DE68918783T2 - MIS-Bauelement. - Google Patents
MIS-Bauelement.Info
- Publication number
- DE68918783T2 DE68918783T2 DE68918783T DE68918783T DE68918783T2 DE 68918783 T2 DE68918783 T2 DE 68918783T2 DE 68918783 T DE68918783 T DE 68918783T DE 68918783 T DE68918783 T DE 68918783T DE 68918783 T2 DE68918783 T2 DE 68918783T2
- Authority
- DE
- Germany
- Prior art keywords
- mis device
- mis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20552988 | 1988-08-18 | ||
JP20553188 | 1988-08-18 | ||
JP20553088 | 1988-08-18 | ||
JP1125854A JPH02138775A (ja) | 1988-08-18 | 1989-05-19 | Mis型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918783D1 DE68918783D1 (de) | 1994-11-17 |
DE68918783T2 true DE68918783T2 (de) | 1995-03-30 |
Family
ID=27471149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918783T Expired - Fee Related DE68918783T2 (de) | 1988-08-18 | 1989-08-08 | MIS-Bauelement. |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0356062B1 (de) |
DE (1) | DE68918783T2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2609753B2 (ja) * | 1990-10-17 | 1997-05-14 | 株式会社東芝 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103356A (en) * | 1980-12-19 | 1982-06-26 | Hitachi Ltd | Mos semiconductor device |
JPS5834958A (ja) * | 1981-08-26 | 1983-03-01 | Nec Corp | 入力保護装置 |
JPS60117674A (ja) * | 1983-11-29 | 1985-06-25 | Fujitsu Ltd | 高耐圧半導体装置 |
DE3408285A1 (de) * | 1984-03-07 | 1985-09-19 | Telefunken electronic GmbH, 7100 Heilbronn | Schutzanordnung fuer einen feldeffekttransistor |
JPS6187374A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 高電圧集積回路 |
EP0267768A1 (de) * | 1986-11-10 | 1988-05-18 | SILICONIX Incorporated | Drifted-Drain-MOS-Transistor für hohe Spannungen |
-
1989
- 1989-08-08 DE DE68918783T patent/DE68918783T2/de not_active Expired - Fee Related
- 1989-08-08 EP EP89308036A patent/EP0356062B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0356062A2 (de) | 1990-02-28 |
DE68918783D1 (de) | 1994-11-17 |
EP0356062B1 (de) | 1994-10-12 |
EP0356062A3 (en) | 1990-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |