KR870005474A - 래치·엎을 방지한 Bi-CMOS반도체 장치 - Google Patents

래치·엎을 방지한 Bi-CMOS반도체 장치 Download PDF

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Publication number
KR870005474A
KR870005474A KR860009107A KR860009107A KR870005474A KR 870005474 A KR870005474 A KR 870005474A KR 860009107 A KR860009107 A KR 860009107A KR 860009107 A KR860009107 A KR 860009107A KR 870005474 A KR870005474 A KR 870005474A
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South Korea
Prior art keywords
semiconductor device
region
electrodes
main current
spill
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KR860009107A
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English (en)
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KR930004815B1 (ko
Inventor
히사유기 히구지
마고도 스즈기
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미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR870005474A publication Critical patent/KR870005474A/ko
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Publication of KR930004815B1 publication Critical patent/KR930004815B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

래치·엎을 방지한 Bi-CMOS반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명자등이 래치엎의 해석에 사용한 회로를 도시한 도면,
제3도는 본 발명의 제1의 실시예를 도시한 단면도,
제4도는 본 발명의 제2의 실시예를 도시한 단면도.

Claims (3)

  1. 소수 캐리어가 확산에 의해서 도달할 수 있는 영역내에 PNPN 혹은 NPNP구조를 가지며, 적어도 1대의 P,N영역에 같은 전위, 또는 PN접합에 역방향 전압이 가해져서 동작시키는 MOSFET와 바이폴러트랜지스터를 복합화한 디바이스에 있어서, 어떠한 PN 접합을 형성하는 P,N의 양영역에 각각 전극을 마련하고, 그 전극에 적어도 0.5V이상의 역방향 전압을 가해서 동작시키는 것을 특징으로 하는 반도체 장치.
  2. 특허청구의 범위 제1항 기재의 반도체 장치에 있어서, 사이리스터 동작을 하였을때에, 주(主)전류되는 바이폴러 트랜지스터의 코렉터 전극을 붙이는 부분에서 에미터 영역 가까이 까지와, 그 연장상 이외의 코렉터 저항 매입층상에 MOS·FET를 마련하는 것을 특징으로 하는 반도체 장치.
  3. 특허청구의 범위 제1항 기재의 반도체 장치에 있어서, 사이리스터 동작을 하였을때에 주 전류로도 되는 P형 또는 N형 영역에 여러개의 전극을 마련하고, 주 전류로에 있어서의 전압 강하후의 전위를 끄집어내어, 이것을 NOS·FET의 소오스 전극에 접속한 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009107A 1985-11-15 1986-10-30 래치 엎을 방지한 Bi-CMOS 반도체 장치 KR930004815B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60254748A JPH0793383B2 (ja) 1985-11-15 1985-11-15 半導体装置
JP60-254748 1985-11-15

Publications (2)

Publication Number Publication Date
KR870005474A true KR870005474A (ko) 1987-06-09
KR930004815B1 KR930004815B1 (ko) 1993-06-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009107A KR930004815B1 (ko) 1985-11-15 1986-10-30 래치 엎을 방지한 Bi-CMOS 반도체 장치

Country Status (3)

Country Link
US (1) US4825274A (ko)
JP (1) JPH0793383B2 (ko)
KR (1) KR930004815B1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3855922T2 (de) * 1987-02-26 1998-01-02 Toshiba Kawasaki Kk An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
JP2746883B2 (ja) * 1987-09-11 1998-05-06 キヤノン株式会社 光電変換装置
US5117274A (en) * 1987-10-06 1992-05-26 Motorola, Inc. Merged complementary bipolar and MOS means and method
US5121185A (en) * 1987-10-09 1992-06-09 Hitachi, Ltd. Monolithic semiconductor IC device including blocks having different functions with different breakdown voltages
GB8810973D0 (en) * 1988-05-10 1988-06-15 Stc Plc Improvements in integrated circuits
DE3914910C2 (de) * 1988-05-10 1999-11-25 Northern Telecom Ltd Verfahren zur Herstellung einer integrierten Schaltung
US5468989A (en) * 1988-06-02 1995-11-21 Hitachi, Ltd. Semiconductor integrated circuit device having an improved vertical bipolar transistor structure
SE461428B (sv) * 1988-06-16 1990-02-12 Ericsson Telefon Ab L M Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
JPH02101747A (ja) * 1988-10-11 1990-04-13 Toshiba Corp 半導体集積回路とその製造方法
JPH02162760A (ja) * 1988-12-15 1990-06-22 Nec Corp 半導体集積回路
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device
JP2632420B2 (ja) * 1989-02-23 1997-07-23 三菱電機株式会社 半導体集積回路
US5198691A (en) * 1989-04-10 1993-03-30 Tarng Min M BiMOS devices and BiMOS memories
US4975764A (en) * 1989-06-22 1990-12-04 David Sarnoff Research Center, Inc. High density BiCMOS circuits and methods of making same
US5116777A (en) * 1990-04-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
US5442220A (en) * 1993-03-10 1995-08-15 Nec Corporation Constant voltage diode having a reduced leakage current and a high electrostatic breakdown voltage
US5538908A (en) * 1995-04-27 1996-07-23 Lg Semicon Co., Ltd. Method for manufacturing a BiCMOS semiconductor device
US7304354B2 (en) * 2004-02-17 2007-12-04 Silicon Space Technology Corp. Buried guard ring and radiation hardened isolation structures and fabrication methods
US10038058B2 (en) 2016-05-07 2018-07-31 Silicon Space Technology Corporation FinFET device structure and method for forming same
US10699914B1 (en) * 2017-08-23 2020-06-30 Synopsys, Inc. On-chip heating and self-annealing in FinFETs with anti-punch-through implants

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE788874A (fr) * 1971-09-17 1973-01-02 Western Electric Co Module de circuit integre
JPS5937860B2 (ja) * 1976-11-12 1984-09-12 株式会社日立製作所 半導体集積回路装置
JPS598431A (ja) * 1982-07-07 1984-01-17 Hitachi Ltd バツフア回路
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication

Also Published As

Publication number Publication date
US4825274A (en) 1989-04-25
JPS62115765A (ja) 1987-05-27
JPH0793383B2 (ja) 1995-10-09
KR930004815B1 (ko) 1993-06-08

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