KR970003688A - 반도체 소자의 트랜지스터 제조방법 - Google Patents

반도체 소자의 트랜지스터 제조방법 Download PDF

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Publication number
KR970003688A
KR970003688A KR1019950016404A KR19950016404A KR970003688A KR 970003688 A KR970003688 A KR 970003688A KR 1019950016404 A KR1019950016404 A KR 1019950016404A KR 19950016404 A KR19950016404 A KR 19950016404A KR 970003688 A KR970003688 A KR 970003688A
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South Korea
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layer
photoresist film
forming
polysilicon
region
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KR1019950016404A
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English (en)
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KR0150105B1 (ko
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황준
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김주용
현대전자산업 주식회사
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Priority to KR1019950016404A priority Critical patent/KR0150105B1/ko
Priority to TW085106812A priority patent/TW302517B/zh
Priority to JP8152111A priority patent/JP2951893B2/ja
Priority to US08/665,513 priority patent/US5700700A/en
Priority to CN96108209A priority patent/CN1050700C/zh
Publication of KR970003688A publication Critical patent/KR970003688A/ko
Application granted granted Critical
Publication of KR0150105B1 publication Critical patent/KR0150105B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 트랜지스터 제조방법에 관한 것으로, 접합영역의 자체저항을 감소시키기 위하여 SOI(Silicon OnInsulator)층의 접합영역 상부에 폴리실리콘층을 형성하고 불순물이온을 주입하여 접합영역을 채널 및 LDD영역보다 두껍게 형성시키므로써 동작속도를 향상시킬 수 있도록 한 반도체 소자의 트랜지스터 제조방법에 관한 것이다.

Description

반도체 소자의 트랜지스터 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A 내지 제2E도는 본 발명에 따른 반도체 소자의 트랜지스터 제조방법을 설명하기 위한 소자의 단면도.

Claims (4)

  1. 반도체 소자의 트랜지스터 제조방법에 있어서, 실리콘층, 절연층 및 SOI층이 적층 구조로 형성된 SOI 웨이퍼의 필드영역에 필드산화막을 형성하는 단계와, 상기 단계로부터 전체 상부면에 제1 폴리실리콘층 및 제1 감광막을 순차적으로 형성하고, 상기 제1 감광막을 패터닝하여 접합영역이 형성될 부분에 상기 제1 감광막을 잔류시키는 단계와, 상기 단계로부터 상기 패터닝된 제1 감광막을 마스크로 이용하여 노출된 부분의 상기 제1 폴리실리콘층을 식각한 후 잔류된 상기 제1 감광막을 제거하는 단계와, 상기 단계로부터 전체 상부면에 게이트산화막, 제2 폴리실리콘층 및 제2 감광막을 순차적으로 형성하고, 게이트전극용 마스크를 이용하여 상기 제2 감광막을 패터닝하는 단계와, 상기 단계로부터 상기 패터닝된 제2 감광막을 마스크로 이용한 식각공정으로 상기 제2 폴리실리콘 및 게이트산화막을 순차적으로 식각하여 채널영역의 상기 SOI층 상부에 게이트전극을 형성시키고, 상기 제2 감광막을 제거하는 단계와, 상기 단계로부터 저농도 불순물이온을 주입하여 상기 게이트전극 양측부의 노출된 SOI층에 LDD영역을 형성하는 단계와, 상기 단계로부터 전체 상부면에 산화막을 형성하고 블랜켓 식각하여 상기 게이트전극의 양측벽 및 상기 LDD영역의 상부에 산화막 스페이서를 형성시키는 단계와, 상기 단계로부터 노출된 상기 제1 폴리실리콘 및 상기 제1 폴리실리콘 하부의 SOI층에 고농도 불순물이온을 주입하여 접합영역을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.
  2. 제1항에 있어서, 상기 절연층은 산화막인 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.
  3. 제1항에 있어서, 상기 제1 폴리실리콘층은 3000 내지 4000Å의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.
  4. 제1항에 있어서, 상기 제1 감광막은 일측부가 상기 필드산화막의 일부를 포함하도록 패터닝되는 것을 특징으로 하는 반도체 소자의 트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950016404A 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법 KR0150105B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019950016404A KR0150105B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법
TW085106812A TW302517B (ko) 1995-06-20 1996-06-06
JP8152111A JP2951893B2 (ja) 1995-06-20 1996-06-13 半導体素子のトランジスター製造方法
US08/665,513 US5700700A (en) 1995-06-20 1996-06-18 Transistor in a semiconductor device and method of making the same
CN96108209A CN1050700C (zh) 1995-06-20 1996-06-19 半导体器件中的晶体管及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016404A KR0150105B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
KR970003688A true KR970003688A (ko) 1997-01-28
KR0150105B1 KR0150105B1 (ko) 1998-12-01

