KR920008967A - 반도체장치 - Google Patents

반도체장치 Download PDF

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KR920008967A
KR920008967A KR1019910018251A KR910018251A KR920008967A KR 920008967 A KR920008967 A KR 920008967A KR 1019910018251 A KR1019910018251 A KR 1019910018251A KR 910018251 A KR910018251 A KR 910018251A KR 920008967 A KR920008967 A KR 920008967A
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diffusion layer
impurity diffusion
impurity
semiconductor substrate
region
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KR1019910018251A
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KR950009795B1 (ko
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고지 시라이
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아오이 죠이치
가부시키가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 제1실시예에 관한 횡형 P채널 MOS트랜지스터의 평면 형태를 나타낸 도면.

Claims (4)

  1. 횡형 MOSFET이 형성된 반도체장치에 있어서, 상기 횡형 MOSFET은, 제1도전형 반도체기판(10)의 표면일부에 형성된 제2도전형의 트레인영역용의 제1불순물확산층 (11)과 이 제1불순물확산층(11)의 영역내부에 존재하고, 이 제1불순물확산층 보다도 기판표면에서 접합면까지의 깊이방향의 거리가 얕게 형성되며, 이 제1불순물확산층보다 높은 불순물농도를 갖춘 제2도전형의 드레인전극취출용의 제2불순물확산층(12), 상기 제1불순물확산층(11)의 외주의 일부에 접속되고, 상기 제1불순물확산층(11) 및 제2불순물확산층(12)을 취위하듯이 상기 반도체기판의 표면일부에 형성되며, 상기 반도체기판보다 높은 불순물농도를 갖춘 제1도전형의 백게이트영역용의 저3불순물확산층(13,13'), 이 제3불순물확산층(13,13')이 상기 제1불순물확산층 (11)에 접하는 영역내부에 존재하고, 이 제3불순물확산층(13,13')보다도 기판표면에서 접합면까지의 깊이방향의 거리가 얕게 형성되며, 상기 제1불순물확산층(11)보다 높은 불순물농도를 갖춘 제2도전형의 소오스영역용의 제4불순물확산층(14), 제4불순물확산층(14)과 상기 제불순물확산층(11)과의 사이의 상기 제3불순물확산층(13,13')의 표면의 채널 영역(CH)상에 게이트절연막(15)을 매개해서 형성된 게이트전극(G), 상기 제2불순물확산층(12)에 접촉해서 형성된 드레인전극(D) 및, 상기 제3불순물확산층(13, 13') 및 제4불순물확산층(14)에 공통으로 접촉해서 형성된 소오스·백게이트공통전극(S·B)으로 구성된 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 반도체기판은 실리콘단결정 기판이고, 상기 게이트절연막(15)은 이산화실리콘막인 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기 제1도전형의 반도체기판은, 제2도전형의 반도체기판 (30,40)상에서, 제1도전형의 반도체기판보다 높은 불순물농도를 갖춘 제 1도전형의 반도체 영역(31,32 : 41)에 의해 에워싸여 있는 것을 특징으로 하는 반도체장치.
  4. 제3항에 있어서, 상기 제2도전형의 반도체기판상에 제1항의 소자와는 별개의 소자가 형성되어 있는 것을 특징으로 하는 집적회로화된 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018251A 1990-10-17 1991-10-17 횡형 모스에프이티(MOSFET)와 이 횡형 모스에프이티(MOSFET)를 이용한 고브레이크다운전압 바이씨모스(Bi-CMOS) 트랜지스터장치 KR950009795B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-280202 1990-10-17
JP2280202A JP2609753B2 (ja) 1990-10-17 1990-10-17 半導体装置

Publications (2)

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KR920008967A true KR920008967A (ko) 1992-05-28
KR950009795B1 KR950009795B1 (ko) 1995-08-28

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KR1019910018251A KR950009795B1 (ko) 1990-10-17 1991-10-17 횡형 모스에프이티(MOSFET)와 이 횡형 모스에프이티(MOSFET)를 이용한 고브레이크다운전압 바이씨모스(Bi-CMOS) 트랜지스터장치

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Country Link
US (1) US5306938A (ko)
EP (1) EP0481454B1 (ko)
JP (1) JP2609753B2 (ko)
KR (1) KR950009795B1 (ko)
DE (1) DE69128406T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115985A (ja) * 1994-10-17 1996-05-07 Nec Corp 低雑音の半導体集積回路
US5565367A (en) * 1995-03-24 1996-10-15 Hualon Micro Electronic Corporation Protective device for an integrated circit and manufacturing method thereof
JP2001110810A (ja) * 1999-10-06 2001-04-20 Fujitsu Ltd 半導体装置及びその製造方法
JP3831602B2 (ja) 2000-12-07 2006-10-11 三洋電機株式会社 半導体装置の製造方法
US6969909B2 (en) * 2002-12-20 2005-11-29 Vlt, Inc. Flip chip FET device
US7038917B2 (en) * 2002-12-27 2006-05-02 Vlt, Inc. Low loss, high density array interconnection
US7592683B2 (en) * 2004-03-26 2009-09-22 Sanken Electric Co., Ltd. Semiconductor device with improved electrostatic tolerance
JP5180468B2 (ja) * 2006-12-21 2013-04-10 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
IT1392673B1 (it) 2009-01-13 2012-03-16 Saipem Spa Procedimento per l'ottenimento di 1-butene ad elevata purezza da miscele idrocarburiche c4
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
US9660053B2 (en) * 2013-07-12 2017-05-23 Power Integrations, Inc. High-voltage field-effect transistor having multiple implanted layers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
JPH01179342A (ja) * 1988-01-05 1989-07-17 Toshiba Corp 複合半導体結晶体
DE68918783T2 (de) * 1988-08-18 1995-03-30 Seiko Epson Corp MIS-Bauelement.
EP0371785B1 (en) * 1988-11-29 1996-05-01 Kabushiki Kaisha Toshiba Lateral conductivity modulated MOSFET
JP2509690B2 (ja) * 1989-02-20 1996-06-26 株式会社東芝 半導体装置
JPH02237159A (ja) * 1989-03-10 1990-09-19 Toshiba Corp 半導体装置
US5146298A (en) * 1991-08-16 1992-09-08 Eklund Klas H Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor

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Publication number Publication date
JPH04154173A (ja) 1992-05-27
EP0481454A2 (en) 1992-04-22
US5306938A (en) 1994-04-26
EP0481454A3 (en) 1992-10-21
DE69128406D1 (de) 1998-01-22
DE69128406T2 (de) 1998-04-30
KR950009795B1 (ko) 1995-08-28
JP2609753B2 (ja) 1997-05-14
EP0481454B1 (en) 1997-12-10

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