CN105118777A - Tft背板的制作方法及其结构 - Google Patents
Tft背板的制作方法及其结构 Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 27
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- 239000010949 copper Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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Abstract
本发明提供一种TFT背板的制作方法及其结构。该TFT背板的制作方法,在通过对非晶硅层(3)植入诱导离子固相结晶成多晶硅层(3’)后,利用半色调光罩对多晶硅层(3’)进行图案化处理,形成岛状有源层(4)的同时,将位于岛状有源层(4)中部的具有较多植入的诱导离子的上层部分(31)蚀刻掉,形成沟道区,将位于岛状有源层(4)两侧的具有较多植入的诱导离子的上层部分(31)保留下来成为源/漏极接触区,既减少了光罩数量,又省去了单独对源/漏极接触区植入掺杂离子的工艺,从而能够简化制程,降低生产成本。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种TFT背板的制作方法及其结构。
背景技术
在显示技术领域,液晶显示器(LiquidCrystalDisplay,LCD)与有机发光二极管显示器(OrganicLightEmittingDiode,OLED)等平板显示技术已经逐步取代CRT显示器。其中,OLED具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽,可实现柔性显示与大面积全色显示等诸多优点,被业界公认为是最有发展潜力的显示装置。
OLED按照驱动类型可分为无源OLED(PMOLED)和有源OLED(AMOLED)。其中,AMOLED通常是由低温多晶硅(LowTemperaturePoly-Silicon,LTPS)TFT背板和电激发光层组成自发光组件。低温多晶硅具有较高的电子迁移率,较强的驱动能力,对AMOLED而言,采用低温多晶硅材料具有高分辨率、反应速度快、高亮度、高开口率、低能耗等优点。
制作低温多晶硅的常用工艺主要有准分子激光退火晶化(ExcimerLaserAnnealing,ELA)、固相诱导晶化(SolidPhaseCrystallization,SPC)、等,其中,SPC技术由于其大尺寸化容易且具有较高的成本优势,成为当前的研究热点。SPC技术又分为直接高温长时间加热烘烤方式和离子诱导方式。离子诱导方式通过植入特定的离子诱导非晶硅结晶。
传统的基于SPC技术的TFT背板的制作方法大体包括如下步骤:
步骤1、如图1所示,提供一基板100,在该基板100上依次沉积缓冲层200、与非晶硅(a-Si)层300;
步骤2、如图2所示,对非晶硅(a-Si)层300植入诱导离子,然后进行高温烘烤,使非晶硅快速结晶,形成多晶硅(poly-Si)层300’,该多晶硅层300’的上层部分310具有较多植入的诱导离子,下层部分为具有较纯净的多晶硅的半导体层320;
步骤3、如图3所示,将多晶硅层300’的上层部分310蚀刻掉,保留具有较纯净的多晶硅的半导体层320;
步骤4、如图4所示,利用一道光罩对半导体层320进行图案化处理,形成岛状有源层400;
步骤5、如图5所示,先涂布光阻,通过一道光罩对光阻进行图案化处理,再以光阻图案500为遮蔽层,对岛状有源层400植入掺杂离子,使得岛状有源层400的两侧经植入掺杂离子成为源/漏极接触区401,而岛状有源层400的中部未植入掺杂离子成为沟道区402;
