CN104752343A - 双栅极氧化物半导体tft基板的制作方法及其结构 - Google Patents

双栅极氧化物半导体tft基板的制作方法及其结构 Download PDF

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Publication number
CN104752343A
CN104752343A CN201510175711.7A CN201510175711A CN104752343A CN 104752343 A CN104752343 A CN 104752343A CN 201510175711 A CN201510175711 A CN 201510175711A CN 104752343 A CN104752343 A CN 104752343A
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China
Prior art keywords
layer
gate
oxide semiconductor
semiconductor layer
source electrode
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CN201510175711.7A
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CN104752343B (zh
Inventor
葛世民
张合静
曾志远
苏智昱
李文辉
石龙强
吕晓文
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201510175711.7A priority Critical patent/CN104752343B/zh
Priority to PCT/CN2015/079476 priority patent/WO2016165186A1/zh
Priority to US14/763,822 priority patent/US9634032B2/en
Publication of CN104752343A publication Critical patent/CN104752343A/zh
Priority to US15/455,082 priority patent/US9768323B2/en
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    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Abstract

本发明提供一种双栅极氧化物半导体TFT基板的制作方法及其结构。该双栅极氧化物半导体TFT基板的制作方法使用半色调掩膜板进行一道光罩制程，既能够完成氧化物半导体层的图案化、又能够通过离子掺杂制得氧化物导体层(53’)；通过一道光罩制程同时对底栅绝缘层(31)与顶栅绝缘层(32)进行图案化处理；通过一道光罩制程同时制得第一顶栅极(71)、第一源极(81)、第一漏极(82)、第二顶栅极(72)、第二源极(83)、及第二漏极(84)；通过一道光罩制程同时对平坦层(9)、钝化层(8)、及顶栅绝缘层(32)进行图案化处理，光罩制程减少至五道，缩短了制作工序流程，提高了生产效率，降低了生产成本。

Description

双栅极氧化物半导体TFT基板的制作方法及其结构
技术领域
本发明涉及显示技术领域，尤其涉及一种适用于OLED的双栅极氧化物半导体TFT基板的制作方法及其结构。
背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示装置主要包括液晶显示装置(Liquid Crystal Display，LCD)及有机发光二极管显示装置(Organic Light Emitting Display，OLED)。
薄膜晶体管(TFT)是平面显示装置的重要组成部分。TFT可形成在玻璃基板或塑料基板上，通常作为开关部件和驱动部件用在诸如LCD、OLED等平面显示装置上。
氧化物半导体TFT技术是当前的热门技术。由于氧化物半导体具有较高的电子迁移率，而且相比低温多晶硅(LTPS)，氧化物半导体制程简单，与非晶硅制程相容性较高，可以应用于LCD、OLED平面显示装置等，且与高世代生产线兼容，可应用于大中小尺寸显示，具有良好的应用发展前景。
目前，在有源阵列平面显示装置中，TFT基板通常采用单栅极氧化物半导体薄膜晶体管(Single-Gate TFT)。双栅极氧化物半导体薄膜晶体管(Dual-Gate)相比单栅极氧化物半导体薄膜晶体管具有更优的性能，如电子迁移率更高，开态电流较大、亚阈值摆幅更小、阈值电压的稳定性及均匀性更好、栅极偏压及照光稳定性更好等。
在OLED显示装置中，阈值电压的重要性尤为突出，稳定、均匀的阈值电压能够使OLED的显示亮度较均匀，显示品质较高。如图1所示，现有技术中常见的适用于OLED的双栅极氧化物半导体TFT基板结构包括基板100，设于基板100上的第一底栅极210与第二底栅极220，设于基板100、第一底栅极210、与第二底栅极220上的栅极绝缘层300，分别位于第一底栅极210、与第二底栅极220上方设于栅极绝缘层300上的第一氧化物半导体层410、与第二氧化物半导体层420，设于第一氧化物半导体层410、第二氧化物半导体层420、与栅极绝缘层300上的刻蚀阻挡层500，设于刻蚀阻挡层500上的第一源/漏极610、及第二源/漏极620，设于第一源/漏极610、第二源/漏极620及刻蚀阻挡层500上的钝化层700，位于第一源/漏极610上方设于钝化层700上的第一顶栅极810，位于第二源/漏极620上方设于钝化层700上的第二顶栅极820，设于第一顶栅极810、第二顶栅极820、与钝化层700上的层间绝缘层900，设于层间绝缘层900上的第一平坦层910，设于第一平坦层910上的ITO阳极1100，及设于ITO阳极1100、与第一平坦层910上的第二平坦层920。
所述刻蚀阻挡层500对应第一氧化物半导体层410上方形成有两第一过孔510，对应第二氧化物半导体层420上方形成有两第二过孔520，所述第一源/漏极610、第二源/漏极620分别经由第一过孔510、第二过孔520与第一氧化物半导体层410、第二氧化物半导体层420相接触；所述钝化层700、层间绝缘层900、及第一平坦层910对应第一源/漏极610上方形成有第三过孔530，ITO阳极1100经由第三过孔530与第一源/漏极610相接触；第二平坦层920对应ITO阳极1100上方形成有第四过孔540，暴露出部分ITO阳极1100。
制作上述双栅极氧化物半导体TFT基板时，除基板100外，其它的每一结构层均通过一道光罩制程来进行图案化处理，所需的光罩制程次数较多。显然，现有的适用于OLED的双栅极氧化物半导体TFT基板的结构较复杂，其制作方法的工序流程较长，生产效率较低，制程成本较高。
发明内容
本发明的目的在于提供一种适用于OLED的双栅极氧化物半导体TFT基板的制作方法，能够减少光罩制程次数，缩短制作工序流程，提高生产效率，降低生产成本。
本发明的另一目的在于提供一种适用于OLED的双栅极氧化物半导体TFT基板结构，能够使得光罩制程次数减少，制作工序流程缩短，生产效率提高，生产成本降低。
为实现上述目的，本发明首先提供一种双栅极氧化物半导体TFT基板的制作方法，包括如下步骤：
步骤1、提供一基板，在该基板上沉积第一金属层，通过第一道光罩制程对所述第一金属层进行图案化处理，形成第一底栅极、与第二底栅极；
步骤2、在所述第一底栅极、第二底栅极、及基板上沉积底栅绝缘层；
步骤3、在所述底栅绝缘层上沉积氧化物半导体层，在氧化物半导体层上涂覆光阻层，使用半色调掩膜板进行第二道光罩制程：先对所述光阻层进行曝光、显影，得到分别位于所述第一底栅极、第二底栅极上方覆盖所述氧化物半导体层的第一光阻层、第二光阻层、及位于所述第一底栅极远离第二底栅极一侧的覆盖所述氧化物半导体层的第三光阻层；所述第一光阻层的两侧区域、第二光阻层的两侧区域、及第三光阻层的厚度小于所述第一光阻层的中间区域、及第二光阻层的中间区域的厚度；
再利用所述第一光阻层、第二光阻层、及第三光阻层对所述氧化物半导体层进行刻蚀，使所述氧化物半导体层图案化，得到分别位于所述第一底栅极、第二底栅极上方的第一氧化物半导体层、第二氧化物半导体层、及位于所述第一底栅极远离第二底栅极一侧的第三氧化物半导体层；
步骤4、先去除所述第一光阻层的两侧区域、第二光阻层的两侧区域、及第三光阻层；以余下的第一光阻层的中间区域、及第二光阻层的中间区域为遮蔽层，对所述第一氧化物半导体层的两侧区域、第二氧化物半导体层的两侧区域、及第三氧化物半导体层进行离子掺杂，使所述第一氧化物半导体层的两侧区域、及第二氧化物半导体层的两侧区域转变为导体，使第三氧化物半导体层转变为氧化物导体层；然后去除余下的第一光阻层的中间区域、及第二光阻层的中间区域；
步骤5、在所述第一氧化物半导体层、第二氧化物半导体层、氧化物导体层、及底栅绝缘层上沉积顶栅绝缘层，通过第三道光罩制程同时对所述顶栅绝缘层与底栅绝缘层进行图案化处理，形成分别位于所述第一氧化物半导体层两侧区域上方的第一过孔、位于所述第二氧化物半导体层两侧区域上方的第二过孔、位于所述氧化物导体层上方的第三过孔、及位于所述第一底栅极与第二底栅极之间暴露出部分第一底栅极的第四过孔；
步骤6、在所述顶栅绝缘层上沉积第二、第三金属层，通过第四道光罩制程对第二、第三金属层进行图案化处理，分别得到位于所述第一氧化物半导体层上方的第一顶栅极、位于所述第一顶栅极两侧的第一源极与第一漏极、位于所述第二氧化物半导体层上方的第二顶栅极、位于所述第二顶栅极两侧的第二源极与第二漏极；
所述第一源极与第一漏极分别经由所述第一过孔与所述第一氧化物半导体层的两侧区域相接触，所述第二源极与第二漏极分别经由所述第二过孔与所述第二氧化物半导体层的两侧区域相接触，所述第一源极经由所述第三过孔与所述氧化物导体层相接触，所述第二源极经由所述第四过孔与所述第一底栅极相接触；
步骤7、在所述第一顶栅极、第一源极、第一漏极、第二顶栅极、第二源极、第二漏极、及顶栅绝缘层上沉积钝化层；
步骤8、在所述钝化层上沉积平坦层，通过第五道光罩制程对所述平坦层、钝化层、及顶栅绝缘层同时进行图案化处理，得到位于所述氧化物导体层上方的第五过孔，以暴露出部分氧化物导体层，定义出发光层的形状；
所述第一底栅极、第一氧化物半导体层、第一源极、第一漏极、及第一顶栅极构成第一双栅极TFT，所述第二底栅极、第二氧化物半导体层、第二源极、第二漏极、及第二顶栅极构成第二双栅极TFT；所述氧化物导体层构成OLED的阳极。
所述步骤3采用物理气相沉积法沉积透明的氧化物半导体层。
所述步骤5采用干法刻蚀对所述顶栅绝缘层与底栅绝缘层同时进行图案化处理。
所述氧化物半导体层的材料为IGZO。
所述平坦层的材料为有机光阻。
所述第一底栅极、第一顶栅极、第一源极、第一漏极、第二底栅极、第二顶栅极、第二源极、及第二漏的的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
所述底栅绝缘层及顶栅绝缘层的材料为氮化硅、氧化硅、或二者的组合。
本发明还提供一种双栅极氧化物半导体TFT基板结构，包括基板、设于所述基板上的第一底栅极与第二底栅极、设于所述基板、第一底栅极、及第二底栅极上的底栅绝缘层、设于所述底栅绝缘层上位于所述第一底栅极上方的第一氧化物半导体层、设于所述底栅绝缘层上位于所述第二底栅极上方的第二氧化物半导体层、设于所述底栅绝缘层上位于第一底栅极远离第二底栅极一侧的氧化物导体层、设于所述第一氧化物半导体层、第二氧化物半导体层、氧化物导体层、及底栅绝缘层上的顶栅绝缘层、位于所述第一氧化物半导体层上方设于所述顶栅绝缘层上的第一顶栅极、分别位于所述第一顶栅极两侧设于所述顶栅绝缘层上的第一源极、及第一漏极、位于所述第二氧化物半导体层上方设于所述顶栅绝缘层上的第二顶栅极、分别位于所述第二顶栅极两侧设于所述顶栅绝缘层上的第二源极、及第二漏极、设于所述第一顶栅极、第一源极、第一漏极、第二顶栅极、第二源极、第二漏极、与顶栅绝缘层上的钝化层、及设于钝化层上的平坦层；
所述第一氧化物半导体层的两侧区域、及第二氧化物半导体层的两侧区域为离子掺杂的导体层；所述顶栅绝缘层对应所述第一氧化物半导体层两侧区域的上方分别设有第一过孔，对应所述第二氧化物半导体层两侧区域的上方分别设有第二过孔，对应所述氧化物导体层上方设有第三过孔；所述底栅绝缘层与顶栅绝缘层对应第一底栅极与第二底栅极之间设有第四过孔；所述顶栅绝缘层、钝化层、及平坦层对应所述氧化物导体层上方设有第五过孔；
所述第一源极与第一漏极分别经由所述第一过孔与所述第一氧化物半导体层的两侧区域相接触；所述第二源极与第二漏极分别经由所述第二过孔与所述第二氧化物半导体层的两侧区域相接触；所述第一源极经由所述第三过孔与所述氧化物导体层相接触；所述第二源极经由所述第四过孔与所述第一底栅极相接触；所述第五过孔暴露出部分氧化物导体层；
所述第一底栅极、第一氧化物半导体层、第一源极、第一漏极、及第一顶栅极构成第一双栅极TFT，所述第二底栅级、第二氧化物半导体层、第二源极、第二漏极、及第二顶栅极构成第二双栅极TFT；所述氧化物导体层构成OLED的阳极。
所述第一氧化物半导体层、与第二氧化物半导体层的材料为IGZO，所述氧化物导体层通过对IGZO半导体层进行离子掺杂制得。
所述平坦层的材料为有机光阻；所述底栅绝缘层及顶栅绝缘层的材料为氮化硅、氧化硅、或二者的组合；所述第一底栅极、第一顶栅极、第一源极、第一漏极、第二底栅极、第二顶栅极、第二源极、及第二漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
本发明的有益效果：本发明提供的一种双栅极氧化物半导体TFT基板的制作方法，使用半色调掩膜板进行一道光罩制程，既能够完成氧化物半导体层的图案化、又能够通过离子掺杂制得氧化物导体层，该氧化物导体层作为OLED的阳极替代现有技术中的ITO阳极；通过一道光罩制程同时对底栅绝缘层与顶栅绝缘层进行图案化处理；通过一道光罩制程同时制得第一源极、第一漏极、第二源极、第二漏极、第一顶栅极、与第二顶栅极；通过一道光罩制程同时对平坦层、钝化层、及顶栅绝缘层进行图案化处理，光罩制程减少至五道，缩短了制作工序流程，提高了生产效率，降低了生产成本。本发明提供的一种双栅极氧化物半导体TFT基板结构，通过设置氧化物导体层来作为OLED的阳极，并将第一源极、第一漏极、第二源极、第二漏极、第一顶栅极、与第二顶栅极均设置于顶栅绝缘层上，一方面能够简化TFT基板结构，一方面能够使得光罩制程次数减少，制作工序流程缩短，生产效率提高，生产成本降低。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的适用于OLED的双栅极氧化物半导体TFT基板结构的剖面示意图；
图2为本发明双栅极氧化物半导体TFT基板的制作方法的流程图；
图3为本发明双栅极氧化物半导体TFT基板的制作方法的步骤1的示意图；
图4为本发明双栅极氧化物半导体TFT基板的制作方法的步骤2的示意图；
图5为本发明双栅极氧化物半导体TFT基板的制作方法的步骤3的示意图；
图6为本发明双栅极氧化物半导体TFT基板的制作方法的步骤4的示意图；
图7为本发明双栅极氧化物半导体TFT基板的制作方法的步骤5的示意图；
图8为本发明双栅极氧化物半导体TFT基板的制作方法的步骤6的示意图；
图9为本发明双栅极氧化物半导体TFT基板的制作方法的步骤7的示意图；
图10为本发明双栅极氧化物半导体TFT基板的制作方法的步骤8的示意图暨本发明双栅极氧化物半导体TFT基板结构的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种适用于OLED的双栅极氧化物半导体TFT基板的制作方法，包括如下步骤：
步骤1、请参阅图3，提供一基板1，在该基板1上沉积第一金属层，通过第一道光罩制程对所述第一金属层进行图案化处理，形成第一底栅极21、与第二底栅极22。
具体地，所述基板1为透明基板，优选地，所述基板1为玻璃基板。
所述第一金属层的材料为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合，即所述第一底栅极21、及第二底栅极22的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
步骤2、请参阅图4，在所述第一底栅极21、第二底栅极22、及基板1上沉积底栅绝缘层31。
具体地，所述底栅绝缘层31的材料为氮化硅(SiNx)、氧化硅(SiOx)、或二者的组合。
步骤3、请参阅图5，在所述底栅绝缘层31上沉积氧化物半导体层，在氧化物半导体层上涂覆光阻层，使用半色调掩膜板(Half-Tone)进行第二道光罩制程：先对所述光阻层进行曝光、显影，得到分别位于所述第一底栅极21、第二底栅极22上方覆盖所述氧化物半导体层的第一光阻层41、第二光阻层42、及位于所述第一底栅极21远离第二底栅极22一侧的覆盖所述氧化物半导体层的第三光阻层43；所述第一光阻层41的两侧区域、第二光阻层42的两侧区域、及第三光阻层43的厚度小于所述第一光阻层41的中间区域、及第二光阻层42的中间区域的厚度；
再利用所述第一光阻层41、第二光阻层42、及第三光阻层43对所述氧化物半导体层进行刻蚀，使所述氧化物半导体层图案化，得到分别位于所述第一底栅极21、第二底栅极22上方的第一氧化物半导体层51、第二氧化物半导体层52、及位于所述第一底栅极21远离第二底栅极22一侧的第三氧化物半导体层53。
具体地，该步骤3采用物理气相沉积法(Physical Vapor Deposition，PVD)沉积氧化物半导体层。
所述氧化物半导体层的材料为铟镓锌氧化物(Indium Gallium ZincOxide，IGZO)。
步骤4、请参阅图6，先去除所述第一光阻层41的两侧区域、第二光阻层42的两侧区域、及第三光阻层43；以余下的第一光阻层41的中间区域、及第二光阻层42的中间区域为遮蔽层，对所述第一氧化物半导体层51的两侧区域、第二氧化物半导体层52的两侧区域、及第三氧化物半导体层53进行离子掺杂，使所述第一氧化物半导体层51的两侧区域、及第二氧化物半导体层52的两侧区域转变为导体，使第三氧化物半导体层53转变为氧化物导体层53’；然后去除余下的第一光阻层41的中间区域、及第二光阻层42的中间区域。
步骤5、请参阅图7，在所述第一氧化物半导体层51、第二氧化物半导体层52、氧化物导体层53’、及底栅绝缘层31上沉积顶栅绝缘层32，通过第三道光罩制程同时对所述顶栅绝缘层32与底栅绝缘层31进行图案化处理，形成分别位于所述第一氧化物半导体层51两侧区域上方的第一过孔91、位于所述第二氧化物半导体层52两侧区域上方的第二过孔92、位于所述氧化物导体层53’上方的第三过孔93、及位于所述第一底栅极21与第二底栅极22之间暴露出部分第一底栅极21的第四过孔94。
具体地，该步骤5采用干法刻蚀对所述顶栅绝缘层32与底栅绝缘层31同时进行图案化处理。
所述顶栅绝缘层32的材料为氮化硅、氧化硅、或二者的组合。
步骤6、请参阅图8，在所述顶栅绝缘层32上沉积第二、第三金属层，通过第四道光罩制程对第二、第三金属层进行图案化处理，分别得到位于所述第一氧化物半导体层51上方的第一顶栅极71、位于所述第一顶栅极71两侧的第一源极81与第一漏极82、位于所述第二氧化物半导体层52上方的第二顶栅极72、位于所述第二顶栅极72两侧的第二源极83与第二漏极84。
所述第一源极81与第一漏极82分别经由所述第一过孔91与所述第一氧化物半导体层51的两侧区域相接触，所述第二源极83与第二漏极84分别经由所述第二过孔92与所述第二氧化物半导体层52的两侧区域相接触，所述第一源极81经由所述第三过孔93与所述氧化物导体层53’相接触，所述第二源极83经由所述第四过孔94与所述第一底栅极21相接触。
具体地，所述第二、及第三金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合，即所述第一顶栅极71、第一源极81、第一漏极82、第二顶栅极72、第二源极83、及第二漏极84的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
步骤7、请参阅图9，在所述第一顶栅极71、第一源极81、第一漏极82、第二顶栅极72、第二源极83、第二漏极84、及顶栅绝缘层32上沉积钝化层8。
步骤8、请参阅图10，在所述钝化层8上沉积平坦层9，通过第五道光罩制程对所述平坦层9、钝化层8、及顶栅绝缘层32同时进行图案化处理，得到位于所述氧化物导体层53’上方的第五过孔95，以暴露出部分氧化物导体层53’，定义出发光层的形状。
所述第一底栅极21、第一氧化物半导体层51、第一源极81、第一漏极82、及第一顶栅极71构成第一双栅极TFT T1，所述第二底栅极22、第二氧化物半导体层52、第二源极83、第二漏极84、及第二顶栅极72构成第二双栅极TFT T2；所述氧化物导体层53’构成OLED的阳极。
上述双栅极氧化物半导体TFT基板的制作方法，使用半色调掩膜板进行一道光罩制程，既能够完成氧化物半导体层的图案化、又能够通过离子掺杂制得氧化物导体层53’；通过一道光罩制程同时对底栅绝缘层31与顶栅绝缘层32进行图案化处理；通过一道光罩制程同时制得第一顶栅极71、第一源极81、第一漏极82、第二顶栅极72、第二源极83、及第二漏极84；通过一道光罩制程同时对平坦层9、钝化层8、及顶栅绝缘层32进行图案化处理，光罩制程减少至五道，缩短了制作工序流程，提高了生产效率，降低了生产成本。
请参阅图10，本发明还提供一种适用于OLED的双栅极氧化物半导体TFT基板结构，包括基板1、设于所述基板1上的第一底栅极21与第二底栅极22、设于所述基板1、第一底栅极21、及第二底栅极22上的底栅绝缘层31、设于所述底栅绝缘层31上位于所述第一底栅极21上方的第一氧化物半导体层51、设于所述底栅绝缘层31上位于所述第二底栅极22上方的第二氧化物半导体层52、设于所述底栅绝缘层31上位于第一底栅极21远离第二底栅极22一侧的氧化物导体层53’、设于所述第一氧化物半导体层51、第二氧化物半导体层52、氧化物导体层53’、及底栅绝缘层31上的顶栅绝缘层32、位于所述第一氧化物半导体层51上方设于所述顶栅绝缘层32上的第一顶栅极71、分别位于所述第一顶栅极71两侧设于所述顶栅绝缘层32上的第一源极81、及第一漏极82、位于所述第二氧化物半导体层52上方设于所述顶栅绝缘层32上的第二顶栅极72、分别位于所述第二顶栅极72两侧设于所述顶栅绝缘层32上的第二源极83、及第二漏极84、设于所述第一顶栅极71、第一源极81、第一漏极82、第二顶栅极72、第二源极83、第二漏极84、与顶栅绝缘层32上的钝化层8、及设于钝化层8上的平坦层9。
所述第一氧化物半导体层51的两侧区域、及第二氧化物半导体层52的两侧区域为离子掺杂的导体层；所述顶栅绝缘层32对应所述第一氧化物半导体层51两侧区域的上方分别设有第一过孔91，对应所述第二氧化物半导体层52两侧区域的上方分别设有第二过孔92，对应所述氧化物导体层53’上方设有第三过孔93；所述底栅绝缘层31与顶栅绝缘层32对应第一底栅极21与第二底栅极22之间设有第四过孔94；所述顶栅绝缘层32、钝化层8、及平坦层9对应所述氧化物导体层53’上方设有第五过孔95。
所述第一源极81与第一漏极82分别经由所述第一过孔91与所述第一氧化物半导体层51的两侧区域相接触；所述第二源极83与第二漏极84分别经由所述第二过孔92与所述第二氧化物半导体层52的两侧区域相接触；所述第一源极81经由所述第三过孔93与所述氧化物导体层53’相接触；所述第二源极83经由所述第四过孔94与所述第一底栅极21相接触；所述第五过孔95暴露出部分氧化物导体层53’。
所述第一底栅极21、第一氧化物半导体层51、第一源极81、第一漏极82、及第一顶栅极71构成第一双栅极TFT T1，所述第二底栅极22、第二氧化物半导体层52、第二源极83、第二漏极84、及第二顶栅极72构成第二双栅极TFT T2；所述氧化物导体层53’构成OLED的阳极。
具体地，所述第一氧化物半导体层51、与第二氧化物半导体层52的材料为IGZO，所述氧化物导体层53’通过对IGZO半导体层进行离子掺杂制得。
所述平坦层9的材料为有机光阻；所述底栅绝缘层31及顶栅绝缘层32的材料为氮化硅、氧化硅、或二者的组合；所述第一底栅极21、第一顶栅极71、第一源极81、第一漏极82、第二底栅极22、第二顶栅极72、第二源极83、及第二漏极84的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
上述双栅极氧化物半导体TFT基板结构，设置氧化物导体层53’来作为OLED的阳极，且该氧化物导体层53’与所述第一、第二氧化物半导体层51、52经一道光罩制程制作；将第一顶栅极71、第一源极81、第一漏极82、第二顶栅极72、第二源极83、及第二漏极84均设置于顶栅绝缘层32上，一方面能够简化TFT基板结构，一方面能够使得光罩制程次数减少，制作工序流程缩短，生产效率提高，生产成本降低。
综上所述，本发明的双栅极氧化物半导体TFT基板的制作方法，使用半色调掩膜板进行一道光罩制程，既能够完成氧化物半导体层的图案化、又能够通过离子掺杂制得氧化物导体层，该氧化物导体层作为OLED的阳极替代现有技术中的ITO阳极；通过一道光罩制程同时对底栅绝缘层与顶栅绝缘层进行图案化处理；通过一道光罩制程同时制得第一源极、第一漏极、第二源极、第二漏极、第一顶栅极、与第二顶栅极；通过一道光罩制程同时对平坦层、钝化层、及顶栅绝缘层进行图案化处理，光罩制程减少至五道，缩短了制作工序流程，提高了生产效率，降低了生产成本。本发明的双栅极氧化物半导体TFT基板结构，通过设置氧化物导体层来作为OLED的阳极，并将第一源极、第一漏极、第二源极、第二漏极、第一顶栅极、与第二顶栅极均设置于顶栅绝缘层上，一方面能够简化TFT基板结构，一方面能够使得光罩制程次数减少，制作工序流程缩短，生产效率提高，生产成本降低。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种双栅极氧化物半导体TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(1)，在该基板(1)上沉积第一金属层，通过第一道光罩制程对所述第一金属层进行图案化处理，形成第一底栅极(21)、与第二底栅极(22)；
步骤2、在所述第一底栅极(21)、第二底栅极(22)、及基板(1)上沉积底栅绝缘层(31)；
步骤3、在所述底栅绝缘层(31)上沉积氧化物半导体层，在氧化物半导体层上涂覆光阻层，使用半色调掩膜板进行第二道光罩制程：先对所述光阻层进行曝光、显影，得到分别位于所述第一底栅极(21)、第二底栅极(22)上方覆盖所述氧化物半导体层的第一光阻层(41)、第二光阻层(42)、及位于所述第一底栅极(21)远离第二底栅极(22)一侧的覆盖所述氧化物半导体层的第三光阻层(43)；所述第一光阻层(41)的两侧区域、第二光阻层(42)的两侧区域、及第三光阻层(43)的厚度小于所述第一光阻层(41)的中间区域、及第二光阻层(42)的中间区域的厚度；
再利用所述第一光阻层(41)、第二光阻层(42)、及第三光阻层(43)对所述氧化物半导体层进行刻蚀，使所述氧化物半导体层图案化，得到分别位于所述第一底栅极(21)、第二底栅极(22)上方的第一氧化物半导体层(51)、第二氧化物半导体层(52)、及位于所述第一底栅极(21)远离第二底栅极(22)一侧的第三氧化物半导体层(53)；
步骤4、先去除所述第一光阻层(41)的两侧区域、第二光阻层(42)的两侧区域、及第三光阻层(43)；以余下的第一光阻层(41)的中间区域、及第二光阻层(42)的中间区域为遮蔽层，对所述第一氧化物半导体层(51)的两侧区域、第二氧化物半导体层(52)的两侧区域、及第三氧化物半导体层(53)进行离子掺杂，使所述第一氧化物半导体层(51)的两侧区域、及第二氧化物半导体层(52)的两侧区域转变为导体，使第三氧化物半导体层(53)转变为氧化物导体层(53’)；然后去除余下的第一光阻层(41)的中间区域、及第二光阻层(42)的中间区域；
步骤5、在所述第一氧化物半导体层(51)、第二氧化物半导体层(52)、氧化物导体层(53’)、及底栅绝缘层(31)上沉积顶栅绝缘层(32)，通过第三道光罩制程同时对所述顶栅绝缘层(32)与底栅绝缘层(31)进行图案化处理，形成分别位于所述第一氧化物半导体层(51)两侧区域上方的第一过孔(91)、位于所述第二氧化物半导体层(52)两侧区域上方的第二过孔(92)、位于所述氧化物导体层(53’)上方的第三过孔(93)、及位于所述第一底栅极(21)与第二底栅极(22)之间暴露出部分第一底栅极(21)的第四过孔(94)；
步骤6、在所述顶栅绝缘层(32)上沉积第二、第三金属层，通过第四道光罩制程对第二、第三金属层进行图案化处理，分别得到位于所述第一氧化物半导体层(51)上方的第一顶栅极(71)、位于所述第一顶栅极(71)两侧的第一源极(81)与第一漏极(82)、位于所述第二氧化物半导体层(52)上方的第二顶栅极(72)、位于所述第二顶栅极(72)两侧的第二源极(83)与第二漏极(84)；
所述第一源极(81)与第一漏极(82)分别经由所述第一过孔(91)与所述第一氧化物半导体层(51)的两侧区域相接触，所述第二源极(83)与第二漏极(84)分别经由所述第二过孔(92)与所述第二氧化物半导体层(52)的两侧区域相接触，所述第一源极(81)经由所述第三过孔(93)与所述氧化物导体层(53’)相接触，所述第二源极(83)经由所述第四过孔(94)与所述第一底栅极(21)相接触；
步骤7、在所述第一顶栅极(71)、第一源极(81)、第一漏极(82)、第二顶栅极(72)、第二源极(83)、第二漏极(84)、及顶栅绝缘层(32)上沉积钝化层(8)；
步骤8、在所述钝化层(8)上沉积平坦层(9)，通过第五道光罩制程对所述平坦层(9)、钝化层(8)、及顶栅绝缘层(32)同时进行图案化处理，得到位于所述氧化物导体层(53’)上方的第五过孔(95)，以暴露出部分氧化物导体层(53’)，定义出发光层的形状；
所述第一底栅极(21)、第一氧化物半导体层(51)、第一源极(81)、第一漏极(82)、及第一顶栅极(71)构成第一双栅极TFT(T1)，所述第二底栅极(22)、第二氧化物半导体层(52)、第二源极(83)、第二漏极(84)、及第二顶栅极(72)构成第二双栅极TFT(T2)；所述氧化物导体层(53’)构成OLED的阳极。
2.如权利要求1所述的双栅极氧化物半导体TFT基板的制作方法，其特征在于，所述步骤3采用物理气相沉积法沉积透明的氧化物半导体层。
3.如权利要求1所述的双栅极氧化物半导体TFT基板的制作方法，其特征在于，所述步骤5采用干法刻蚀对所述顶栅绝缘层(32)与底栅绝缘层(31)同时进行图案化处理。
4.如权利要求1所述的双栅极氧化物半导体TFT基板的制作方法，其特征在于，所述氧化物半导体层的材料为IGZO。
5.如权利要求1所述的双栅极氧化物半导体TFT基板的制作方法，其特征在于，所述平坦层(9)的材料为有机光阻。
6.如权利要求1所述的双栅极氧化物半导体TFT基板的制作方法，其特征在于，所述第一底栅极(21)、第一顶栅极(71)、第一源极(81)、第一漏极(82)、第二底栅极(22)、第二顶栅极(72)、第二源极(83)、及第二漏极(84)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
7.如权利要求1所述的双栅极氧化物半导体TFT基板的制作方法，其特征在于，所述底栅绝缘层(31)、及顶栅绝缘层(32)的材料为氮化硅、氧化硅、或二者的组合。
8.一种双栅极氧化物半导体TFT基板结构，其特征在于，包括基板(1)、设于所述基板(1)上的第一底栅极(21)与第二底栅极(22)、设于所述基板(1)、第一底栅极(21)、及第二底栅极(22)上的底栅绝缘层(31)、设于所述底栅绝缘层(31)上位于所述第一底栅极(21)上方的第一氧化物半导体层(51)、设于所述底栅绝缘层(31)上位于所述第二底栅极(22)上方的第二氧化物半导体层(52)、设于所述底栅绝缘层(31)上位于第一底栅极(21)远离第二底栅极(22)一侧的氧化物导体层(53’)、设于所述第一氧化物半导体层(51)、第二氧化物半导体层(52)、氧化物导体层(53’)、及底栅绝缘层(31)上的顶栅绝缘层(32)、位于所述第一氧化物半导体层(51)上方设于所述顶栅绝缘层(32)上的第一顶栅极(71)、分别位于所述第一顶栅极(71)两侧设于所述顶栅绝缘层(32)上的第一源极(81)、及第一漏极(82)、位于所述第二氧化物半导体层(52)上方设于所述顶栅绝缘层(32)上的第二顶栅极(72)、分别位于所述第二顶栅极(72)两侧设于所述顶栅绝缘层(32)上的第二源极(83)、及第二漏极(84)、设于所述第一顶栅极(71)、第一源极(81)、第一漏极(82)、第二顶栅极(72)、第二源极(83)、第二漏极(84)、与顶栅绝缘层(32)上的钝化层(8)、及设于钝化层(8)上的平坦层(9)；
所述第一氧化物半导体层(51)的两侧区域、及第二氧化物半导体层(52)的两侧区域为离子掺杂的导体层；所述顶栅绝缘层(32)对应所述第一氧化物半导体层(51)两侧区域的上方分别设有第一过孔(91)，对应所述第二氧化物半导体层(52)两侧区域的上方分别设有第二过孔(92)，对应所述氧化物导体层(53’)上方设有第三过孔(93)；所述底栅绝缘层(31)与顶栅绝缘层(32)对应第一底栅极(21)与第二底栅极(22)之间设有第四过孔(94)；所述顶栅绝缘层(32)、钝化层(8)、及平坦层(9)对应所述氧化物导体层(53’)上方设有第五过孔(95)；
所述第一源极(81)与第一漏极(82)分别经由所述第一过孔(91)与所述第一氧化物半导体层(51)的两侧区域相接触；所述第二源极(83)与第二漏极(84)分别经由所述第二过孔(92)与所述第二氧化物半导体层(52)的两侧区域相接触；所述第一源极(81)经由所述第三过孔(93)与所述氧化物导体层(53’)相接触；所述第二源极(83)经由所述第四过孔(94)与所述第一底栅极(21)相接触；所述第五过孔(95)暴露出部分氧化物导体层(53’)；
所述第一底栅极(21)、第一氧化物半导体层(51)、第一源极(81)、第一漏极(82)、及第一顶栅极(71)构成第一双栅极TFT(T1)，所述第二底栅极(22)、第二氧化物半导体层(52)、第二源极(83)、第二漏极(84)、及第二顶栅极(72)构成第二双栅极TFT(T2)；所述氧化物导体层(53’)构成OLED的阳极。
9.如权利要求8所述的双栅极氧化物半导体TFT基板结构，其特征在于，所述第一氧化物半导体层(51)、与第二氧化物半导体层(52)的材料为IGZO，所述氧化物导体层(53’)通过对IGZO半导体层进行离子掺杂制得。
10.如权利要求8所述的双栅极氧化物半导体TFT基板结构，其特征在于，所述平坦层(9)的材料为有机光阻；所述底栅绝缘层(31)及顶栅绝缘层(32)的材料为氮化硅、氧化硅、或二者的组合；所述第一底栅极(21)、第一顶栅极(71)、第一源极(81)、第一漏极(82)、第二底栅极(22)、第二顶栅极(72)、第二源极(83)、及第二漏极(84)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
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