CN1725512A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1725512A CN1725512A CNA2005100821165A CN200510082116A CN1725512A CN 1725512 A CN1725512 A CN 1725512A CN A2005100821165 A CNA2005100821165 A CN A2005100821165A CN 200510082116 A CN200510082116 A CN 200510082116A CN 1725512 A CN1725512 A CN 1725512A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims description 24
- 238000002425 crystallisation Methods 0.000 claims abstract description 148
- 239000003990 capacitor Substances 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 74
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 230000008025 crystallization Effects 0.000 claims description 123
- 239000000758 substrate Substances 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 49
- 238000005516 engineering process Methods 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000001939 inductive effect Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000012212 insulator Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 65
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000007769 metal material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040050916A KR100712112B1 (ko) | 2004-06-30 | 2004-06-30 | 반도체 소자 및 그 제조 방법 |
KR50916/04 | 2004-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1725512A true CN1725512A (zh) | 2006-01-25 |
CN100552976C CN100552976C (zh) | 2009-10-21 |
Family
ID=35512959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100821165A Active CN100552976C (zh) | 2004-06-30 | 2005-06-29 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7423309B2 (zh) |
JP (1) | JP4095074B2 (zh) |
KR (1) | KR100712112B1 (zh) |
CN (1) | CN100552976C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105470312A (zh) * | 2016-02-19 | 2016-04-06 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜晶体管及其制造方法 |
WO2017000335A1 (zh) * | 2015-07-01 | 2017-01-05 | 深圳市华星光电技术有限公司 | Tft背板的制作方法及其结构 |
CN109599343A (zh) * | 2018-12-25 | 2019-04-09 | 惠科股份有限公司 | 薄膜晶体管及其制作方法 |
CN109742028A (zh) * | 2018-12-25 | 2019-05-10 | 惠科股份有限公司 | 一种薄膜晶体管的制作方法、薄膜晶体管和显示面板 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581317B2 (en) * | 2008-08-27 | 2013-11-12 | Texas Instruments Incorporated | SOI MuGFETs having single gate electrode level |
KR101040984B1 (ko) * | 2008-09-09 | 2011-06-16 | 경희대학교 산학협력단 | 비정질 물질의 상변화 방법 |
CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
KR101809661B1 (ko) * | 2011-06-03 | 2017-12-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그 제조 방법 및 이를 포함하는 유기 발광 표시 장치 |
US8486780B2 (en) * | 2011-08-29 | 2013-07-16 | Intermolecular, Inc. | Doped electrode for dram applications |
WO2016187136A1 (en) * | 2015-05-15 | 2016-11-24 | Veriskin, Inc. | Cutaneous blood flow monitoring device |
WO2018048517A1 (en) * | 2016-09-08 | 2018-03-15 | Industrial Scientific Corporation | Combustible gas sensing element with cantilever support |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3535463B2 (ja) * | 1993-03-22 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体回路の作製方法 |
TW317643B (zh) * | 1996-02-23 | 1997-10-11 | Handotai Energy Kenkyusho Kk | |
KR19980077750A (ko) * | 1997-04-22 | 1998-11-16 | 윤종용 | 박막 트랜지스터 액정표시장치(tft-lcd) 및 그 제조방법 |
US6278130B1 (en) * | 1998-05-08 | 2001-08-21 | Seung-Ki Joo | Liquid crystal display and fabricating method thereof |
US6930732B2 (en) * | 2000-10-11 | 2005-08-16 | Lg.Philips Lcd Co., Ltd. | Array substrate for a liquid crystal display |
KR100439345B1 (ko) * | 2000-10-31 | 2004-07-07 | 피티플러스(주) | 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법 |
KR100390522B1 (ko) * | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
KR100566894B1 (ko) * | 2001-11-02 | 2006-04-04 | 네오폴리((주)) | Milc를 이용한 결정질 실리콘 tft 패널 및 제작방법 |
KR100458710B1 (ko) | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
JP2003297750A (ja) * | 2002-04-05 | 2003-10-17 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR100496287B1 (ko) * | 2002-08-03 | 2005-06-20 | 삼성에스디아이 주식회사 | 실리콘 박막의 결정화 방법, 이를 이용한 박막 트랜지스터및 상기 박막 트랜지스터를 구비한 평판 디스플레이 소자 |
US6800510B2 (en) | 2002-11-06 | 2004-10-05 | Hannstar Display Corporation | Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display |
KR100466628B1 (ko) * | 2002-11-12 | 2005-01-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
KR100570974B1 (ko) * | 2003-06-25 | 2006-04-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 |
-
2004
- 2004-06-30 KR KR1020040050916A patent/KR100712112B1/ko active IP Right Grant
-
2005
- 2005-03-10 JP JP2005068160A patent/JP4095074B2/ja active Active
- 2005-06-10 US US11/149,236 patent/US7423309B2/en active Active
- 2005-06-29 CN CNB2005100821165A patent/CN100552976C/zh active Active
-
2008
- 2008-08-04 US US12/185,229 patent/US7772061B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017000335A1 (zh) * | 2015-07-01 | 2017-01-05 | 深圳市华星光电技术有限公司 | Tft背板的制作方法及其结构 |
CN105470312A (zh) * | 2016-02-19 | 2016-04-06 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜晶体管及其制造方法 |
US10062771B2 (en) | 2016-02-19 | 2018-08-28 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Low temperature poly-silicon thin film transistor and method of manufacturing the same |
CN109599343A (zh) * | 2018-12-25 | 2019-04-09 | 惠科股份有限公司 | 薄膜晶体管及其制作方法 |
CN109742028A (zh) * | 2018-12-25 | 2019-05-10 | 惠科股份有限公司 | 一种薄膜晶体管的制作方法、薄膜晶体管和显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US7423309B2 (en) | 2008-09-09 |
US20080286912A1 (en) | 2008-11-20 |
US20060001025A1 (en) | 2006-01-05 |
JP4095074B2 (ja) | 2008-06-04 |
JP2006019697A (ja) | 2006-01-19 |
US7772061B2 (en) | 2010-08-10 |
KR100712112B1 (ko) | 2007-04-27 |
CN100552976C (zh) | 2009-10-21 |
KR20060001752A (ko) | 2006-01-06 |
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