步骤6、如图6、图7所示,去除光阻图案500后,依次制作栅极绝缘层700、栅极800、层间绝缘层900、及源/漏极1000,源/漏极1000与源/漏极接触区401接触,完成低温多晶硅TFT背板的制作。
可见,上述传统的基于SPC技术的TFT背板的制作方法在植入诱导离子使非晶硅结晶形成多晶硅层300’后,需要将其具有较多植入的诱导离子的上层部分310蚀刻掉,以保留具有较纯净的多晶硅的半导体层320;然后利用一道光罩对半导体层320进行图案化处理,形成岛状有源层400;后续因为需要制作源/漏极接触区401,必需再使用一道光罩制作光阻图案500,以光阻图案500为遮蔽层对岛状有源层400的两侧植入掺杂离子形成源/漏极接触区401。该制程过程不仅需要的光罩数量较多,还需要两次离子植入,生产成本较高。
发明内容
本发明的目的在于提供一种TFT背板的制作方法,能够简化制程,降低生产成本。
本发明的目的还在于提供一种TFT背板结构,其制程简单、生产成本较低。
为实现上述目的,本发明首先提供一种TFT背板的制作方法,在通过对非晶硅层植入诱导离子固相结晶成多晶硅层后,利用半色调光罩对多晶硅层进行图案化处理,形成岛状有源层的同时,将位于岛状有源层中部的具有较多植入的诱导离子的上层部分蚀刻掉,形成沟道区,将位于岛状有源层两侧的具有较多植入的诱导离子的上层部分保留下来成为源/漏极接触区。
所述的TFT背板的制作方法包括如下步骤:
步骤1、提供一基板,在该基板上依次沉积缓冲层、与非晶硅层;
步骤2、对非晶硅层植入诱导离子,然后进行高温烘烤,使非晶硅快速固相结晶,形成多晶硅层,该多晶硅层的上层部分具有较多植入的诱导离子,下层部分为具有较纯净的多晶硅的半导体层;
步骤3、利用半色调光罩对多晶硅层进行图案化处理,形成岛状有源层的同时,将位于岛状有源层中部的上层部分蚀刻掉,形成沟道区,将位于岛状有源层两侧的上层部分保留下来成为源/漏极接触区;
步骤4、在岛状有源层与缓冲层上依次制作栅极绝缘层、栅极、层间绝缘层、及源/漏极,所述源/漏极与源/漏极接触区接触。
所述基板为玻璃基板。
所述步骤2对非晶硅层植入的诱导离子为硼离子或镍离子。
所述步骤3具体包括:
步骤31、在所述多晶硅层的上层部分上涂布一层光阻层,使用半色调光罩将对应覆盖所述岛状有源层以外区域的光阻层进行全曝光,将对应覆盖所述沟道区区域的光阻层进行半曝光,将对应覆盖所述源/漏极接触区区域的光阻层不进行曝光,形成光阻层图案;
步骤32、将未被光阻层图案覆盖的多晶硅层蚀刻掉,形成岛状有源层;
步骤33、先去除光阻层图案中的半曝光部分,再将暴露出来的多晶硅层的上层部分蚀刻掉,形成沟道区;
步骤34、去除光阻层图案中的未曝光部分,保留被光阻层图案中的未曝光部分覆盖的多晶硅层的上层部分,形成源/漏极接触区。
所述缓冲层、栅极绝缘层、与层间绝缘层的材料为氮化硅、氧化硅、或二者的堆栈组合。
所述栅极、与源/漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
本发明还提供一种TFT背板结构,包括:
基板;
设于所述基板上的缓冲层;
设于所述缓冲层上的岛状有源层;所述岛状有源层由非晶硅层植入诱导离子形成多晶硅层后,再利用半色调光罩进行图案化处理得到,其呈两侧凸起、中部凹陷的形状;所述岛状有源层的两侧包括具有较多植入的诱导离子的上层部分和具有较纯净的多晶硅、作为半导体层的下层部分,所述上层部分形成源/漏极接触区;所述岛状有源层的中部仅包括下层部分,形成沟道区;
依次设于所述岛状有源层与缓冲层上的栅极绝缘层、栅极、层间绝缘层、及源/漏极;
所述源/漏极与源/漏极接触区接触。
所述基板为玻璃基板;所述缓冲层、栅极绝缘层、与层间绝缘层的材料为氮化硅、氧化硅、或二者的堆栈组合。
所述栅极、与源/漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
