CN105390443B - Tft基板的制作方法 - Google Patents

Tft基板的制作方法 Download PDF

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CN105390443B
CN105390443B CN201510883687.2A CN201510883687A CN105390443B CN 105390443 B CN105390443 B CN 105390443B CN 201510883687 A CN201510883687 A CN 201510883687A CN 105390443 B CN105390443 B CN 105390443B
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tft substrate
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CN105390443A (zh
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张晓星
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种TFT基板的制作方法，在对非晶硅层进行离子植入诱导结晶后，无需将得到的多晶硅层表面的离子诱导层完全去除，而是通过半色调光罩工艺，仅仅去除沟道区的离子诱导层，且后续的源/漏极接触区也不需要再次进行离子植入，从而节省了再次进行离子植入所需的光罩；同时源/漏极也在所述半色调光罩下完成制作，从而节省了制作源/漏极所需的光罩；并且因为先制作源/漏极，所以省去了层间绝缘层的制作，从而节省了制作层间绝缘层所需的光罩；本发明的TFT基板的制作方法通过使用半色调光罩工艺，将现有技术所需的九道光罩缩减至六道光罩，有效简化了制程，提高了生产效率，节省了生产成本。

Description

TFT基板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法。
背景技术
薄膜晶体管(Thin Film Transistor，简称TFT)是目前液晶显示装置(LiquidCrystal Display，简称LCD)和有源矩阵驱动式有机电致发光显示装置(Active MatrixOrganic Light-Emitting Diode，简称AMOLED)中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。
低温多晶硅(Low Temperature Poly-silicon，LTPS)技术是新一代TFT基板的制造技术，与传统非晶硅(a-Si)技术的最大差异在于，低温多晶硅显示器反应速度较快，且有高亮度、高解析度与低耗电量等优点。
目前LTPS结晶工艺有准分子激光退火处理(Excimer LaserAnneal，ELA)技术和固相结晶化(Solid Phase Crystallization，SPC)技术。其中SPC技术因为大尺寸化容易且有较高的成本优势，成为大家争先研究的方向。在传统SPC方向上又包括直接高温长时间加热烘烤方式和离子诱导方式。在离子诱导结晶方式中有利用Ni(镍)或者B(硼)等诱导离子的结晶方式。
在诱导SPC方式中在植入离子完成诱导结晶后，为了形成半导体层，需要将原本植入诱导离子的a-Si(非晶硅)去除用以形成半导体的有源层。后续因为需要做源/漏极的接触区域，又需要对和源/漏极接触的有源层区域植入硼离子或者磷离子，从而实现较好的接触效果。
请参阅图1至图8，现有TFT基板的制作方法主要包括如下步骤：
步骤1、如图1所示，提供基板100，在所述基板100上沉积缓冲层200；在所述缓冲层200上沉积非晶硅层300。
步骤2、如图2所示，对所述非晶硅层300进行离子植入，并进行高温烘烤使非晶硅转变为多晶硅，得到位于缓冲层200上的多晶硅层400、及位于多晶硅层400上的离子诱导层500。
步骤3、如图3所示，采用蚀刻工艺将离子诱导层500去除，得到多晶硅层400。
步骤4、如图4所示，对所述多晶硅层400进行图案化处理，得到岛状半导体层410。
步骤5、如图5所示，在所述岛状半导体层410与缓冲层200上涂布光阻，曝光、显影后得到光阻层500。
