KR880700468A - 반도체 장치 - Google Patents
반도체 장치Info
- Publication number
- KR880700468A KR880700468A KR870700554A KR870700554A KR880700468A KR 880700468 A KR880700468 A KR 880700468A KR 870700554 A KR870700554 A KR 870700554A KR 870700554 A KR870700554 A KR 870700554A KR 880700468 A KR880700468 A KR 880700468A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- substrate
- separation layers
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 32
- 239000000758 substrate Substances 0.000 claims 9
- 238000000926 separation method Methods 0.000 claims 5
- 230000005669 field effect Effects 0.000 claims 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 2 도는 본 발명의 제 1 의 실시예를 나타낸 단면도.
Claims (10)
- 기판 내부에 절연 게이트 전계효과 트랜지스터의 소오스와 드레인 또는 바이폴라 트랜지스터의 콜렉터, 베이스와 에미터를 가지며 기판 내에 다수의 분리층을 갖는 반도체 장치에 있어서, 상기 소오스와 드레인 또는 상기 콜렉터와 베이스와 에미터 전극의 각각에 인가되는 전압의 가변 범위 밖의 전압이 적어도 하나의 상기 기판과 상기 여러개의 분리층에 인가되는 것을 특징으로 하는 반도체 장치.
- 기판 내부에 절연 게이트 전계효과 트랜지스터의 소오스와 드레인 또는 바이폴라 트랜지스터의 콜렉터와 베이스와 에미터를 가지며, 기판 내에 여러개의 분리층을 갖는 반도체 장치에 있어서, 적어도 2개의 동일하지 않은 전압이 동일한 도전형의 분리층들과 상기 기판에 가해지거나 동일한 도전형의 여러개의 분리층에 인가되는 것을 특징으로 하는 반도체 장치.
- 반도체 본체와 이 본체 내에 형성되는 적어도 하나의 pn접합부를 포함하는 반도체 소자와 이 반도체 소자를 위한 전력 소오스 수단과 상기 본체를 위한 전력 소오스 수단을 갖는 반도체 장치에 있어서, 상기 반도체 소자의 입력으로 예상되는 입력 전압에 대해 극성이 반대인 입력 전압이 상기 반도체 본체에 도달하더라도 상기 본체를 위한 상기 전력 소오스 수단이 상기 pn접합부가 순방향 바이어스 되지 않도록 전압을 공급하는 것을 특징으로 하는 반도체 장치.
- 특허 청구의 범위 제 3 항에 있어서, 상기 반도체 본체가 반도체 기판과 상기 기판상에 형성되는 에피택셜 층으로 되는 것을 특징으로 하는 반도체 장치.
- 특허 청구의 범위 제 3 항에 있어서, 상기 반도체 본체가 절연 기판상에 마련된 하나의 반도체 층인것을 특징으로 하는 반도체 장치.
- 특허 청구의 범위 제 4 항에 있어서, 상기 반도체 소자가 적어도 하나의 MOS 트랜지스터를 포함하는 것을 특징으로 하는 반도체 장치.
- 특허 청구의 범위 제 4 항에 있어서, 상기 반도체 소자가 적어도 하나의 바이폴라 트랜지스터를 포함하는 것을 특징으로 하는 반도체 장치.
- 특허 청구의 범위 제 4 항에 있어서, 상기 반도체 소자가 적어도 하나의 MOS 트랜지스터와 적어도 하나의 바이폴라 트랜지스터를 포함하는 것을 특징으로 하는 반도체 장치.
- 특허 청구의 범위 제 3 항에 있어서, 상기 반도체 소자가 외부 입력이 인가 되는 반도체 소자인 것을 특징으로하는 반도체 장치.
- 특허 청구의 범위 제 3 항에 있어서, 상기 반도체 소자가 반도체 메모리를 형성하며, 순방향 바이어스 되지 않는 상기 pn 접합부를 갖는 상기 반도체 소자는 외부 입력이 인가되는 반도체 소자인것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60258506A JPH0671067B2 (ja) | 1985-11-20 | 1985-11-20 | 半導体装置 |
JP258506 | 1985-11-20 | ||
JP60-258506 | 1985-11-20 | ||
PCT/JP1986/000579 WO1987003423A1 (en) | 1985-11-20 | 1986-11-12 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910701144A Division KR950007575B1 (ko) | 1985-11-20 | 1986-11-12 | 회로를 웰로 분리한 반도체장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880700468A true KR880700468A (ko) | 1988-03-15 |
KR950007573B1 KR950007573B1 (ko) | 1995-07-12 |
Family
ID=17321153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870700554A KR950007573B1 (ko) | 1985-11-20 | 1986-11-12 | 회로를 웰로 분리한 반도체장치 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0245515B1 (ko) |
JP (1) | JPH0671067B2 (ko) |
KR (1) | KR950007573B1 (ko) |
DE (1) | DE3650613T2 (ko) |
HK (1) | HK1003586A1 (ko) |
SG (1) | SG59995A1 (ko) |
WO (1) | WO1987003423A1 (ko) |
Families Citing this family (73)
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US5173294A (en) * | 1986-11-18 | 1992-12-22 | Research Foundation Of State University Of New York | Dna probe for the identification of haemophilus influenzae |
GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
GB8713388D0 (en) * | 1987-06-08 | 1987-07-15 | Philips Electronic Associated | Semiconductor device |
JPH01129451A (ja) * | 1987-11-16 | 1989-05-22 | Fujitsu Ltd | 半導体装置 |
JP2788269B2 (ja) * | 1988-02-08 | 1998-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5093707A (en) * | 1988-04-27 | 1992-03-03 | Kabushiki Kaisha Toshiba | Semiconductor device with bipolar and cmos transistors |
USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
US5297097A (en) | 1988-06-17 | 1994-03-22 | Hitachi Ltd. | Large scale integrated circuit for low voltage operation |
JP2845493B2 (ja) * | 1988-06-24 | 1999-01-13 | 株式会社東芝 | 半導体装置 |
JPH03153070A (ja) * | 1989-11-10 | 1991-07-01 | Seiko Epson Corp | 半導体装置 |
JPH0744231B2 (ja) * | 1989-11-10 | 1995-05-15 | 株式会社東芝 | 半導体集積回路およびその製造方法 |
JPH07109860B2 (ja) * | 1990-01-19 | 1995-11-22 | 株式会社東芝 | 電荷転送デバイスを含む半導体装置およびその製造方法 |
US5260228A (en) * | 1990-01-19 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors |
JPH07109861B2 (ja) * | 1990-01-19 | 1995-11-22 | 株式会社東芝 | 電荷転送デバイスを含む半導体装置およびその製造方法 |
KR940005725B1 (ko) * | 1990-04-13 | 1994-06-23 | 가부시키가이샤 도시바 | 반도체 기억장치 및 그 캐리어주입방지방법 |
JPH03296260A (ja) * | 1990-04-16 | 1991-12-26 | Toshiba Corp | Mos型半導体装置 |
JPH0423147U (ko) * | 1990-06-20 | 1992-02-26 | ||
JP2609743B2 (ja) * | 1990-06-28 | 1997-05-14 | 三菱電機株式会社 | 半導体装置 |
KR940009357B1 (ko) * | 1991-04-09 | 1994-10-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
US5248624A (en) * | 1991-08-23 | 1993-09-28 | Exar Corporation | Method of making isolated vertical pnp transistor in a complementary bicmos process with eeprom memory |
JPH05129425A (ja) * | 1991-10-30 | 1993-05-25 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
US5595925A (en) * | 1994-04-29 | 1997-01-21 | Texas Instruments Incorporated | Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein |
JP4037470B2 (ja) | 1994-06-28 | 2008-01-23 | エルピーダメモリ株式会社 | 半導体装置 |
TW362275B (en) * | 1996-09-05 | 1999-06-21 | Matsushita Electronics Corp | Semiconductor device and method for producing the same |
US6107672A (en) * | 1997-09-04 | 2000-08-22 | Matsushita Electronics Corporation | Semiconductor device having a plurality of buried wells |
JP4012341B2 (ja) | 1999-07-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US6901006B1 (en) | 1999-07-14 | 2005-05-31 | Hitachi, Ltd. | Semiconductor integrated circuit device including first, second and third gates |
JP2001291779A (ja) * | 2000-04-05 | 2001-10-19 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
JP2004311684A (ja) * | 2003-04-07 | 2004-11-04 | Sanyo Electric Co Ltd | 半導体装置 |
US20040228168A1 (en) | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
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US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
US7683430B2 (en) | 2005-12-19 | 2010-03-23 | Innovative Silicon Isi Sa | Electrically floating body memory cell and array, and method of operating or controlling same |
US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
US7933142B2 (en) | 2006-05-02 | 2011-04-26 | Micron Technology, Inc. | Semiconductor memory cell and array using punch-through to program and read same |
US8069377B2 (en) | 2006-06-26 | 2011-11-29 | Micron Technology, Inc. | Integrated circuit having memory array including ECC and column redundancy and method of operating the same |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
JPS567463A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS57194565A (en) * | 1981-05-25 | 1982-11-30 | Toshiba Corp | Semiconductor memory device |
JPS5922359A (ja) * | 1982-07-29 | 1984-02-04 | Nec Corp | 集積化半導体記憶装置 |
JPS59143359A (ja) * | 1983-01-31 | 1984-08-16 | ストレイジ、テクノロジ−、パ−トナ−ズ | Cmos集積回路 |
JPS59144168A (ja) * | 1983-02-07 | 1984-08-18 | Hitachi Ltd | バイポ−ラmos半導体装置及びその製造法 |
-
1985
- 1985-11-20 JP JP60258506A patent/JPH0671067B2/ja not_active Expired - Lifetime
-
1986
- 1986-11-12 KR KR1019870700554A patent/KR950007573B1/ko not_active IP Right Cessation
- 1986-11-12 WO PCT/JP1986/000579 patent/WO1987003423A1/ja active IP Right Grant
- 1986-11-12 DE DE3650613T patent/DE3650613T2/de not_active Expired - Fee Related
- 1986-11-12 SG SG1996009506A patent/SG59995A1/en unknown
- 1986-11-12 EP EP86906927A patent/EP0245515B1/en not_active Expired - Lifetime
-
1998
- 1998-03-27 HK HK98102615A patent/HK1003586A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0245515A4 (en) | 1990-12-27 |
JPH0671067B2 (ja) | 1994-09-07 |
EP0245515B1 (en) | 1997-04-16 |
WO1987003423A1 (en) | 1987-06-04 |
DE3650613T2 (de) | 1997-10-23 |
KR950007573B1 (ko) | 1995-07-12 |
EP0245515A1 (en) | 1987-11-19 |
SG59995A1 (en) | 1999-02-22 |
JPS62119958A (ja) | 1987-06-01 |
HK1003586A1 (en) | 1998-10-30 |
DE3650613D1 (de) | 1997-05-22 |
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