SE8203432L - Tvapoligt overstromsskydd - Google Patents

Tvapoligt overstromsskydd

Info

Publication number
SE8203432L
SE8203432L SE8203432A SE8203432A SE8203432L SE 8203432 L SE8203432 L SE 8203432L SE 8203432 A SE8203432 A SE 8203432A SE 8203432 A SE8203432 A SE 8203432A SE 8203432 L SE8203432 L SE 8203432L
Authority
SE
Sweden
Prior art keywords
thyristor
cathode
layer
emitter
mos transistor
Prior art date
Application number
SE8203432A
Other languages
Unknown language ( )
English (en)
Other versions
SE431381B (sv
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE8203432A priority Critical patent/SE431381B/sv
Priority to US06/497,326 priority patent/US4509089A/en
Priority to EP83710030A priority patent/EP0096651B1/de
Priority to DE8383710030T priority patent/DE3361213D1/de
Priority to JP58097029A priority patent/JPS58219763A/ja
Publication of SE8203432L publication Critical patent/SE8203432L/sv
Publication of SE431381B publication Critical patent/SE431381B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H01L27/0694—Integrated circuits having a three-dimensional layout comprising components formed on opposite sides of a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE8203432A 1982-06-03 1982-06-03 Tvapoligt overstromsskydd SE431381B (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE8203432A SE431381B (sv) 1982-06-03 1982-06-03 Tvapoligt overstromsskydd
US06/497,326 US4509089A (en) 1982-06-03 1983-05-23 Two-pole overcurrent protection device
EP83710030A EP0096651B1 (de) 1982-06-03 1983-05-24 Zweipoliger Überstromschutz
DE8383710030T DE3361213D1 (en) 1982-06-03 1983-05-24 Two-pole overcurrent protection
JP58097029A JPS58219763A (ja) 1982-06-03 1983-06-02 二端子過電流保護装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8203432A SE431381B (sv) 1982-06-03 1982-06-03 Tvapoligt overstromsskydd

Publications (2)

Publication Number Publication Date
SE8203432L true SE8203432L (sv) 1983-12-04
SE431381B SE431381B (sv) 1984-01-30

Family

ID=20346955

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8203432A SE431381B (sv) 1982-06-03 1982-06-03 Tvapoligt overstromsskydd

Country Status (5)

Country Link
US (1) US4509089A (sv)
EP (1) EP0096651B1 (sv)
JP (1) JPS58219763A (sv)
DE (1) DE3361213D1 (sv)
SE (1) SE431381B (sv)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
US4958250B1 (en) * 1985-08-19 1996-06-04 Edward J Kotski Voltage isolation apparatus for service transformers
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
GB8713440D0 (en) * 1987-06-09 1987-07-15 Texas Instruments Ltd Semiconductor device
EP0354435B1 (en) * 1988-08-12 1995-12-20 Hitachi, Ltd. A drive circuit for an insulated gate transistor; and its use in a switching circuit, a current switching apparatus and an induction motor system
EP0538507B1 (de) * 1991-10-22 1996-12-27 Deutsche ITT Industries GmbH Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen
FR2683947B1 (fr) * 1991-11-18 1994-02-18 Sgs Thomson Microelectronics Sa Diode de protection monolithique basse tension a faible capacite.
GB9127476D0 (en) * 1991-12-30 1992-02-19 Texas Instruments Ltd A semiconductor integrated circuit
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.
US5436786A (en) * 1992-12-21 1995-07-25 Dairyland Electrical Industries, Inc. Isolator surge protector for DC isolation and AC grounding of cathodically protected systems
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
CA2183176C (en) * 1995-08-18 2000-10-24 Brian R. Pelly High power dc blocking device for ac and fault current grounding
US5856904A (en) * 1996-11-15 1999-01-05 Dairyland Electrical Industries, Inc. Voltage and current based control and triggering for isolator surge protector
JP4198251B2 (ja) 1999-01-07 2008-12-17 三菱電機株式会社 電力用半導体装置およびその製造方法
US10193322B2 (en) 2015-11-13 2019-01-29 Silicon Power Corporation Low-loss and fast acting solid-state breaker

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263128A (en) * 1962-07-23 1966-07-26 Richard L White Circuit breaker
JPS5115394B1 (sv) * 1969-11-20 1976-05-17
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning

Also Published As

Publication number Publication date
EP0096651B1 (de) 1985-11-13
DE3361213D1 (en) 1985-12-19
US4509089A (en) 1985-04-02
EP0096651A1 (de) 1983-12-21
JPS58219763A (ja) 1983-12-21
SE431381B (sv) 1984-01-30

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