KR890015426A - Mos제어 다이리스터(mct) - Google Patents
Mos제어 다이리스터(mct) Download PDFInfo
- Publication number
- KR890015426A KR890015426A KR1019890002858A KR890002858A KR890015426A KR 890015426 A KR890015426 A KR 890015426A KR 1019890002858 A KR1019890002858 A KR 1019890002858A KR 890002858 A KR890002858 A KR 890002858A KR 890015426 A KR890015426 A KR 890015426A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- mct
- cathode
- mos control
- drain region
- Prior art date
Links
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 230000036039 immunity Effects 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4 도는 본 발명의 실시예에 따른 개량된 n형 채널 MCT의 구조를 도시한 도면.
Claims (4)
- p형 이미터층(9), n형 베이스층(8), p형 베이스층(7) 및 에노드(A)와 캐쏘드(K)사이의 n형 이미터층(5)을 포함하는 다양한 도우핑층의 연속체와; 소오스 영역(4), 채널 영역, 드레인 영역 및 절연된 게이트 전극(3)을 가지는 MOSFET 구조를 거쳐 각각 제어될 수 있으며 스위치 온 상태에서 캐쏘드 접촉부(1)에 대해 p형 베이스층(7)을 단락시킨 캐쏘드측의 복수개의 캐쏘드 단락을 구비하며, p형 베이스층(7)은 드레인 접촉부(11)을 거쳐 드레인 영역에 접속되며 소오스 영역(4)은 캐쏘드 접촉부(1)와 접촉하는 n형 이미터층(5)의 일부인, 애노드(A)와 캐쏘드(K)를 갖는 MOS제어 다이리스터(MCT)에 있어서, n도우핑 영역의 형태로 결합된 채널 드레인 영역(13)이 소오스 영역(4)과 드레인 접촉부(11)사이에 배치되는 MOS제어 다이리스트(MCT).
- 제 1 항에 있어서, 결합된 채널 드레인 영역 (13)의 n도우핑은 전압이 게이트 전극(3)에 인가되면 그 영역이 그의 전 깊이를 통해서 디플리이팅 될 수 있게 선택되는 MOS제어 다이리스터(MCT).
- 제 2 항에 있어서, 결합된 채널 드레인 영역(13)의 n도우핑이 1017㎝-3의 농도 영역인 MOS제어 다이리스터(MCT).
- 제 1 항에 있어서, 드레인 접촉부(11)가 실리사이드로 구성된 MOS제어 다이리스터(MCT).※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH90388 | 1988-03-10 | ||
CH903/88-4 | 1988-03-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890015426A true KR890015426A (ko) | 1989-10-30 |
Family
ID=4197863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890002858A KR890015426A (ko) | 1988-03-10 | 1989-03-08 | Mos제어 다이리스터(mct) |
Country Status (6)
Country | Link |
---|---|
US (1) | US4954869A (ko) |
EP (1) | EP0331892B1 (ko) |
JP (1) | JPH02148766A (ko) |
KR (1) | KR890015426A (ko) |
AT (1) | ATE74466T1 (ko) |
DE (1) | DE58901063D1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2839595B2 (ja) * | 1989-11-30 | 1998-12-16 | 株式会社東芝 | 絶縁ゲート付きgtoサイリスタ |
DE4102099A1 (de) * | 1990-02-13 | 1991-08-14 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement |
EP0522712B1 (en) * | 1991-06-10 | 1999-03-24 | Kabushiki Kaisha Toshiba | Thyristor with insulated gate |
DE4126491A1 (de) * | 1991-08-10 | 1993-02-11 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement |
USH1476H (en) * | 1991-09-26 | 1995-09-05 | The United States Of America As Represented By The Secretary Of The Army | Circuitry for igniting detonators |
US5294816A (en) * | 1992-06-10 | 1994-03-15 | North Carolina State University At Raleigh | Unit cell arrangement for emitter switched thyristor with base resistance control |
US5198687A (en) * | 1992-07-23 | 1993-03-30 | Baliga Bantval J | Base resistance controlled thyristor with single-polarity turn-on and turn-off control |
US5293054A (en) * | 1992-11-23 | 1994-03-08 | North Carolina State University At Raleigh | Emitter switched thyristor without parasitic thyristor latch-up susceptibility |
US5306930A (en) * | 1992-12-14 | 1994-04-26 | North Carolina State University At Raleigh | Emitter switched thyristor with buried dielectric layer |
US5396087A (en) * | 1992-12-14 | 1995-03-07 | North Carolina State University | Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up |
US5241194A (en) * | 1992-12-14 | 1993-08-31 | North Carolina State University At Raleigh | Base resistance controlled thyristor with integrated single-polarity gate control |
US5493134A (en) * | 1994-11-14 | 1996-02-20 | North Carolina State University | Bidirectional AC switching device with MOS-gated turn-on and turn-off control |
US5793066A (en) * | 1995-09-26 | 1998-08-11 | International Rectifier Corporation | Base resistance controlled thyristor structure with high-density layout for increased current capacity |
US5769437A (en) * | 1996-06-10 | 1998-06-23 | Gasperino; Joseph A. | Handtruck holsters for door stops and clipboards |
WO2021251764A1 (ko) * | 2020-06-10 | 2021-12-16 | 한국전자통신연구원 | 모스 구동 사이리스터 소자 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
US4359486A (en) * | 1980-08-28 | 1982-11-16 | Siemens Aktiengesellschaft | Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation |
US4485550A (en) * | 1982-07-23 | 1984-12-04 | At&T Bell Laboratories | Fabrication of schottky-barrier MOS FETs |
DE3330022A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
DE3677627D1 (de) * | 1985-04-24 | 1991-04-04 | Gen Electric | Halbleiteranordnung mit isoliertem gate. |
-
1989
- 1989-01-27 DE DE8989101394T patent/DE58901063D1/de not_active Expired - Fee Related
- 1989-01-27 AT AT89101394T patent/ATE74466T1/de not_active IP Right Cessation
- 1989-01-27 EP EP89101394A patent/EP0331892B1/de not_active Expired - Lifetime
- 1989-03-02 US US07/318,154 patent/US4954869A/en not_active Expired - Fee Related
- 1989-03-08 KR KR1019890002858A patent/KR890015426A/ko not_active Application Discontinuation
- 1989-03-09 JP JP1057682A patent/JPH02148766A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ATE74466T1 (de) | 1992-04-15 |
EP0331892B1 (de) | 1992-04-01 |
DE58901063D1 (de) | 1992-05-07 |
EP0331892A1 (de) | 1989-09-13 |
US4954869A (en) | 1990-09-04 |
JPH02148766A (ja) | 1990-06-07 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |