GB2609343B - Power Semiconductor Device - Google Patents
Power Semiconductor Device Download PDFInfo
- Publication number
- GB2609343B GB2609343B GB2215522.0A GB202215522A GB2609343B GB 2609343 B GB2609343 B GB 2609343B GB 202215522 A GB202215522 A GB 202215522A GB 2609343 B GB2609343 B GB 2609343B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- power semiconductor
- power
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
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- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Rectifiers (AREA)
- Dc-Dc Converters (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2215522.0A GB2609343B (en) | 2018-07-23 | 2018-07-23 | Power Semiconductor Device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1811989.1A GB2575809B (en) | 2018-07-23 | 2018-07-23 | Power Semiconductor device |
GB2215522.0A GB2609343B (en) | 2018-07-23 | 2018-07-23 | Power Semiconductor Device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB202215522D0 GB202215522D0 (en) | 2022-12-07 |
GB2609343A GB2609343A (en) | 2023-02-01 |
GB2609343B true GB2609343B (en) | 2023-06-07 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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GB2215522.0A Active GB2609343B (en) | 2018-07-23 | 2018-07-23 | Power Semiconductor Device |
GB1811989.1A Active GB2575809B (en) | 2018-07-23 | 2018-07-23 | Power Semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1811989.1A Active GB2575809B (en) | 2018-07-23 | 2018-07-23 | Power Semiconductor device |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN110767751B (en) |
GB (2) | GB2609343B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09107097A (en) * | 1995-10-11 | 1997-04-22 | Fuji Electric Co Ltd | Rectifier device and its drive method |
US20120161224A1 (en) * | 2010-12-28 | 2012-06-28 | Infineon Technologies Austria Ag | Semiconductor Device Including Diode |
US20160005732A1 (en) * | 2013-02-07 | 2016-01-07 | John Wood | Bipolar junction transistor structure |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE93654T1 (en) * | 1988-04-22 | 1993-09-15 | Asea Brown Boveri | SWITCH-OFF POWER SEMICONDUCTOR COMPONENT. |
JP3163820B2 (en) * | 1992-07-28 | 2001-05-08 | 富士電機株式会社 | Semiconductor device |
DE69428894T2 (en) * | 1994-08-02 | 2002-04-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Bipolar transistor with isolated control electrode |
EP0718893A3 (en) * | 1994-11-25 | 1999-07-14 | Fuji Electric Co., Ltd. | MOS controlled thyristor having two gates |
US8120074B2 (en) * | 2009-10-29 | 2012-02-21 | Infineon Technologies Austria Ag | Bipolar semiconductor device and manufacturing method |
GB2524699C (en) * | 2013-02-07 | 2018-11-14 | Wood John | A bipolar junction transistor structure |
WO2017208734A1 (en) * | 2016-06-03 | 2017-12-07 | 富士電機株式会社 | Semiconductor device |
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2018
- 2018-07-23 GB GB2215522.0A patent/GB2609343B/en active Active
- 2018-07-23 GB GB1811989.1A patent/GB2575809B/en active Active
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2019
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JPH09107097A (en) * | 1995-10-11 | 1997-04-22 | Fuji Electric Co Ltd | Rectifier device and its drive method |
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US20160005732A1 (en) * | 2013-02-07 | 2016-01-07 | John Wood | Bipolar junction transistor structure |
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GB201811989D0 (en) | 2018-09-05 |
CN110767751A (en) | 2020-02-07 |
GB2575809B (en) | 2023-01-04 |
CN110767751B (en) | 2023-04-28 |
GB2575809A (en) | 2020-01-29 |
GB2609343A (en) | 2023-02-01 |
GB202215522D0 (en) | 2022-12-07 |
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