tft背板的制作方法及其结构 |
CN105470312A (zh) * | 2016-02-19 | 2016-04-06 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜晶体管及其制造方法 |
EP3510386A4 (en) * | 2016-09-08 | 2020-04-22 | Industrial Scientific Corporation | ELEMENT FOR DETECTING FLAMMABLE GAS WITH A SUPPORTING SUPPORT |
CN109742028B (zh) * | 2018-12-25 | 2021-04-02 | 惠科股份有限公司 | 一种薄膜晶体管的制作方法、薄膜晶体管和显示面板 |
CN109599343A (zh) * | 2018-12-25 | 2019-04-09 | 惠科股份有限公司 | 薄膜晶体管及其制作方法 |
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JP3535463B2 (ja) * | 1993-03-22 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
TW317643B (ja) * | 1996-02-23 | 1997-10-11 | Handotai Energy Kenkyusho Kk | |
KR19980077750A (ko) * | 1997-04-22 | 1998-11-16 | 윤종용 | 박막 트랜지스터 액정표시장치(tft-lcd) 및 그 제조방법 |
US6278130B1 (en) * | 1998-05-08 | 2001-08-21 | Seung-Ki Joo | Liquid crystal display and fabricating method thereof |
US6930732B2 (en) * | 2000-10-11 | 2005-08-16 | Lg.Philips Lcd Co., Ltd. | Array substrate for a liquid crystal display |
KR100439345B1 (ko) * | 2000-10-31 | 2004-07-07 | 피티플러스(주) | 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법 |
KR100390522B1 (ko) * | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
KR100566894B1 (ko) * | 2001-11-02 | 2006-04-04 | 네오폴리((주)) | Milc를 이용한 결정질 실리콘 tft 패널 및 제작방법 |
KR100458710B1 (ko) | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
JP2003297750A (ja) * | 2002-04-05 | 2003-10-17 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR100496287B1 (ko) * | 2002-08-03 | 2005-06-20 | 삼성에스디아이 주식회사 | 실리콘 박막의 결정화 방법, 이를 이용한 박막 트랜지스터및 상기 박막 트랜지스터를 구비한 평판 디스플레이 소자 |
US6800510B2 (en) | 2002-11-06 | 2004-10-05 | Hannstar Display Corporation | Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display |
KR100466628B1 (ko) * | 2002-11-12 | 2005-01-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
KR100570974B1 (ko) * | 2003-06-25 | 2006-04-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 |
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2004
- 2004-06-30 KR KR1020040050916A patent/KR100712112B1/ko active IP Right Grant
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2005
- 2005-03-10 JP JP2005068160A patent/JP4095074B2/ja active Active
- 2005-06-10 US US11/149,236 patent/US7423309B2/en active Active
- 2005-06-29 CN CNB2005100821165A patent/CN100552976C/zh active Active
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Publication number | Publication date |
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KR20060001752A (ko) | 2006-01-06 |
US7423309B2 (en) | 2008-09-09 |
US20060001025A1 (en) | 2006-01-05 |
KR100712112B1 (ko) | 2007-04-27 |
US7772061B2 (en) | 2010-08-10 |
CN1725512A (zh) | 2006-01-25 |
JP2006019697A (ja) | 2006-01-19 |
CN100552976C (zh) | 2009-10-21 |
US20080286912A1 (en) | 2008-11-20 |
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