本发明的有益效果:本发明提供的一种TFT背板的制作方法,在通过对非晶硅层植入诱导离子固相结晶成多晶硅层后,利用半色调光罩对多晶硅层进行图案化处理,形成岛状有源层的同时,将位于岛状有源层中部的具有较多植入的诱导离子的上层部分蚀刻掉,形成沟道区,将位于岛状有源层两侧的具有较多植入的诱导离子的上层部分保留下来成为源/漏极接触区,既减少了光罩数量,又省去了单独对源/漏极接触区植入掺杂离子的工艺,从而能够简化制程,降低生产成本。本发明提供的一种TFT背板结构,其岛状有源层呈两侧凸起、中部凹陷的形状,所述岛状有源层的两侧包括具有较多植入的诱导离子的上层部分和具有较纯净的多晶硅、作为半导体层的下层部分,所述上层部分形成源/漏极接触区;所述岛状有源层的中部仅包括下层部分,形成沟道区;该TFT背板结构的制程简单、生产成本较低。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为传统的基于SPC技术的TFT背板的制作方法的步骤1的示意图;
图2为传统的基于SPC技术的TFT背板的制作方法的步骤2的示意图;
图3为传统的基于SPC技术的TFT背板的制作方法的步骤3的示意图;
图4为传统的基于SPC技术的TFT背板的制作方法的步骤4的示意图;
图5为传统的基于SPC技术的TFT背板的制作方法的步骤5的示意图;
图6、图7为传统的基于SPC技术的TFT背板的制作方法的步骤6的示意图;
图8为本发明的TFT背板的制作方法的流程图;
图9为本发明的TFT背板的制作方法的步骤1的示意图;
图10为本发明的TFT背板的制作方法的步骤2的示意图;
图11、图12为本发明的TFT背板的制作方法的步骤3的示意图;
图13、图14为本发明的TFT背板的制作方法的步骤4的示意图;图14同时为本发明的TFT背板结构的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图8,本发明首先提供一种TFT背板的制作方法,包括如下步骤:
步骤1、如图9所示,提供一基板1,在该基板1上依次沉积缓冲层2、与非晶硅层3。
具体地,所述基板1为透明基板,优选的,所述基板1为玻璃基板。
所述缓冲层2的材料为氮化硅(SiNx)、氧化硅(SiOx)、或二者的堆栈组合。
步骤2、如图10所示,对非晶硅层3植入诱导离子,然后进行高温烘烤,使非晶硅快速固相结晶,形成多晶硅层3’,该多晶硅层3’的上层部分31具有较多植入的诱导离子,下层部分32为具有较纯净的多晶硅的半导体层。
具体地,该步骤2对非晶硅层3植入的诱导离子为硼(B)离子或镍(Ni)离子。
步骤3、如图11、图12所示,利用半色调光罩对多晶硅层3’进行图案化处理,形成岛状有源层4的同时,将位于岛状有源层4中部的上层部分31蚀刻掉,形成沟道区,将位于岛状有源层4两侧的上层部分31保留下来成为源/漏极接触区。
进一步地,该步骤3具体包括:
步骤31、在所述多晶硅层3’的上层部分31上涂布一层光阻层,使用半色调光罩将对应覆盖所述岛状有源层4以外区域的光阻层进行全曝光,将对应覆盖所述沟道区区域的光阻层进行半曝光,将对应覆盖所述源/漏极接触区区域的光阻层不进行曝光,形成光阻层图案5;
步骤32、将未被光阻层图案5覆盖的多晶硅层3’蚀刻掉,形成岛状有源层4;
步骤33、先去除光阻层图案5中的半曝光部分,再将暴露出来的多晶硅层3’的上层部分31蚀刻掉,形成沟道区;
步骤34、去除光阻层图案5中的未曝光部分,保留被光阻层图案5中的未曝光部分覆盖的多晶硅层3’的上层部分31,形成源/漏极接触区。
步骤4、如图13、图14所示,在岛状有源层4与缓冲层2上依次制作栅极绝缘层6、栅极7、层间绝缘层8、及源/漏极9,所述源/漏极9与源/漏极接触区42接触。
具体地,所述栅极绝缘层6、与层间绝缘层8的材料为SiNx、SiOx、或二者的堆栈组合。
所述栅极7、与源/漏极9的材料为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合。
本发明的TFT背板的制作方法,在通过对非晶硅层3植入诱导离子固相结晶成多晶硅层3’后,利用半色调光罩对多晶硅层3’进行图案化处理,形成岛状有源层4的同时,将位于岛状有源层4中部的具有较多植入的诱导离子的上层部分31蚀刻掉,形成沟道区,将位于岛状有源层4两侧的具有较多植入的诱导离子的上层部分31保留下来成为源/漏极接触区,既减少了光罩数量,又省去了单独对源/漏极接触区植入掺杂离子的工艺,从而能够简化制程,降低生产成本。
在上述TFT背板的制作方法的基础上,本发明还提供一种TFT背板结构,如图14所示,包括:
基板1;
设于所述基板1上的缓冲层2;
设于所述缓冲层2上的岛状有源层4;所述岛状有源层4由非晶硅层植入诱导离子形成多晶硅层后,再利用半色调光罩进行图案化处理得到,其呈两侧凸起、中部凹陷的形状;所述岛状有源层4的两侧包括具有较多植入的诱导离子的上层部分31和具有较纯净的多晶硅、作为半导体层的下层部分32,所述上层部分31形成源/漏极接触区;所述岛状有源层4的中部仅包括下层部分32,形成沟道区;
依次设于所述岛状有源层4与缓冲层2上的栅极绝缘层6、栅极7、层间绝缘层8、及源/漏极9;
所述源/漏极9与源/漏极接触区42接触。
具体地,所述基板1为透明基板,优选的,所述基板1为玻璃基板。
所述缓冲层2、栅极绝缘层6、与层间绝缘层8的材料为SiNx、SiOx、或二者的堆栈组合。
所述栅极7、与源/漏极9的材料为Mo、Ti、Al、Cu中的一种或多种的堆栈组合。
该TFT背板结构的制程简单、生产成本较低。
综上所述,本发明的TFT背板的制作方法,在通过对非晶硅层植入诱导离子固相结晶成多晶硅层后,利用半色调光罩对多晶硅层进行图案化处理,形成岛状有源层的同时,将位于岛状有源层中部的具有较多植入的诱导离子的上层部分蚀刻掉,形成沟道区,将位于岛状有源层两侧的具有较多植入的诱导离子的上层部分保留下来成为源/漏极接触区,既减少了光罩数量,又省去了单独对源/漏极接触区植入掺杂离子的工艺,从而能够简化制程,降低生产成本。本发明的TFT背板结构,其岛状有源层呈两侧凸起、中部凹陷的形状,所述岛状有源层的两侧包括具有较多植入的诱导离子的上层部分和具有较纯净的多晶硅、作为半导体层的下层部分,所述上层部分形成源/漏极接触区;所述岛状有源层的中部仅包括下层部分,形成沟道区;该TFT背板结构的制程简单、生产成本较低。
综上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种TFT背板的制作方法,其特征在于,在通过对非晶硅层(3)植入诱导离子固相结晶成多晶硅层(3’)后,利用半色调光罩对多晶硅层(3’)进行图案化处理,形成岛状有源层(4)的同时,将位于岛状有源层(4)中部的具有较多植入的诱导离子的上层部分(31)蚀刻掉,形成沟道区,将位于岛状有源层(4)两侧的具有较多植入的诱导离子的上层部分(31)保留下来成为源/漏极接触区。
2.如权利要求1所述的TFT背板的制作方法,其特征在于,包括如下步骤:
步骤1、提供一基板(1),在该基板(1)上依次沉积缓冲层(2)、与非晶硅层(3);
步骤2、对非晶硅层(3)植入诱导离子,然后进行高温烘烤,使非晶硅快速固相结晶,形成多晶硅层(3’),该多晶硅层(3’)的上层部分(31)具有较多植入的诱导离子,下层部分(32)为具有较纯净的多晶硅的半导体层;
步骤3、利用半色调光罩对多晶硅层(3’)进行图案化处理,形成岛状有源层(4)的同时,将位于岛状有源层(4)中部的上层部分(31)蚀刻掉,形成沟道区,将位于岛状有源层(4)两侧的上层部分(31)保留下来成为源/漏极接触区;
步骤4、在岛状有源层(4)与缓冲层(2)上依次制作栅极绝缘层(6)、栅极(7)、层间绝缘层(8)、及源/漏极(9),所述源/漏极(9)与源/漏极接触区接触。
3.如权利要求2所述的TFT背板的制作方法,其特征在于,所述基板(1)为玻璃基板。
4.如权利要求2所述的TFT背板的制作方法,其特征在于,所述步骤2对非晶硅层(3)植入的诱导离子为硼离子或镍离子。
5.如权利要求2所述的TFT背板的制作方法,其特征在于,所述步骤3具体包括:
步骤31、在所述多晶硅层(3’)的上层部分(31)上涂布一层光阻层,使用半色调光罩将对应覆盖所述岛状有源层(4)以外区域的光阻层进行全曝光,将对应覆盖所述沟道区区域的光阻层进行半曝光,将对应覆盖所述源/漏极接触区区域的光阻层不进行曝光,形成光阻层图案(5);
步骤32、将未被光阻层图案(5)覆盖的多晶硅层(3’)蚀刻掉,形成岛状有源层(4);
步骤33、先去除光阻层图案(5)中的半曝光部分,再将暴露出来的多晶硅层(3’)的上层部分(31)蚀刻掉,形成沟道区;
步骤34、去除光阻层图案(5)中的未曝光部分,保留被光阻层图案(5)中的未曝光部分覆盖的多晶硅层(3’)的上层部分(31),形成源/漏极接触区。
6.如权利要求2所述的TFT背板的制作方法,其特征在于,所述缓冲层(2)、栅极绝缘层(6)、与层间绝缘层(8)的材料为氮化硅、氧化硅、或二者的堆栈组合。
7.如权利要求2所述的TFT背板的制作方法,其特征在于,所述栅极(7)、与源/漏极(9)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
8.一种TFT背板结构,其特征在于,包括:
基板(1);
设于所述基板(1)上的缓冲层(2);
设于所述缓冲层(2)上的岛状有源层(4);所述岛状有源层(4)由非晶硅层植入诱导离子形成多晶硅层后,再利用半色调光罩进行图案化处理得到,其呈两侧凸起、中部凹陷的形状;所述岛状有源层(4)的两侧包括具有较多植入的诱导离子的上层部分(31)和具有较纯净的多晶硅、作为半导体层的下层部分(32),所述上层部分(31)形成源/漏极接触区;所述岛状有源层(4)的中部仅包括下层部分(32),形成沟道区;
依次设于所述岛状有源层(4)与缓冲层(2)上的栅极绝缘层(6)、栅极(7)、层间绝缘层(8)、及源/漏极(9);
所述源/漏极(9)与源/漏极接触区接触。
9.如权利要求8所述的TFT背板结构,其特征在于,所述基板(1)为玻璃基板;所述缓冲层(2)、栅极绝缘层(6)、与层间绝缘层(8)的材料为氮化硅、氧化硅、或二者的堆栈组合。
10.如权利要求8所述的TFT背板结构,其特征在于,所述栅极(7)、与源/漏极(9)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
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CN107910351A (zh) * | 2017-11-14 | 2018-04-13 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
CN107910351B (zh) * | 2017-11-14 | 2020-06-05 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
WO2019213859A1 (zh) * | 2018-05-09 | 2019-11-14 | 深圳市柔宇科技有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
WO2021128508A1 (zh) * | 2019-12-25 | 2021-07-01 | Tcl华星光电技术有限公司 | Tft阵列基板及其制作方法 |
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US20170141137A1 (en) | 2017-05-18 |
US9735186B2 (en) | 2017-08-15 |
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