KR920020755A - 박막전계효과소자(薄膜電界效果素子) 및 그의 제조방법 - Google Patents

박막전계효과소자(薄膜電界效果素子) 및 그의 제조방법 Download PDF

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KR920020755A
KR920020755A KR1019920005761A KR920005761A KR920020755A KR 920020755 A KR920020755 A KR 920020755A KR 1019920005761 A KR1019920005761 A KR 1019920005761A KR 920005761 A KR920005761 A KR 920005761A KR 920020755 A KR920020755 A KR 920020755A
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layer
sidewall
forming
electric
conductor layer
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KR1019920005761A
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KR950003941B1 (ko
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모또 도다
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시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

박막전계효과소자(薄膜電界效果素子) 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 제1실시예에 의한 박막트랜지스터의 단면 구조도.
제2도는 제1도에 표시하는 박막 트랜지스터의 제조공정의 제1공정을 표시하는 단면구조도.
제3도는 제1도에 표시하는 박막 트랜지스터의 제조공정의 제2공정을 표시하는 단면구조도.

Claims (2)

  1. 절연성이 있는 기층상에 형성된 게이트전극과, 전기 게이트전극의 상부표면 및 측부표면을 덮은 절연층과 전기 절연층의 표면상에 형성된 다결정 실리콘층과, 전기다결정 실리콘층 중에 형성된 채널영역과 전기다결정 실리콘층중에 형성되어 전기 채널영역에 인접하는 저농도 불순물 영역과 이 저농도 불순물영역에 인접하는 고농도 불순물 영역으로 된 한쌍의 소스. 드레인 영역을 설비한 박막 전계효과 소자.
  2. 기층상에 그 상부 표면 및 측부표면이 절연층에 덮인 게이트전극을 형성하는 공정과, 상대적인 저농도의 불순물을 포함한 제1도체층을 전기 기층상의 전면에 형성한후, 이방성 에칭을 함으로서 전기 게이트전극의 측벽에 형성된 전기 절연층의 측벽에 제1측벽 도체층을 형성하는 공정과, 상대적인 고농도의 불순물을 포함한 제2도체층을 전기 기층상의 전면에 형성한후, 이방성 에칭을 함으로서 전기 제1측벽 도체층의 측벽에 제2의 측벽 도체층을 형성하는 공정과, 전기 제1측벽 도체층 전기 절연측 및 전기기 층에 대해서 큰 선택비가 있는 에칭법을 사용해서 전기 제2측벽 도체층을 에칭하고, 전기 제1측벽도체층의 표면을 노출시키는 공정과, 전기 제1, 제2 측벽도체층 및 전기 절연층의 표면상에 다결정 실리콘층을 형성하는 공정과, 열처리를 하고 전기 제1 및 제2측벽 도체층 중에 포함되는 불순물을 전기 다결정 실리콘층 중에 확산시킴으로서 저농도와 고농도의 불순물 영역으로된 소스. 드레인 영역을 형성하는 공정과를 마련한 박막 전계효과 소자의 제조방법.
    * 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920005761A 1991-04-23 1992-04-07 박막전계효과소자(薄膜電界效果素子) 및 그의 제조방법 KR950003941B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3091819A JPH04322469A (ja) 1991-04-23 1991-04-23 薄膜電界効果素子およびその製造方法
JP91-091819 1991-04-23

Publications (2)

Publication Number Publication Date
KR920020755A true KR920020755A (ko) 1992-11-21
KR950003941B1 KR950003941B1 (ko) 1995-04-21

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KR1019920005761A KR950003941B1 (ko) 1991-04-23 1992-04-07 박막전계효과소자(薄膜電界效果素子) 및 그의 제조방법

Country Status (5)

Country Link
US (1) US5262655A (ko)
EP (1) EP0510380B1 (ko)
JP (1) JPH04322469A (ko)
KR (1) KR950003941B1 (ko)
DE (1) DE69211218T2 (ko)

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Also Published As

Publication number Publication date
EP0510380A3 (en) 1993-02-24
DE69211218T2 (de) 1996-11-07
US5262655A (en) 1993-11-16
JPH04322469A (ja) 1992-11-12
EP0510380B1 (en) 1996-06-05
DE69211218D1 (de) 1996-07-11
KR950003941B1 (ko) 1995-04-21
EP0510380A2 (en) 1992-10-28

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