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Country Status (5)

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US (1) US5700700A (ko)
JP (1) JP2951893B2 (ko)
KR (1) KR0150105B1 (ko)
CN (1) CN1050700C (ko)
TW (1) TW302517B (ko)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
JP3296975B2 (ja) * 1996-08-22 2002-07-02 シャープ株式会社 薄膜トランジスタ及びその製造方法
TR200000624T2 (tr) * 1997-09-08 2000-11-21 Unilever N.V. Bir enzimin etkinliğinin arttırılması ile ilgili bir yöntem.
US6162688A (en) * 1999-01-14 2000-12-19 Advanced Micro Devices, Inc. Method of fabricating a transistor with a dielectric underlayer and device incorporating same
JP2004079790A (ja) * 2002-08-19 2004-03-11 Oki Electric Ind Co Ltd 完全空乏型ｓｏｉ−ｍｏｓトランジスタおよびその製造方法
US7022575B2 (en) * 2003-10-29 2006-04-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device
JP2006173538A (ja) * 2004-12-20 2006-06-29 Oki Electric Ind Co Ltd 半導体装置
CN101183666B (zh) * 2007-12-13 2011-07-20 上海宏力半导体制造有限公司 一种用于嵌入式闪存自对准源漏极的侧墙制造方法
US20150093650A1 (en) 2012-04-26 2015-04-02 Lenzing Aktiengesellschaft Battery separator
JP2016511511A (ja) 2013-02-22 2016-04-14 レンツィング アクチェンゲゼルシャフト 電池セパレータ
CN105931968B (zh) * 2016-05-27 2018-12-18 上海集成电路研发中心有限公司 一种全耗尽绝缘层硅晶体管的形成方法
KR20230036552A (ko) 2020-07-29 2023-03-14 렌징 악티엔게젤샤프트 리오셀 섬유의 용도

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805546A (en) * 1986-01-21 1989-02-21 Kransco Manufacturing, Inc. Retractable water board fin
US5198379A (en) * 1990-04-27 1993-03-30 Sharp Kabushiki Kaisha Method of making a MOS thin film transistor with self-aligned asymmetrical structure
JP3186056B2 (ja) * 1990-09-12 2001-07-11 セイコーエプソン株式会社 半導体装置の製造方法
JP2660451B2 (ja) * 1990-11-19 1997-10-08 三菱電機株式会社 半導体装置およびその製造方法
US5405795A (en) * 1994-06-29 1995-04-11 International Business Machines Corporation Method of forming a SOI transistor having a self-aligned body contact
US5525552A (en) * 1995-06-08 1996-06-11 Taiwan Semiconductor Manufacturing Company Method for fabricating a MOSFET device with a buried contact

Also Published As

Publication number Publication date
CN1050700C (zh) 2000-03-22
JPH098321A (ja) 1997-01-10
JP2951893B2 (ja) 1999-09-20
CN1148272A (zh) 1997-04-23
KR0150105B1 (ko) 1998-12-01
TW302517B (ko) 1997-04-11
US5700700A (en) 1997-12-23

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