步骤6、如图6所示，以所述光阻层500为遮蔽层，对所述岛状半导体层410进行硼离子植入，于所述岛状半导体层410上得到源/漏极接触区600。
步骤7、如图7所示，剥离光阻层500，在所述岛状半导体层410与缓冲层200上沉积栅极绝缘层700；在所述栅极绝缘层700上形成栅极800。
步骤8、如图8所示，在所述栅极绝缘层700、栅极800上形成层间绝缘层900、源/漏极910、平坦层920、阴极930、像素定义层940，最后进行OLED 950的蒸镀，进而完成TFT基板的整个制程，需要九次光罩定义才可以进行OLED蒸镀，制程成本较高。
因此，有必要提供一种TFT基板的制作方法，以解决上述问题。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，可有效简化制程，提高生产效率，节省生产成本。
为实现上述目的，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上沉积缓冲层，在所述缓冲层上沉积非晶硅层；
步骤2、对所述非晶硅层进行离子植入，并进行高温烘烤使非晶硅结晶转变为多晶硅，得到位于缓冲层上的多晶硅层、及位于多晶硅层上的离子诱导层；
步骤3、在所述离子诱导层上沉积第一金属层，在所述第一金属层上涂布光阻，提供半色调光罩，利用所述半色调光罩对所述光阻进行曝光、显影，得到相互间隔的第一光阻段与第二光阻段；所述第一光阻段的两侧区域的厚度大于中间区域的厚度；
步骤4、以所述第一光阻段与第二光阻段为遮蔽层，对所述第一金属层、离子诱导层、多晶硅层进行蚀刻，得到岛状半导体与源/漏极区域；
步骤5、对所述第一光阻段与第二光阻段进行灰化处理，去除所述第一光阻段的中间区域，以剩余的第一光阻段为遮蔽层，对所述岛状半导体与源/漏极区域中的第一金属层、及离子诱导层进行蚀刻，得到具有沟道区的岛状半导体层、位于所述岛状半导体层上的源/漏极接触区、及位于所述源/漏极接触区上的源/漏极；剥离剩余的第一光阻段与第二光阻段；
步骤6、在所述源/漏极上沉积栅极绝缘层；在所述栅极绝缘层上沉积第二金属层，并对所述第二金属层进行图案化处理，形成栅极；
步骤7、在所述栅极绝缘层、栅极上形成保护层；在所述保护层上形成平坦层；在所述平坦层、保护层、及栅极绝缘层上对应源/漏极的上方形成过孔；
步骤8、在所述平坦层上制作阴极，所述阴极经由所述过孔与所述源/漏极相接触；在所述平坦层上形成像素定义层，并在所述像素定义层上形成开口以暴露出部分阴极；在所述开口处蒸镀OLED。
所述步骤1中，所述基板为玻璃基板。
所述步骤1中，所述缓冲层为氮化硅层、氧化硅层、或二者的复合层；所述缓冲层的厚度为
所述步骤1中，所述非晶硅层的厚度为
所述步骤2中，在所述非晶硅层中植入的离子为硼离子或镍离子。
所述步骤3中，所述第一金属层为钼、铝、铜中的一种或多种的堆栈组合；所述第一金属层的厚度为
所述步骤6中，所述栅极绝缘层为氮化硅层、氧化硅层、或二者的组合；所述栅极绝缘层的厚度为
所述步骤6中，所述第二金属层为钼、铝、铜中的一种或多种的堆栈组合；所述第二金属层的厚度为
所述步骤7中，所述保护层为氮化硅层、氧化硅层、或二者的组合；所述保护层的厚度为
所述步骤8中，所述阴极为氧化铟锡/银/氧化铟锡复合结构或单层金属银；所述阴极的厚度为
本发明的有益效果：本发明的TFT基板的制作方法，在对非晶硅层进行离子植入诱导结晶后，无需将得到的多晶硅层表面的离子诱导层完全去除，而是通过半色调光罩工艺，仅仅去除沟道区的离子诱导层，且后续的源/漏极接触区也不需要再次进行离子植入，从而节省了再次进行离子植入所需的光罩；同时源/漏极也在所述半色调光罩下完成制作，从而节省了制作源/漏极所需的光罩；并且因为先制作源/漏极所以省去了层间绝缘层的制作，从而节省了制作层间绝缘层所需的光罩；本发明的TFT基板的制作方法通过使用半色调光罩工艺，将现有技术所需的九道光罩缩减至六道光罩，有效简化了制程，提高了生产效率，节省了生产成本。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为一种现有的TFT基板的制作方法的步骤1的示意图；
图2为一种现有的TFT基板的制作方法的步骤2的示意图；
图3为一种现有的TFT基板的制作方法的步骤3的示意图；
图4为一种现有的TFT基板的制作方法的步骤4的示意图；
图5为一种现有的TFT基板的制作方法的步骤5的示意图；
图6为一种现有的TFT基板的制作方法的步骤6的示意图；
图7为一种现有的TFT基板的制作方法的步骤7的示意图；
图8为一种现有的TFT基板的制作方法的步骤8的示意图；
图9为本发明的TFT基板的制作方法的示意流程图；
图10为本发明的TFT基板的制作方法的步骤1的示意图；
图11为本发明的TFT基板的制作方法的步骤2的示意图；
图12为本发明的TFT基板的制作方法的步骤3的示意图；
图13为本发明的TFT基板的制作方法的步骤4的示意图；
图14为本发明的TFT基板的制作方法的步骤5的示意图；
图15为本发明的TFT基板的制作方法的步骤6的示意图；
图16为本发明的TFT基板的制作方法的步骤7的示意图；
图17为本发明的TFT基板的制作方法的步骤8的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图9，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图10所示，提供基板1，在所述基板1上沉积缓冲层2，在所述缓冲层2上沉积非晶硅层3。
具体地，所述基板1为玻璃基板。
具体地，所述缓冲层2为氮化硅(SiNx)层、氧化硅(SiOx)层、或二者的复合层；所述缓冲层2的厚度为
具体地，所述非晶硅层3的厚度为
步骤2、如图11所示，对所述非晶硅层3进行离子植入，并进行高温烘烤使非晶硅结晶转变为多晶硅，得到位于缓冲层2上的多晶硅层4、及位于多晶硅层4上的离子诱导层5。所述离子诱导层5可直接接触源/漏极。
具体地，在所述非晶硅层3中植入的离子为硼离子或镍离子。
步骤3、如图12所示，在所述离子诱导层5上沉积第一金属层60，在所述第一金属层60上涂布光阻，提供半色调光罩，利用所述半色调光罩对所述光阻进行曝光、显影，得到相互间隔的第一光阻段51与第二光阻段52；所述第一光阻段51的两侧区域511的厚度大于中间区域512的厚度。
具体地，所述第一金属层60为钼(Mo)、铝(Al)、铜(Cu)中的一种或多种的堆栈组合；所述第一金属层60的厚度为
步骤4、如图13所示，以所述第一光阻段51与第二光阻段52为遮蔽层，对所述第一金属层60、离子诱导层5、多晶硅层4进行蚀刻，得到岛状半导体与源/漏极区域61。
步骤5、如图14所示，对所述第一光阻段51与第二光阻段52进行灰化处理，去除所述第一光阻段51的中间区域512，以剩余的第一光阻段51为遮蔽层，对所述岛状半导体与源/漏极区域61中的第一金属层60、及离子诱导层5进行蚀刻，得到具有沟道区41的岛状半导体层40、位于所述岛状半导体层40上的源/漏极接触区50、及位于所述源/漏极接触区50上的源/漏极6；剥离剩余的第一光阻段51与第二光阻段52。
步骤6、如图15所示，在所述源/漏极6上沉积栅极绝缘层7；在所述栅极绝缘层7上沉积第二金属层，并对所述第二金属层进行图案化处理，形成栅极8。
具体地，所述栅极绝缘层7为氮化硅层、氧化硅层、或二者的组合；所述栅极绝缘层7的厚度为
具体地，所述第二金属层为钼、铝、铜中的一种或多种的堆栈组合；所述第二金属层的厚度为
步骤7、如图16所示，在所述栅极绝缘层7、栅极8上形成保护层9；在所述保护层9上形成平坦层10；在所述平坦层10、保护层9、及栅极绝缘层7上对应源/漏极6的上方形成过孔91。
具体地，所述保护层9为氮化硅层、氧化硅层、或二者的组合；所述保护层9的厚度为
步骤8、如图17所示，在所述平坦层10上制作阴极11，所述阴极11经由所述过孔91与所述源/漏极6相接触；在所述平坦层10上形成像素定义层12，并在所述像素定义层12上形成开口121以暴露出部分阴极11；在所述开口121处蒸镀OLED13。
具体地，所述阴极11为氧化铟锡(ITO)/银(Ag)/氧化铟锡(ITO)复合结构或单层金属银；所述阴极11的厚度为
综上所述，本发明的TFT基板的制作方法，在对非晶硅层进行离子植入诱导结晶后，无需将得到的多晶硅层表面的离子诱导层完全去除，而是通过半色调光罩工艺，仅仅去除沟道区的离子诱导层，且后续的源/漏极接触区也不需要再次进行离子植入，从而节省了再次进行离子植入所需的光罩；同时源/漏极也在所述半色调光罩下完成制作，从而节省了制作源/漏极所需的光罩；并且因为先制作源/漏极所以省去了层间绝缘层的制作，从而节省了制作层间绝缘层所需的光罩；本发明的TFT基板的制作方法通过使用半色调光罩工艺，将现有技术所需的九道光罩缩减至六道光罩，有效简化了制程，提高了生产效率，节省了生产成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (9)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供基板(1)，在所述基板(1)上沉积缓冲层(2)，在所述缓冲层(2)上沉积非晶硅层(3)；
步骤2、对所述非晶硅层(3)进行离子植入，并进行高温烘烤使非晶硅结晶转变为多晶硅，得到位于缓冲层(2)上的多晶硅层(4)、及位于多晶硅层(4)上的离子诱导层(5)；
步骤3、在所述离子诱导层(5)上沉积第一金属层(60)，在所述第一金属层(60)上涂布光阻，提供半色调光罩，利用所述半色调光罩对所述光阻进行曝光、显影，得到相互间隔的第一光阻段(51)与第二光阻段(52)；所述第一光阻段(51)的两侧区域(511)的厚度大于中间区域(512)的厚度；
步骤4、以所述第一光阻段(51)与第二光阻段(52)为遮蔽层，对所述第一金属层(60)、离子诱导层(5)、多晶硅层(4)进行蚀刻，得到岛状半导体与源/漏极区域(61)；
步骤5、对所述第一光阻段(51)与第二光阻段(52)进行灰化处理，去除所述第一光阻段(51)的中间区域(512)，以剩余的第一光阻段(51)为遮蔽层，对所述岛状半导体与源/漏极区域(61)中的第一金属层(60)、及离子诱导层(5)进行蚀刻，得到具有沟道区(41)的岛状半导体层(40)、位于所述岛状半导体层(40)上的源/漏极接触区(50)、及位于所述源/漏极接触区(50)上的源/漏极(6)；剥离剩余的第一光阻段(51)与第二光阻段(52)；
步骤6、在所述源/漏极(6)上沉积栅极绝缘层(7)；在所述栅极绝缘层(7)上沉积第二金属层，并对所述第二金属层进行图案化处理，形成栅极(8)；
步骤7、在所述栅极绝缘层(7)、栅极(8)上形成保护层(9)；在所述保护层(9)上形成平坦层(10)；在所述平坦层(10)、保护层(9)、及栅极绝缘层(7)上对应源/漏极(6)的上方形成过孔(91)；
步骤8、在所述平坦层(10)上制作阴极(11)，所述阴极(11)经由所述过孔(91)与所述源/漏极(6)相接触；在所述平坦层(10)上形成像素定义层(12)，并在所述像素定义层(12)上形成开口(121)以暴露出部分阴极(11)；在所述开口(121)处蒸镀OLED(13)；
所述步骤1中，所述非晶硅层(3)的厚度为
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤1中，所述基板(1)为玻璃基板。
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤1中，所述缓冲层(2)为氮化硅层、氧化硅层、或二者的组合；所述缓冲层(2)的厚度为
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤2中，在所述非晶硅层(3)中植入的离子为硼离子或镍离子。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤3中，所述第一金属层(60)为钼、铝、铜中的一种或多种的堆栈组合；所述第一金属层(60)的厚度为
6.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤6中，所述栅极绝缘层(7)为氮化硅层、氧化硅层、或二者的组合；所述栅极绝缘层(7)的厚度为
7.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤6中，所述第二金属层为钼、铝、铜中的一种或多种的堆栈组合；所述第二金属层的厚度为
8.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤7中，所述保护层(9)为氮化硅层、氧化硅层、或二者的组合；所述保护层(9)的厚度为
9.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤8中，所述阴极(11)为氧化铟锡/银/氧化铟锡复合结构或单层金属银；所述阴极(11)的厚度为
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