KR920001749A - 개량된 절연게이트형 트랜지스터를 갖는 반도체장치 - Google Patents

개량된 절연게이트형 트랜지스터를 갖는 반도체장치 Download PDF

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Publication number
KR920001749A
KR920001749A KR1019910008738A KR910008738A KR920001749A KR 920001749 A KR920001749 A KR 920001749A KR 1019910008738 A KR1019910008738 A KR 1019910008738A KR 910008738 A KR910008738 A KR 910008738A KR 920001749 A KR920001749 A KR 920001749A
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KR
South Korea
Prior art keywords
semiconductor device
gate electrode
electrode region
source
semiconductor
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KR1019910008738A
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English (en)
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KR950006482B1 (ko
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시게유끼 마쯔모도
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야마지 게이조오
캐논 가부시끼가이샤
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Publication of KR920001749A publication Critical patent/KR920001749A/ko
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Publication of KR950006482B1 publication Critical patent/KR950006482B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

개량된 절연게이트형 트랜지스터를 갖는 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 적합한 실시예를 설명하는 단면도
제5도는 본 발명 실시예의 평면도 및 단면도

Claims (4)

  1. 반도체로 이루어진 소오스 및 드레인영역과, 게이트 절연막과, 게이트 전극영역을 갖는 절연게이트형 트랜지스터를 포함한 반도체 장치에 있어서, 상기 소오스 및 드레인 영역과, 상기 게이트 절연막과, 살기 게이트 전극영역이 반도체 기판주변에 따르는 방향으로 함께 놓여 적어도 그 일부가 그 기판에 매립되어 있는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 트랜지스터의 채널이 상기 기판의 주면과 교차하는 면을 따르는 방향으로 형성되고, 그 주면을 따르는 특징을 캐리어가 이동하는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 게이트전극영역하에 반도체 영역이 형성되어 있고, 그 게이트전극영역을 끼워고 상기 소오스 및 드레인영역이 배치되어 있는것을 특징으로하는 반도체 장치.
  4. 제1항에 있어서, 상기 게이트전극을 구성하는 부재가 저항을 10μΩｍ 이하의 재료인 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910008738A 1990-06-04 1991-05-28 개량된 절연게이트형 트랜지스터를 갖는 반도체장치 KR950006482B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-144544 1990-06-04
JP2144544A JP2790362B2 (ja) 1990-06-04 1990-06-04 半導体装置

Publications (2)

Publication Number Publication Date
KR920001749A true KR920001749A (ko) 1992-01-30
KR950006482B1 KR950006482B1 (ko) 1995-06-15

Family

ID=15364769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910008738A KR950006482B1 (ko) 1990-06-04 1991-05-28 개량된 절연게이트형 트랜지스터를 갖는 반도체장치

Country Status (9)

Country Link
US (1) US5302846A (ko)
EP (1) EP0460918B1 (ko)
JP (1) JP2790362B2 (ko)
KR (1) KR950006482B1 (ko)
CN (1) CN1032173C (ko)
AT (1) ATE127618T1 (ko)
DE (1) DE69112713T2 (ko)
ES (1) ES2076468T3 (ko)
MY (1) MY107193A (ko)

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US5512517A (en) * 1995-04-25 1996-04-30 International Business Machines Corporation Self-aligned gate sidewall spacer in a corrugated FET and method of making same
US5705409A (en) * 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US5929476A (en) * 1996-06-21 1999-07-27 Prall; Kirk Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
DE19720193C2 (de) 1997-05-14 2002-10-17 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens zwei vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
US5886382A (en) * 1997-07-18 1999-03-23 Motorola, Inc. Trench transistor structure comprising at least two vertical transistors
US6500744B2 (en) 1999-09-02 2002-12-31 Micron Technology, Inc. Methods of forming DRAM assemblies, transistor devices, and openings in substrates
CN1220053C (zh) 1999-11-15 2005-09-21 松下电器产业株式会社 生物传感器、定量装置及定量方法
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US9590065B2 (en) 2013-12-04 2017-03-07 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

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JPS5423478A (en) * 1977-07-25 1979-02-22 Toshiba Corp Semiconductor device of field effect type
JPS57192080A (en) * 1981-05-21 1982-11-26 Fujitsu Ltd Semiconductor device
JPS59129472A (ja) * 1983-01-14 1984-07-25 Sanyo Electric Co Ltd Ｍｏｓ型トランジスタ
JPS59228762A (ja) * 1983-06-10 1984-12-22 Hitachi Ltd マルチゲ−トトランジスタ
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JPH01183855A (ja) * 1988-01-18 1989-07-21 Mitsubishi Electric Corp Ｍｏｓ形トランジスタ
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Also Published As

Publication number Publication date
EP0460918A2 (en) 1991-12-11
DE69112713D1 (de) 1995-10-12
KR950006482B1 (ko) 1995-06-15
JPH0438877A (ja) 1992-02-10
JP2790362B2 (ja) 1998-08-27
ES2076468T3 (es) 1995-11-01
EP0460918A3 (en) 1992-05-06
EP0460918B1 (en) 1995-09-06
CN1032173C (zh) 1996-06-26
US5302846A (en) 1994-04-12
MY107193A (en) 1995-09-30
DE69112713T2 (de) 1996-02-22
ATE127618T1 (de) 1995-09-15
CN1057131A (zh) 1991-12-18

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