KR890015426A - Mos제어 다이리스터(mct) - Google Patents

Mos제어 다이리스터(mct) Download PDF

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Publication number
KR890015426A
KR890015426A KR1019890002858A KR890002858A KR890015426A KR 890015426 A KR890015426 A KR 890015426A KR 1019890002858 A KR1019890002858 A KR 1019890002858A KR 890002858 A KR890002858 A KR 890002858A KR 890015426 A KR890015426 A KR 890015426A
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KR
South Korea
Prior art keywords
region
mct
cathode
mos control
drain region
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KR1019890002858A
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English (en)
Inventor
바우어 호오스트 그뤼닝 프리드헬륨
Original Assignee
한스 욧.헤체르,게르트 뤼크
아세아 브라운 보베리 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 한스 욧.헤체르,게르트 뤼크, 아세아 브라운 보베리 리미티드 filed Critical 한스 욧.헤체르,게르트 뤼크
Publication of KR890015426A publication Critical patent/KR890015426A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

MOS제어 다이리스터(MCT)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4 도는 본 발명의 실시예에 따른 개량된 n형 채널 MCT의 구조를 도시한 도면.

Claims (4)

  1. p형 이미터층(9), n형 베이스층(8), p형 베이스층(7) 및 에노드(A)와 캐쏘드(K)사이의 n형 이미터층(5)을 포함하는 다양한 도우핑층의 연속체와; 소오스 영역(4), 채널 영역, 드레인 영역 및 절연된 게이트 전극(3)을 가지는 MOSFET 구조를 거쳐 각각 제어될 수 있으며 스위치 온 상태에서 캐쏘드 접촉부(1)에 대해 p형 베이스층(7)을 단락시킨 캐쏘드측의 복수개의 캐쏘드 단락을 구비하며, p형 베이스층(7)은 드레인 접촉부(11)을 거쳐 드레인 영역에 접속되며 소오스 영역(4)은 캐쏘드 접촉부(1)와 접촉하는 n형 이미터층(5)의 일부인, 애노드(A)와 캐쏘드(K)를 갖는 MOS제어 다이리스터(MCT)에 있어서, n도우핑 영역의 형태로 결합된 채널 드레인 영역(13)이 소오스 영역(4)과 드레인 접촉부(11)사이에 배치되는 MOS제어 다이리스트(MCT).
  2. 제 1 항에 있어서, 결합된 채널 드레인 영역 (13)의 n도우핑은 전압이 게이트 전극(3)에 인가되면 그 영역이 그의 전 깊이를 통해서 디플리이팅 될 수 있게 선택되는 MOS제어 다이리스터(MCT).
  3. 제 2 항에 있어서, 결합된 채널 드레인 영역(13)의 n도우핑이 1017㎝-3의 농도 영역인 MOS제어 다이리스터(MCT).
  4. 제 1 항에 있어서, 드레인 접촉부(11)가 실리사이드로 구성된 MOS제어 다이리스터(MCT).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890002858A 1988-03-10 1989-03-08 Mos제어 다이리스터(mct) KR890015426A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH903/88-4 1988-03-10
CH90388 1988-03-10

Publications (1)

Publication Number Publication Date
KR890015426A true KR890015426A (ko) 1989-10-30

Family

ID=4197863

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890002858A KR890015426A (ko) 1988-03-10 1989-03-08 Mos제어 다이리스터(mct)

Country Status (6)

Country Link
US (1) US4954869A (ko)
EP (1) EP0331892B1 (ko)
JP (1) JPH02148766A (ko)
KR (1) KR890015426A (ko)
AT (1) ATE74466T1 (ko)
DE (1) DE58901063D1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2839595B2 (ja) * 1989-11-30 1998-12-16 株式会社東芝 絶縁ゲート付きｇｔｏサイリスタ
DE4102099A1 (de) * 1990-02-13 1991-08-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement
EP0522712B1 (en) * 1991-06-10 1999-03-24 Kabushiki Kaisha Toshiba Thyristor with insulated gate
DE4126491A1 (de) * 1991-08-10 1993-02-11 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement
USH1476H (en) * 1991-09-26 1995-09-05 The United States Of America As Represented By The Secretary Of The Army Circuitry for igniting detonators
US5294816A (en) * 1992-06-10 1994-03-15 North Carolina State University At Raleigh Unit cell arrangement for emitter switched thyristor with base resistance control
US5198687A (en) * 1992-07-23 1993-03-30 Baliga Bantval J Base resistance controlled thyristor with single-polarity turn-on and turn-off control
US5293054A (en) * 1992-11-23 1994-03-08 North Carolina State University At Raleigh Emitter switched thyristor without parasitic thyristor latch-up susceptibility
US5241194A (en) * 1992-12-14 1993-08-31 North Carolina State University At Raleigh Base resistance controlled thyristor with integrated single-polarity gate control
US5306930A (en) * 1992-12-14 1994-04-26 North Carolina State University At Raleigh Emitter switched thyristor with buried dielectric layer
US5396087A (en) * 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
US5493134A (en) * 1994-11-14 1996-02-20 North Carolina State University Bidirectional AC switching device with MOS-gated turn-on and turn-off control
US5793066A (en) * 1995-09-26 1998-08-11 International Rectifier Corporation Base resistance controlled thyristor structure with high-density layout for increased current capacity
US5769437A (en) * 1996-06-10 1998-06-23 Gasperino; Joseph A. Handtruck holsters for door stops and clipboards
EP4167293A1 (en) * 2020-06-10 2023-04-19 Electronics and Telecommunications Research Institute Mos-controlled thyristor element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4359486A (en) * 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
US4485550A (en) * 1982-07-23 1984-12-04 At&T Bell Laboratories Fabrication of schottky-barrier MOS FETs
DE3330022A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Thyristor
EP0199293B2 (en) * 1985-04-24 1995-08-30 General Electric Company Insulated gate semiconductor device

Also Published As

Publication number Publication date
DE58901063D1 (de) 1992-05-07
US4954869A (en) 1990-09-04
JPH02148766A (ja) 1990-06-07
ATE74466T1 (de) 1992-04-15
EP0331892A1 (de) 1989-09-13
EP0331892B1 (de) 1992-04-01

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