BE788874A - Module de circuit integre - Google Patents

Module de circuit integre

Info

Publication number
BE788874A
BE788874A BE788874DA BE788874A BE 788874 A BE788874 A BE 788874A BE 788874D A BE788874D A BE 788874DA BE 788874 A BE788874 A BE 788874A
Authority
BE
Belgium
Prior art keywords
integrated circuit
circuit module
module
integrated
circuit
Prior art date
Application number
Other languages
English (en)
Inventor
G T Cheney
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE788874A publication Critical patent/BE788874A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
BE788874D 1971-09-17 Module de circuit integre BE788874A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18147871A 1971-09-17 1971-09-17

Publications (1)

Publication Number Publication Date
BE788874A true BE788874A (fr) 1973-01-02

Family

ID=22664436

Family Applications (1)

Application Number Title Priority Date Filing Date
BE788874D BE788874A (fr) 1971-09-17 Module de circuit integre

Country Status (10)

Country Link
US (1) US3731164A (fr)
JP (1) JPS4839175A (fr)
BE (1) BE788874A (fr)
CA (1) CA942432A (fr)
DE (1) DE2245063A1 (fr)
FR (1) FR2153038B1 (fr)
GB (1) GB1396896A (fr)
IT (1) IT975001B (fr)
NL (1) NL7212545A (fr)
SE (1) SE373693B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2309616C2 (de) * 1973-02-27 1982-11-11 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiterspeicherschaltung
JPS5226181A (en) * 1975-08-22 1977-02-26 Nippon Telegr & Teleph Corp <Ntt> Semi-conductor integrated circuit unit
JPS5325375A (en) * 1976-07-31 1978-03-09 Nippon Gakki Seizo Kk Semiconductor integrated circuit devi ce
US4150392A (en) * 1976-07-31 1979-04-17 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors
US4085417A (en) * 1976-12-27 1978-04-18 National Semiconductor Corporation JFET switch circuit and structure
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
US4200878A (en) * 1978-06-12 1980-04-29 Rca Corporation Method of fabricating a narrow base-width bipolar device and the product thereof
JPS5563868A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor integrated circuit
US4276616A (en) * 1979-04-23 1981-06-30 Fairchild Camera & Instrument Corp. Merged bipolar/field-effect bistable memory cell
EP0021777B1 (fr) * 1979-06-18 1983-10-19 Fujitsu Limited Dispositif semi-conducteur de mémoire non volatile
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS5764761A (en) * 1980-10-09 1982-04-20 Toshiba Corp Developing device
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4489341A (en) * 1982-09-27 1984-12-18 Sprague Electric Company Merged-transistor switch with extra P-type region
JPS59182563A (ja) * 1983-03-31 1984-10-17 Fujitsu Ltd 半導体装置
EP0180003A3 (fr) * 1984-09-28 1988-01-13 Siemens Aktiengesellschaft Transistor bipolaire de puissance
EP0176771A3 (fr) * 1984-09-28 1988-01-13 Siemens Aktiengesellschaft Transistor bipolaire de puissance à tension de claquage variable
JPH0793383B2 (ja) * 1985-11-15 1995-10-09 株式会社日立製作所 半導体装置
US4786961A (en) * 1986-02-28 1988-11-22 General Electric Company Bipolar transistor with transient suppressor
DE3900426B4 (de) * 1988-01-08 2006-01-19 Kabushiki Kaisha Toshiba, Kawasaki Verfahren zum Betreiben einer Halbleiteranordnung
GB8914554D0 (en) * 1989-06-24 1989-08-16 Lucas Ind Plc Semiconductor device
TW260816B (fr) * 1991-12-16 1995-10-21 Philips Nv
US6940300B1 (en) * 1998-09-23 2005-09-06 International Business Machines Corporation Integrated circuits for testing an active matrix display array
US8546884B2 (en) * 2002-10-29 2013-10-01 Avago Technologies General Ip (Singapore) Pte. Ltd. High value resistors in gallium arsenide
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL152708B (nl) * 1967-02-28 1977-03-15 Philips Nv Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.
US3510735A (en) * 1967-04-13 1970-05-05 Scient Data Systems Inc Transistor with integral pinch resistor

Also Published As

Publication number Publication date
JPS4839175A (fr) 1973-06-08
NL7212545A (fr) 1973-03-20
FR2153038B1 (fr) 1977-04-01
FR2153038A1 (fr) 1973-04-27
GB1396896A (en) 1975-06-11
US3731164A (en) 1973-05-01
CA942432A (en) 1974-02-19
DE2245063A1 (de) 1973-03-22
IT975001B (it) 1974-07-20
SE373693B (sv) 1975-02-10

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