KR890016631A - 절환이 용이한 전력 반도체 소자 - Google Patents

절환이 용이한 전력 반도체 소자 Download PDF

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Publication number
KR890016631A
KR890016631A KR1019890005290A KR890005290A KR890016631A KR 890016631 A KR890016631 A KR 890016631A KR 1019890005290 A KR1019890005290 A KR 1019890005290A KR 890005290 A KR890005290 A KR 890005290A KR 890016631 A KR890016631 A KR 890016631A
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South Korea
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doped
unit cells
semiconductor device
power semiconductor
mct
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KR1019890005290A
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KR0144682B1 (ko
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바우어 호오스트 그뤼닝 프리드헬름
Original Assignee
한스 욧.헤체르, 게르트 뤼크
아세아 브라운 보베리 리미티드
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Publication of KR890016631A publication Critical patent/KR890016631A/ko
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Publication of KR0144682B1 publication Critical patent/KR0144682B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Led Devices (AREA)

Abstract

내용 없음

Description

절환이 용이한 전력 반도체 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 도는 본 발명에 따른 인접하여 위치한 MCT 및 IGBT 단위셀에 대한 실시예를 도시한다.

Claims (7)

  1. (a) 복수개의 단위셀이 서로 이웃하여 배열되고 애노드(A)와 캐쏘드(K) 사이의 반도체 기판에 평행하게 접속되고 ; (b) 각각의 상기 단위셀들이 전계 효과로 제어되는 단락회로에 의해 스위칭 오프될 수 있는 MOS제어 다이리스터(MCT=MOS Controlled Thyristor)로서 구성되며 ; (c) 소자의 전계 효과로 제어되는 스위칭 온을 확실시하는 수단이 추가로 제공되는 ; 스위칭 오프가 용이한 전력 반도체 소자에 있어서, (d) 부가 수단이 MCT 단위셀들 사이에 배열되고 그 단위셀들과 병렬로, 접속되는 단위셀들을 추가로 포함하며 ; (e) 각각의 추가 단위셀들이 절열된 게이트를 가진 바이폴라 트랜지스터(IGBT=Insulated Gate Bipolar Transistor) 구조를 가지는 절환이 용이한 전력 반도체 소자.
  2. 제 1 항에 있어서, (a) 각 MCT 단위셀이 애노드(A) 와 캐쏘드(K) 사이에서, p로 두우핑된 p형 형 이미터층, n으로 도우핑된 n형 베이스층, p로 도우핑된 p형 베이스층(7) 및 n으로 도우핑된 채녈 영역(5)과 옆으로 인접하고 p로 도우핑된 소오스 영역(4)이 함몰된 n로 도우핑된 n형 이미터 영역(6)으로 구성된 층 시퀀스를 포함하고 ; (b)MCT 단위셀들에서, 소오스 영역(4), 채널 영역(5) 및 p형 베이스층(7)은 반도체소자 기판(14)의 캐쏘드측 표면에서 서로 이웃하여 나타 각 경우에서 그 위에 위치된 절연된 게이트 전극(3)으로써 p채널 MOSFET을 형성하며 ; (c) 각 IGBT 단위셀은 애노드(A) 와 캐쏘드(K) 사이에, p도우핑된 p형 이미터층, n로 도우핑된 n형 베이스층 및 p로 도우핑된 채널 영역(12)과 옆으로 인접하며 n+로 도우핑된 소오스 영역(11)이 함몰된 p로 도우핑된 p형 영역(13)으로 구성된 층 시퀀스를 포함하며 ; (d) IGBT 단위셀들에서, 소오스 영역(11), 채널 영역(12) 및 n형 베이스층은 반도체 기판(14)의 캐쏘드측 표면에서 서로 이웃하여 나타나고 각 경우에 그위에 위치된 절연 게이트 전극(3)으로써 n채널 MOSFET을 형성하며 ; (e) 양쪽의 기본셀들의 p형 이미터층들 및 n형 베이스층들은 각 경우에 반도체 기판(14)위에 옆으로 각각 확장된 공통의 p형 이미터층(9) 또는 n형 베이스층(8)의 일부인 ; 절환이 용이한 전력 반도체 소자.
  3. 제 2 항에 있어서, 모든 단위셀들이 층 시퀀스가 그들의 상보 층 시퀀스로 대체되는 절환이 용이한 전력반도체 소자.
  4. 제2 및 3항에 있어서, 모든 단위셀들이 게이트 전극들(3)이 동일한 전위에 있는 절환이 용이한 전력 반도체 소자.
  5. 제 1 항에 있어서, 소자당 MCT 단위셀들 및 IGBT 단위셀들의 수가 같지 않은 절환이 용이한 전력 반도체 소자.
  6. 제 5 항에 있어서, IGBT 단위셀들의 수 대 MCT 단위셀들의 수의 비가 2 : 1인 절환이 용이한 전력 반도체 소자.
  7. 제 6 항에 있어서, 이 비가 약 3 : 1인 절환이 용이한 전력 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890005290A 1988-04-22 1989-04-21 스위치 오프가 용이한 전력 반도체 소자 KR0144682B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH1520/88-4 1988-04-22
CH152088 1988-04-22

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KR890016631A true KR890016631A (ko) 1989-11-29
KR0144682B1 KR0144682B1 (ko) 1998-07-01

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Country Link
US (1) US4967244A (ko)
EP (1) EP0340445B1 (ko)
JP (2) JPH0212969A (ko)
KR (1) KR0144682B1 (ko)
AT (1) ATE93654T1 (ko)
DE (2) DE58905355D1 (ko)

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Also Published As

Publication number Publication date
DE58905355D1 (de) 1993-09-30
DE4011509A1 (de) 1990-10-25
ATE93654T1 (de) 1993-09-15
EP0340445A1 (de) 1989-11-08
US4967244A (en) 1990-10-30
JPH0212969A (ja) 1990-01-17
KR0144682B1 (ko) 1998-07-01
JPH10219U (ja) 1998-09-25
EP0340445B1 (de) 1993-08-25

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