CN1855393A - 薄膜晶体管及其制造方法 - Google Patents
薄膜晶体管及其制造方法 Download PDFInfo
- Publication number
- CN1855393A CN1855393A CNA2006100586719A CN200610058671A CN1855393A CN 1855393 A CN1855393 A CN 1855393A CN A2006100586719 A CNA2006100586719 A CN A2006100586719A CN 200610058671 A CN200610058671 A CN 200610058671A CN 1855393 A CN1855393 A CN 1855393A
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- drain region
- dopant
- source region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000002019 doping agent Substances 0.000 claims abstract description 30
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 35
- 239000012212 insulator Substances 0.000 claims description 27
- 238000005516 engineering process Methods 0.000 claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000013081 microcrystal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0644—One-way valve
- F16K31/0655—Lift valves
- F16K31/0665—Lift valves with valve member being at least partially ball-shaped
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/02—Construction of housing; Use of materials therefor of lift valves
- F16K27/0245—Construction of housing; Use of materials therefor of lift valves with ball-shaped valve members
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/02—Construction of housing; Use of materials therefor of lift valves
- F16K27/029—Electromagnetically actuated valves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050035785A KR100645718B1 (ko) | 2005-04-28 | 2005-04-28 | 박막 트랜지스터 및 그 제조방법 |
KR1020050035785 | 2005-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1855393A true CN1855393A (zh) | 2006-11-01 |
CN100511607C CN100511607C (zh) | 2009-07-08 |
Family
ID=37195442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100586719A Expired - Fee Related CN100511607C (zh) | 2005-04-28 | 2006-03-08 | 薄膜晶体管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7476896B2 (zh) |
JP (1) | JP2006310738A (zh) |
KR (1) | KR100645718B1 (zh) |
CN (1) | CN100511607C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101378082B (zh) * | 2007-08-31 | 2012-10-10 | 株式会社半导体能源研究所 | 显示装置以及显示装置的制造方法 |
CN101369604B (zh) * | 2007-08-17 | 2012-12-05 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
WO2013007066A1 (zh) * | 2011-07-14 | 2013-01-17 | 深圳市华星光电技术有限公司 | 薄膜晶体管的制造方法以及薄膜晶体管 |
CN105070686A (zh) * | 2015-08-20 | 2015-11-18 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及tft基板结构 |
WO2016106897A1 (zh) * | 2014-12-30 | 2016-07-07 | 深圳市华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8101444B2 (en) * | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20090090915A1 (en) | 2007-10-05 | 2009-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor, and method for manufacturing the same |
US8703365B2 (en) | 2012-03-06 | 2014-04-22 | Apple Inc. | UV mask with anti-reflection coating and UV absorption material |
US8823003B2 (en) | 2012-08-10 | 2014-09-02 | Apple Inc. | Gate insulator loss free etch-stop oxide thin film transistor |
US9601557B2 (en) | 2012-11-16 | 2017-03-21 | Apple Inc. | Flexible display |
US9600112B2 (en) | 2014-10-10 | 2017-03-21 | Apple Inc. | Signal trace patterns for flexible substrates |
CN104576756B (zh) * | 2014-12-30 | 2019-03-12 | 深圳市华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
KR20180075733A (ko) | 2016-12-26 | 2018-07-05 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4670763A (en) | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
US5241197A (en) * | 1989-01-25 | 1993-08-31 | Hitachi, Ltd. | Transistor provided with strained germanium layer |
JP2781706B2 (ja) | 1991-09-25 | 1998-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6413805B1 (en) * | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
CN1134600A (zh) | 1995-01-13 | 1996-10-30 | 株式会社半导体能源研究所 | 制造薄膜晶体管的方法及设备 |
JP3440291B2 (ja) | 1995-05-25 | 2003-08-25 | 独立行政法人産業技術総合研究所 | 微結晶シリコン薄膜トランジスタ |
JPH10326837A (ja) * | 1997-03-25 | 1998-12-08 | Toshiba Corp | 半導体集積回路装置の製造方法、半導体集積回路装置、半導体装置、及び、半導体装置の製造方法 |
US6696309B2 (en) * | 1998-09-25 | 2004-02-24 | Hideo Yamanaka | Methods for making electrooptical device and driving substrate therefor |
KR20020002655A (ko) | 2000-06-30 | 2002-01-10 | 주식회사 현대 디스플레이 테크놀로지 | 박막 트랜지스터 액정표시 소자의 제조방법 |
GB0017471D0 (en) | 2000-07-18 | 2000-08-30 | Koninkl Philips Electronics Nv | Thin film transistors and their manufacture |
KR100387122B1 (ko) * | 2000-09-15 | 2003-06-12 | 피티플러스(주) | 백 바이어스 효과를 갖는 다결정 실리콘 박막 트랜지스터의 제조 방법 |
CN1195321C (zh) | 2000-10-24 | 2005-03-30 | 友达光电股份有限公司 | 薄膜晶体管平面显示器 |
JP2002184710A (ja) * | 2000-12-18 | 2002-06-28 | Sony Corp | 半導体層のドーピング方法、薄膜半導体素子の製造方法、及び薄膜半導体素子 |
JP2001210836A (ja) | 2000-12-20 | 2001-08-03 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタの作製方法 |
US6747838B2 (en) * | 2001-02-15 | 2004-06-08 | Seagate Technology Llc | Thermal performance of an integrated amplifier in a disc drive |
US6835954B2 (en) * | 2001-12-29 | 2004-12-28 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device |
TW554538B (en) * | 2002-05-29 | 2003-09-21 | Toppoly Optoelectronics Corp | TFT planar display panel structure and process for producing same |
JP2005011915A (ja) * | 2003-06-18 | 2005-01-13 | Hitachi Ltd | 半導体装置、半導体回路モジュールおよびその製造方法 |
TWI222225B (en) * | 2003-07-24 | 2004-10-11 | Au Optronics Corp | Manufacturing method of low-temperature polysilicon thin-film transistor |
KR20050070240A (ko) | 2003-12-30 | 2005-07-07 | 엘지.필립스 엘시디 주식회사 | 다결정 실리콘 박막 트랜지스터 및 그 제조 방법 |
-
2005
- 2005-04-28 KR KR1020050035785A patent/KR100645718B1/ko not_active IP Right Cessation
- 2005-10-11 JP JP2005296698A patent/JP2006310738A/ja active Pending
-
2006
- 2006-02-23 US US11/361,727 patent/US7476896B2/en active Active
- 2006-03-08 CN CNB2006100586719A patent/CN100511607C/zh not_active Expired - Fee Related
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101369604B (zh) * | 2007-08-17 | 2012-12-05 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
US8395158B2 (en) | 2007-08-17 | 2013-03-12 | Semiconductor Energy Labortory Co., Ltd. | Thin film transistor having microcrystalline semiconductor layer |
TWI487031B (zh) * | 2007-08-17 | 2015-06-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
CN101378082B (zh) * | 2007-08-31 | 2012-10-10 | 株式会社半导体能源研究所 | 显示装置以及显示装置的制造方法 |
CN102790075A (zh) * | 2007-08-31 | 2012-11-21 | 株式会社半导体能源研究所 | 显示装置以及显示装置的制造方法 |
CN102790075B (zh) * | 2007-08-31 | 2015-02-25 | 株式会社半导体能源研究所 | 显示装置以及显示装置的制造方法 |
WO2013007066A1 (zh) * | 2011-07-14 | 2013-01-17 | 深圳市华星光电技术有限公司 | 薄膜晶体管的制造方法以及薄膜晶体管 |
US8629507B2 (en) | 2011-07-14 | 2014-01-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor |
US8829523B2 (en) | 2011-07-14 | 2014-09-09 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor manufacturing method |
WO2016106897A1 (zh) * | 2014-12-30 | 2016-07-07 | 深圳市华星光电技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
CN105070686A (zh) * | 2015-08-20 | 2015-11-18 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及tft基板结构 |
CN105070686B (zh) * | 2015-08-20 | 2018-03-30 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及tft基板结构 |
Also Published As
Publication number | Publication date |
---|---|
JP2006310738A (ja) | 2006-11-09 |
CN100511607C (zh) | 2009-07-08 |
KR100645718B1 (ko) | 2006-11-14 |
US7476896B2 (en) | 2009-01-13 |
US20060246639A1 (en) | 2006-11-02 |
KR20060113010A (ko) | 2006-11-02 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090206 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090206 |
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GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121105 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121105 Address after: South Korea Gyeonggi Do Yongin Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090708 Termination date: 20200308 |
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CF01 | Termination of patent right due to non-payment of annual fee |