DE3855922T2 - An-Steuertechnik für Thyristor mit isolierter Steuerelektrode - Google Patents

An-Steuertechnik für Thyristor mit isolierter Steuerelektrode

Info

Publication number
DE3855922T2
DE3855922T2 DE3855922T DE3855922T DE3855922T2 DE 3855922 T2 DE3855922 T2 DE 3855922T2 DE 3855922 T DE3855922 T DE 3855922T DE 3855922 T DE3855922 T DE 3855922T DE 3855922 T2 DE3855922 T2 DE 3855922T2
Authority
DE
Germany
Prior art keywords
thyristor
control
insulated
technology
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855922T
Other languages
English (en)
Other versions
DE3855922D1 (de
Inventor
Tsuneo C O Patent Divisi Ogura
Akio C O Patent Divis Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4130887A external-priority patent/JPS63209170A/ja
Priority claimed from JP4130787A external-priority patent/JP2513665B2/ja
Priority claimed from JP62330064A external-priority patent/JP2590168B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3855922D1 publication Critical patent/DE3855922D1/de
Publication of DE3855922T2 publication Critical patent/DE3855922T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE3855922T 1987-02-26 1988-02-24 An-Steuertechnik für Thyristor mit isolierter Steuerelektrode Expired - Fee Related DE3855922T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4130887A JPS63209170A (ja) 1987-02-26 1987-02-26 サイリスタの駆動方法
JP4130787A JP2513665B2 (ja) 1987-02-26 1987-02-26 絶縁ゲ−ト型サイリスタ
JP4131687 1987-02-26
JP62330064A JP2590168B2 (ja) 1987-02-26 1987-12-28 サイリスタの駆動方法

Publications (2)

Publication Number Publication Date
DE3855922D1 DE3855922D1 (de) 1997-07-03
DE3855922T2 true DE3855922T2 (de) 1998-01-02

Family

ID=27461032

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855922T Expired - Fee Related DE3855922T2 (de) 1987-02-26 1988-02-24 An-Steuertechnik für Thyristor mit isolierter Steuerelektrode

Country Status (3)

Country Link
US (3) US4866315A (de)
EP (1) EP0280536B1 (de)
DE (1) DE3855922T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
JP2839595B2 (ja) * 1989-11-30 1998-12-16 株式会社東芝 絶縁ゲート付きｇｔｏサイリスタ
US5030862A (en) * 1990-01-31 1991-07-09 Harris Corporation Turn-off circuit for gate turn off SCR
DE4216810C2 (de) * 1991-05-31 1999-09-16 Fuji Electric Co Ltd Steuerschaltung für einen Leitfähigkeitsänderungs-MISFET
EP0522712B1 (de) * 1991-06-10 1999-03-24 Kabushiki Kaisha Toshiba Thyristor mit isoliertem Gate
US5428228A (en) * 1991-06-10 1995-06-27 Kabushiki Kaisha Toshiba Method of operating thyristor with insulated gates
US5227653A (en) * 1991-08-07 1993-07-13 North American Philips Corp. Lateral trench-gate bipolar transistors
JPH0575110A (ja) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd 半導体装置
EP0848497B1 (de) * 1992-05-01 2002-10-23 Fuji Electric Co., Ltd. Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate
US5294816A (en) * 1992-06-10 1994-03-15 North Carolina State University At Raleigh Unit cell arrangement for emitter switched thyristor with base resistance control
US5357120A (en) * 1992-07-14 1994-10-18 Hitachi Ltd. Compound semiconductor device and electric power converting apparatus using such device
US5198687A (en) * 1992-07-23 1993-03-30 Baliga Bantval J Base resistance controlled thyristor with single-polarity turn-on and turn-off control
US5293054A (en) * 1992-11-23 1994-03-08 North Carolina State University At Raleigh Emitter switched thyristor without parasitic thyristor latch-up susceptibility
US5306930A (en) * 1992-12-14 1994-04-26 North Carolina State University At Raleigh Emitter switched thyristor with buried dielectric layer
US5241194A (en) * 1992-12-14 1993-08-31 North Carolina State University At Raleigh Base resistance controlled thyristor with integrated single-polarity gate control
US5396087A (en) * 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
JP3255547B2 (ja) * 1994-03-09 2002-02-12 株式会社東芝 絶縁ゲート付きサイリスタ
US5493134A (en) * 1994-11-14 1996-02-20 North Carolina State University Bidirectional AC switching device with MOS-gated turn-on and turn-off control
GB9525363D0 (en) * 1995-12-12 1996-02-14 Lynxvale Ltd Semiconductor device
AU130254S (en) * 1996-04-04 1997-06-04 Ericsson Telefon Ab L M DC connector with locking spring
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6107649A (en) * 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
EP1142026B1 (de) * 1998-12-04 2007-11-14 Infineon Technologies AG Leistungshalbleiterschalter
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US10707340B2 (en) * 2018-09-07 2020-07-07 Semiconductor Components Industries, Llc Low turn-on voltage silicon carbide rectifiers

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331969A (en) * 1976-11-08 1982-05-25 General Electric Company Field-controlled bipolar transistor
DE2733060C2 (de) * 1977-07-21 1982-04-08 Mitsubishi Denki K.K., Tokyo Abschaltbarer Thyristor
JPS5437589A (en) * 1977-08-29 1979-03-20 Mitsubishi Electric Corp Semoconductor switching unit
JPS5595362A (en) * 1979-01-12 1980-07-19 Meidensha Electric Mfg Co Ltd Turn-off thyristor
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
DE3118347A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
JPS5866356A (ja) * 1981-10-16 1983-04-20 Origin Electric Co Ltd 可制御型半導体装置
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
JPS60164359A (ja) * 1984-02-07 1985-08-27 Nec Corp 半導体装置
JPS6126260A (ja) * 1984-07-16 1986-02-05 Meidensha Electric Mfg Co Ltd Ｇｔｏサイリスタ
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
EP0178582A3 (de) * 1984-10-15 1989-02-08 Hitachi, Ltd. Rückwärts sperrendes Halbleiterbauelement
JPS61114574A (ja) * 1984-11-09 1986-06-02 Hitachi Ltd 半導体装置
JPS61182261A (ja) * 1985-02-08 1986-08-14 Toshiba Corp ゲ−トタ−ンオフサイリスタの駆動法
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
JPH0793383B2 (ja) * 1985-11-15 1995-10-09 株式会社日立製作所 半導体装置
US4774420A (en) * 1986-11-06 1988-09-27 Texas Instruments Incorporated SCR-MOS circuit for driving electroluminescent displays
US4912541A (en) * 1987-05-19 1990-03-27 General Electric Company Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication
JPS6481271A (en) * 1987-09-22 1989-03-27 Nec Corp Conductivity-modulation type mosfet

Also Published As

Publication number Publication date
EP0280536B1 (de) 1997-05-28
EP0280536A3 (de) 1990-10-10
DE3855922D1 (de) 1997-07-03
US4994696A (en) 1991-02-19
US4959703A (en) 1990-09-25
EP0280536A2 (de) 1988-08-31
US4866315A (en) 1989-09-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee