CN104977764A - 一种阵列基板及其制作方法、液晶显示器 - Google Patents
一种阵列基板及其制作方法、液晶显示器 Download PDFInfo
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Abstract
本发明公开了一种阵列基板及其制作方法、液晶显示器,该阵列基板包括基板以及依次形成在基板上的遮光层、缓冲层、半导体层、栅极绝缘层以及栅极电极;其中,缓冲层上设置第一通孔,栅极绝缘层上设置第二通孔,栅极电极通过连通的第一通孔和第二通孔与遮光层电性连接。通过上述方式,本发明能够增强薄膜晶体管的电流驱动能力,提高显示质量。
Description
技术领域
本发明涉及液晶显示领域,特别是涉及一种阵列基板及其制作方法、液晶显示器。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED),又称为有机电激光显示(Organic Electroluminesence Display,OELD)。因为具备轻薄、省电等特性,这种显示设备得到了广泛应用,OLED屏幕具备了许多LCD不可比拟的优势。
目前,有机发光显示技术广泛应用在中小尺寸显示面板上。随着半导体制程技术的提升,显示器件的分辨率要求越来越高,相应的器件越来越小,对薄膜晶体管的特性要求也越来越高。
显示器件的高精细化和驱动电路的高速响应化要求TFT器件能快速的实现器件开关,但现有的TFT器件中的半导体层的电流驱动能力一般,难以适应显示器件的高精细化和驱动电路的高速响应化发展。
发明内容
本发明主要解决的技术问题是提供一种阵列基板及其制作方法、液晶显示器,能够增强薄膜晶体管的电流驱动能力,提高显示质量。
为解决上述技术问题,本发明采用的一个技术方案是:提供一种阵列基板,阵列基板包括基板以及依次形成在基板上的遮光层、缓冲层、半导体层、栅极绝缘层以及栅极电极;其中,缓冲层上设置第一通孔,栅极绝缘层上设置第二通孔,栅极电极通过连通的第一通孔和第二通孔与遮光层电性连接。
其中,遮光层包括独立设置的第一子遮光层及第二子遮光层;栅极电极包括第一子栅极电极及第二子栅极电极;缓冲层分别对应第一子遮光层和第二子遮光层设置一第一通孔,栅极绝缘层分别对应第一子栅极电极和第二子栅极电极设置一第二通孔,使第一子栅极电极通过对应的且连通的第一通孔和第二通孔与第一子遮光层电性连接,第二子栅极电极通过对应的且连通的第一通孔和第二通孔与第二子遮光层电性连接。
其中,第一通孔和第二通孔均采用光刻和刻蚀工艺形成的。
其中,通孔设置于栅极端子区域或者像素电极区域。
其中,阵列基板还包括依次形成在栅极电极上的层间绝缘层、源/漏电极、钝化层、有机绝缘层以及透明电极层;其中,钝化层上设置有第三通孔,有机绝缘层上设置有第四通孔,透明电极层通过第三通孔及第四通孔与源/漏电极电性连接。
为解决上述技术问题,本发明采用的另一个技术方案是:提供一种阵列基板的制造方法,方法包括:在基板上依次形成遮光层、缓冲层、半导体层以及栅极绝缘层;在缓冲层上形成第一通孔,以及在栅极绝缘层上形成第二通孔,以使遮光层部分裸露;在栅极绝缘层上形成栅极电极,以使栅极电极通过连通的第一通孔和第二通孔与遮光层连接。
其中,步骤在基板上依次形成遮光层、缓冲层、半导体层以及栅极绝缘层具体为:在基板上沉积遮光层并图形化,以形成第一子遮光层及第二子遮光层;在第一子遮光层及第二子遮光层上形成缓冲层;在缓冲层上沉积半导体层并图形化,以形成分别对应第一子遮光层及第二子遮光层的第一半导体小岛及第二半导体小岛;在第一半导体小岛及第二半导体小岛上形成栅极绝缘层。
其中,在缓冲层上形成第一通孔,以及在栅极绝缘层上形成第二通孔,以使遮光层部分裸露的步骤具体为:在缓冲层上分别对应第一子遮光层和第二子遮光层设置一第一通孔,在栅极绝缘层上分别对应第一子栅极电极和第二子栅极电极设置一第二通孔,以使第一遮光层及第二遮光层部分裸露。
其中,在栅极绝缘层上形成栅极电极,以使栅极电极通过连通的第一通孔和第二通孔与遮光层连接的步骤具体为:在栅极绝缘层上形成栅极电极并图形化,以形成第一子栅极电极及第二子栅极电极;其中,第一子栅极电极通过对应第一子遮光层设置的第一通孔及第二通孔与第一子遮光层电性连接,第二字栅极电极通过对应第二子遮光层设置的第一通孔及第二通孔与第二子遮光层电性连接。
为解决上述技术问题,本发明采用的另一个技术方案是:提供一种液晶显示器,包括显示面板和背光光源,显示面板包括如上所述的阵列基板。
本发明的有益效果是:区别于现有技术的情况,本发明通过缓冲层上设置第一通孔,在栅极绝缘层上设置第二通孔,栅极电极通过连通的第一通孔和第二通孔与遮光层电性连接,以形成双栅极。通过上述方式,本发明的TFT结构在通入电压时,在双栅极之间形成反转层区域,能够增强薄膜晶体管的电流驱动能力,提高显示质量。
附图说明
图1是本发明阵列基板第一实施方式的结构示意图;
图2是本发明阵列基板第二实施方式的第一结构示意图;
图3是本发明阵列基板第二实施方式的第二结构示意图;
图4是本发明阵列基板的制作方法第一实施方式的流程示意图;
图5是本发明阵列基板的制作方法第一实施方式中形成通孔的结构示意图;
图6是本发明阵列基板的制作方法第二实施方式的流程示意图;
图7是本发明液晶显示器一实施方式的结构示意图。
具体实施方式
参阅图1,本发明阵列基板第一实施方式的结构示意图,该阵列基板包括基板110以及依次形成在基板110上的遮光层120、缓冲层130、半导体层140、栅极绝缘层150以及栅极电极160。
缓冲层130上设置第一通孔131,栅极绝缘层150上设置第二通孔151,栅极电极160通过连通的第一通孔131和第二通孔151与遮光层120电性连接。
其中,基板110一般是玻璃基板或塑料基板,也可以采用其他透明材料。
遮光层120和栅极电极160均为金属材料,例如铜(Cu)、铝(Al)、钼(Mo)、钛(Ti)或其层叠结构。
缓冲层130一般是氧化硅(SiOx)或氮化硅(SiNx)层,其通过化学气相沉积形成于半导体层140上。
半导体层140是通过化学气相沉积在缓冲层130上形成非晶硅层,并通过退火工艺将该非晶硅层转化为多晶硅层,并通过光罩制程在该多晶硅层上形成预定图案,进而形成半导体层140。
栅极绝缘层150一般是氧化硅(SiOx)或氮化硅(SiNx)层,其通过化学气相沉积形成于半导体层140上。
在本实施方式中,在缓冲层130上设置第一通孔131,以及在栅极绝缘层150上设置第二通孔151,均可以采用光刻和刻蚀的工艺进行,该工艺属于现有技术,这里不再赘述。
区别于现有技术,本实施方式通过缓冲层上设置第一通孔,在栅极绝缘层上设置第二通孔,栅极电极通过连通的第一通孔和第二通孔与遮光层电性连接,以形成双栅极。通过上述方式,本发明的TFT结构在通入电压时,在双栅极之间形成反转层区域,能够增强薄膜晶体管的电流驱动能力,提高显示质量。
参阅图2,本发明阵列基板第二实施方式的结构示意图,该阵列基板包括基板210以及依次形成在基板210上的遮光层220、缓冲层230、半导体层240、栅极绝缘层250以及栅极电极260;其中,缓冲层230上设置第一通孔(未标示),栅极绝缘层250上设置第二通孔(未标示),栅极电极260通过连通的第一通孔和第二通孔与遮光层220电性连接。
具体地,遮光层220包括独立设置的第一子遮光层221及第二子遮光层222;栅极电极260包括第一子栅极电极261及第二子栅极电极262;缓冲层230分别对应第一子遮光层221和第二子遮光层222设置一第一通孔,栅极绝缘层250分别对应第一子栅极电极261和第二子栅极电极262设置一第二通孔,使第一子栅极电极261通过对应的且连通的第一通孔和第二通孔与第一子遮光层221电性连接,第二子栅极电极262通过对应的且连通的第一通孔和第二通孔与第二子遮光层222电性连接。
也就是说,缓冲层230上有两个分别对应于第一子遮光层221和第二子遮光层222的第一通孔,栅极绝缘层250上有两个分别对应第一子栅极电极261和第二子栅极电极262的第二通孔,其中,对应第一子遮光层221的第一通孔和对应第一子栅极电极261的第二通孔连通,对应第二子遮光层222的第一通孔和对应第二子栅极电极262的第二通孔连通。
另外,该多个通孔的设置应当尽量远离图形化后的半导体层240,即第一半导体小岛241和第二半导体小岛242。
如图3所示,在本实施方式中,该阵列基板包括基板301以及依次形成在基板301上的遮光层302、缓冲层303、半导体层304、栅极绝缘层305、栅极电极306、层间绝缘层307、源/漏电极308、钝化层309、有机绝缘层310以及透明电极层311。
钝化层309上设置有第三通孔(未标示),有机绝缘层310上设置有第四通孔,透明电极层311通过第三通孔及第四通孔与源/漏电极308电性连接。
其中,层间绝缘层307一般是氧化硅(SiOx)或氮化硅(SiNx)层,其通过化学气相沉积形成于栅极电极306上。
源/漏电极308一般为金属材料,例如铜(Cu)、铝(Al)、钼(Mo)、钛(Ti)或其层叠结构。
钝化层309一般为无机材料或偏无机的材料制成。
有机绝缘层310有有机材料或偏有机的材料制成,主要起到绝缘作用。
透明电极层311一般为氧化铟锡(ITO),也可以是铟镓锌氧化物(IGZO)等其他透明材料。
在具体的实施过程中,透明电极层311作为阳极,与阴极之间设置有机发光层,即形成电致发光二极管。
参阅图4,本发明阵列基板的制作方法第一实施方式的流程示意图,该方法包括:
步骤401:在基板510上依次形成遮光层520、缓冲层530、半导体层540以及栅极绝缘层550;
步骤402:在缓冲层530上形成第一通孔531,以及在栅极绝缘层550上形成第二通孔551,以使遮光层520部分裸露;
如图5所示,在形成栅极绝缘层550后,在其表面涂覆一层光刻胶,烘烤后利用光罩紫外照射,曝光部分产生聚合反应不易被刻蚀溶剂中洗去,而未被曝光部分则会被洗去以形成通孔。
步骤403:在栅极绝缘层550上形成栅极电极(图未示),以使栅极电极通过连通的第一通孔531和第二通孔551与遮光层520连接。
参阅图6,本发明阵列基板的制作方法第二实施方式的流程示意图,该方法包括:
步骤601:在基板上沉积遮光层并图形化,以形成第一子遮光层及第二子遮光层;
其中,第一子遮光层及第二子遮光层各自独立,无电性连接。
步骤602:在第一子遮光层及第二子遮光层上形成缓冲层;
缓冲层一般采用化学气相沉积、物理溅射等方式形成。
步骤603:在缓冲层上沉积半导体层并图形化,以形成分别对应第一子遮光层及第二子遮光层的第一半导体小岛及第二半导体小岛;
在一种实施方式中,第一半导体小岛为NPN型半导体,第二半导体小岛为PNP型半导体,其中,第一半导体为轻掺杂型半导体。当然,在其他实施方式中,也可以是第一半导体小岛为PNP型半导体,第二半导体小岛为NPN型半导体。
步骤604:在第一半导体小岛及第二半导体小岛上形成栅极绝缘层;
步骤605:在缓冲层上分别对应第一子遮光层和第二子遮光层设置一第一通孔,在栅极绝缘层上分别对应第一子栅极电极和第二子栅极电极设置一第二通孔,以使第一遮光层及第二遮光层部分裸露;
该过程与前述实施方式相同,这里不再赘述。
步骤606:在栅极绝缘层上形成栅极电极并图形化,以形成第一子栅极电极及第二子栅极电极;
其中,第一子栅极电极通过对应第一子遮光层设置的第一通孔及第二通孔与第一子遮光层电性连接,第二字栅极电极通过对应第二子遮光层设置的第一通孔及第二通孔与第二子遮光层电性连接。
以上步骤中的图形化过程,均可以采用光刻和刻蚀的工艺来完成,这里不再赘述。
区别于现有技术,本实施方式通过光刻和刻蚀工艺在栅极绝缘层缓冲层上设置第一通孔,在栅极绝缘层上设置第二通孔,使两个栅极电极分别通过连通的第一通孔和第二通孔与对应的遮光层电性连接,以形成双栅极。通过上述方式,本发明的TFT结构在通入电压时,在双栅极之间形成反转层区域,能够增强薄膜晶体管的电流驱动能力,提高显示质量。
参阅图7,本发明液晶显示器一实施方式的结构示意图,该液晶显示器包括面板和背光光源。
其中,显示面板710包括彩膜基板711、阵列基板712以及该彩膜基板711和阵列基板712之间的液晶层713;该阵列基板712是如上各个实施方式所述的阵列基板,这里不再赘述。
以上所述仅为本发明的实施方式,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (10)
1.一种阵列基板,其特征在于,所述阵列基板包括基板以及依次形成在所述基板上的遮光层、缓冲层、半导体层、栅极绝缘层以及栅极电极;
其中,所述缓冲层上设置第一通孔,所述栅极绝缘层上设置第二通孔,所述栅极电极通过连通的所述第一通孔和所述第二通孔与所述遮光层电性连接。
2.根据权利要求1所述的阵列基板,其特征在于,所述遮光层包括独立设置的第一子遮光层及第二子遮光层;
所述栅极电极包括第一子栅极电极及第二子栅极电极;
所述缓冲层分别对应所述第一子遮光层和所述第二子遮光层设置一所述第一通孔,所述栅极绝缘层分别对应所述第一子栅极电极和所述第二子栅极电极设置一所述第二通孔,使所述第一子栅极电极通过对应的且连通的所述第一通孔和所述第二通孔与所述第一子遮光层电性连接,所述第二子栅极电极通过对应的且连通的所述第一通孔和所述第二通孔与所述第二子遮光层电性连接。
3.根据权利要求1所述的阵列基板,其特征在于,所述第一通孔和所述第二通孔均采用光刻和刻蚀工艺形成的。
4.根据权利要求1所述的阵列基板,其特征在于,所述通孔设置于栅极端子区域或者像素电极区域。
5.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板还包括依次形成在所述栅极电极上的层间绝缘层、源/漏电极、钝化层、有机绝缘层以及透明电极层;
其中,所述钝化层上设置有第三通孔,所述有机绝缘层上设置有第四通孔,所述透明电极层通过所述第三通孔及所述第四通孔与所述源/漏电极电性连接。
6.一种阵列基板的制造方法,其特征在于,所述方法包括:
在基板上依次形成遮光层、缓冲层、半导体层以及栅极绝缘层;
在所述缓冲层上形成第一通孔,以及在所述栅极绝缘层上形成第二通孔,以使所述遮光层部分裸露;
在所述栅极绝缘层上形成栅极电极,以使所述栅极电极通过连通的所述第一通孔和所述第二通孔与所述遮光层连接。
7.根据权利要求6所述的方法,其特征在于,所述步骤在基板上依次形成遮光层、缓冲层、半导体层以及栅极绝缘层具体为:
在基板上沉积遮光层并图形化,以形成第一子遮光层及第二子遮光层;
在所述第一子遮光层及第二子遮光层上形成缓冲层;
在所述缓冲层上沉积半导体层并图形化,以形成分别对应所述第一子遮光层及第二子遮光层的第一半导体小岛及第二半导体小岛;
在所述第一半导体小岛及第二半导体小岛上形成栅极绝缘层。
8.根据权利要求7所述的方法,其特征在于,在所述缓冲层上形成第一通孔,以及在所述栅极绝缘层上形成第二通孔,以使所述遮光层部分裸露的步骤具体为:
在所述缓冲层上分别对应所述第一子遮光层和所述第二子遮光层设置一所述第一通孔,在所述栅极绝缘层上分别对应所述第一子栅极电极和所述第二子栅极电极设置一所述第二通孔,以使所述第一遮光层及所述第二遮光层部分裸露。
9.根据权利要求8所述的方法,其特征在于,在所述栅极绝缘层上形成栅极电极,以使所述栅极电极通过连通的所述第一通孔和所述第二通孔与所述遮光层连接的步骤具体为:
在所述栅极绝缘层上形成栅极电极并图形化,以形成第一子栅极电极及第二子栅极电极;
其中,所述第一子栅极电极通过对应所述第一子遮光层设置的所述第一通孔及所述第二通孔与所述第一子遮光层电性连接,所述第二字栅极电极通过对应所述第二子遮光层设置的所述第一通孔及所述第二通孔与所述第二子遮光层电性连接。
10.一种液晶显示器,包括显示面板和背光光源,其特征在于,所述显示面板包括如权利要求1-5任一项所述的阵列基板。
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