CN1841781A - 薄膜晶体管、平板显示装置及其制备方法 - Google Patents
薄膜晶体管、平板显示装置及其制备方法 Download PDFInfo
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- CN1841781A CN1841781A CNA2006100738158A CN200610073815A CN1841781A CN 1841781 A CN1841781 A CN 1841781A CN A2006100738158 A CNA2006100738158 A CN A2006100738158A CN 200610073815 A CN200610073815 A CN 200610073815A CN 1841781 A CN1841781 A CN 1841781A
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- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000010410 layer Substances 0.000 claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 9
- 239000012044 organic layer Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 27
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 26
- 238000002360 preparation method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050026688A KR100731738B1 (ko) | 2005-03-30 | 2005-03-30 | 박막트랜지스터, 평판표시장치 및 그 제조방법 |
KR26688/05 | 2005-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841781A true CN1841781A (zh) | 2006-10-04 |
CN100552977C CN100552977C (zh) | 2009-10-21 |
Family
ID=37030693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100738158A Active CN100552977C (zh) | 2005-03-30 | 2006-03-30 | 薄膜晶体管、平板显示装置及其制备方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7521717B2 (zh) |
JP (1) | JP2006287220A (zh) |
KR (1) | KR100731738B1 (zh) |
CN (1) | CN100552977C (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376721A (zh) * | 2010-08-11 | 2012-03-14 | 三星电子株式会社 | 薄膜晶体管阵列基板及其制造方法 |
WO2015180376A1 (zh) * | 2014-05-26 | 2015-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN106898622A (zh) * | 2017-01-25 | 2017-06-27 | 友达光电股份有限公司 | 像素结构 |
CN107895726A (zh) * | 2017-11-30 | 2018-04-10 | 武汉天马微电子有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN108054172A (zh) * | 2017-11-30 | 2018-05-18 | 武汉天马微电子有限公司 | 阵列基板及其制作方法和显示装置 |
WO2019010920A1 (en) * | 2017-07-14 | 2019-01-17 | Boe Technology Group Co., Ltd. | THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, MATRIX SUBSTRATE, AND DISPLAY DEVICE |
CN109870860A (zh) * | 2017-12-05 | 2019-06-11 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN111048524A (zh) * | 2019-11-26 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及制备方法、显示面板 |
CN111540780A (zh) * | 2020-04-23 | 2020-08-14 | 昆山国显光电有限公司 | 薄膜晶体管、显示面板和显示装置 |
CN112786707A (zh) * | 2021-01-28 | 2021-05-11 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管及制备方法、阵列基板、显示面板、显示设备 |
WO2024021178A1 (zh) * | 2022-07-29 | 2024-02-01 | 广州华星光电半导体显示技术有限公司 | 一种阵列基板及显示面板 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100731738B1 (ko) * | 2005-03-30 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 평판표시장치 및 그 제조방법 |
US7463399B2 (en) * | 2005-09-28 | 2008-12-09 | Samsung Sdi Co., Ltd. | Flat panel display and a method of driving the same |
JP4961819B2 (ja) * | 2006-04-26 | 2012-06-27 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
KR101172140B1 (ko) | 2009-12-16 | 2012-08-07 | 주식회사 니프코코리아 | 차량용 암레스트 힌지 |
JP6061536B2 (ja) * | 2012-07-30 | 2017-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2019187070A1 (ja) * | 2018-03-30 | 2019-10-03 | シャープ株式会社 | トランジスタおよび表示装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3456177A (en) * | 1967-05-29 | 1969-07-15 | Web Press Eng Inc | Operational amplifier and regenerative motor control incorporating an operational amplifier |
JPH0799322A (ja) * | 1993-06-24 | 1995-04-11 | Mitsubishi Electric Corp | 薄膜トランジスタを有する半導体装置およびその製造方法 |
JP3403807B2 (ja) * | 1994-06-02 | 2003-05-06 | 松下電器産業株式会社 | 薄膜トランジスタおよび液晶表示装置 |
JPH11177102A (ja) * | 1997-12-08 | 1999-07-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR100554763B1 (ko) * | 2001-01-29 | 2006-02-22 | 세이코 엡슨 가부시키가이샤 | 반도체 장치, 회로 기판, 전기 광학 장치 및 전자기기 |
KR100491141B1 (ko) * | 2001-03-02 | 2005-05-24 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법과 이를 이용한 액티브매트릭스형 표시소자 및 그의 제조방법 |
CN1768437A (zh) * | 2003-03-31 | 2006-05-03 | 佳能株式会社 | 有机薄膜晶体管及其制作方法 |
JP2004320006A (ja) * | 2003-03-31 | 2004-11-11 | Canon Inc | 有機薄膜トランジスタおよびその製造方法 |
JP4221314B2 (ja) | 2004-02-10 | 2009-02-12 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタとそれを用いた液晶表示装置およびその薄膜トランジスタの製造方法 |
JP4299717B2 (ja) * | 2004-04-14 | 2009-07-22 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタとその製造方法 |
JP2005317851A (ja) * | 2004-04-30 | 2005-11-10 | Toshiba Matsushita Display Technology Co Ltd | 薄膜トランジスタおよびその製造方法 |
KR100731738B1 (ko) * | 2005-03-30 | 2007-06-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 평판표시장치 및 그 제조방법 |
JP4961819B2 (ja) * | 2006-04-26 | 2012-06-27 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
-
2005
- 2005-03-30 KR KR1020050026688A patent/KR100731738B1/ko active IP Right Grant
-
2006
- 2006-03-28 JP JP2006088188A patent/JP2006287220A/ja active Pending
- 2006-03-29 US US11/394,063 patent/US7521717B2/en active Active
- 2006-03-30 CN CNB2006100738158A patent/CN100552977C/zh active Active
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376721A (zh) * | 2010-08-11 | 2012-03-14 | 三星电子株式会社 | 薄膜晶体管阵列基板及其制造方法 |
US8994023B2 (en) | 2010-08-11 | 2015-03-31 | Samsung Display Co., Ltd. | Thin film transistor array substrate and method of fabricating the same |
CN102376721B (zh) * | 2010-08-11 | 2016-08-10 | 三星显示有限公司 | 薄膜晶体管阵列基板及其制造方法 |
WO2015180376A1 (zh) * | 2014-05-26 | 2015-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN106898622A (zh) * | 2017-01-25 | 2017-06-27 | 友达光电股份有限公司 | 像素结构 |
CN106898622B (zh) * | 2017-01-25 | 2019-08-30 | 友达光电股份有限公司 | 像素结构 |
CN109256418A (zh) * | 2017-07-14 | 2019-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
WO2019010920A1 (en) * | 2017-07-14 | 2019-01-17 | Boe Technology Group Co., Ltd. | THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, MATRIX SUBSTRATE, AND DISPLAY DEVICE |
US11075304B1 (en) | 2017-07-14 | 2021-07-27 | Boe Technology Group Co., Ltd. | Thin-film transistor and fabrication method thereof, array substrate and display device |
CN108054172A (zh) * | 2017-11-30 | 2018-05-18 | 武汉天马微电子有限公司 | 阵列基板及其制作方法和显示装置 |
CN107895726A (zh) * | 2017-11-30 | 2018-04-10 | 武汉天马微电子有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN109870860A (zh) * | 2017-12-05 | 2019-06-11 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN109870860B (zh) * | 2017-12-05 | 2021-10-26 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN111048524A (zh) * | 2019-11-26 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及制备方法、显示面板 |
CN111540780A (zh) * | 2020-04-23 | 2020-08-14 | 昆山国显光电有限公司 | 薄膜晶体管、显示面板和显示装置 |
CN111540780B (zh) * | 2020-04-23 | 2022-10-18 | 昆山国显光电有限公司 | 薄膜晶体管、显示面板和显示装置 |
CN112786707A (zh) * | 2021-01-28 | 2021-05-11 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管及制备方法、阵列基板、显示面板、显示设备 |
WO2024021178A1 (zh) * | 2022-07-29 | 2024-02-01 | 广州华星光电半导体显示技术有限公司 | 一种阵列基板及显示面板 |
Also Published As
Publication number | Publication date |
---|---|
CN100552977C (zh) | 2009-10-21 |
US20060220020A1 (en) | 2006-10-05 |
KR100731738B1 (ko) | 2007-06-22 |
US7521717B2 (en) | 2009-04-21 |
KR20060104477A (ko) | 2006-10-09 |
JP2006287220A (ja) | 2006-10-19 |
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